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    • 4. 发明授权
    • Ultra-thin resist shallow trench process using high selectivity nitride etch
    • 使用高选择性氮化物蚀刻的超薄抗蚀剂浅沟槽工艺
    • US06740566B2
    • 2004-05-25
    • US09398641
    • 1999-09-17
    • Christopher F. LyonsScott A. BellHarry J. LevinsonKhanh B. NguyenFei WangChih Yuh Yang
    • Christopher F. LyonsScott A. BellHarry J. LevinsonKhanh B. NguyenFei WangChih Yuh Yang
    • H01L2176
    • H01L21/76224
    • In one embodiment, the present invention relates to a method of forming a shallow trench, involving the steps of providing a semiconductor substrate comprising a barrier oxide layer over at the semiconductor substrate and a nitride layer over the barrier oxide layer; depositing an ultra-thin photoresist over the nitride layer, the ultra-thin photoresist having a thickness of about 2,000 Å or less; patterning the ultra-thin photoresist to expose a portion of the nitride layer and to define a pattern for the shallow trench; etching the exposed portion of the nitride layer with an etchant having a nitride:photoresist selectivity of at least about 10:1 to expose a portion of the barrier oxide layer; etching the exposed portion of the barrier oxide layer to expose a portion of the semiconductor substrate; and etching the exposed portion of the semiconductor substrate to provide the shallow trench. In another embodiment, the method further involves depositing an insulating filler material into the shallow trench to provide a shallow trench isolation region.
    • 在一个实施例中,本发明涉及一种形成浅沟槽的方法,包括以下步骤:在半导体衬底上提供包括阻挡氧化物层的半导体衬底,以及在阻挡氧化物层上方的氮化物层; 在所述氮化物层上沉积超薄光致抗蚀剂,所述超薄光致抗蚀剂具有约2,000或更小的厚度; 图案化超薄光致抗蚀剂以暴露氮化物层的一部分并且限定用于浅沟槽的图案; 用具有至少约10:1的氮化物:光致抗蚀剂选择性的蚀刻剂蚀刻氮化物层的暴露部分以暴露部分阻挡氧化物层; 蚀刻阻挡氧化物层的暴露部分以暴露半导体衬底的一部分; 并蚀刻半导体衬底的暴露部分以提供浅沟槽。 在另一个实施例中,该方法还包括将绝缘填充材料沉积到浅沟槽中以提供浅沟槽隔离区域。
    • 9. 发明授权
    • Method using a thin resist mask for dual damascene stop layer etch
    • 使用薄抗蚀剂掩模的双镶嵌停止层蚀刻方法
    • US06184128B2
    • 2001-02-06
    • US09497222
    • 2000-01-31
    • Fei WangChristopher F. LyonsKhanh B. NguyenScott A. BellHarry J. LevinsonChih Yuh Yang
    • Fei WangChristopher F. LyonsKhanh B. NguyenScott A. BellHarry J. LevinsonChih Yuh Yang
    • H01L214763
    • H01L21/7681H01L21/31144
    • In one embodiment, the present invention relates to a dual damascene method involving the steps of providing a substrate having a first low k material layer; forming a first hard mask layer over the first low k material layer; patterning a first opening having a first width in the first hard mask layer using a first photoresist thereby exposing a portion of the first low k material layer; removing the first photoresist; depositing a second low k material layer over the patterned first hard mask layer and the exposed portion of the first low k material layer; forming a second hard mask layer over the second low k material layer; patterning a second opening having a width larger than the first width in the second hard mask layer using a second photoresist thereby exposing a portion of the second low k material layer; anisotropically etching the exposed portions of the first and second low k material layers; and removing the second photoresist, wherein and at least one of the first photoresist and the second photoresist have a thickness of about 1,500 Å or less.
    • 在一个实施例中,本发明涉及一种双镶嵌方法,包括以下步骤:提供具有第一低k材料层的基底; 在所述第一低k材料层上形成第一硬掩模层; 使用第一光致抗蚀剂构图在第一硬掩模层中具有第一宽度的第一开口,从而暴露第一低k材料层的一部分; 去除第一光致抗蚀剂; 在图案化的第一硬掩模层和第一低k材料层的暴露部分上沉积第二低k材料层; 在所述第二低k材料层上形成第二硬掩模层; 使用第二光致抗蚀剂构图在第二硬掩模层中形成具有大于第一宽度的宽度的第二开口,从而暴露第二低k材料层的一部分; 各向异性地蚀刻第一和第二低k材料层的暴露部分; 并且去除所述第二光致抗蚀剂,其中所述第一光致抗蚀剂和所述第二光致抗蚀剂中的至少一个具有大约等于或小于1500埃的厚度。