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    • 8. 发明授权
    • Method and apparatus for selective deposition of materials to surfaces and substrates
    • 用于将材料选择性沉积到表面和基底的方法和装置
    • US07402517B2
    • 2008-07-22
    • US11096346
    • 2005-03-31
    • Clement R. YonkerDean W. MatsonDaniel J. GasparGeorge S. Deverman
    • Clement R. YonkerDean W. MatsonDaniel J. GasparGeorge S. Deverman
    • H01L21/445
    • C23C18/02C23C18/08H01L21/28562H01L21/76843H01L21/76879
    • Methods are disclosed for depositing materials selectively and controllably from liquid, near-critical, and/or supercritical fluids to a substrate or surface controlling the location and/or thickness of material(s) deposited to the surface or substrate. In one exemplary process, metals are deposited selectively filling feature patterns (e.g., vias) of substrates. The process can be further used to control deposition of materials on sub-surfaces of composite or structured silicon wafers, e.g., for the deposition of barrier films on silicon wafer surfaces. Materials include, but are not limited to, overburden materials, metals, non-metals, layered materials, organics, polymers, and semiconductor materials. The instant invention finds application in such commercial processes as semiconductor chip manufacturing. In particular, selective deposition is envisioned to provide alternatives to, or decrease need for, such processes as Chemical Mechanical Planarization of silicon surfaces in semiconductor chip manufacturing due to selective filling and/or coating of pattern features with metals deposited from liquid, near-critical, or supercritical fluids.
    • 公开了用于将液体,近临界和/或超临界流体选择性和可控地沉积到控制沉积到表面或基底上的材料的位置和/或厚度的基底或表面的方法。 在一个示例性工艺中,金属沉积选择性地填充衬底的特征图案(例如,通孔)。 该方法可以进一步用于控制材料在复合或结构硅晶片的子表面上的沉积,例如用于在硅晶片表面上沉积阻挡膜。 材料包括但不限于覆盖层材料,金属,非金属,层状材料,有机物,聚合物和半导体材料。 本发明可应用于诸如半导体芯片制造的商业工艺中。 特别地,选择性沉积被设想为提供替代或减少对半导体芯片制造中的硅表面的化学机械平面化的过程的选择或减少,这是由于选择性地填充和/或涂覆具有从液体附近的金属附近的金属的图案特征 ,或超临界流体。