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1. 发明授权

US08383438B2 Method for fabricating InGaAIN light-emitting diodes with a metal substrate 有权
标题翻译：制造具有金属基板的InGaAIN发光二极管的方法
公开(公告)号：US08383438B2
公开(公告)日：2013-02-26
申请号：US13059140
申请日：2008-08-19
申请人： Chuanbing Xiong , Fengyi Jiang , Li Wang , Wenqing Fang , Guping Wang , Shaohua Zhang
发明人： Chuanbing Xiong , Fengyi Jiang , Li Wang , Wenqing Fang , Guping Wang , Shaohua Zhang
IPC分类号： H01L21/00 , H01L29/06
CPC分类号： H01L33/0079 , H01L33/007 , H01L33/382 , H01L33/44
摘要： One embodiment of the present invention provides a method for fabricating light-emitting diodes. The method includes etching grooves on a growth substrate, thereby creating mesas on the growth substrate. The method further includes fabricating on each of the mesas an indium gallium aluminum nitride (InGaAlN) multilayer structure which contains a p-type layer, a multi-quantum-well layer, and an n-type layer. In addition, the method includes depositing one or more metal substrate layers on top of the InGaAlN multilayer structure. Moreover, the method includes removing the growth substrate. Furthermore, the method includes creating electrodes on both sides of the InGaAlN multilayer structure, thereby resulting in a vertical-electrode configuration.
摘要翻译：本发明的一个实施例提供一种制造发光二极管的方法。该方法包括在生长衬底上蚀刻凹槽，从而在生长衬底上形成台面。该方法还包括在每个台面上制造包含p型层，多量子阱层和n型层的铟镓铝氮化物（InGaAlN）层叠结构。此外，该方法包括在InGaAlN多层结构的顶部上沉积一个或多个金属衬底层。此外，该方法包括去除生长衬底。此外，该方法包括在InGaAlN多层结构的两侧形成电极，从而形成垂直电极结构。

2. 发明申请

US20110140080A1 METHOD FOR FABRICATING InGaAIN LIGHT-EMITTING DIODES WITH A METAL SUBSTRATE 有权
标题翻译：用金属基材制造金属发光二极管的方法
公开(公告)号：US20110140080A1
公开(公告)日：2011-06-16
申请号：US13059140
申请日：2008-08-19
申请人： Chuanbing Xiong , Fengyi Jiang , Li Wang , Wenqing Fang , Guping Wang , Shaohua Zhang
发明人： Chuanbing Xiong , Fengyi Jiang , Li Wang , Wenqing Fang , Guping Wang , Shaohua Zhang
IPC分类号： H01L33/06 , H01L33/58 , B82Y99/00 , B82Y40/00
CPC分类号： H01L33/0079 , H01L33/007 , H01L33/382 , H01L33/44
摘要： One embodiment of the present invention provides a method for fabricating light-emitting diodes. The method includes etching grooves on a growth substrate, thereby creating mesas on the growth substrate. The method further includes fabricating on each of the mesas an indium gallium aluminum nitride (InGaAlN) multilayer structure which contains a p-type layer, a multi-quantum-well layer, and an n-type layer. In addition, the method includes depositing one or more metal substrate layers on top of the InGaAlN multilayer structure. Moreover, the method includes removing the growth substrate. Furthermore, the method includes creating electrodes on both sides of the InGaAlN multilayer structure, thereby resulting in a vertical-electrode configuration.
摘要翻译：本发明的一个实施例提供一种制造发光二极管的方法。该方法包括在生长衬底上蚀刻凹槽，从而在生长衬底上形成台面。该方法还包括在每个台面上制造包含p型层，多量子阱层和n型层的铟镓铝氮化物（InGaAlN）多层结构。此外，该方法包括在InGaAlN多层结构的顶部上沉积一个或多个金属衬底层。此外，该方法包括去除生长衬底。此外，该方法包括在InGaAlN多层结构的两侧形成电极，从而形成垂直电极结构。

3. 发明授权

US08435816B2 Method for fabricating InGaAlN light emitting device on a combined substrate 有权
标题翻译：在组合衬底上制造InGaAlN发光器件的方法
公开(公告)号：US08435816B2
公开(公告)日：2013-05-07
申请号：US13059213
申请日：2008-08-22
申请人： Chuanbing Xiong , Fengyi Jiang , Li Wang , Shaohua Zhang , Guping Wang , Guangxu Wang
发明人： Chuanbing Xiong , Fengyi Jiang , Li Wang , Shaohua Zhang , Guping Wang , Guangxu Wang
IPC分类号： H01L21/00 , H01L21/44 , H01L21/36 , H01L21/20
CPC分类号： H01L21/0237 , H01L21/02439 , H01L21/02505 , H01L21/0254 , H01L33/0079 , H01L33/0095 , H01L33/44
摘要： One embodiment of the present invention provides a method for fabricating an InGaAlN light-emitting semiconductor structure. During the fabrication process, at least one single-crystal sacrificial layer is deposited on the surface of a base substrate to form a combined substrate, wherein the single-crystal sacrificial layer is lattice-matched with InGaAlN, and wherein the single crystal layer forms a sacrificial layer. Next, the InGaAlN light-emitting semiconductor structure is fabricated on the combined substrate. The InGaAlN structure fabricated on the combined substrate is then transferred to a support substrate, thereby facilitating a vertical electrode configuration. Transferring the InGaAlN structure involves etching the single-crystal sacrificial layer with a chemical etchant. Furthermore, the InGaAlN and the base substrate are resistant to the chemical etchant. The base substrate can be reused after the InGaAlN structure is transferred.
摘要翻译：本发明的一个实施例提供一种制造InGaAlN发光半导体结构的方法。在制造过程中，至少一个单晶牺牲层沉积在基底表面上以形成组合衬底，其中单晶牺牲层与InGaAlN晶格匹配，并且其中单晶层形成牺牲层。接下来，在组合衬底上制造InGaAlN发光半导体结构。然后将在组合衬底上制造的InGaAlN结构转移到支撑衬底，从而有助于垂直电极构型。转移InGaAlN结构包括用化学蚀刻剂蚀刻单晶牺牲层。此外，InGaAlN和基底对化学蚀刻剂具有耐受性。在传输InGaAlN结构后，可以重新使用基底。

4. 发明申请

US20110143467A1 METHOD FOR FABRICATING INGAAIN LIGHT EMITTING DEVICE ON A COMBINED SUBSTRATE 有权
标题翻译：在组合基板上制造发光装置的方法
公开(公告)号：US20110143467A1
公开(公告)日：2011-06-16
申请号：US13059213
申请日：2008-08-22
申请人： Chuanbing Xiong , Fengyi Jiang , Li Wang , Shaohua Zhang , Guping Wang , Guangxu Wang
发明人： Chuanbing Xiong , Fengyi Jiang , Li Wang , Shaohua Zhang , Guping Wang , Guangxu Wang
IPC分类号： H01L33/06 , H01L33/30 , H01L33/60
CPC分类号： H01L21/0237 , H01L21/02439 , H01L21/02505 , H01L21/0254 , H01L33/0079 , H01L33/0095 , H01L33/44
摘要： One embodiment of the present invention provides a method for fabricating an InGaAlN light-emitting semiconductor structure. During the fabrication process, at least one single-crystal sacrificial layer is deposited on the surface of a base substrate to form a combined substrate, wherein the single-crystal sacrificial layer is lattice-matched with InGaAlN, and wherein the single crystal layer forms a sacrificial layer. Next, the InGaAlN light-emitting semiconductor structure is fabricated on the combined substrate. The InGaAlN structure fabricated on the combined substrate is then transferred to a support substrate, thereby facilitating a vertical electrode configuration. Transferring the InGaAlN structure involves etching the single-crystal sacrificial layer with a chemical etchant. Furthermore, the InGaAlN and the base substrate are resistant to the chemical etchant. The base substrate can be reused after the InGaAlN structure is transferred.
摘要翻译：本发明的一个实施例提供一种制造InGaAlN发光半导体结构的方法。在制造过程中，至少一个单晶牺牲层沉积在基底表面上以形成组合衬底，其中单晶牺牲层与InGaAlN晶格匹配，其中单晶层形成牺牲层。接下来，在组合衬底上制造InGaAlN发光半导体结构。然后将在组合衬底上制造的InGaAlN结构转移到支撑衬底，从而有助于垂直电极构型。转移InGaAlN结构包括用化学蚀刻剂蚀刻单晶牺牲层。此外，InGaAlN和基底对化学蚀刻剂具有耐受性。在传输InGaAlN结构后，可以重新使用基底。

5. 发明申请

US20110113124A1 METHOD AND DEVICE FOR DOWNLOADING MULTIMEDIA CONTENTS AT HIGH SPEED IN THE INTERNET 审中-公开
标题翻译：用于在互联网上高速下载多媒体内容的方法和装置
公开(公告)号：US20110113124A1
公开(公告)日：2011-05-12
申请号：US13000610
申请日：2009-06-23
申请人： Shaohua Zhang
发明人： Shaohua Zhang
IPC分类号： G06F15/16
CPC分类号： H04L67/06 , G06F16/48 , G06F16/955 , G06F16/958 , H04L67/104 , H04L67/1063
摘要： In order to download multimedia content with hidden address information on the Internet to the user terminal, the invention proposes obtaining address information of the multimedia contents to be downloaded with hidden address information in the predetermined multimedia server, when a multimedia player of the user terminal obtains the multimedia contents to be downloaded from the predetermined multimedia server, and obtaining information related to a plurality of network resources comprising the same multimedia contents as the multimedia contents to be downloaded, according to the address information of the multimedia contents to be downloaded in the predetermined multimedia server, then downloading the multimedia contents to be downloaded, according to the information related to the plurality of network resources.
摘要翻译：为了将在Internet上的隐藏地址信息的多媒体内容下载到用户终端，本发明在用户终端的多媒体播放器获得的情况下，提出在预定的多媒体服务器中获取要隐藏的地址信息下载的多媒体内容的地址信息从预定的多媒体服务器下载多媒体内容，根据要预定的多媒体内容的地址信息，获取与要下载的多媒体内容相同的多媒体内容的多个网络资源相关的信息多媒体服务器，然后根据与多个网络资源相关的信息下载要下载的多媒体内容。

6. 发明申请

US20130102605A1 INHIBITORS OF AKT ACTIVITY 审中-公开
标题翻译： AKT活动的抑制剂
公开(公告)号：US20130102605A1
公开(公告)日：2013-04-25
申请号：US13642958
申请日：2011-04-21
申请人： Peng Liang , Morihiro Mitsuya , Yoshio Ogino , Changhe Qi , Hidekazu Takahashi , Paul Tempest , Jiabing Wang , Yuguang Wang , Zhenzhen Wang , Shaohua Zhang , Nanyan Zhou , Jiuxiang Zhu
发明人： Peng Liang , Morihiro Mitsuya , Yoshio Ogino , Changhe Qi , Hidekazu Takahashi , Paul Tempest , Jiabing Wang , Yuguang Wang , Zhenzhen Wang , Shaohua Zhang , Nanyan Zhou , Jiuxiang Zhu
IPC分类号： C07D417/04 , C07D417/14
CPC分类号： C07D417/04 , C07D277/28 , C07D417/14 , C07D487/08
摘要： The instant invention provides for substituted thiazoles that inhibit Akt activity. In particular, the compounds disclosed selectively inhibit one or two of the Akt isoforms. The invention also provides for compositions comprising such inhibitory compounds and methods of inhibiting Akt activity by administering the compound to a patient in need of treatment of cancer.
摘要翻译：本发明提供抑制Akt活性的取代的噻唑。特别地，所公开的化合物选择性地抑制一种或两种Akt同种型。本发明还提供了包含这种抑制化合物的组合物和通过将该化合物给予需要治疗癌症的患者来抑制Akt活性的方法。

7. 发明授权

US10786090B2 Mattress for evenly gathering and dispersing human body gravity 有权
公开(公告)号：US10786090B2
公开(公告)日：2020-09-29
申请号：US14960382
申请日：2015-12-06
申请人： Shaohua Zhang
发明人： Shaohua Zhang
IPC分类号： A47C27/08 , A47C27/05
摘要： A mattress for evenly gathering and dispersing human body gravity comprises elastic surface layer connecting cloth (1), elastic support frames (2), lateral connecting cloth (3), a filling region (4), granular fillers (5), a filler inlet/outlet (6), lower connecting cloth (7), a foot limiting belt (8), a leg limiting belt (9), hip limiting belts (10) and a back limiting belt (11) (“limiting belts” for short). The width of each of the limiting belts (8, 9, 10, 11) is less than that of the filling region. Upper ends and lower ends of the limiting belts (8, 9, 10, 11) are separately connected to an upper cloth layer and a lower cloth layer. When the mattress is stressed by human body gravity, the granular fillers automatically move towards a gravity-free region and fill a gap between the human body and the mattress, so as to provide a larger balanced stress surface for the human body and realize balancing of the human body gravity. The mattress is self-adaptive to a posture of lying on the side or lying on the back, so that no pillow is required. The mattress has functions of improving blood circulation and relieving fatigue of joints and muscles, and can avoid discomfort due to uneven stress. The mattress is partitioned into one or more independent filling regions by lateral upright partitioning cloth (12), so that the mattress can be used by one or more persons.

8. 发明申请

US20160081488A1 MATTRESS FOR EVENLY GATHERING AND DISPERSING HUMAN BODY GRAVITY 审中-公开
标题翻译：即时收集和分散人体体重
公开(公告)号：US20160081488A1
公开(公告)日：2016-03-24
申请号：US14960382
申请日：2015-12-06
申请人： Shaohua Zhang
发明人： Shaohua Zhang
IPC分类号： A47C27/08
摘要： A mattress for evenly gathering and dispersing human body gravity comprises elastic surface layer connecting cloth (1), elastic support frames (2), lateral connecting cloth (3), a filling region (4), granular fillers (5), a filler inlet/outlet (6), lower connecting cloth (7), a foot limiting belt (8), a leg limiting belt (9), hip limiting belts (10) and a back limiting belt (11) (“limiting belts” for short). The width of each of the limiting belts (8, 9, 10, 11) is less than that of the filling region. Upper ends and lower ends of the limiting belts (8, 9, 10, 11) are separately connected to an upper cloth layer and a lower cloth layer. When the mattress is stressed by human body gravity, the granular fillers automatically move towards a gravity-free region and fill a gap between the human body and the mattress, so as to provide a larger balanced stress surface for the human body and realize balancing of the human body gravity. The mattress is self-adaptive to a posture of lying on the side or lying on the back, so that no pillow is required. The mattress has functions of improving blood circulation and relieving fatigue of joints and muscles, and can avoid discomfort due to uneven stress. The mattress is partitioned into one or more independent filling regions by lateral upright partitioning cloth (12), so that the mattress can be used by one or more persons.
摘要翻译：用于均匀聚集和分散人体重力的床垫包括弹性表面层连接布（1），弹性支撑框架（2），横向连接布（3），填充区域（4），颗粒填料（5），填料入口（6），下连接布（7），脚踏限制带（8），腿限制带（9），臀部限制带（10）和后挡板（11）（简称“限带” ）。每个限制带（8,9,10,11）的宽度小于填充区域的宽度。限位带（8,9,10,11）的上端和下端分别连接到上布层和下布层。当床垫受到人体重力的压力时，颗粒状填料自动移动到无重力区域，填充人体和床垫之间的间隙，为人体提供更大的平衡应力面，实现平衡人体重力。床垫自适应于躺在侧面或躺在背部的姿势，所以不需要枕头。床垫具有改善血液循环，减轻关节和肌肉疲劳的功能，可避免由于应力不均匀引起的不适。通过横向立式分隔布（12）将床垫分隔成一个或多个独立的填充区域，使得床垫可以被一个或多个人使用。

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