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    • 1. 发明授权
    • Method of making multi-layer structure for metal-insulator-metal capacitor
    • 制造金属绝缘子金属电容器多层结构的方法
    • US07915135B2
    • 2011-03-29
    • US12432772
    • 2009-04-30
    • Chun-Kai WangChun-Chih HuangChun-Ming Wu
    • Chun-Kai WangChun-Chih HuangChun-Ming Wu
    • H01L21/20H01L21/8242
    • H01L28/75Y10T29/43
    • The present invention discloses a method of making a multi-layer structure for metal-insulator-metal capacitors, in which, a bottom electrode plate layer is formed on a substrate, wherein a Ti/TiN layer serving as a top anti-reflection coating (top ARC) of the bottom electrode plate layer including a titanium layer and a titanium nitride layer formed on the titanium layer is formed using a first and a second physical vapor deposition (PVD) processes at a temperature ranging from 25 to 400° C., and then a first capacitor dielectric layer, a middle electrode plate layer, a second capacitor dielectric layer, and a top electrode plate layer are formed on the bottom electrode plate layer in an order from bottom to top.
    • 本发明公开了一种金属 - 绝缘体 - 金属电容器的多层结构的制造方法,其中,在基板上形成有底部电极板层,其中,作为顶部防反射膜的Ti / TiN层( 使用在25〜400℃的温度范围内的第一和第二物理气相沉积(PVD)工艺形成包括形成在钛层上的钛层和氮化钛层的底部电极板层的底部电极板层的顶部ARC) 然后从底部到顶部的顺序,在底部电极板层上形成第一电容器电介质层,中间电极板层,第二电容器电介质层和顶部电极板层。
    • 2. 发明申请
    • Method of making multi-layer structure for metal-insulator-metal capacitor
    • 制造金属绝缘子金属电容器多层结构的方法
    • US20100279484A1
    • 2010-11-04
    • US12432772
    • 2009-04-30
    • Chun-Kai WangChun-Chih HuangChun-Ming Wu
    • Chun-Kai WangChun-Chih HuangChun-Ming Wu
    • H01L21/02
    • H01L28/75Y10T29/43
    • The present invention discloses a method of making a multi-layer structure for metal-insulator-metal capacitors, in which, a bottom electrode plate layer is formed on a substrate, wherein a Ti/TiN layer serving as a top anti-reflection coating (top ARC) of the bottom electrode plate layer including a titanium layer and a titanium nitride layer formed on the titanium layer is formed using a first and a second physical vapor deposition (PVD) processes at a temperature ranging from 25 to 400° C., and then a first capacitor dielectric layer, a middle electrode plate layer, a second capacitor dielectric layer, and a top electrode plate layer are formed on the bottom electrode plate layer in an order from bottom to top.
    • 本发明公开了一种金属 - 绝缘体 - 金属电容器的多层结构的制造方法,其中,在基板上形成有底部电极板层,其中,作为顶部防反射膜的Ti / TiN层( 使用在25〜400℃的温度范围内的第一和第二物理气相沉积(PVD)工艺形成包括形成在钛层上的钛层和氮化钛层的底部电极板层的底部电极板层的顶部ARC) 然后从底部到顶部的顺序,在底部电极板层上形成第一电容器电介质层,中间电极板层,第二电容器电介质层和顶部电极板层。
    • 4. 发明授权
    • Cassette structure with a card connector
    • 带有卡连接器的盒式结构
    • US06667888B1
    • 2003-12-23
    • US10224611
    • 2002-08-21
    • Cheng-Tsai ChangChin-Fa LeeChun-Chih Huang
    • Cheng-Tsai ChangChin-Fa LeeChun-Chih Huang
    • H05K114
    • H05K5/0269
    • A structure of the cassette with a card connector is disclosed. The cassette comprises a chassis, an upper metallic board, a lid, and a bottom metallic board. The upper metallic board is detachably mounted onto the top of the chassis by engaging a plurality of fitting elements of the upper metallic board with the receiving cavities and slots of the chassis. The slot of the lid is slid into the groove of the chassis, until the protruded shafts of the lid fits into the corresponding receiving cavities on the chassis, and a front part of the lid stacks on a distal plate of the upper metallic board for securely coupling the upper metallic board onto the chassis. Thus, the present invention not only allows the repair, or replacement of parts of the PCB, or the replacement of the PCB, but also reuse of the parts of the cassette.
    • 公开了具有卡连接器的盒的结构。 盒子包括底盘,上金属板,盖子和底部金属板。 上金属板通过将上金属板的多个装配元件与底盘的接收腔和槽接合而可拆卸地安装在底盘的顶部上。 盖的槽滑入底盘的槽中,直到盖的突出的轴适配到底盘上相应的接收腔中,并且盖的前部在上金属板的远侧板上堆叠,以便安全地 将上金属板连接到底盘上。 因此,本发明不仅允许修复或更换PCB的部件或更换PCB,而且还可以重新使用盒的部件。
    • 10. 发明授权
    • Multipurposes memory card connector
    • 多用途存储卡连接器
    • US06900982B2
    • 2005-05-31
    • US10694856
    • 2003-10-29
    • Cheng-Tsai ChangChun-Chih HuangYu-Hui ChienYi-Fen Huang
    • Cheng-Tsai ChangChun-Chih HuangYu-Hui ChienYi-Fen Huang
    • G06F1/16G06F1/18H01R27/00
    • G06F1/182A45C2011/188H01R12/721H01R27/00
    • A multipurpose memory card connector includes an electrically insulative housing defining a front-open receiving open chamber, the housing having a first set of terminals disposed at the rear side inside and second and third sets of terminals disposed near the front open side of the receiving open chamber, and a slide slidably mounted inside the receiving open chamber, the slide having a first stop face disposed at a rear bottom side thereof and second and third stop faces respectively spaced from the first stop face at a distance adapted to receive insertion force from one of a number of memory cards for enabling the slide to be moved in the receiving open chamber at a distance subject to the type of the memory card being inserted into the receiving open chamber.
    • 多用途存储卡连接器包括限定前开口接收开放室的电绝缘壳体,所述壳体具有设置在后侧内部的第一组端子,以及设置在接收开口的前开口侧附近的第二和第三组端子 并且滑动件可滑动地安装在所述接收开放室内部,所述滑块具有设置在其后底侧的第一止动面和分别与所述第一止动面间隔开的距离的第二和第三止动面,所述距离适于接收来自一个的插入力 的许多存储卡,用于使得滑块能够在存储卡的类型被插入到接收开放室内的距离处在接收开放室中移动。