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    • 7. 发明申请
    • PHOTOGRAPHIC MASK AND METHOD FOR MAKING SAME
    • 摄影掩模及其制作方法
    • US20170031238A1
    • 2017-02-02
    • US15070134
    • 2016-03-15
    • Linlin WangYe ZhouChengYen LiuZhenkui Meng
    • Linlin WangYe ZhouChengYen LiuZhenkui Meng
    • G03F1/42G03F1/80
    • G03F1/42G03F1/50H04R2201/003
    • A photographic mask is provided in the present disclosure. The photographic mask includes a silicon-on-insulator (SOI) base and a stepped opening formed in the SOI base. The SOI base includes a silicon substrate, a median layer and a silicon layer, the median layer is arranged between the insulator substrate and the insulator layer. The stepped opening includes a first opening portion and a second opening portion, the first opening portion penetrates through the silicon layer and has a first opening area; the second opening portion at least penetrates through the silicon substrate and is aligned with the first opening portion. The second opening portion has a second opening area greater than the first opening area of the first opening portion. The present disclosure further provides a method for making a photographic mask.
    • 在本公开中提供了一种照相掩模。 摄影掩模包括绝缘体上硅(SOI)基底和形成在SOI基底中的阶梯式开口。 SOI基底包括硅衬底,中间层和硅层,中间层布置在绝缘体衬底和绝缘体层之间。 所述阶梯式开口包括第一开口部和第二开口部,所述第一开口部穿透所述硅层,并具有第一开口面积; 第二开口部分至少穿过硅衬底并与第一开口部分对准。 第二开口部分具有大于第一开口部分的第一开口面积的第二开口面积。 本公开还提供了一种制造照相掩模的方法。