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    • 7. 发明授权
    • Apparatus methods for controlling wafer temperature in chemical mechanical polishing
    • 用于控制化学机械抛光中晶片温度的装置方法
    • US06984162B2
    • 2006-01-10
    • US10722839
    • 2003-11-25
    • Nicolas BrightDavid J. Hemker
    • Nicolas BrightDavid J. Hemker
    • B24B1/00
    • B24B37/015B24B37/30
    • Apparatus controls the temperature of a wafer for chemical mechanical polishing operations. A wafer carrier wafer mounting surface positions a wafer adjacent to a thermal energy transfer unit for transferring energy relative to the wafer. A thermal energy detector oriented adjacent to the wafer mounting surface detects the temperature of the wafer. A controller is responsive to the detector for controlling the supply of thermal energy relative to the thermal energy transfer unit. Embodiments include defining separate areas of the wafer, providing separate sections of the thermal energy transfer unit for each separate area, and separately detecting the temperature of each separate area to separately control the supply of thermal energy relative to the thermal energy transfer unit associated with the separate area.
    • 设备控制用于化学机械抛光操作的晶片的温度。 晶片载体晶片安装表面将晶片邻近热能传递单元定位,以相对于晶片转移能量。 定位成与晶片安装表面相邻的热能检测器检测晶片的温度。 控制器响应于检测器来控制相对于热能传递单元的热能供应。 实施例包括限定晶片的分开的区域,为每个单独的区域提供热能传递单元的分开的部分,并且单独地检测每个分离区域的温度,以单独地控制相对于与所述热能传递单元相关联的热能传递单元的热能供应 分开区域。