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    • 8. 发明授权
    • Mixed voltage input/output buffer having low-voltage design
    • 具有低电压设计的混合电压输入/输出缓冲器
    • US07532034B2
    • 2009-05-12
    • US11489325
    • 2006-07-19
    • Ming-Dou KerShih-Lun Chen
    • Ming-Dou KerShih-Lun Chen
    • H03K19/0175H03K19/00H03K10/02
    • H03K19/018528
    • A mixed-voltage input/output buffer having low-voltage design comprises a pre-driver, a tracking unit, a driving unit, and input/output pad, a floating-well unit and a transporting unit. The pre-driver receives first data signal and enable signal and outputs first and second data voltages. The tracking unit provides Gate-Tracking function. The driving unit couples the pre-driver and the tracking unit for production of a first buffer voltage corresponding to the first data voltage. The input/output pad couples the driving unit to output a first buffer voltage and to receive a second data signal. The output unit is used for outputting a second buffer voltage corresponding to the second data signal. The floating-well unit couples to the driving unit and the input/output pad in order to output first buffer voltage and receive second data signal. The floating-well unit is used for preventing leakage current.
    • 具有低电压设计的混合电压输入/输出缓冲器包括预驱动器,跟踪单元,驱动单元和输入/输出垫,浮动井单元和传送单元。 预驱动器接收第一数据信号并使能信号并输出​​第一和第二数据电压。 跟踪单元提供Gate-Tracking功能。 驱动单元耦合预驱动器和跟踪单元,用于产生对应于第一数据电压的第一缓冲电压。 输入/输出焊盘耦合驱动单元以输出第一缓冲电压并接收第二数据信号。 输出单元用于输出对应于第二数据信号的第二缓冲电压。 浮动单元耦合到驱动单元和输入/输出垫,以便输出第一缓冲电压并接收第二数据信号。 浮动井单元用于防止漏电流。
    • 9. 发明授权
    • Apparatus for reducing read latency by adjusting clock and read control signals timings to a memory device
    • 用于通过将时钟和读取控制信号定时调整到存储器件来减少读取等待时间的装置
    • US09058898B1
    • 2015-06-16
    • US14256998
    • 2014-04-21
    • Ming-Jing HoShih-Lun ChenYu-Ming Sun
    • Ming-Jing HoShih-Lun ChenYu-Ming Sun
    • G11C7/00G11C11/4076G11C11/4091
    • G11C11/4076G11C7/1066G11C11/4091
    • The present invention discloses an efficient way to read data from a memory device by aligning an internal clock of the memory interface circuit with the read data strobe signal from the memory device by delaying the internal clock along with control signals for reading the memory device before transmitting them to the memory device, wherein the internal clock of the memory controller can sample the read data from the memory device directly without using a FIFO device between the internal clock and the read data strobe so as to reduce latency of reading data from the memory device. For example, the memory device can be a double-data-rate (DDR) DRAM device, and the control signals includes command and address signals of the DDR DRAM device.
    • 本发明公开了一种从存储器件读取数据的有效方式,通过将存储器接口电路的内部时钟与来自存储器件的读取数据选通信号进行对准,通过在发送之前延迟内部时钟以及用于读取存储器件的控制信号 它们到存储器件,其中存储器控制器的内部时钟可以直接从存储器件采样读取数据,而不需要在内部时钟和读取数据选通之间使用FIFO器件,从而减少从存储器件读取数据的等待时间 。 例如,存储器件可以是双数据速率(DDR)DRAM器件,并且控制信号包括DDR DRAM器件的命令和地址信号。
    • 10. 发明授权
    • Signal delay circuit and signal delay method
    • 信号延迟电路和信号延迟方式
    • US08779821B2
    • 2014-07-15
    • US13480492
    • 2012-05-25
    • Shih-Lun ChenMing-Jing Ho
    • Shih-Lun ChenMing-Jing Ho
    • H03H11/26H03K5/13H03K5/135
    • H03K5/133H03K5/135H03K5/14
    • A signal delay circuit comprising: a first delay stage, for delaying a first input signal to generate a first delay signal; and a second delay stage, for cooperating with part of delay units of the first delay stage to delay the first delay signal to generate a second delay signal. The signal delay circuit selectively enables the delay stages of the first delay stage or the second delay stage, wherein the signal delay circuit mixes the first delay signal and the second delay signal to generate a first mixed signal when the first delay stage and the second delay stage are both enabled.
    • 一种信号延迟电路,包括:第一延迟级,用于延迟第一输入信号以产生第一延迟信号; 以及第二延迟级,用于与第一延迟级的延迟单元的一部分协作以延迟第一延迟信号以产生第二延迟信号。 所述信号延迟电路选择性地启动所述第一延迟级或所述第二延迟级的延迟级,其中所述信号延迟电路混合所述第一延迟信号和所述第二延迟信号以在所述第一延迟级和所述第二延迟阶段产生第一混合信号 舞台都启用了。