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1. 发明申请

US20080061359A1 Dual charge storage node with undercut gate oxide for deep sub-micron memory cell 审中-公开
标题翻译：具有底切栅极氧化物的双电荷存储节点用于深亚微米存储单元
公开(公告)号：US20080061359A1
公开(公告)日：2008-03-13
申请号：US11702847
申请日：2007-02-05
申请人： Chungho Lee , Hiroyuki Kinoshita , Zoran Krivokapic , Wei Zheng , Mark Chang , Rinji Sugino , Chi Chang
发明人： Chungho Lee , Hiroyuki Kinoshita , Zoran Krivokapic , Wei Zheng , Mark Chang , Rinji Sugino , Chi Chang
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L27/11568 , H01L27/11521 , H01L29/40114 , H01L29/40117 , H01L29/42332 , H01L29/42348 , H01L29/7885 , H01L29/7887 , H01L29/792 , H01L29/7923
摘要： An embodiment of the present invention is directed to a memory cell. The memory cell includes a stack formed over a substrate. The stack includes a gate oxide layer and an overlying polycrystalline silicon layer. The stack further includes first and second undercut regions formed under the polycrystalline silicon layer and adjacent to the gate oxide layer. The memory cell further includes a first charge storage element formed in the first undercut region and a second charge storage element formed in the second undercut region.
摘要翻译：本发明的实施例涉及存储单元。存储单元包括形成在衬底上的堆叠。堆叠包括栅极氧化物层和上覆的多晶硅层。堆叠还包括形成在多晶硅层下方并与栅极氧化物层相邻的第一和第二底切区域。存储单元还包括形成在第一底切区域中的第一电荷存储元件和形成在第二底切区域中的第二电荷存储元件。

2. 发明授权

US08455268B2 Gate replacement with top oxide regrowth for the top oxide improvement 有权
标题翻译：门顶置换，顶部氧化物再生长，用于顶部氧化物改良
公开(公告)号：US08455268B2
公开(公告)日：2013-06-04
申请号：US11848515
申请日：2007-08-31
申请人： Chungho Lee , Hiroyuki Kinoshita , Kuo-Tung Chang , Rinji Sugino , Chi Chang , Huaqiang Wu
发明人： Chungho Lee , Hiroyuki Kinoshita , Kuo-Tung Chang , Rinji Sugino , Chi Chang , Huaqiang Wu
IPC分类号： H01L21/00 , H01L21/311
CPC分类号： H01L29/7923 , H01L21/28273 , H01L21/28282 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/42332 , H01L29/42348 , H01L29/7887
摘要： Methods of replacing/reforming a top oxide around a charge storage element of a memory cell and methods of improving quality of a top oxide around a charge storage element of a memory cell are provided. The method can involve removing a first poly over a first top oxide from the memory cell; removing the first top oxide from the memory cell; and forming a second top oxide around the charge storage element. The second top oxide can be formed by oxidizing a portion of the charge storage element or by forming a sacrificial layer over the charge storage element and oxidizing the sacrificial layer to a second top oxide.
摘要翻译：提供了替换/重整存储单元的电荷存储元件周围的顶部氧化物的方法和提高存储单元的电荷存储元件周围的顶部氧化物的质量的方法。该方法可以包括从存储器单元去除第一顶部氧化物上的第一多晶硅; 从存储器单元中去除第一顶部氧化物; 以及在所述电荷存储元件周围形成第二顶部氧化物。可以通过氧化电荷存储元件的一部分或通过在电荷存储元件上形成牺牲层并将牺牲层氧化成第二顶部氧化物来形成第二顶部氧化物。

3. 发明申请

US20090061631A1 GATE REPLACEMENT WITH TOP OXIDE REGROWTH FOR THE TOP OXIDE IMPROVEMENT 有权
标题翻译：顶部氧化物改进的顶部氧化物替换
公开(公告)号：US20090061631A1
公开(公告)日：2009-03-05
申请号：US11848515
申请日：2007-08-31
申请人： Chungho Lee , Hiroyuki Kinoshita , Kuo-Tung Chang , Rinji Sugino , Chi Chang , Huaqiang Wu
发明人： Chungho Lee , Hiroyuki Kinoshita , Kuo-Tung Chang , Rinji Sugino , Chi Chang , Huaqiang Wu
IPC分类号： H01L21/311
CPC分类号： H01L29/7923 , H01L21/28273 , H01L21/28282 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/42332 , H01L29/42348 , H01L29/7887
摘要： Methods of replacing/reforming a top oxide around a charge storage element of a memory cell and methods of improving quality of a top oxide around a charge storage element of a memory cell are provided. The method can involve removing a first poly over a first top oxide from the memory cell; removing the first top oxide from the memory cell; and forming a second top oxide around the charge storage element. The second top oxide can be formed by oxidizing a portion of the charge storage element or by forming a sacrificial layer over the charge storage element and oxidizing the sacrificial layer to a second top oxide.
摘要翻译：提供了替换/重整存储单元的电荷存储元件周围的顶部氧化物的方法和提高存储单元的电荷存储元件周围的顶部氧化物的质量的方法。该方法可以包括从存储器单元去除第一顶部氧化物上的第一多晶硅; 从存储器单元中去除第一顶部氧化物; 以及在所述电荷存储元件周围形成第二顶部氧化物。可以通过氧化电荷存储元件的一部分或通过在电荷存储元件上形成牺牲层并将牺牲层氧化成第二顶部氧化物来形成第二顶部氧化物。

4. 发明授权

US09159568B2 Method for fabricating memory cells having split charge storage nodes 有权
标题翻译：用于制造具有分离电荷存储节点的存储单元的方法
公开(公告)号：US09159568B2
公开(公告)日：2015-10-13
申请号：US11639666
申请日：2006-12-15
申请人： Chungho Lee , Wei Zheng , Chi Chang , Unsoon Kim , Hiroyuki Kinoshita
发明人： Chungho Lee , Wei Zheng , Chi Chang , Unsoon Kim , Hiroyuki Kinoshita
IPC分类号： H01L21/28 , H01L29/66 , H01L29/10 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L21/28282 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/1037 , H01L29/1083 , H01L29/42332 , H01L29/42348 , H01L29/66537 , H01L29/7887 , H01L29/7923
摘要： Memory cells having split charge storage nodes and methods for fabricating memory cells having split charge storage nodes are disclosed. A disclosed method includes forming a first trench and an adjacent second trench in a semiconductor substrate, the first trench and the second trench each defining a first sidewall and a second sidewall respectively and forming a first source/drain region in the substrate and a second source/drain region in the substrate, where the first source/drain region and the second source/drain region are formed substantially under the first trench and the second trench in the semiconductor substrate respectively. Moreover, a method includes forming a bit line punch through barrier in the substrate between the first source/drain region and the second source drain region and forming a first storage element on the first sidewall of the first trench and a second storage element on the second sidewall of the second element. A word line is formed in contact with the first storage element and the second storage element.
摘要翻译：公开了具有分割电荷存储节点的存储单元和用于制造具有分离电荷存储节点的存储单元的方法。所公开的方法包括在半导体衬底中形成第一沟槽和相邻的第二沟槽，第一沟槽和第二沟槽分别限定第一侧壁和第二侧壁，并在衬底中形成第一源极/漏极区域，第二源极 /漏极区域，其中第一源极/漏极区域和第二源极/漏极区域分别基本上形成在半导体衬底中的第一沟槽和第二沟槽下方。此外，一种方法包括在第一源极/漏极区域和第二源极漏极区域之间的衬底中形成位线穿通阻挡层，并在第一沟槽的第一侧壁上形成第一存储元件，在第二沟槽的第二沟槽上形成第二存储元件第二元件的侧壁。形成与第一存储元件和第二存储元件接触的字线。

5. 发明申请

US20080142875A1 Memory cells having split charge storage nodes and methods for fabricating memory cells having split charge storage nodes 有权
标题翻译：具有分离电荷存储节点的存储单元和用于制造具有分离电荷存储节点的存储单元的方法
公开(公告)号：US20080142875A1
公开(公告)日：2008-06-19
申请号：US11639666
申请日：2006-12-15
申请人： Chungho Lee , Wei Zheng , Chi Chang , Unsoon Kim , Hiroyuki Kinoshita
发明人： Chungho Lee , Wei Zheng , Chi Chang , Unsoon Kim , Hiroyuki Kinoshita
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L21/28282 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/1037 , H01L29/1083 , H01L29/42332 , H01L29/42348 , H01L29/66537 , H01L29/7887 , H01L29/7923
摘要： Memory cells having split charge storage nodes and methods for fabricating memory cells having split charge storage nodes are disclosed. A disclosed method includes forming a first trench and an adjacent second trench in a semiconductor substrate, the first trench and the second trench each defining a first sidewall and a second sidewall respectively and forming a first source/drain region in the substrate and a second source/drain region in the substrate, where the first source/drain region and the second source/drain region are formed substantially under the first trench and the second trench in the semiconductor substrate respectively. Moreover, a method includes forming a bit line punch through barrier in the substrate between the first source/drain region and the second source drain region and forming a first storage element on the first sidewall of the first trench and a second storage element on the second sidewall of the second element. A word line is formed in contact with the first storage element and the second storage element.
摘要翻译：公开了具有分割电荷存储节点的存储单元和用于制造具有分离电荷存储节点的存储单元的方法。所公开的方法包括在半导体衬底中形成第一沟槽和相邻的第二沟槽，第一沟槽和第二沟槽分别限定第一侧壁和第二侧壁，并在衬底中形成第一源极/漏极区域，第二源极 /漏极区域，其中第一源极/漏极区域和第二源极/漏极区域分别基本上形成在半导体衬底中的第一沟槽和第二沟槽下方。此外，一种方法包括在第一源极/漏极区域和第二源极漏极区域之间的衬底中形成位线穿通阻挡层，并在第一沟槽的第一侧壁上形成第一存储元件，在第二沟槽的第二沟槽上形成第二存储元件第二元件的侧壁。形成与第一存储元件和第二存储元件接触的字线。

6. 发明授权

US08076712B2 Semiconductor memory comprising dual charge storage nodes and methods for its fabrication 有权
标题翻译：半导体存储器包括双电荷存储节点及其制造方法
公开(公告)号：US08076712B2
公开(公告)日：2011-12-13
申请号：US12840165
申请日：2010-07-20
申请人： Chungho Lee , Ashot Melik-Martirosian , Wei Zheng , Timothy Thurgate , Chi Chang , Hiroyuki Kinoshita , Kuo-Tung Chang , Unsoon Kim
发明人： Chungho Lee , Ashot Melik-Martirosian , Wei Zheng , Timothy Thurgate , Chi Chang , Hiroyuki Kinoshita , Kuo-Tung Chang , Unsoon Kim
IPC分类号： H01L29/788
CPC分类号： H01L29/42332 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/42348 , H01L29/7887 , H01L29/7923
摘要： A dual charge storage node memory device and methods for its fabrication are provided. In one embodiment a dielectric plug is formed comprising a first portion recessed into a semiconductor substrate and a second portion extending above the substrate. A layer of semiconductor material is formed overlying the second portion. A first layered structure is formed overlying a first side of the second portion of the dielectric plug, and a second layered structure is formed overlying a second side, each of the layered structures overlying the layer of semiconductor material and comprising a charge storage layer between first and second dielectric layers. Ions are implanted into the substrate to form a first bit line and second bit line, and a layer of conductive material is deposited and patterned to form a control gate overlying the dielectric plug and the first and second layered structures.
摘要翻译：提供了双电荷存储节点存储器件及其制造方法。在一个实施例中，形成包括凹入半导体衬底的第一部分和在衬底上延伸的第二部分的电介质插塞。在第二部分上形成一层半导体材料。第一层状结构形成在电介质塞的第二部分的第一侧上，并且第二层结构形成在第二侧上，每个层叠结构覆盖在半导体材料层上，并且包括第一和第二层之间的电荷存储层和第二电介质层。将离子注入到衬底中以形成第一位线和第二位线，并且沉积和图案化导电材料层以形成覆盖在电介质插塞和第一和第二分层结构上的控制栅极。

7. 发明授权

US07767517B2 Semiconductor memory comprising dual charge storage nodes and methods for its fabrication 有权
标题翻译：半导体存储器包括双电荷存储节点及其制造方法
公开(公告)号：US07767517B2
公开(公告)日：2010-08-03
申请号：US11613513
申请日：2006-12-20
申请人： Chungho Lee , Ashot Melik-Martirosian , Wei Zheng , Timothy Thurgate , Chi Chang , Hiroyuki Kinoshita , Kuo-Tung Chang , Unsoon Kim
发明人： Chungho Lee , Ashot Melik-Martirosian , Wei Zheng , Timothy Thurgate , Chi Chang , Hiroyuki Kinoshita , Kuo-Tung Chang , Unsoon Kim
IPC分类号： H01L21/8242
CPC分类号： H01L29/42332 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/42348 , H01L29/7887 , H01L29/7923
摘要： A dual charge storage node memory device and methods for its fabrication are provided. In one embodiment a dielectric plug is formed comprising a first portion recessed into a semiconductor substrate and a second portion extending above the substrate. A layer of semiconductor material is formed overlying the second portion. A first layered structure is formed overlying a first side of the second portion of the dielectric plug, and a second layered structure is formed overlying a second side, each of the layered structures overlying the layer of semiconductor material and comprising a charge storage layer between first and second dielectric layers. Ions are implanted into the substrate to form a first bit line and second bit line, and a layer of conductive material is deposited and patterned to form a control gate overlying the dielectric plug and the first and second layered structures.
摘要翻译：提供了双电荷存储节点存储器件及其制造方法。在一个实施例中，形成包括凹入半导体衬底的第一部分和在衬底上延伸的第二部分的电介质插塞。在第二部分上形成一层半导体材料。第一层状结构形成在电介质塞的第二部分的第一侧上，并且形成在第二侧上的第二层状结构，每个层叠结构覆盖在半导体材料层上，并且包括第一和第二层之间的电荷存储层和第二电介质层。将离子注入到衬底中以形成第一位线和第二位线，并且沉积和图案化导电材料层以形成覆盖在电介质插塞和第一和第二分层结构上的控制栅极。

8. 发明申请

US20080149999A1 SEMICONDUCTOR MEMORY COMPRISING DUAL CHARGE STORAGE NODES AND METHODS FOR ITS FABRICATION 有权
标题翻译：包含双电池存储器的半导体存储器及其制造方法
公开(公告)号：US20080149999A1
公开(公告)日：2008-06-26
申请号：US11613513
申请日：2006-12-20
申请人： Chungho Lee , Ashot Melik-Martirosian , Wei Zheng , Timothy Thurgate , Chi Chang , Hiroyuki Kinoshita , Kuo-Tung Chang , Unsoon Kim
发明人： Chungho Lee , Ashot Melik-Martirosian , Wei Zheng , Timothy Thurgate , Chi Chang , Hiroyuki Kinoshita , Kuo-Tung Chang , Unsoon Kim
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/42332 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/42348 , H01L29/7887 , H01L29/7923
摘要： A dual charge storage node memory device and methods for its fabrication are provided. In one embodiment a dielectric plug is formed comprising a first portion recessed into a semiconductor substrate and a second portion extending above the substrate. A layer of semiconductor material is formed overlying the second portion. A first layered structure is formed overlying a first side of the second portion of the dielectric plug, and a second layered structure is formed overlying a second side, each of the layered structures overlying the layer of semiconductor material and comprising a charge storage layer between first and second dielectric layers. Ions are implanted into the substrate to form a first bit line and second bit line, and a layer of conductive material is deposited and patterned to form a control gate overlying the dielectric plug and the first and second layered structures.
摘要翻译：提供了双电荷存储节点存储器件及其制造方法。在一个实施例中，形成包括凹入半导体衬底的第一部分和在衬底上延伸的第二部分的电介质插塞。在第二部分上形成一层半导体材料。第一层状结构形成在电介质塞的第二部分的第一侧上，并且形成在第二侧上的第二层状结构，每个层叠结构覆盖在半导体材料层上，并且包括第一和第二层之间的电荷存储层和第二电介质层。将离子注入到衬底中以形成第一位线和第二位线，并且沉积和图案化导电材料层以形成覆盖在电介质插塞和第一和第二分层结构上的控制栅极。

9. 发明授权

US07666739B2 Methods for fabricating a split charge storage node semiconductor memory 有权
标题翻译：分离电荷存储节点半导体存储器的制造方法
公开(公告)号：US07666739B2
公开(公告)日：2010-02-23
申请号：US11614048
申请日：2006-12-20
申请人： Chungho Lee , Ashot Melik-Martirosian , Hiroyuki Kinoshita , Kuo-Tung Chang , Sugimo Rinji , Wei Zheng
发明人： Chungho Lee , Ashot Melik-Martirosian , Hiroyuki Kinoshita , Kuo-Tung Chang , Sugimo Rinji , Wei Zheng
IPC分类号： H01L21/336
CPC分类号： H01L21/28282 , H01L29/792
摘要： Methods are provided for fabricating a split charge storage node semiconductor memory device. In accordance with one embodiment the method comprises the steps of forming a gate insulator layer having a first physical thickness and a first effective oxide thickness on a semiconductor substrate and forming a control gate electrode having a first edge and a second edge overlying the gate insulator layer. The gate insulator layer is etched to form first and second undercut regions at the edges of the control gate electrode, the first and second undercut region each exposing a portion of the semiconductor substrate and an underside portion of the control gate electrode. First and second charge storage nodes are formed in the undercut regions, each of the charge storage nodes comprising an oxide-storage material-oxide structure having a physical thickness substantially equal to the first physical thickness and an effective oxide thickness less than the first effective oxide thickness.
摘要翻译：提供了用于制造分离电荷存储节点半导体存储器件的方法。根据一个实施例，该方法包括以下步骤：在半导体衬底上形成具有第一物理厚度和第一有效氧化物厚度的栅极绝缘体层，并形成具有覆盖栅极绝缘体层的第一边缘和第二边缘的控制栅极电极。栅极绝缘体层被蚀刻以在控制栅电极的边缘处形成第一和第二底切区域，第一和第二底切区域各自暴露半导体衬底的一部分和控制栅电极的下侧部分。第一和第二电荷存储节点形成在底切区域中，每个电荷存储节点包括具有基本上等于第一物理厚度的物理厚度和小于第一有效氧化物的有效氧化物厚度的氧化物存储材料 - 氧化物结构厚度。

10. 发明申请

US20080153222A1 METHODS FOR FABRICATING A SPLIT CHARGE STORAGE NODE SEMICONDUCTOR MEMORY 有权
标题翻译：用于制造分离充电储存节点半导体存储器的方法
公开(公告)号：US20080153222A1
公开(公告)日：2008-06-26
申请号：US11614048
申请日：2006-12-20
申请人： Chungho Lee , Ashot Melik-Martirosian , Hiroyuki Kinoshita , Kuo-Tung Chang , Sugimo Rinji , Wei Zheng
发明人： Chungho Lee , Ashot Melik-Martirosian , Hiroyuki Kinoshita , Kuo-Tung Chang , Sugimo Rinji , Wei Zheng
IPC分类号： H01L21/336
CPC分类号： H01L21/28282 , H01L29/792
摘要： Methods are provided for fabricating a split charge storage node semiconductor memory device. In accordance with one embodiment the method comprises the steps of forming a gate insulator layer having a first physical thickness and a first effective oxide thickness on a semiconductor substrate and forming a control gate electrode having a first edge and a second edge overlying the gate insulator layer. The gate insulator layer is etched to form first and second undercut regions at the edges of the control gate electrode, the first and second undercut region each exposing a portion of the semiconductor substrate and an underside portion of the control gate electrode. First and second charge storage nodes are formed in the undercut regions, each of the charge storage nodes comprising an oxide-storage material-oxide structure having a physical thickness substantially equal to the first physical thickness and an effective oxide thickness less than the first effective oxide thickness.
摘要翻译：提供了用于制造分离电荷存储节点半导体存储器件的方法。根据一个实施例，该方法包括以下步骤：在半导体衬底上形成具有第一物理厚度和第一有效氧化物厚度的栅极绝缘体层，并形成具有覆盖栅极绝缘体层的第一边缘和第二边缘的控制栅极电极。栅极绝缘体层被蚀刻以在控制栅电极的边缘处形成第一和第二底切区域，第一和第二底切区域各自暴露半导体衬底的一部分和控制栅电极的下侧部分。第一和第二电荷存储节点形成在底切区域中，每个电荷存储节点包括具有基本上等于第一物理厚度的物理厚度和小于第一有效氧化物的有效氧化物厚度的氧化物存储材料 - 氧化物结构厚度。

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