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1. 发明授权

US06590239B2 Color filter image array optoelectronic microelectronic fabrication with a planarizing layer formed upon a concave surfaced color filter region 有权
标题翻译：滤色器图像阵列光电子微电子制造，其具有形成在凹面的滤色器区域上的平坦化层
公开(公告)号：US06590239B2
公开(公告)日：2003-07-08
申请号：US09918043
申请日：2001-07-30
申请人： Chung-Sheng Hsiung , Kuo-Liang Lu , Yu-Kung Hsiao , Chih-Kung Chang , Fu-Tien Wong , Sung-Yung Yang , Chin-Chen Kuo
发明人： Chung-Sheng Hsiung , Kuo-Liang Lu , Yu-Kung Hsiao , Chih-Kung Chang , Fu-Tien Wong , Sung-Yung Yang , Chin-Chen Kuo
IPC分类号： H01L27148
CPC分类号： H01L31/02162 , H01L27/14627 , H01L27/14685 , H01L27/156
摘要： Within a method for forming a color filter image array optoelectronic microelectronic fabrication, and the color filter image array optoelectronic microelectronic fabrication formed employing the method, there is provided a substrate having formed therein a series of photo active regions. There is also formed over the substrate at least one color filter layer having formed therein a color filter region having a concave upper surface. There is also formed upon the at least one color filter layer and planarizing the at least one color filter region having the concave upper surface, a planarizing layer. The planarizing layer provides for enhanced resolution of the color filter image array optoelectronic microelectronic fabrication.
摘要翻译：在用于形成滤光器图像阵列光电微电子制造的方法和使用该方法形成的滤色器图像阵列光电微电子制造中，提供了在其中形成有一系列光活性区域的基板。还在衬底上形成至少一个滤色器层，其中形成有具有凹上表面的滤色器区域。还形成在至少一个滤色器层上，并平坦化具有凹面上表面的至少一个滤色器区域，平坦化层。平坦化层提供了彩色滤光片图像阵列光电子微电子制造的增强分辨率。

2. 发明授权

US06660641B1 Method for forming crack resistant planarizing layer within microelectronic fabrication 有权
标题翻译：在微电子制造中形成抗裂平面化层的方法
公开(公告)号：US06660641B1
公开(公告)日：2003-12-09
申请号：US10190273
申请日：2002-07-05
申请人： Chin Chen Kuo , Sheng Liang Pan , Yu-Kung Hsiao , Chih-Kung Chang , Fu-Tien Wong , Chung Sheng Hsiung
发明人： Chin Chen Kuo , Sheng Liang Pan , Yu-Kung Hsiao , Chih-Kung Chang , Fu-Tien Wong , Chung Sheng Hsiung
IPC分类号： H01L21311
CPC分类号： H01L21/31053 , G03F7/094 , H01L27/14685
摘要： Within a method for forming a planarizing layer within a microelectronic fabrication, there is employed formed upon a partially photoexposed planarizing layer formed of a partially photoexposed negative photoresist material a sacrificial layer. Within the method, when sequentially: (1) stripping from the partially photoexposed planarizing layer the sacrificial layer; and (2) developing the partially photoexposed planarizing layer to form a developed planarizing layer, the developed planarizing layer is formed with enhanced planarity and diminished thickness.
摘要翻译：在用于在微电子制造中形成平坦化层的方法中，使用由部分光曝光的负光致抗蚀剂材料形成的部分光致曝光的平坦化层形成牺牲层。在该方法中，当顺序地：（1）从部分光刻的平坦化层剥离牺牲层; 和（2）显影部分光刻的平坦化层以形成显影的平坦化层，显影的平坦化层形成具有增强的平面性和减小的厚度。

3. 发明授权

US06849533B2 Method for fabricating microelectronic product with attenuated bond pad corrosion 有权
标题翻译：用于制造具有减弱的焊盘腐蚀的微电子产品的方法
公开(公告)号：US06849533B2
公开(公告)日：2005-02-01
申请号：US10354697
申请日：2003-01-29
申请人： Chih-Kung Chang , Yu-Kung Hsiao , Sheng-Liang Pan , Fu-Tien Wong , Chin-Chen Kuo , Chung-Sheng Hsiung , Hung-Jen Hsu , Yi-Ming Dai , Po-Wen Lin , Te-Fu Tseng
发明人： Chih-Kung Chang , Yu-Kung Hsiao , Sheng-Liang Pan , Fu-Tien Wong , Chin-Chen Kuo , Chung-Sheng Hsiung , Hung-Jen Hsu , Yi-Ming Dai , Po-Wen Lin , Te-Fu Tseng
IPC分类号： H01L21/44 , H01L21/60
CPC分类号： H01L24/11 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L2224/13099 , H01L2924/01013 , H01L2924/01015 , H01L2924/01033 , H01L2924/12043 , H01L2924/14 , H01L2924/15787 , H01L2924/19042 , H01L2924/00
摘要： A method for fabricating a microelectronic product provides for forming a planarizing layer upon a bond pad and a topographic feature, both formed laterally separated over a substrate. The planarizing layer is formed with a diminished thickness upon the bond pad such that it may be readily etched to expose the bond pad while employing as a mask an additional layer formed over the topographic feature but not over the bond pad. The method is particularly useful for forming color filter sensor image array optoelectronic products with attenuated bond pad corrosion.
摘要翻译：用于制造微电子产品的方法提供了在接合焊盘和地形特征上形成平坦化层，两者均形成在衬底上横向分离。平坦化层在接合焊盘上形成为具有减小的厚度，使得其可以容易地蚀刻以暴露接合焊盘，同时使用形成在地形特征上但不在接合焊盘上的附加层作为掩模。该方法对于形成具有减弱的键合垫腐蚀的滤色器传感器图像阵列光电产品特别有用。

4. 发明授权

US07126099B2 Image sensor with improved uniformity of effective incident light 有权
标题翻译：具有改善有效入射光均匀性的图像传感器
公开(公告)号：US07126099B2
公开(公告)日：2006-10-24
申请号：US10649436
申请日：2003-08-26
申请人： Hung-Jen Hsu , Chiu-Kung Chang , Chung-Sheng Hsiung , Fu-Tien Wong
发明人： Hung-Jen Hsu , Chiu-Kung Chang , Chung-Sheng Hsiung , Fu-Tien Wong
IPC分类号： H01L27/00 , H01L31/0232 , H04N3/14 , G02B27/10
CPC分类号： H01L27/14643 , H01L27/14621 , H01L27/14627
摘要： An image sensor improving the uniformity of effective incident light. In one example, the size of microlenses disposed in different regions of the image sensor is changed to balance the brightness in different regions, in which the size of each microlens is a function of the distance between the microlens to the chip center In another example, the distance between the center of the microlens and the center of the corresponding sensing area is changed to balance the brightness in different regions and the corresponding color filters are shifted such that the microlens is overlying a corresponding color filter unit without overlying adjacent regions thereof, in which the distance between the center of the microlens and the center of the corresponding sensing area is a function of the distance between the corresponding sensing area to the chip center.
摘要翻译：一种改善有效入射光均匀性的图像传感器。在一个示例中，设置在图像传感器的不同区域中的微透镜的尺寸被改变以平衡不同区域中的亮度，其中每个微透镜的尺寸是微透镜与芯片中心之间的距离的函数。在另一示例中，改变微透镜的中心与相应感测区域的中心之间的距离，以平衡不同区域中的亮度，并且相应的滤色器被移位，使得微透镜覆盖相应的滤色器单元而不覆盖其相邻区域，其中微透镜的中心与相应感测区域的中心之间的距离是与芯片中心的相应感测区域之间的距离的函数。

5. 发明申请

US20050045803A1 Image sensor with improved uniformity of effective incident light 有权
标题翻译：具有改善有效入射光均匀性的图像传感器
公开(公告)号：US20050045803A1
公开(公告)日：2005-03-03
申请号：US10649436
申请日：2003-08-26
申请人： Hung-Jen Hsu , Chiu-Kung Chang , Chung-Sheng Hsiung , Fu-Tien Wong
发明人： Hung-Jen Hsu , Chiu-Kung Chang , Chung-Sheng Hsiung , Fu-Tien Wong
IPC分类号： G02B3/00 , H01L27/00 , H01L27/14 , H01L27/146 , H04N5/335
CPC分类号： H01L27/14643 , H01L27/14621 , H01L27/14627
摘要： An image sensor improving the uniformity of effective incident light. In one example, the size of microlenses disposed in different regions of the image sensor is changed to balance the brightness in different regions, in which the size of each microlens is a function of the distance between the microlens to the chip center In another example, the distance between the center of the microlens and the center of the corresponding sensing area is changed to balance the brightness in different regions and the corresponding color filters are shifted such that the microlens is overlying a corresponding color filter unit without overlying adjacent regions thereof, in which the distance between the center of the microlens and the center of the corresponding sensing area is a function of the distance between the corresponding sensing area to the chip center.
摘要翻译：一种改善有效入射光均匀性的图像传感器。在一个示例中，设置在图像传感器的不同区域中的微透镜的尺寸被改变以平衡不同区域中的亮度，其中每个微透镜的尺寸是微透镜与芯片中心之间的距离的函数。在另一示例中，改变微透镜的中心与相应感测区域的中心之间的距离，以平衡不同区域中的亮度，并且相应的滤色器被移位，使得微透镜覆盖相应的滤色器单元而不覆盖其相邻区域，其中微透镜的中心与相应感测区域的中心之间的距离是与芯片中心的相应感测区域之间的距离的函数。

6. 发明申请

US20050001281A1 Process to improve image sensor sensitivity 审中-公开
标题翻译：提高图像传感器灵敏度的过程
公开(公告)号：US20050001281A1
公开(公告)日：2005-01-06
申请号：US10858443
申请日：2004-06-01
申请人： Hung-Jen Hsu , Chiu-Kung Chang , Fu-Tien Wong , Te-Fu Tseng
发明人： Hung-Jen Hsu , Chiu-Kung Chang , Fu-Tien Wong , Te-Fu Tseng
IPC分类号： G02B3/00 , G02B27/09 , H01L27/146 , H01L27/148 , H04N5/335 , G02B9/00
CPC分类号： G02B3/0012 , G02B3/0056 , G02B27/09
摘要： A packaged image sensing device of improved sensitivity is formed by providing a mechanism for enhancing the focusing of embedded microlenses on the photosensitive elements of the image sensor. Normally, the bonding material interposed between the packaging layers and the microlenses defocuses the microlenses. In one embodiment of the present invention, the focus is restored by interposing an intermediate optically refractive layer between the bonding material and the lenses. In another embodiment, a bonding material with a lower index of refraction is used. In a final embodiment, the microlenses are formed in a material of a higher index of refraction.
摘要翻译：通过提供用于增强嵌入式微透镜在图像传感器的感光元件上的聚焦的机构来形成具有改进的灵敏度的封装图像感测装置。通常，插入在包装层和微透镜之间的接合材料使微透镜散焦。在本发明的一个实施例中，通过在接合材料和透镜之间插入中间光学折射层来恢复焦点。在另一个实施例中，使用具有较低折射率的接合材料。在最终实施例中，微透镜形成为具有较高折射率的材料。

7. 发明授权

US07508084B2 CMOS image sensor 有权
标题翻译： CMOS图像传感器
公开(公告)号：US07508084B2
公开(公告)日：2009-03-24
申请号：US11253956
申请日：2005-10-19
申请人： Hung-Jen Hsu , Fu-Tien Wong
发明人： Hung-Jen Hsu , Fu-Tien Wong
IPC分类号： H01L23/544 , H01L21/76 , H01L21/00
CPC分类号： H01L27/14632 , H01L27/14627 , H01L27/14645 , H01L27/14685 , H01L27/14687 , H01L27/14689 , Y10S438/975
摘要： A method for forming an image sensor device. An alignment mark is formed on or in a substrate with distance from the alignment mark to the substrate edge less than about 3 mm. An array of active photosensing pixels is formed on the substrate. At least one dielectric layer is formed covering the substrate and the array. A color filter photoresist is formed on the least one dielectric layer. Subsequent to removal of the color filter photoresist from the alignment mark, the color filter photoresist is exposed with alignment to the alignment mark.
摘要翻译：一种用于形成图像传感器装置的方法。在距离对准标记至基板边缘的距离小于约3mm的基板上或基板上形成对准标记。在衬底上形成有活性感光像素阵列。形成覆盖基板和阵列的至少一个电介质层。在至少一个电介质层上形成滤色器光致抗蚀剂。在从对准标记移除滤色器光致抗蚀剂之后，将滤色器光致抗蚀剂与对准标记对齐地曝光。

8. 发明授权

US06340547B1 Method of forming circuit patterns on semiconductor wafers using two optical steppers having nonaligned imaging systems 有权
标题翻译：使用具有非对准成像系统的两个光学步进器在半导体晶片上形成电路图案的方法
公开(公告)号：US06340547B1
公开(公告)日：2002-01-22
申请号：US09481032
申请日：2000-01-11
申请人： Ming-Fa Chen , Chih-Chien Hung , Chia-Hsiang Chen , Fu-Tien Wong
发明人： Ming-Fa Chen , Chih-Chien Hung , Chia-Hsiang Chen , Fu-Tien Wong
IPC分类号： G03F900
CPC分类号： G03F9/7003 , G03F7/70458 , G03F9/7046
摘要： A method of forming circuit patterns on a semiconductor wafer using two different image steppers having nonaligned optical image systems achieves optical alignment of multiple overlays with high accuracy. A first alignment mark is imaged by the first stepper onto a material layer deposited on the wafer, and a second alignment mark is imaged onto a subsequently deposited material layer using the second stepper. Alignment of the two marks, and thus of successively imaged, overlying circuit patterns, is achieved by translating the optical coordinates of the second alignment system into the those of the first alignment system, and then making corresponding two dimensional adjustment of the wafer position relative to the second stepper.
摘要翻译：使用具有非对准光学图像系统的两个不同的图像步进器在半导体晶片上形成电路图案的方法实现了高精度的多个覆盖层的光学对准。将第一对准标记由第一步进器成像到沉积在晶片上的材料层上，并且使用第二步进器将第二对准标记成像到随后沉积的材料层上。通过将第二对准系统的光学坐标转换为第一对准系统的光学坐标，然后相对于第二对准系统的晶片位置进行相应的二维调整来实现两个标记的对准，并且因此连续成像的上覆电路图案的对准第二步。

9. 发明申请

US20070087467A1 CMOS image sensor 有权
标题翻译： CMOS图像传感器
公开(公告)号：US20070087467A1
公开(公告)日：2007-04-19
申请号：US11253956
申请日：2005-10-19
申请人： Hung-Jen Hsu , Fu-Tien Wong
发明人： Hung-Jen Hsu , Fu-Tien Wong
IPC分类号： H01L21/00 , H01L23/02
CPC分类号： H01L27/14632 , H01L27/14627 , H01L27/14645 , H01L27/14685 , H01L27/14687 , H01L27/14689 , Y10S438/975
摘要： A method for forming an image sensor device. An alignment mark is formed on or in a substrate with distance from the alignment mark to the substrate edge less than about 3 mm. An array of active photosensing pixels is formed on the substrate. At least one dielectric layer is formed covering the substrate and the array. A color filter photoresist is formed on the least one dielectric layer. Subsequent to removal of the color filter photoresist from the alignment mark, the color filter photoresist is exposed with alignment to the alignment mark.
摘要翻译：一种用于形成图像传感器装置的方法。在距离对准标记至基板边缘的距离小于约3mm的基板上或基板上形成对准标记。在衬底上形成有活性感光像素阵列。形成覆盖基板和阵列的至少一个电介质层。在至少一个电介质层上形成滤色器光致抗蚀剂。在从对准标记移除滤色器光致抗蚀剂之后，将滤色器光致抗蚀剂与对准标记对齐地曝光。

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