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1. 发明申请

US20130267049A1 METHOD FOR PRODUCING A STRUCTURE COMPRISING AT LEAST ONE ACTIVE PART HAVING ZONES OF DIFFERENT THICKNESSES 有权
标题翻译：生产包含至少一个具有不同厚度区域的有源部分的结构的方法
公开(公告)号：US20130267049A1
公开(公告)日：2013-10-10
申请号：US13682847
申请日：2012-11-21
申请人： Commissariat a I'energie atomique et aux energies alternatives
发明人： Philippe ROBERT , Sophie GIROUD
IPC分类号： B81C1/00
CPC分类号： B81C1/00134 , B81B2201/0264 , B81B2203/0109 , B81B2203/0136 , B81C1/00603 , B81C1/00801 , B81C2201/014
摘要： Method for producing a structure comprising an active part comprising a first and a second suspended zone of different thicknesses from a first comprising substrate, said method comprising the following steps: a) machining the front face of the first substrate to define the lateral contours of at least one first suspended zone according to a first thickness less than that of the first substrate, b) forming a stop layer of etching of the first suspended zone under said suspended zone, to do this a prior step of removal of the semi-conductor material arranged under the first suspended zone takes place, c) forming on the front face of the first substrate a sacrificial layer, d) machining from the rear face of the first substrate up to releasing said sacrificial layer to form at least one second suspended zone to reach the stop layer of the first suspended zone, e) releasing the first and second suspended zones.
摘要翻译：一种用于生产结构的方法，所述结构包括活性部分，所述活性部分包括不同厚度的第一和第二悬浮区域，所述第一和第二悬浮区域与第一包含基底的第一悬浮区域相同，所述方法包括以下步骤：a）加工所述第一基底的前表面以限定根据第一厚度小于第一衬底的第一厚度的至少一个第一悬浮区，b）在所述悬浮区下方形成蚀刻第一悬浮区的停止层，以此去除半导体材料的先前步骤布置在第一悬挂区域下方，c）在第一基板的正面上形成牺牲层，d）从第一基板的后表面加工到释放所述牺牲层以形成至少一个第二悬挂区域到达第一悬浮区的停止层，e）释放第一和第二悬浮区。

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