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1. 发明申请

US20100270551A1 BOTTOM GATE THIN FILM TRANSISTOR AND ACTIVE ARRAY SUBSTRATE 有权
标题翻译：底部薄膜薄膜晶体管和主动阵列基板
公开(公告)号：US20100270551A1
公开(公告)日：2010-10-28
申请号：US12500609
申请日：2009-07-10
申请人： Chuan-Sheng Wei , Guang-Ren Shen , Chang-Yu Huang , Pei-Ming Chen , Sheng-Chao Liu , Chun-Hsiun Chen , Wei-Ming Huang
发明人： Chuan-Sheng Wei , Guang-Ren Shen , Chang-Yu Huang , Pei-Ming Chen , Sheng-Chao Liu , Chun-Hsiun Chen , Wei-Ming Huang
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L29/42384 , H01L29/41733 , H01L29/66765
摘要： A bottom gate thin film transistor and an active array substrate are provided. The bottom gate thin film transistor includes a gate, a gate insulation layer, a semiconductor layer, a plurality of sources and a plurality of drains. The gate insulation layer is disposed on the gate. The semiconductor layer is disposed on the gate insulation layer and located above the gate. An area ratio of the semiconductor layer and the gate is about 0.001 to 0.9. The sources are electrically connected with each other, and the drains are electrically connected with each other.
摘要翻译：提供底栅薄膜晶体管和有源阵列基板。底栅薄膜晶体管包括栅极，栅极绝缘层，半导体层，多个源极和多个漏极。栅极绝缘层设置在栅极上。半导体层设置在栅极绝缘层上并位于栅极上方。半导体层和栅极的面积比约为0.001〜0.9。源极彼此电连接，并且漏极彼此电连接。

2. 发明授权

US08154061B2 Bottom gate thin film transistor and active array substrate 有权
标题翻译：底栅薄膜晶体管和有源阵列衬底
公开(公告)号：US08154061B2
公开(公告)日：2012-04-10
申请号：US12500609
申请日：2009-07-10
申请人： Chuan-Sheng Wei , Guang-Ren Shen , Chang-Yu Huang , Pei-Ming Chen , Sheng-Chao Liu , Chun-Hsiun Chen , Wei-Ming Huang
发明人： Chuan-Sheng Wei , Guang-Ren Shen , Chang-Yu Huang , Pei-Ming Chen , Sheng-Chao Liu , Chun-Hsiun Chen , Wei-Ming Huang
IPC分类号： H01L31/062
CPC分类号： H01L29/42384 , H01L29/41733 , H01L29/66765
摘要： A bottom gate thin film transistor and an active array substrate are provided. The bottom gate thin film transistor includes a gate, a gate insulation layer, a semiconductor layer, a plurality of sources and a plurality of drains. The gate insulation layer is disposed on the gate. The semiconductor layer is disposed on the gate insulation layer and located above the gate. An area ratio of the semiconductor layer and the gate is about 0.001 to 0.9. The sources are electrically connected with each other, and the drains are electrically connected with each other.
摘要翻译：提供底栅薄膜晶体管和有源阵列基板。底栅薄膜晶体管包括栅极，栅极绝缘层，半导体层，多个源极和多个漏极。栅极绝缘层设置在栅极上。半导体层设置在栅极绝缘层上并位于栅极上方。半导体层和栅极的面积比约为0.001〜0.9。源极彼此电连接，并且漏极彼此电连接。

3. 发明申请

US20110141086A1 ELECTROPHORETIC DISPLAY AND METHOD OF DRIVING THE SAME 有权
标题翻译：电泳显示器及其驱动方法
公开(公告)号：US20110141086A1
公开(公告)日：2011-06-16
申请号：US12775443
申请日：2010-05-06
申请人： Chang-Yu Huang , Chuan-Sheng Wei , Pei-Ming Chen , Chun-Hsiun Chen , Wei-Ming Huang
发明人： Chang-Yu Huang , Chuan-Sheng Wei , Pei-Ming Chen , Chun-Hsiun Chen , Wei-Ming Huang
IPC分类号： G06F3/038 , G09G3/34
CPC分类号： G09G3/344 , G09G2300/08 , G09G2310/0267
摘要： An electrophoretic display with threshold voltage drift compensation functionality includes a gate driving circuit, a data driving circuit, a controller and a pixel array. The gate driving circuit provides plural gate signals according to a scan control signal. The data driving circuit provides plural data signals according to a data control signal. The controller is employed to provide the scan control signal and the data control signal. The pixel array is utilized for displaying images according to the gate signals and the data signals. Each of the gate signals includes a writing enable pulse for enabling write operations of the data signals during a writing period. And during a compensation period, each of the gate signals includes a compensation pulse for performing threshold voltage drift compensation operations on the data switches of the pixel array, and the data signals are set to hold a common voltage.
摘要翻译：具有阈值电压漂移补偿功能的电泳显示器包括栅极驱动电路，数据驱动电路，控制器和像素阵列。门驱动电路根据扫描控制信号提供多个门信号。数据驱动电路根据数据控制信号提供多个数据信号。控制器用于提供扫描控制信号和数据控制信号。像素阵列用于根据门信号和数据信号显示图像。每个门信号包括写使能脉冲，用于在写入周期期间实现数据信号的写操作。并且在补偿期间，每个门信号包括用于对像素阵列的数据开关执行阈值电压漂移补偿操作的补偿脉冲，并且数据信号被设置为保持公共电压。

4. 发明授权

US08564584B2 Electrophoretic display and method of driving the same 有权
标题翻译：电泳显示及其驱动方法
公开(公告)号：US08564584B2
公开(公告)日：2013-10-22
申请号：US12775443
申请日：2010-05-06
申请人： Chang-Yu Huang , Chuan-Sheng Wei , Pei-Ming Chen , Chun-Hsiun Chen , Wei-Ming Huang
发明人： Chang-Yu Huang , Chuan-Sheng Wei , Pei-Ming Chen , Chun-Hsiun Chen , Wei-Ming Huang
IPC分类号： G06F3/038
CPC分类号： G09G3/344 , G09G2300/08 , G09G2310/0267
摘要： An electrophoretic display with threshold voltage drift compensation functionality includes a gate driving circuit, a data driving circuit, a controller and a pixel array. The gate driving circuit provides plural gate signals according to a scan control signal. The data driving circuit provides plural data signals according to a data control signal. The controller is employed to provide the scan control signal and the data control signal. The pixel array is utilized for displaying images according to the gate signals and the data signals. Each of the gate signals includes a writing enable pulse for enabling write operations of the data signals during a writing period. And during a compensation period, each of the gate signals includes a compensation pulse for performing threshold voltage drift compensation operations on the data switches of the pixel array, and the data signals are set to hold a common voltage.
摘要翻译：具有阈值电压漂移补偿功能的电泳显示器包括栅极驱动电路，数据驱动电路，控制器和像素阵列。门驱动电路根据扫描控制信号提供多个门信号。数据驱动电路根据数据控制信号提供多个数据信号。控制器用于提供扫描控制信号和数据控制信号。像素阵列用于根据门信号和数据信号显示图像。每个门信号包括写使能脉冲，用于在写入周期期间实现数据信号的写操作。并且在补偿期间，每个门信号包括用于对像素阵列的数据开关执行阈值电压漂移补偿操作的补偿脉冲，并且数据信号被设置为保持公共电压。

5. 发明申请

US20120241743A1 THIN FILM TRANSISTOR 审中-公开
标题翻译：薄膜晶体管
公开(公告)号：US20120241743A1
公开(公告)日：2012-09-27
申请号：US13489458
申请日：2012-06-06
申请人： Guang-Ren Shen , Pei-Ming Chen , Chun-Hsiun Chen , Wei-Ming Huang
发明人： Guang-Ren Shen , Pei-Ming Chen , Chun-Hsiun Chen , Wei-Ming Huang
IPC分类号： H01L29/786
CPC分类号： H01L29/786
摘要： A thin film transistor (TFT) and a fabricating method thereof are provided. The TFT includes a channel layer, an ohmic contact layer, a dielectric layer, a source, a drain, a gate, and a gate insulating layer. The channel layer has an upper surface and a sidewall. The ohmic contact layer is disposed on a portion of the upper surface of the channel layer. The dielectric layer is disposed on the sidewall of the channel layer, and does not overlap with the ohmic contact layer. The source and the drain are disposed on portions of the ohmic contact layer and the dielectric layer. A portion of dielectric layer is not covered by the source or the drain. The gate is above or below the channel layer. The gate insulating layer is disposed between the gate and the channel layer.
摘要翻译：提供薄膜晶体管（TFT）及其制造方法。 TFT包括沟道层，欧姆接触层，电介质层，源极，漏极，栅极和栅极绝缘层。沟道层具有上表面和侧壁。欧姆接触层设置在沟道层的上表面的一部分上。电介质层设置在沟道层的侧壁上，并且不与欧姆接触层重叠。源极和漏极设置在欧姆接触层和电介质层的部分上。电介质层的一部分不被源极或漏极覆盖。门在通道层的上方或下方。栅极绝缘层设置在栅极和沟道层之间。

6. 发明授权

US08232147B2 Fabricating method of a thin film transistor having a dielectric layer for inhibiting leakage current 有权
标题翻译：具有用于抑制漏电流的电介质层的薄膜晶体管的制造方法
公开(公告)号：US08232147B2
公开(公告)日：2012-07-31
申请号：US12779955
申请日：2010-05-14
申请人： Guang-Ren Shen , Pei-Ming Chen , Chun-Hsiun Chen , Wei-Ming Huang
发明人： Guang-Ren Shen , Pei-Ming Chen , Chun-Hsiun Chen , Wei-Ming Huang
IPC分类号： H01L29/786
CPC分类号： H01L29/786
摘要： A thin film transistor (TFT) and a fabricating method thereof are provided. The TFT includes a channel layer, an ohmic contact layer, a dielectric layer, a source, a drain, a gate, and a gate insulating layer. The channel layer has an upper surface and a sidewall. The ohmic contact layer is disposed on a portion of the upper surface of the channel layer. The dielectric layer is disposed on the sidewall of the channel layer, and does not overlap with the ohmic contact layer. The source and the drain are disposed on portions of the ohmic contact layer and the dielectric layer. A portion of dielectric layer is not covered by the source or the drain. The gate is above or below the channel layer. The gate insulating layer is disposed between the gate and the channel layer.
摘要翻译：提供薄膜晶体管（TFT）及其制造方法。 TFT包括沟道层，欧姆接触层，电介质层，源极，漏极，栅极和栅极绝缘层。沟道层具有上表面和侧壁。欧姆接触层设置在沟道层的上表面的一部分上。电介质层设置在沟道层的侧壁上，并且不与欧姆接触层重叠。源极和漏极设置在欧姆接触层和电介质层的部分上。电介质层的一部分不被源极或漏极覆盖。门在通道层的上方或下方。栅极绝缘层设置在栅极和沟道层之间。

7. 发明申请

US20110215324A1 THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20110215324A1
公开(公告)日：2011-09-08
申请号：US12779955
申请日：2010-05-14
申请人： Guang-Ren Shen , Pei-Ming Chen , Chun-Hsiun Chen , Wei-Ming Huang
发明人： Guang-Ren Shen , Pei-Ming Chen , Chun-Hsiun Chen , Wei-Ming Huang
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/786
摘要： A thin film transistor (TFT) and a fabricating method thereof are provided. The TFT includes a channel layer, an ohmic contact layer, a dielectric layer, a source, a drain, a gate, and a gate insulating layer. The channel layer has an upper surface and a sidewall. The ohmic contact layer is disposed on a portion of the upper surface of the channel layer. The dielectric layer is disposed on the sidewall of the channel layer, and does not overlap with the ohmic contact layer. The source and the drain are disposed on portions of the ohmic contact layer and the dielectric layer. A portion of dielectric layer is not covered by the source or the drain. The gate is above or below the channel layer. The gate insulating layer is disposed between the gate and the channel layer.
摘要翻译：提供薄膜晶体管（TFT）及其制造方法。 TFT包括沟道层，欧姆接触层，电介质层，源极，漏极，栅极和栅极绝缘层。沟道层具有上表面和侧壁。欧姆接触层设置在沟道层的上表面的一部分上。电介质层设置在沟道层的侧壁上，并且不与欧姆接触层重叠。源极和漏极设置在欧姆接触层和电介质层的部分上。电介质层的一部分不被源极或漏极覆盖。门在通道层的上方或下方。栅极绝缘层设置在栅极和沟道层之间。

8. 发明申请

US20110116157A1 ELECTROPHORESIS DISPLAY PANEL 有权
公开(公告)号：US20110116157A1
公开(公告)日：2011-05-19
申请号：US12699835
申请日：2010-02-03
申请人： Chuan-Sheng Wei , Sheng-Wen Huang , Pei-Ming Chen , Chun-Hsiun Chen , Wei-Ming Huang
发明人： Chuan-Sheng Wei , Sheng-Wen Huang , Pei-Ming Chen , Chun-Hsiun Chen , Wei-Ming Huang
IPC分类号： G02F1/167
CPC分类号： G02F1/167 , G02F1/1362 , G02F2001/1672
摘要： An electrophoresis display panel including an active device array substrate and an electrophoresis display film is provided. The active device array substrate includes a plurality of active devices and a shielding pattern. The electrophoresis display film is disposed on the active device array substrate. The electrophoresis display film includes a conductive layer, a dielectric layer and a plurality of electrophoresis display mediums. The dielectric layer is disposed on the conductive layer and has a plurality of micro-cups arranged in area array. The dielectric layer is between the conductive layer and the active device array substrate. Light passing through the dielectric layer is prevented from irradiating onto the active devices by the shielding pattern. In addition, the electrophoresis display mediums are filled within the micro-cups, respectively.

9. 发明授权

US07969642B2 Electrophoresis display panel 有权
标题翻译：电泳显示面板
公开(公告)号：US07969642B2
公开(公告)日：2011-06-28
申请号：US12699835
申请日：2010-02-03
申请人： Chuan-Sheng Wei , Sheng-Wen Huang , Pei-Ming Chen , Chun-Hsiun Chen , Wei-Ming Huang
发明人： Chuan-Sheng Wei , Sheng-Wen Huang , Pei-Ming Chen , Chun-Hsiun Chen , Wei-Ming Huang
IPC分类号： G02B26/00
CPC分类号： G02F1/167 , G02F1/1362 , G02F2001/1672
摘要： An electrophoresis display panel including an active device array substrate and an electrophoresis display film is provided. The active device array substrate includes a plurality of active devices and a shielding pattern. The electrophoresis display film is disposed on the active device array substrate. The electrophoresis display film includes a conductive layer, a dielectric layer and a plurality of electrophoresis display mediums. The dielectric layer is disposed on the conductive layer and has a plurality of micro-cups arranged in area array. The dielectric layer is between the conductive layer and the active device array substrate. Light passing through the dielectric layer is prevented from irradiating onto the active devices by the shielding pattern. In addition, the electrophoresis display mediums are filled within the micro-cups, respectively.
摘要翻译：提供了包括有源器件阵列基板和电泳显示膜的电泳显示面板。有源器件阵列衬底包括多个有源器件和屏蔽图案。电泳显示膜配置在有源器件阵列基板上。电泳显示膜包括导电层，电介质层和多个电泳显示介质。电介质层设置在导电层上，并具有以阵列排列的多个微型杯。电介质层位于导电层和有源器件阵列衬底之间。防止穿过电介质层的光通过屏蔽图案照射到有源器件上。此外，电泳显示介质分别填充在微型杯内。

10. 发明授权

US08233213B2 Electrophoresis display panel 有权
标题翻译：电泳显示面板
公开(公告)号：US08233213B2
公开(公告)日：2012-07-31
申请号：US13110003
申请日：2011-05-18
申请人： Chuan-Sheng Wei , Sheng-Wen Huang , Pei-Ming Chen , Chun-Hsiun Chen , Wei-Ming Huang
发明人： Chuan-Sheng Wei , Sheng-Wen Huang , Pei-Ming Chen , Chun-Hsiun Chen , Wei-Ming Huang
IPC分类号： G02B26/00 , G09G3/34
CPC分类号： G02F1/167 , G02F1/1362 , G02F2001/1672
摘要： An electrophoresis display panel including an active device array substrate and an electrophoresis display film is provided. The active device array substrate includes a plurality of active devices and a shielding pattern. The electrophoresis display film is disposed on the active device array substrate. The electrophoresis display film includes a conductive layer, a dielectric layer and a plurality of electrophoresis display mediums. The dielectric layer is disposed on the conductive layer and has a plurality of micro-cups arranged in area array. The dielectric layer is between the conductive layer and the active device array substrate. Light passing through the dielectric layer is prevented from irradiating onto the active devices by the shielding pattern. In addition, the electrophoresis display mediums are filled within the micro-cups, respectively.
摘要翻译：提供了包括有源器件阵列基板和电泳显示膜的电泳显示面板。有源器件阵列衬底包括多个有源器件和屏蔽图案。电泳显示膜配置在有源器件阵列基板上。电泳显示膜包括导电层，电介质层和多个电泳显示介质。电介质层设置在导电层上，并具有以阵列排列的多个微型杯。电介质层位于导电层和有源器件阵列衬底之间。防止穿过电介质层的光通过屏蔽图案照射到有源器件上。此外，电泳显示介质分别填充在微型杯内。

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