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1. 发明授权

US07248084B2 Method for determining switching state of a transistor-based switching device 有权
标题翻译：用于确定基于晶体管的开关器件的开关状态的方法
公开(公告)号：US07248084B2
公开(公告)日：2007-07-24
申请号：US11108742
申请日：2005-04-19
申请人： Chun-Yen Huang , Hung-Der Su , Jing-Meng Liu , Chung-Lung Pai , Shih-Hui Chen , Yang-Ping Hung
发明人： Chun-Yen Huang , Hung-Der Su , Jing-Meng Liu , Chung-Lung Pai , Shih-Hui Chen , Yang-Ping Hung
IPC分类号： H03K3/00
CPC分类号： H03K17/0822 , H03K3/00 , H03K17/00 , H03K17/18 , H03K17/6871
摘要： A method, which is for determining switching state of a transistor-based switching device that includes a set of transistors, includes the steps of: applying a bias voltage to a transistor having a fastest response so as to dispose the transistors in the set in a desired transistor state; detecting a voltage level at a transistor having a slowest response to the bias voltage; and comparing the detected voltage level with a predetermined threshold voltage level in order to determine the switching state of the switching device. A transistor-based switching device is also disclosed.
摘要翻译：一种用于确定包括一组晶体管的基于晶体管的开关器件的开关状态的方法包括以下步骤：将偏置电压施加到具有最快响应的晶体管，以将晶体管置于该组中的晶体管中所需晶体管状态; 检测对所述偏置电压具有最慢响应的晶体管的电压电平; 以及将检测到的电压电平与预定阈值电压电平进行比较，以便确定开关器件的开关状态。还公开了一种基于晶体管的开关器件。

2. 发明申请

US20060109046A1 Method for determining switching state of a transistor-based switching device 有权
标题翻译：用于确定基于晶体管的开关器件的开关状态的方法
公开(公告)号：US20060109046A1
公开(公告)日：2006-05-25
申请号：US11108742
申请日：2005-04-19
申请人： Chun-Yen Huang , Hung-Der Su , Jing-Meng Liu , Chung-Lung Pai , Shih-Hui Chen , Yang-Ping Hung
发明人： Chun-Yen Huang , Hung-Der Su , Jing-Meng Liu , Chung-Lung Pai , Shih-Hui Chen , Yang-Ping Hung
IPC分类号： H03K17/00
CPC分类号： H03K17/0822 , H03K3/00 , H03K17/00 , H03K17/18 , H03K17/6871
摘要： A method, which is for determining switching state of a transistor-based switching device that includes a set of transistors, includes the steps of: applying a bias voltage to a transistor having a fastest response so as to dispose the transistors in the set in a desired transistor state; detecting a voltage level at a transistor having a slowest response to the bias voltage; and comparing the detected voltage level with a predetermined threshold voltage level in order to determine the switching state of the switching device. A transistor-based switching device is also disclosed.
摘要翻译：一种用于确定包括一组晶体管的基于晶体管的开关器件的开关状态的方法包括以下步骤：将偏置电压施加到具有最快响应的晶体管，以将晶体管置于该组中的晶体管中所需晶体管状态; 检测对所述偏置电压具有最慢响应的晶体管的电压电平; 以及将检测到的电压电平与预定阈值电压电平进行比较，以便确定开关器件的开关状态。还公开了一种基于晶体管的开关器件。

3. 发明授权

US08022672B2 Charger control circuit and charger control method 失效
标题翻译：充电器控制电路和充电器控制方式
公开(公告)号：US08022672B2
公开(公告)日：2011-09-20
申请号：US12378114
申请日：2009-02-11
申请人： Chung-Lung Pai , Shih-Hui Chen
发明人： Chung-Lung Pai , Shih-Hui Chen
IPC分类号： H02J7/00 , H02J7/04 , H02M3/335
CPC分类号： H02J7/345 , H02M3/33507
摘要： The present invention discloses a charger control circuit and a charger control method for controlling a charger having a transformer, the transformer including a primary winding and a secondary winding. The charger control circuit comprises: a power switch coupled to the primary winding; a switch control circuit controlling the operation of the power switch; and a detection circuit which generates a signal according to a voltage at a node between the power switch and the primary winding, and supplies the signal to the switch control circuit.
摘要翻译：本发明公开了一种用于控制具有变压器的充电器的充电器控制电路和充电器控制方法，所述变压器包括初级绕组和次级绕组。充电器控制电路包括：耦合到初级绕组的功率开关; 开关控制电路，控制电源开关的动作; 以及检测电路，其根据功率开关和初级绕组之间的节点处的电压产生信号，并将信号提供给开关控制电路。

4. 发明申请

US20090243551A1 Charger control circuit and charger control method 失效
标题翻译：充电器控制电路和充电器控制方式
公开(公告)号：US20090243551A1
公开(公告)日：2009-10-01
申请号：US12378114
申请日：2009-02-11
申请人： Chung-Lung Pai , Shih-Hui Chen
发明人： Chung-Lung Pai , Shih-Hui Chen
IPC分类号： H02J7/06
CPC分类号： H02J7/345 , H02M3/33507
摘要： The present invention discloses a charger control circuit and a charger control method for controlling a charger having a transformer, the transformer including a primary winding and a secondary winding. The charger control circuit comprises: a power switch coupled to the primary winding; a switch control circuit controlling the operation of the power switch; and a detection circuit which generates a signal according to a voltage at a node between the power switch and the primary winding, and supplies the signal to the switch control circuit.
摘要翻译：本发明公开了一种用于控制具有变压器的充电器的充电器控制电路和充电器控制方法，所述变压器包括初级绕组和次级绕组。充电器控制电路包括：耦合到初级绕组的功率开关; 开关控制电路，控制电源开关的动作; 以及检测电路，其根据功率开关和初级绕组之间的节点处的电压产生信号，并将信号提供给开关控制电路。

5. 发明申请

US20070030046A1 Delay cell using a capacitor displacement current 审中-公开
标题翻译：延迟电池使用电容器位移电流
公开(公告)号：US20070030046A1
公开(公告)日：2007-02-08
申请号：US11492018
申请日：2006-07-25
申请人： Chung-Lung Pai , Shih-Hui Chen
发明人： Chung-Lung Pai , Shih-Hui Chen
IPC分类号： H03H11/26
CPC分类号： H03H11/265
摘要： In a delay cell, a capacitor and a current mirror are configured to have an equivalent capacitance, and the current mirror establishes a capacitor displacement current to charge the capacitor, by which it is equivalently generated a much smaller current to charge the capacitor for a desired delay time. Therefore, the actual layout is much reduced in size for the capacitor, and the capacitor could be implemented within a chip.
摘要翻译：在延迟单元中，电容器和电流镜被配置为具有等效电容，并且电流镜形成电容器位移电流以对电容器充电，由此等效地产生电流更小的电流以对所需电容器充电延迟时间。因此，电容器的实际布局大大减小，并且电容器可以在芯片内实现。

6. 发明申请

US20080180014A1 LED heat sink 审中-公开
标题翻译： LED散热片
公开(公告)号：US20080180014A1
公开(公告)日：2008-07-31
申请号：US11699071
申请日：2007-01-29
申请人： Jing-Wen Tzeng , Shih-Hui Chen
发明人： Jing-Wen Tzeng , Shih-Hui Chen
IPC分类号： H01K1/58
CPC分类号： F21K9/00 , F21V29/71 , F21V29/763 , H01L33/642 , H01L2224/48091 , H05K1/0204 , H05K2201/10106 , H05K2201/10416 , H01L2924/00014
摘要： A heat sink for a light emitting diode includes a light emitting diode disposed on a circuit board; a through hole is provided on the circuit board corresponding to where the light emitting diode is located; a heat sink is disposed to the through hole; the heat sink is secured to the circuit board by means of the through hole to directly contact the light emitting diode; and the heat generated from the light emitting diode in operation is effectively dissipated by the heat sink.
摘要翻译：用于发光二极管的散热器包括设置在电路板上的发光二极管; 在对应于发光二极管的位置的电路板上设置通孔; 散热器设置在通孔中; 散热器通过通孔固定到电路板上，以直接接触发光二极管; 并且由运行中的发光二极管产生的热量被散热器有效地消散。

7. 发明申请

US20120114997A1 CHARGEABLE BATTERY MODULE OF ELECTRIC CAR 有权
标题翻译：电动车充电电池模块
公开(公告)号：US20120114997A1
公开(公告)日：2012-05-10
申请号：US12940502
申请日：2010-11-05
申请人： Shih-Hui Chen , Chin-Tien Lin , Tung-Han Kao
发明人： Shih-Hui Chen , Chin-Tien Lin , Tung-Han Kao
IPC分类号： H01M2/10
CPC分类号： H01M2/1077 , H01M2/024 , H01M2/206 , H01M10/441
摘要： A chargeable battery module installed in an electric car for driving the electric car includes a compartment for containing a plurality of chargeable batteries, and circuits of each chargeable battery are connected in series or in parallel and installed between each chargeable battery and an upper casing or a lower casing of the compartment, and each chargeable battery is combined for use, and the chargeable batteries including a single chargeable battery or a module of parallelly connected chargeable batteries can be charged easily without requiring a charging protection plate, and all single batteries can be fully charged with a constant voltage to provide the best cycle life of the chargeable batteries and maintain the best battery life for the electric car.
摘要翻译：安装在用于驱动电动汽车的电动车中的可充电电池模块包括：用于容纳多个可充电电池的隔室，并且每个可充电电池的电路串联或并联连接，并安装在每个可充电电池与上壳体或并且每个可充电电池组合使用，并且可以容易地对包括单个可充电电池或并联连接的可充电电池的模块的可充电电池进行充电，而不需要充电保护板，并且所有单个电池可以完全充电恒定电压，以提供可充电电池的最佳循环寿命，并保持电动汽车的最佳电池寿命。

8. 发明申请

US20100190046A1 Power Bank Apparatus 失效
标题翻译：电力银行设备
公开(公告)号：US20100190046A1
公开(公告)日：2010-07-29
申请号：US12173876
申请日：2008-07-16
申请人： Shih-Hui Chen , Chih-Tien Lin
发明人： Shih-Hui Chen , Chih-Tien Lin
IPC分类号： H01M6/42 , H01M6/00
CPC分类号： H01M10/46 , H01R31/06 , H02J7/0054 , Y10T307/625
摘要： A power bank apparatus includes a power storage unit, a first power output port and a first power input port. The power storage unit is connected to the first power input and output ports. The power bank apparatus is connected to a controller through the first power output port. The controller includes a control unit, a second power input port and a second power output port. The control unit is connected to the second power input and output ports, and the second power input port is connected to the first power output port, and the control unit is provided for controlling an output voltage value of the second power output port.
摘要翻译：动力储存装置包括蓄电单元，第一电力输出端口和第一电力输入端口。蓄电单元连接到第一电源输入和输出端口。动力储存装置通过第一动力输出口与控制器连接。控制器包括控制单元，第二电源输入端口和第二电力输出端口。控制单元连接到第二电力输入和输出端口，第二电力输入端口连接到第一电力输出端口，并且控制单元用于控制第二电力输出端口的输出电压值。

9. 发明申请

US20070060210A1 Strap attached with a cell unit 审中-公开
标题翻译：表带附有单元单元
公开(公告)号：US20070060210A1
公开(公告)日：2007-03-15
申请号：US11195706
申请日：2005-08-03
申请人： Shih-Hui Chen , Chin-Tien Lin
发明人： Shih-Hui Chen , Chin-Tien Lin
IPC分类号： H04B1/38
CPC分类号： H04B1/3883 , H02J7/0044 , H02J7/0054
摘要： A strap of a bag containing an electronic product such as a notebook, PDA, or cellular phone, is attached with a cell unit; the a cell unit connected and supplying power to the electronic product by means of a or a plurality of connection member.
摘要翻译：包含诸如笔记本，PDA或蜂窝电话的电子产品的袋子的皮带附着有电池单元; 电池单元通过一个或多个连接构件连接并向电子产品供电。

10. 发明授权

US06734493B2 Lateral double diffused metal oxide semiconductor (LDMOS) device with aligned buried layer isolation layer 有权
标题翻译：具有对准埋层隔离层的横向双扩散金属氧化物半导体（LDMOS）器件
公开(公告)号：US06734493B2
公开(公告)日：2004-05-11
申请号：US10071431
申请日：2002-02-08
申请人： Shih-Hui Chen , Chi-Hung Kao , Jeng Gong , Kuo-Hsu Huang , Meng-Chi Wu , Jia-Rong Yu
发明人： Shih-Hui Chen , Chi-Hung Kao , Jeng Gong , Kuo-Hsu Huang , Meng-Chi Wu , Jia-Rong Yu
IPC分类号： H01L2972
CPC分类号： H01L29/1083 , H01L29/7835
摘要： Within both a lateral double diffused metal oxide semiconductor (LDMOS) device, and a method for fabrication thereof, there is formed a buried layer of polarity equivalent with a well region within which is formed a drain region. The buried layer is formed laterally aligned with respect to the well region, and separated therefrom by a portion of an epitaxial layer. The lateral double diffused metal oxide semiconductor (LDMOS) device exhibits enhanced electrical performance.
摘要翻译：在横向双扩散金属氧化物半导体（LDMOS）器件及其制造方法中，形成了与阱区极性等效的掩埋层，在其中形成漏极区。掩埋层相对于阱区横向对齐形成，并由外延层的一部分与之分离。横向双扩散金属氧化物半导体（LDMOS）器件表现出增强的电性能。

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