专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5468663A Method of fabricating three-dimensional direct-write EEPROM arrays 失效
标题翻译：制造三维直写EEPROM阵列的方法
公开(公告)号：US5468663A
公开(公告)日：1995-11-21
申请号：US405128
申请日：1995-03-16
申请人： Claude L. Bertin , Donelli J. DiMaria , Makoto Miyakawa , Yoshinori Sakaue
发明人： Claude L. Bertin , Donelli J. DiMaria , Makoto Miyakawa , Yoshinori Sakaue
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11556 , H01L27/115 , H01L29/7882
摘要： A three-dimensional memory cell, suitable for electrically erasable programmable read only memories (EEPROMS), which has direct-write cell capability is disclosed. The memory cell is utilized in the fabrication of non-volatile, direct-write EEPROM arrays with high integration density. A typical EEPROM array includes a plurality of elongated shallow trenches formed in a semiconductor substrate. Multiple direct-write EEPROM cells are disposed within each elongated trench such that each EEPROM cell shares a recall gate and a program gate with another cell in the same trench. Preferably, a silicon rich dielectric (such as silicon rich oxide) disposed between each floating gate and its associated programming and recall gates. Both common source diffusion and isolated source diffusion embodiments are disclosed. Further, various fabrication methods for the direct-write EEPROM arrays presented are described.
摘要翻译：公开了一种适用于具有直写单元能力的电可擦除可编程只读存储器（EEPROMS）的三维存储单元。存储单元用于制造具有高集成度密度的非易失性直写EEPROM阵列。典型的EEPROM阵列包括形成在半导体衬底中的多个细长的浅沟槽。多个直写EEPROM单元被布置在每个细长沟槽内，使得每个EEPROM单元与相同沟槽中的另一个单元共享回调门和编程门。优选地，设置在每个浮动栅极与其相关联的编程和调用栅极之间的富硅电介质（例如富氧氧化物）。公开了源极扩散和隔离源扩散实施例。此外，描述了所呈现的用于直写EEPROM阵列的各种制造方法。

2. 发明授权

US5617351A Three-dimensional direct-write EEPROM arrays and fabrication methods 失效
标题翻译：三维直写EEPROM阵列及制作方法
公开(公告)号：US5617351A
公开(公告)日：1997-04-01
申请号：US464018
申请日：1995-06-05
申请人： Claude L. Bertin , Donelli J. DiMaria , Makoto Miyakawa , Yoshinori Sakaue
发明人： Claude L. Bertin , Donelli J. DiMaria , Makoto Miyakawa , Yoshinori Sakaue
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792 , G11C16/04
CPC分类号： H01L27/11556 , H01L27/115 , H01L29/7882
摘要： A three-dimensional memory cell, suitable for electrically erasable programmable read only memories (EEPROMS), which has direct-write cell capability is disclosed. The memory cell is utilized in the fabrication of non-volatile, direct-write EEPROM arrays with high integration density. A typical EEPROM array includes a plurality of elongated shallow trenches formed in a semiconductor substrate. Multiple direct-write EEPROM cells are disposed within each elongated trench such that each EEPROM cell shares a recall gate and a program gate with another cell in the same trench. Preferably, a silicon rich dielectric (such as silicon rich oxide) disposed between each floating gate and its associated programming and recall gates. Both common source diffusion and isolated source diffusion embodiments are disclosed. Further, various fabrication methods for the direct-write EEPROM arrays presented are described.
摘要翻译：公开了一种适用于具有直写单元能力的电可擦除可编程只读存储器（EEPROMS）的三维存储单元。存储单元用于制造具有高集成度密度的非易失性直写EEPROM阵列。典型的EEPROM阵列包括形成在半导体衬底中的多个细长的浅沟槽。多个直写EEPROM单元被布置在每个细长沟槽内，使得每个EEPROM单元与相同沟槽中的另一个单元共享回调门和编程门。优选地，设置在每个浮动栅极与其相关联的编程和调用栅极之间的富硅电介质（例如富氧氧化物）。公开了源极扩散和隔离源扩散实施例。此外，描述了所呈现的用于直写EEPROM阵列的各种制造方法。

3. 发明授权

US5467305A Three-dimensional direct-write EEPROM arrays and fabrication methods 失效
标题翻译：三维直写EEPROM阵列及制作方法
公开(公告)号：US5467305A
公开(公告)日：1995-11-14
申请号：US850734
申请日：1992-03-12
申请人： Claude L. Bertin , Donelli J. DiMaria , Makoto Miyakawa , Yoshinori Sakaue
发明人： Claude L. Bertin , Donelli J. DiMaria , Makoto Miyakawa , Yoshinori Sakaue
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792 , G11C14/00
CPC分类号： H01L27/11556 , H01L27/115 , H01L29/7882
摘要： A three-dimensional memory cell, suitable for electrically erasable programmable read only memories (EEPROMS), which has direct-write cell capability is disclosed. The memory cell is utilized in the fabrication of non-volatile, direct-write EEPROM arrays with high integration density. A typical EEPROM array includes a plurality of elongated shallow trenches formed in a semiconductor substrate. Multiple direct-write EEPROM cells are disposed within each elongated trench such that each EEPROM cell shares a recall gate and a program gate with another cell in the same trench. Preferably, a silicon rich dielectric (such as silicon rich oxide) disposed between each floating gate and its associated programming and recall gates. Both common source diffusion and isolated source diffusion embodiments are disclosed. Further, various fabrication methods for the direct-write EEPROM arrays presented are described.
摘要翻译：公开了一种适用于具有直写单元能力的电可擦除可编程只读存储器（EEPROMS）的三维存储单元。存储单元用于制造具有高集成度密度的非易失性直写EEPROM阵列。典型的EEPROM阵列包括形成在半导体衬底中的多个细长的浅沟槽。多个直写EEPROM单元被布置在每个细长沟槽内，使得每个EEPROM单元与相同沟槽中的另一个单元共享回调门和编程门。优选地，设置在每个浮动栅极与其相关联的编程和调用栅极之间的富硅电介质（例如富氧氧化物）。公开了源极扩散和隔离源扩散实施例。此外，描述了所呈现的用于直写EEPROM阵列的各种制造方法。

4. 发明申请

US20070118513A1 SYSTEM FOR MANAGING COMMUNITY PROVIDED IN INFORMATION PROCESSING SYSTEM, AND METHOD THEREOF 有权
标题翻译：用于管理信息处理系统中提供的社区的系统及其方法
公开(公告)号：US20070118513A1
公开(公告)日：2007-05-24
申请号：US11559722
申请日：2006-11-14
申请人： Hideaki Iwasaki , Koichi Kamijoh , Kazuhisa Misono , Makoto Miyakawa , Masaharu Sakamoto
发明人： Hideaki Iwasaki , Koichi Kamijoh , Kazuhisa Misono , Makoto Miyakawa , Masaharu Sakamoto
IPC分类号： G06F17/30
CPC分类号： G06Q10/107
摘要： Provided is a system which manages a user community provided in an information processing system, in which user community information provided by a user is made available to another user for reference. The system includes a storage section which stores an audit policy defining contents of information to be permitted to be registered in each of a plurality of communities, by associating the audit policy with each of the communities; a detection section which detects a community to which information is provided in response to provision of the information by a user; and a registration control section which inhibits registration of information, provided by a user, in a detected user community on condition that the information violates an audit policy corresponding to the user community.
摘要翻译：提供了一种管理信息处理系统中提供的用户社区的系统，其中由用户提供的用户社区信息可供其他用户参考。该系统包括存储部分，其通过将审核策略与每个社区相关联来存储定义允许登记在多个社区中的每个社区的信息内容的审计政策; 检测部，其响应于用户提供的信息来检测提供了信息的社区; 以及注册控制部分，其在信息违反与用户社区相对应的审核策略的情况下，禁止用户提供的信息的注册在检测到的用户社区中。

5. 发明授权

US08141124B2 Managing community provided in information processing system 有权
标题翻译：管理信息处理系统中提供的社区
公开(公告)号：US08141124B2
公开(公告)日：2012-03-20
申请号：US11559722
申请日：2006-11-14
申请人： Hideaki Iwasaki , Koichi Kamijoh , Kazuhisa Misono , Makoto Miyakawa , Masaharu Sakamoto
发明人： Hideaki Iwasaki , Koichi Kamijoh , Kazuhisa Misono , Makoto Miyakawa , Masaharu Sakamoto
IPC分类号： H04L29/06
CPC分类号： G06Q10/107
摘要： Provided is a system which manages a user community provided in an information processing system, in which user community information provided by a user is made available to another user for reference. The system includes a storage section which stores an audit policy defining contents of information to be permitted to be registered in each of a plurality of communities, by associating the audit policy with each of the communities; a detection section which detects a community to which information is provided in response to provision of the information by a user; and a registration control section which inhibits registration of information, provided by a user, in a detected user community on condition that the information violates an audit policy corresponding to the user community.
摘要翻译：提供了一种管理信息处理系统中提供的用户社区的系统，其中由用户提供的用户社区信息可供其他用户参考。该系统包括存储部分，其通过将审核策略与每个社区相关联来存储定义允许登记在多个社区中的每个社区的信息内容的审计政策; 检测部，其响应于用户提供的信息来检测提供了信息的社区; 以及注册控制部分，其在信息违反与用户社区相对应的审核策略的情况下，禁止用户提供的信息的注册在检测到的用户社区中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式