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1. 发明授权

US5091571A Process for preparing N,N'-disubstituted urea 失效
标题翻译：制备N，N'-二取代脲的方法
公开(公告)号：US5091571A
公开(公告)日：1992-02-25
申请号：US606721
申请日：1990-10-31
申请人： Chul Woo Lee , Jae Sung Lee , Sang Moo Lee
发明人： Chul Woo Lee , Jae Sung Lee , Sang Moo Lee
IPC分类号： B01J27/13 , B01J31/28 , C07B61/00 , C07C273/18 , C07C275/28 , C07C275/30 , C07C275/34
CPC分类号： C07C273/1809 , C07C275/28
摘要： A process for preparing N, N-disubstituted urea and more particularly, to an improved process for preparing N,N'-disubstituted urea derivatives of the following formula (I) comprising ##STR1## wherein each of Ar.sup.1 and Ar.sup.2 represents unsubstituted aromatic radical or aromatic radical substituted with halogen, atom, alkyl group, or alkoxy group, and Ar.sup.1 and Ar.sup.2 are the same or different, reacting aromatic mono-nitro compound, aromatic primary amines, and carbon monoxide in the presence of the catalyst composition consisting of a palladium compound as a main catalyst and an ammonium or a phosphonium salt containing halogen atom aS a co-catalyst, and a non-polar solvent.
摘要翻译：更准确地说，涉及一种制备N，N-二取代脲的方法，更具体地说，涉及制备下式（I）的N，N'-二取代脲衍生物的改进方法，其包含其中Ar 1和Ar 2各自表示未取代的由卤素，原子，烷基或烷氧基取代的芳基或芳基，Ar 1和Ar 2可以相同或不同，在芳族单硝基化合物，芳族伯胺和一氧化碳的存在下，在催化剂组合物的钯化合物作为主要催化剂，以及含有卤素原子的铵盐或鏻盐，辅助催化剂和非极性溶剂。

2. 发明申请

US20200129990A1 Magnetic strainer 审中-公开
公开(公告)号：US20200129990A1
公开(公告)日：2020-04-30
申请号：US16253573
申请日：2019-01-22
申请人： Sang Moo Lee , Dae Ho Park
发明人： Sang Moo Lee , Dae Ho Park
IPC分类号： B03C1/031 , B01D35/02 , E03B7/07
摘要： The present invention relates to a magnetic strainer that is configured to have a cap disposed in a filter insertion hole formed on the center of a branch pipe having an inlet and an outlet coupled to a pipe and to have upper and lower magnets arranged with repulsive forces, while placing a repulsive space therebetween, in such a manner as to be accommodated in both ends of a magnet case in a longitudinal direction of the magnet case to allow conductors in impurities to be easily collected to the inside of a filtering screen disposed between the filter insertion hole and the cap to filter the impurities, so that if ascending and descending means disposed under the magnet case operates, the upper magnet is descended to the repulsive space to easily remove the conductors collected on the top end surface of the magnet case.

3. 发明申请

US20080015111A1 Method and apparatus for fabricating high temperature superconducting film through auxiliary cluster beam spraying, and high temperature superconducting film fabricated using the method 有权
标题翻译：通过辅助聚束束喷涂制造高温超导膜的方法和装置，以及使用该方法制造的高温超导膜
公开(公告)号：US20080015111A1
公开(公告)日：2008-01-17
申请号：US11653170
申请日：2007-01-12
申请人： Sang Soo Oh , Ho Seop Kim , Kyu Jung Song , Do Jun Youm , Sun Mi Lim , Yong Hwan Jung , Sang Moo Lee , Ye Hyun Jung , Jae Eun Yoo
发明人： Sang Soo Oh , Ho Seop Kim , Kyu Jung Song , Do Jun Youm , Sun Mi Lim , Yong Hwan Jung , Sang Moo Lee , Ye Hyun Jung , Jae Eun Yoo
IPC分类号： H01L39/24
CPC分类号： H01L39/2445 , C23C14/087 , C23C14/22 , H01L39/2483
摘要： Disclosed herein is a method of fabricating a high temperature superconducting film in a vacuum chamber through auxiliary cluster beam spraying using an evaporation method, wherein a high temperature superconducting material is deposited on a substrate in a vapor state by evaporating the high temperature superconducting material, and at the same time, a cluster beam material is formed into gas atoms by heating the cluster beam material charged in a housing, and the formed gas atoms pass through a nozzle of an inlet of the housing and then are sprayed and grown on the substrate in the form of the cluster beam, thereby forming pinning centers in the high temperature superconducting film.
摘要翻译：本文公开了一种通过使用蒸发法的辅助聚束束喷射在真空室中制造高温超导膜的方法，其中高温超导材料通过蒸发高温超导材料以蒸气状态沉积在基底上，以及同时，通过加热装入壳体中的聚束束材料，将聚束束材料形成为气体原子，并且所形成的气体原子通过壳体入口的喷嘴，然后在基板上喷雾和生长聚束束的形式，从而在高温超导膜中形成钉扎中心。

4. 发明申请

US20200031693A1 Device for manufacturing magnetized water 审中-公开
公开(公告)号：US20200031693A1
公开(公告)日：2020-01-30
申请号：US16253565
申请日：2019-01-22
申请人： Sang Moo Lee , Dae Ho Park
发明人： Sang Moo Lee , Dae Ho Park
IPC分类号： C02F1/48
摘要： The present invention relates to a device for manufacturing magnetized water including: an outer case; an adapter coupled to one end or both ends of the outer case; a magnet case having a body, accommodation portions facing each other, and end caps disposed on both longitudinal ends of the body; magnet parts each having a plurality of permanent magnets serially continuously arranged and accommodated in each accommodation portion; spacers insertedly disposed between the permanent magnets; and shield steel plates coupled to the magnet case, wherein attractive force generation arrangements and repulsive force generation arrangements of the permanent magnets are arbitrarily changed by means of the magnet case and the end caps separably coupled to each other.

5. 发明授权

US08476807B2 Rigid dual-servo nano stage 有权
标题翻译：刚性双伺服纳米级
公开(公告)号：US08476807B2
公开(公告)日：2013-07-02
申请号：US13054683
申请日：2009-04-17
申请人： Eun Goo Kang , Young Jae Choi , Seok Woo Lee , Sang Moo Lee , Kyung Tae Nam , Sang Hoon Ji
发明人： Eun Goo Kang , Young Jae Choi , Seok Woo Lee , Sang Moo Lee , Kyung Tae Nam , Sang Hoon Ji
IPC分类号： H01L41/083
CPC分类号： B28D5/0082 , H02N2/02 , H02N2/04
摘要： The present invention relates to a stage, particularly to, a stage which is able to move minutely, having a rigidity-improved transfer part. A stage includes a work table on which a working object is placed, a motor configured to provide a rotational force, a shaft rotated by the motor to transfer the work table, a linear moving part configured to be expandable to linearly move the shaft in an axial direction, the linear moving part having a hollow to insert an end of the shaft therein, and an expanding part configured to be expandable as far as the shaft is moved by the linear moving part.
摘要翻译：本发明涉及一种台阶，特别涉及能够精细移动的具有刚性改善的转印部分的台阶。舞台包括放置工作对象的工作台，构造成提供旋转力的电动机，由电动机旋转以转移工作台的轴;线性移动部件，被构造成可扩展以使轴在线性移动所述直线移动部件具有用于将所述轴的端部插入其中的中空部分，以及扩张部分，其构造成可扩张的，直到所述轴线被所述线性移动部件移动。

6. 发明授权

US07878039B2 Channel letter machine and method thereof 有权
标题翻译：信道机及其方法
公开(公告)号：US07878039B2
公开(公告)日：2011-02-01
申请号：US12234847
申请日：2008-09-22
申请人： Ju Woong Park , Man Sik Cho , Sang Moo Lee , Byoung-Young Song
发明人： Ju Woong Park , Man Sik Cho , Sang Moo Lee , Byoung-Young Song
IPC分类号： B21D11/20 , B21D43/00 , B21D28/02
CPC分类号： B21D11/10 , B21D5/04 , B21D19/00 , B21D35/00
摘要： A channel letter bending machine for bending a return of a channel letter from a stock includes a feeding unit disposed along a path of travel of the stock to be bent for feeding the stock, a flanging unit for forming a flange along one edge of the stock, a notching unit for notching the flange of the stock fed by the feeding mechanism along the path of travel, and a bending unit for bending the stock under the control of the computer control system into the desired configuration for the channel letter shape, wherein the notching unit and the flanging unit are disposed upstream of the bending unit and the flanging unit is disposed upstream of the notching unit.
摘要翻译：用于弯曲来自原料的通道字母的返回的通道字母弯曲机包括沿着待弯曲的原料的行进路径设置的进料单元，用于供给料料;一个用于沿着坯料的一个边缘形成凸缘的凸缘单元，用于沿着行进路径切割由进给机构供给的坯料的凸缘的切口单元，以及用于在计算机控制系统的控制下将库存弯曲成用于通道字母形状的期望配置的弯曲单元，其中，开槽单元和凸缘单元设置在弯曲单元的上游，并且凸缘单元设置在开槽单元的上游。

7. 发明授权

US6165884A Method of forming gate electrode in semiconductor device 有权
标题翻译：在半导体器件中形成栅电极的方法
公开(公告)号：US6165884A
公开(公告)日：2000-12-26
申请号：US457162
申请日：1999-12-08
申请人： Sang Moo Lee , Hyeon Soo Kim , In Seok Yeo
发明人： Sang Moo Lee , Hyeon Soo Kim , In Seok Yeo
IPC分类号： H01L29/78 , H01L21/28 , H01L21/336 , H01L21/3205
CPC分类号： H01L21/28052
摘要： A method of forming a gate electrode in a semiconductor device which can easily perform etching process for forming the gate electrode and reduce the resistivity of a gate electrode, is disclosed. In the present invention, a gate oxide layer, an amorphous silicon layer and a tungsten silicide layer are sequentially formed on a semiconductor substrate. A mask oxide pattern is then formed on the tungsten silicide layer in the shape of a gate electrode. Next, the tungsten silicide layer and the amorphous silicon layer are etched using the mask oxide pattern as an etch mask, to form a gate electrode. Thereafter, the amorphous silicon layer and the tungsten silicide layer of the gate electrode are thermal-treated by RTP spike annealing and an oxide layer is then formed on the side wall of the gate electrode. According to the present invention, by reducing resistivity of a tungsten silicide layer, it is possible to apply a conventional gate electrode material to high integration device over 1GDRAM, thereby lowering cost to develop a new gate electrode material. Furthermore, etching process for forming a gate electrode is easily performed when using the tungsten silicide layer as the gate electrode material, thereby obtaining uniform gate electrode. As a result, the reliability of a device is improved.
摘要翻译：公开了一种在半导体器件中形成栅电极的方法，其可以容易地进行用于形成栅电极的蚀刻工艺并降低栅电极的电阻率。在本发明中，在半导体衬底上依次形成栅极氧化层，非晶硅层和硅化钨层。然后在栅电极形状的硅化钨层上形成掩模氧化物图案。接下来，使用掩模氧化物图案作为蚀刻掩模来蚀刻硅化钨层和非晶硅层，以形成栅电极。此后，通过RTP尖峰退火对栅电极的非晶硅层和硅化钨层进行热处理，然后在栅电极的侧壁上形成氧化物层。根据本发明，通过降低硅化钨层的电阻率，可以将传统的栅极电极材料应用于超过1GDRAM的高集成度器件，从而降低开发新的栅电极材料的成本。此外，当使用硅化钨层作为栅电极材料时，容易进行用于形成栅电极的蚀刻工艺，从而获得均匀的栅电极。结果，提高了设备的可靠性。

8. 发明授权

US10730057B2 Magnetic strainer 有权
公开(公告)号：US10730057B2
公开(公告)日：2020-08-04
申请号：US16253573
申请日：2019-01-22
申请人： Sang Moo Lee , Dae Ho Park
发明人： Sang Moo Lee , Dae Ho Park
IPC分类号： B03C1/031 , E03B7/07 , B01D35/02
摘要： The present invention relates to a magnetic strainer that is configured to have a cap disposed in a filter insertion hole formed on the center of a branch pipe having an inlet and an outlet coupled to a pipe and to have upper and lower magnets arranged with repulsive forces, while placing a repulsive space therebetween, in such a manner as to be accommodated in both ends of a magnet case in a longitudinal direction of the magnet case to allow conductors in impurities to be easily collected to the inside of a filtering screen disposed between the filter insertion hole and the cap to filter the impurities, so that if ascending and descending means disposed under the magnet case operates, the upper magnet is descended to the repulsive space to easily remove the conductors collected on the top end surface of the magnet case.

9. 发明申请

US20120103155A1 METHODS AND APPARATUS FOR CUTTING PROFILES 审中-公开
标题翻译：切割轮廓的方法和设备
公开(公告)号：US20120103155A1
公开(公告)日：2012-05-03
申请号：US13133135
申请日：2008-10-10
申请人： Sang Moo Lee
发明人： Sang Moo Lee
IPC分类号： B26F1/08 , B26D7/01
CPC分类号： B26D7/01 , B21D11/08 , B21D11/10 , B21D28/02 , B21D28/12 , B21D28/243 , B21D35/00 , B26F1/20 , Y10T83/727 , Y10T83/731
摘要： A device, comprising: a base plate configured to be moveable toward and back from a metal rule having at least one flanged side, wherein the metal rule is fed into the device along a metal rule feeding path; a first plate coupled to the base plate, the first plate including a plurality of cutter holes formed on its surface; a plurality of cutting elements configured to engage the corresponding plurality of cutter holes on the first plate to make cuts on the at least one flanged side of the metal rule.
摘要翻译：一种装置，包括：基板，被配置为能够从具有至少一个法兰侧的金属规则向后运动，其中所述金属规则沿着金属规则馈送路径被馈送到所述装置中; 耦合到所述基板的第一板，所述第一板包括在其表面上形成的多个切割孔; 多个切割元件，其构造成与所述第一板上的对应的多个切割孔接合，以在所述金属规则的所述至少一个带凸缘的侧面上进行切割。

10. 发明申请

US20120103050A1 METHODS AND APPARATUS FOR CUTTING PROFILES 审中-公开
标题翻译：切割轮廓的方法和设备
公开(公告)号：US20120103050A1
公开(公告)日：2012-05-03
申请号：US13133133
申请日：2008-11-04
申请人： Sang Moo Lee
发明人： Sang Moo Lee
IPC分类号： B21D31/00 , B26D3/00 , B23D17/00
CPC分类号： B23D15/002 , B21D11/08 , B21D28/02 , B21D28/243 , B23D23/00 , Y10T83/0524 , Y10T83/162 , Y10T83/8736
摘要： An apparatus for cutting a profile, including: a cutter configured to make cuts on the profile having a first surface and a second surface, and having at least one rib on the first surface, wherein the cuts are made on the first surface of the profile; a first drive unit to drive the cutter forward and backward to and from the first surface of the profile; and a second drive unit to drive the cutter up and down along the first surface of the profile.
摘要翻译：一种用于切割轮廓的设备，包括：切割器，其被配置为在所述轮廓上形成具有第一表面和第二表面的切口，并且在所述第一表面上具有至少一个肋，其中所述切口形成在所述轮廓的所述第一表面上 ; 第一驱动单元，用于向所述轮廓的第一表面向前和向后驱动所述切割器; 以及第二驱动单元，沿着轮廓的第一表面上下驱动刀具。

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