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1. 发明授权

US09000464B2 Semiconductor structure for substrate separation and method for manufacturing the same 有权
标题翻译：用于基板分离的半导体结构及其制造方法
公开(公告)号：US09000464B2
公开(公告)日：2015-04-07
申请号：US13409486
申请日：2012-03-01
申请人： Chun-Yen Chang , Po-Min Tu , Jet-Rung Chang
发明人： Chun-Yen Chang , Po-Min Tu , Jet-Rung Chang
IPC分类号： H01L33/60 , H01L29/06 , H01L33/00 , H01L33/32 , H01L33/08
CPC分类号： H01L33/0079 , H01L29/06 , H01L33/08 , H01L33/32 , H01L33/60
摘要： A semiconductor structure includes a temporary substrate; a first semiconductor layer positioned on the temporary substrate; a dielectric layer comprising a plurality of patterned nano-scaled protrusions disposed on the first semiconductor layer; a dielectric layer surrounding the plurality of patterned nano-scaled protrusions and disposed on the first semiconductor layer; and a second semiconductor layer positioned on the dielectric layer, wherein the top surfaces of the patterned nano-scaled protrusions are in contact with the bottom of the second semiconductor layer. An etching process is performed on the semiconductor structure to separate the first semiconductor layer and the second semiconductor layer, in order to detach the temporary substrate from the second semiconductor layer and transfer the second semiconductor layer to a permanent substrate.
摘要翻译：半导体结构包括临时衬底; 位于临时衬底上的第一半导体层; 介电层，包括设置在所述第一半导体层上的多个图案化纳米级突起; 围绕所述多个图案化纳米尺度突起且设置在所述第一半导体层上的介电层; 以及位于所述介电层上的第二半导体层，其中所述图案化纳米级突起的顶表面与所述第二半导体层的底部接触。对半导体结构进行蚀刻处理以分离第一半导体层和第二半导体层，以便将临时衬底从第二半导体层分离并将第二半导体层转移到永久衬底。

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