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1. 发明申请

US20070057332A1 Thin film transistor and fabrication method thereof 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20070057332A1
公开(公告)日：2007-03-15
申请号：US11598844
申请日：2006-11-13
申请人： Shih-Chang Chang , De-Hua Deng , Chun-Hsiang Fang , Yaw-Ming Tsai
发明人： Shih-Chang Chang , De-Hua Deng , Chun-Hsiang Fang , Yaw-Ming Tsai
IPC分类号： H01L29/76
CPC分类号： H01L27/1214 , H01L27/127 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L29/78645
摘要： A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and the second doped region. A gate insulating layer formed overlying the active layer has a central region, a shielding region and an extending region. The shielding region is disposed between the central region and the extending region, the central region covers the channel region, the shielding region covers the first doped region, and the extending region covers the second doped region. The shielding region is thicker than the extending region. A gate layer is formed overlying the gate insulating layer, covers the central region and exposes the shielding region and the extending region.
摘要翻译：具有自对准轻掺杂区域的薄膜晶体管（TFT）及其制造方法。有源层具有沟道区，第一掺杂区和第二掺杂区，其中第一掺杂区设置在沟道区和第二掺杂区之间。形成在有源层上的栅极绝缘层具有中心区域，屏蔽区域和延伸区域。屏蔽区域设置在中心区域和延伸区域之间，中心区域覆盖沟道区域，屏蔽区域覆盖第一掺杂区域，延伸区域覆盖第二掺杂区域。屏蔽区域比扩展区域厚。形成覆盖栅极绝缘层的栅极层，覆盖中心区域并使屏蔽区域和延伸区域露出。

2. 发明申请

US20060114190A1 ACTIVE MATRIX ORGANIC ELECTRO-LUMINESCENCE DEVICE ARRAY 审中-公开
标题翻译：有源矩阵有机电致发光器件阵列
公开(公告)号：US20060114190A1
公开(公告)日：2006-06-01
申请号：US10904547
申请日：2004-11-16
申请人： Chun-Hsiang Fang , Shih-Chang Chang
发明人： Chun-Hsiang Fang , Shih-Chang Chang
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G2300/0465 , G09G2320/0242 , G09G2320/043 , H01L27/3216
摘要： An active matrix organic electro-luminescence device array comprising first sub-pixel regions and second sub-pixel regions defined by scan lines and data lines is provided. Each first sub-pixel region has a first light emitting device, a first control unit and a second control unit therein while each second sub-pixel region has a second light emitting device therein. The first control unit is electrically connected to the first light emitting device for driving the first light emitting device. The second control unit is electrically connected to the second light emitting device for driving the second light emitting device. The second light emitting device having poor light emitting efficiency per unit area is disposed in the second sub-pixel region for increasing its light emitting area so that the first and second light emitting devices may have uniform brightness when drive with the same driving current.
摘要翻译：提供了包括由扫描线和数据线限定的第一子像素区域和第二子像素区域的有源矩阵有机电致发光器件阵列。每个第一子像素区域具有第一发光器件，第一控制单元和第二控制单元，而每个第二子像素区域中具有第二发光器件。第一控制单元电连接到用于驱动第一发光器件的第一发光器件。第二控制单元电连接到用于驱动第二发光装置的第二发光装置。在第二子像素区域设置具有每单位面积的发光效率差的第二发光器件，以增加其发光面积，使得当以相同的驱动电流驱动时，第一和第二发光器件可以具有均匀的亮度。

3. 发明授权

US07897445B2 Fabrication methods for self-aligned LDD thin-film transistor 有权
标题翻译：自对准LDD薄膜晶体管的制造方法
公开(公告)号：US07897445B2
公开(公告)日：2011-03-01
申请号：US11709480
申请日：2007-02-21
申请人： Shih Chang Chang , De-Hua Deng , Chun-Hsiang Fang , Yaw-Ming Tsai , Chang-Ho Tseng
发明人： Shih Chang Chang , De-Hua Deng , Chun-Hsiang Fang , Yaw-Ming Tsai , Chang-Ho Tseng
IPC分类号： H01L21/336
CPC分类号： H01L29/66757 , H01L29/78621 , H01L29/78645
摘要： A self-aligned LDD TFT and a fabrication method thereof. The method includes providing a semiconductor layer. A first masking layer is provided over a first region of the semiconductor layer, said first masking layer comprising a material that provide a permeable barrier to a dopant. The semiconductor layer is exposed, including the first region covered by the first masking layer, to the dopant, wherein the first region covered by the first masking layer is lightly doped with the dopant in comparison to a second region not covered by the first masking layer.
摘要翻译：自对准LDD TFT及其制造方法。该方法包括提供半导体层。第一掩模层设置在半导体层的第一区域上，所述第一掩蔽层包括为掺杂剂提供可渗透屏障的材料。半导体层被包括第一掩模层覆盖的第一区域暴露于掺杂剂，其中由第一掩模层覆盖的第一区域与未被第一掩模层覆盖的第二区域相比，轻掺杂掺杂剂。

4. 发明授权

US07388265B2 Thin film transistor and fabrication method thereof 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07388265B2
公开(公告)日：2008-06-17
申请号：US11598844
申请日：2006-11-13
申请人： Shih-Chang Chang , De-Hua Deng , Chun-Hsiang Fang , Yaw-Ming Tsai
发明人： Shih-Chang Chang , De-Hua Deng , Chun-Hsiang Fang , Yaw-Ming Tsai
IPC分类号： H01L29/76
CPC分类号： H01L27/1214 , H01L27/127 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L29/78645
摘要： A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and the second doped region. A gate insulating layer formed overlying the active layer has a central region, a shielding region and an extending region. The shielding region is disposed between the central region and the extending region, the central region covers the channel region, the shielding region covers the first doped region, and the extending region covers the second doped region. The shielding region is thicker than the extending region. A gate layer is formed overlying the gate insulating layer, covers the central region and exposes the shielding region and the extending region.
摘要翻译：具有自对准轻掺杂区域的薄膜晶体管（TFT）及其制造方法。有源层具有沟道区，第一掺杂区和第二掺杂区，其中第一掺杂区设置在沟道区和第二掺杂区之间。形成在有源层上的栅极绝缘层具有中心区域，屏蔽区域和延伸区域。屏蔽区域设置在中心区域和延伸区域之间，中心区域覆盖沟道区域，屏蔽区域覆盖第一掺杂区域，延伸区域覆盖第二掺杂区域。屏蔽区域比扩展区域厚。形成覆盖栅极绝缘层的栅极层，覆盖中心区域并使屏蔽区域和延伸区域露出。

5. 发明授权

US07145209B2 Thin film transistor and fabrication method thereof 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07145209B2
公开(公告)日：2006-12-05
申请号：US10850980
申请日：2004-05-20
申请人： Shih-Chang Chang , De-Hua Deng , Chun-Hsiang Fang , Yaw-Ming Tsai
发明人： Shih-Chang Chang , De-Hua Deng , Chun-Hsiang Fang , Yaw-Ming Tsai
IPC分类号： H01L29/94 , H01L31/062
CPC分类号： H01L27/1214 , H01L27/127 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L29/78645
摘要： A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and the second doped region. A gate insulating layer formed overlying the active layer has a central region, a shielding region and an extending region. The shielding region is disposed between the central region and the extending region, the central region covers the channel region, the shielding region covers the first doped region, and the extending region covers the second doped region. The shielding region is thicker than the extending region. A gate layer is formed overlying the gate insulating layer, covers the central region and exposes the shielding region and the extending region.
摘要翻译：具有自对准轻掺杂区域的薄膜晶体管（TFT）及其制造方法。有源层具有沟道区，第一掺杂区和第二掺杂区，其中第一掺杂区设置在沟道区和第二掺杂区之间。形成在有源层上的栅极绝缘层具有中心区域，屏蔽区域和延伸区域。屏蔽区域设置在中心区域和延伸区域之间，中心区域覆盖沟道区域，屏蔽区域覆盖第一掺杂区域，延伸区域覆盖第二掺杂区域。屏蔽区域比扩展区域厚。形成覆盖栅极绝缘层的栅极层，覆盖中心区域并使屏蔽区域和延伸区域露出。

6. 发明授权

US07414604B2 Method and circuit for driving liquid crystal display 有权
标题翻译：用于驱动液晶显示器的方法和电路
公开(公告)号：US07414604B2
公开(公告)日：2008-08-19
申请号：US10935860
申请日：2004-09-07
申请人： Ching-Wei Lin , Shih-Chang Chang , Chun-Hsiang Fang
发明人： Ching-Wei Lin , Shih-Chang Chang , Chun-Hsiang Fang
IPC分类号： G09G3/36
CPC分类号： G09G3/3648 , G09G2300/0876 , G09G2330/021
摘要： A method and circuit for driving LCD are provided. Because the conventional Vcom inversion drive method cannot be applied in a self-aligned process, the power consumption cannot be reduced when the size of the transistor decreases. The method and circuit provided uses two different AC signals to provide different reference voltages for the storage capacitor and the liquid crystal capacitor in a pixel respectively. Therefore, it can be applied to the self-aligned process to reduce the power consumption.
摘要翻译：提供了一种用于驱动LCD的方法和电路。由于传统的Vcom反转驱动方法不能应用于自对准过程中，所以当晶体管的尺寸减小时，功耗不能降低。所提供的方法和电路使用两个不同的AC信号来分别为像素中的存储电容器和液晶电容器提供不同的参考电压。因此，它可以应用于自对准过程以降低功耗。

7. 发明授权

US07238963B2 Self-aligned LDD thin-film transistor and method of fabricating the same 有权
标题翻译：自对准LDD薄膜晶体管及其制造方法
公开(公告)号：US07238963B2
公开(公告)日：2007-07-03
申请号：US10833487
申请日：2004-04-27
申请人： Shih Chang Chang , De-Hua Deng , Chun-Hsiang Fang , Yaw-Ming Tsai , Chang-Ho Tseng
发明人： Shih Chang Chang , De-Hua Deng , Chun-Hsiang Fang , Yaw-Ming Tsai , Chang-Ho Tseng
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/66757 , H01L29/78621 , H01L29/78645
摘要： A self-aligned LDD TFT and a fabrication method thereof. A substrate is provided, on which a semiconductor layer is formed. A first masking layer is provided over a first region of the portion of the semiconductor layer. The first masking layer includes a material that provides a permeable barrier to a dopant. The semiconductor layer including the first region covered by the first masking layer is exposed to the dopant, wherein the first region covered by the first masking layer is lightly doped with the dopant in comparison to a second region not covered by the first masking region.
摘要翻译：自对准LDD TFT及其制造方法。提供了形成半导体层的衬底。第一掩模层设置在半导体层的该部分的第一区域上。第一掩蔽层包括为掺杂剂提供可渗透屏障的材料。包括由第一掩蔽层覆盖的第一区域的半导体层暴露于掺杂剂，其中与未被第一掩蔽区域覆盖的第二区域相比，由第一掩模层覆盖的第一区域被轻掺杂掺杂剂。

8. 发明申请

US20050258488A1 Serially connected thin film transistors and fabrication methods thereof 审中-公开
标题翻译：串联薄膜晶体管及其制造方法
公开(公告)号：US20050258488A1
公开(公告)日：2005-11-24
申请号：US11189479
申请日：2005-07-26
申请人： Shih-Chang Chang , Chun-Hsiang Fang , Yaw-Ming Tsai
发明人： Shih-Chang Chang , Chun-Hsiang Fang , Yaw-Ming Tsai
IPC分类号： H01L21/336 , H01L21/77 , H01L29/786 , H01L31/0376
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66598 , H01L29/66757 , H01L29/78621
摘要： Serially connected thin film transistor (TFT) structure include an active layer shared by an N-type TFT region and a P-type TFT region. A contact hole is formed in an N/P junction between the N-type TFT region and the P-type TFT region and conductive carriers within an N-doped region at one end can be electrically connected to a P-doped region at the other end by a conductive layer formed in the contact hole, without formation of depletion regions at the N/P junction. Moreover, the N-type TFT region or the P-type TFT region is formed using the exposed gate insulating layer in mask regions on both sides of the gate electrode as ion implanting masks and lightly doped drain regions and source/drain regions are also simultaneously formed.
摘要翻译：串联的薄膜晶体管（TFT）结构包括由N型TFT区域和P型TFT区域共享的有源层。在N型TFT区域和P型TFT区域之间的N / P结中形成接触孔，并且在一端的N掺杂区域内的导电载体可以在另一端的P掺杂区域电连接通过在接触孔中形成的导电层而不在N / P结处形成耗尽区。而且，作为离子注入掩模和轻掺杂漏极区域以及源极/漏极区域也同时在栅电极的两侧的掩模区域中使用暴露的栅极绝缘层形成N型TFT区域或P型TFT区域形成。

9. 发明申请

US20050074914A1 Semiconductor device and method of fabrication the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20050074914A1
公开(公告)日：2005-04-07
申请号：US10960183
申请日：2004-10-06
申请人： Shih-Chang Chang , Chun-Hsiang Fang , Yaw-Ming Tsai
发明人： Shih-Chang Chang , Chun-Hsiang Fang , Yaw-Ming Tsai
IPC分类号： H01L21/00 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/127 , H01L29/66757 , H01L29/78621 , H01L29/78624
摘要： A method of forming a semiconductor device. A first and a second semiconductor structures are formed. A semiconductor layer is provided. A first masking layer over a first region of the semiconductor layer is provided. The first masking layer comprises a material that provides a permeable barrier to dopant. The semiconductor layer, including the first region covered by the first masking layer, is exposed to a first dopant. The first region covered by the first masking layer is lightly doped with the first dopant in comparison to a second region not covered by the first masking layer.
摘要翻译：一种形成半导体器件的方法。形成第一和第二半导体结构。提供半导体层。提供了半导体层的第一区域上的第一掩模层。第一掩蔽层包括为掺杂剂提供可渗透屏障的材料。包括由第一掩模层覆盖的第一区域的半导体层暴露于第一掺杂剂。与未被第一掩模层覆盖的第二区域相比，由第一掩模层覆盖的第一区域被轻掺杂第一掺杂剂。

10. 发明申请

US20050057476A1 Method and circuit for driving liquid crystal display 有权
标题翻译：用于驱动液晶显示器的方法和电路
公开(公告)号：US20050057476A1
公开(公告)日：2005-03-17
申请号：US10935860
申请日：2004-09-07
申请人： Ching-Wei Lin , Shih-Chang Chang , Chun-Hsiang Fang
发明人： Ching-Wei Lin , Shih-Chang Chang , Chun-Hsiang Fang
IPC分类号： G09G3/36
CPC分类号： G09G3/3648 , G09G2300/0876 , G09G2330/021
摘要： A method and circuit for driving LCD are provided. Because the conventional Vcom inversion drive method cannot be applied in a self-aligned process, the power consumption cannot be reduced when the size of the transistor decreases. The method and circuit provided uses two different AC signals to provide different reference voltages for the storage capacitor and the liquid crystal capacitor in a pixel respectively. Therefore, it can be applied to the self-aligned process to reduce the power consumption.
摘要翻译：提供了一种用于驱动LCD的方法和电路。由于传统的Vcom反转驱动方法不能应用于自对准过程中，所以当晶体管的尺寸减小时，功耗不能降低。所提供的方法和电路使用两个不同的AC信号来分别为像素中的存储电容器和液晶电容器提供不同的参考电压。因此，它可以应用于自对准过程以降低功耗。

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