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1. 发明授权

US08357618B2 Frequency doubling using a photo-resist template mask 失效
标题翻译：使用光刻胶模板掩模倍频
公开(公告)号：US08357618B2
公开(公告)日：2013-01-22
申请号：US12257953
申请日：2008-10-24
申请人： Christopher Dennis Bencher , Huixiong Dai , Li Yan Miao , Hao Chen
发明人： Christopher Dennis Bencher , Huixiong Dai , Li Yan Miao , Hao Chen
IPC分类号： H01L21/31
CPC分类号： H01L21/3146 , H01L21/0337 , H01L21/0338
摘要： A method for doubling the frequency of a lithographic process using a photo-resist template mask is described. A device layer having a photo-resist layer formed thereon is first provided. The photo-resist layer is patterned to form a photo-resist template mask. A spacer-forming material layer is deposited over the photo-resist template mask. The spacer-forming material layer is etched to form a spacer mask and to expose the photo-resist template mask. The photo-resist template mask is then removed and an image of the spacer mask is finally transferred to the device layer.
摘要翻译：描述了使用光致抗蚀剂模板掩模使光刻工艺的频率加倍的方法。首先提供其上形成有光致抗蚀剂层的器件层。将光致抗蚀剂层图案化以形成光致抗蚀剂模板掩模。在光致抗蚀剂模板掩模上沉积间隔物形成材料层。蚀刻间隔物形成材料层以形成间隔物掩模并露出光刻胶模板掩模。然后去除光刻胶模板掩模，并且最终将间隔掩模的图像转移到器件层。

2. 发明申请

US20090111281A1 FREQUENCY DOUBLING USING A PHOTO-RESIST TEMPLATE MASK 失效
标题翻译：使用光敏模式屏幕进行频率重复
公开(公告)号：US20090111281A1
公开(公告)日：2009-04-30
申请号：US12257953
申请日：2008-10-24
申请人： Christopher Dennis Bencher , Huixiong Dai , Li Yan Miao , Hao Chen
发明人： Christopher Dennis Bencher , Huixiong Dai , Li Yan Miao , Hao Chen
IPC分类号： H01L21/31
CPC分类号： H01L21/3146 , H01L21/0337 , H01L21/0338
摘要： A method for doubling the frequency of a lithographic process using a photo-resist template mask is described. A device layer having a photo-resist layer formed thereon is first provided. The photo-resist layer is patterned to form a photo-resist template mask. A spacer-forming material layer is deposited over the photo-resist template mask. The spacer-forming material layer is etched to form a spacer mask and to expose the photo-resist template mask. The photo-resist template mask is then removed and an image of the spacer mask is finally transferred to the device layer.
摘要翻译：描述了使用光致抗蚀剂模板掩模使光刻工艺的频率加倍的方法。首先提供其上形成有光致抗蚀剂层的器件层。将光致抗蚀剂层图案化以形成光致抗蚀剂模板掩模。在光致抗蚀剂模板掩模上沉积间隔物形成材料层。蚀刻间隔物形成材料层以形成间隔物掩模并露出光刻胶模板掩模。然后去除光刻胶模板掩模，并且最终将间隔掩模的图像转移到器件层。

3. 发明授权

US08501395B2 Line edge roughness reduction and double patterning 失效
公开(公告)号：US08501395B2
公开(公告)日：2013-08-06
申请号：US12156770
申请日：2008-06-03
申请人： Huixiong Dai , Xumou Xu , Christopher S. Ngai
发明人： Huixiong Dai , Xumou Xu , Christopher S. Ngai
IPC分类号： G03F7/20
CPC分类号： H01L21/31144 , G03F7/2006 , G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338
摘要： Embodiments of the present invention relate to lithographic processes used in integrated circuit fabrication for improving line edge roughness (LER) and reduced critical dimensions (CD) for lines and/or trenches. Embodiments use the combinations of polarized light lithography, shrink coating processes, and double exposure processes to produce synergetic effects in the formation of trench structures having good resolution, reduced CDs, reduced pitch, and reduced LER in the lines and/or trenches of the patterned interconnect structures.

4. 发明申请

US20090142926A1 Line edge roughness reduction and double patterning 失效
标题翻译：线边缘粗糙度减少和双重图案化
公开(公告)号：US20090142926A1
公开(公告)日：2009-06-04
申请号：US12156770
申请日：2008-06-03
申请人： Huixiong Dai , Xumou Xu , Christopher S. Ngai
发明人： Huixiong Dai , Xumou Xu , Christopher S. Ngai
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , G03F7/2006 , G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338
摘要： Embodiments of the present invention relate to lithographic processes used in integrated circuit fabrication for improving line edge roughness (LER) and reduced critical dimensions (CD) for lines and/or trenches. Embodiments use the combinations of polarized light lithography, shrink coating processes, and double exposure processes to produce synergetic effects in the formation of trench structures having good resolution, reduced CDs, reduced pitch, and reduced LER in the lines and/or trenches of the patterned interconnect structures.
摘要翻译：本发明的实施例涉及用于集成电路制造中用于改善线边缘粗糙度（LER）和减小线和/或沟槽的临界尺寸（CD）的光刻工艺。实施例使用偏振光平版印刷术，收缩涂布工艺和双曝光工艺的组合，以在形成具有良好分辨率，降低的CD，降低的间距以及图案化的线和/或沟槽中的减小的LER的沟槽结构中产生协同效应互连结构。

5. 发明申请

US20090317628A1 METHODS AND APPARTUS TO PREVENT CONTAMINATION OF A PHOTORESIST LAYER ON A SUBSTRATE 审中-公开
标题翻译：防止基片上的光电陶瓷层污染的方法和装置
公开(公告)号：US20090317628A1
公开(公告)日：2009-12-24
申请号：US12176392
申请日：2008-07-20
申请人： Mehul Naik , Keisuke Mizuuchi , Huixiong Dai , Michael Armacost , Li-Qun Xia
发明人： Mehul Naik , Keisuke Mizuuchi , Huixiong Dai , Michael Armacost , Li-Qun Xia
IPC分类号： B32B9/00
CPC分类号： H01L21/31144 , H01L21/3105 , H01L21/76829 , Y10T428/261
摘要： In one aspect, a method is provided which includes (1) providing a substrate including a photoresist layer and an additional layer which may be a potential source of contaminants, and (2) preventing a release of contaminants from the additional layer, wherein preventing the release of contaminants from the additional layer protects the photoresist layer from exposure to contaminants from the additional layer. Numerous other aspects are provided.
摘要翻译：在一个方面，提供了一种方法，其包括（1）提供包括光致抗蚀剂层的基材和可能是潜在的污染源的附加层，和（2）防止污染物从附加层释放，其中防止污染物从附加层的释放保护光致抗蚀剂层免受来自附加层的污染物的侵害。提供了许多其他方面。

6. 发明申请

US20090104541A1 PLASMA SURFACE TREATMENT TO PREVENT PATTERN COLLAPSE IN IMMERSION LITHOGRAPHY 审中-公开
标题翻译：等离子体表面处理，以防止浸渍图中的图案褶皱
公开(公告)号：US20090104541A1
公开(公告)日：2009-04-23
申请号：US11877559
申请日：2007-10-23
申请人： Eui Kyoon Kim , Deenesh Padhi , Huixiong Dai , Mehul Naik , Martin Jay Seamons , Bok Hoen Kim
发明人： Eui Kyoon Kim , Deenesh Padhi , Huixiong Dai , Mehul Naik , Martin Jay Seamons , Bok Hoen Kim
IPC分类号： G03F1/00
CPC分类号： G03F7/091 , G03F7/11
摘要： The present invention comprises a method of reducing photoresist mask collapse when the photoresist mask is dried after immersion development. As feature sizes continue to shrink, the capillary force of water used to rinse a photoresist mask approaches the point of being greater than adhesion force of the photoresist to the ARC. When the capillary force exceeds the adhesion force, the features of the mask may collapse because the water pulls adjacent features together as the water dries. By depositing a hermetic oxide layer over the ARC before depositing the photoresist, the adhesion force may exceed the capillary force and the features of the photoresist mask may not collapse.
摘要翻译：本发明包括当浸渍显影后干燥光致抗蚀剂掩模时减少光致抗蚀剂掩模塌陷的方法。随着特征尺寸的不断缩小，用于冲洗光致抗蚀剂掩模的水的毛细管力接近光致抗蚀剂对ARC的粘附力。当毛细管力超过粘附力时，面具的特征可能会因为水干燥而将相邻的特征拉到一起而崩溃。通过在沉积光致抗蚀剂之前在ARC上沉积气密的氧化物层，粘合力可能会超过毛细管力，并且光致抗蚀剂掩模的特征可能不会崩溃。

7. 发明授权

US08293460B2 Double exposure patterning with carbonaceous hardmask 失效
标题翻译：用碳质硬掩模进行双重曝光图案化
公开(公告)号：US08293460B2
公开(公告)日：2012-10-23
申请号：US12339836
申请日：2008-12-19
申请人： Hui W. Chen , Chorng-Ping Chang , Yongmei Chen , Huixiong Dai , Jiahua Yu , Susie X. Yang , Xumou Xu , Christopher D. Bencher , Raymond Hoiman Hung , Michael P. Duane , Christopher Siu Wing Ngai , Jen Shu , Kenneth MacWilliams
发明人： Hui W. Chen , Chorng-Ping Chang , Yongmei Chen , Huixiong Dai , Jiahua Yu , Susie X. Yang , Xumou Xu , Christopher D. Bencher , Raymond Hoiman Hung , Michael P. Duane , Christopher Siu Wing Ngai , Jen Shu , Kenneth MacWilliams
IPC分类号： G03F7/20
CPC分类号： G03F7/11 , G03F7/091 , G03F7/2022
摘要： Methods to pattern features in a substrate layer by exposing a photoresist layer more than once. In one embodiment, a single reticle may be exposed more than once with an overlay offset implemented between successive exposures to reduce the half pitch of the reticle. In particular embodiments, these methods may be employed to reduce the half pitch of the features printed with 65 nm generation lithography equipment to achieve 45 nm lithography generation CD and pitch performance.
摘要翻译：通过不止一次地曝光光致抗蚀剂层来对衬底层中的特征进行图案化的方法。在一个实施例中，单个掩模版可以在连续曝光之间实现的覆盖偏移曝光不止一次以减小掩模版的半间距。在特定实施例中，可以使用这些方法来减少用65nm生成光刻设备印刷的特征的半间距，以实现45nm光刻产生CD和间距性能。

8. 发明申请

US20110111604A1 PLASMA SURFACE TREATMENT TO PREVENT PATTERN COLLAPSE IN IMMERSION LITHOGRAPHY 审中-公开
标题翻译：等离子体表面处理，以防止浸渍图中的图案褶皱
公开(公告)号：US20110111604A1
公开(公告)日：2011-05-12
申请号：US13007963
申请日：2011-01-17
申请人： Eui Kyoon Kim , Deenesh Padhi , Huixiong Dai , Mehul Naik , Martin Jay Seamons , Bok Hoen Kim
发明人： Eui Kyoon Kim , Deenesh Padhi , Huixiong Dai , Mehul Naik , Martin Jay Seamons , Bok Hoen Kim
IPC分类号： H01L21/31
CPC分类号： G03F7/091 , G03F7/11
摘要： The present invention comprises a method of reducing photoresist mask collapse when the photoresist mask is dried after immersion development. As feature sizes continue to shrink, the capillary force of water used to rinse a photoresist mask approaches the point of being greater than adhesion force of the photoresist to the ARC. When the capillary force exceeds the adhesion force, the features of the mask may collapse because the water pulls adjacent features together as the water dries. By depositing a hermetic oxide layer over the ARC before depositing the photoresist, the adhesion force may exceed the capillary force and the features of the photoresist mask may not collapse.
摘要翻译：本发明包括当浸渍显影后干燥光致抗蚀剂掩模时减少光致抗蚀剂掩模塌陷的方法。随着特征尺寸的不断缩小，用于冲洗光致抗蚀剂掩模的水的毛细管力接近光致抗蚀剂对ARC的粘附力。当毛细管力超过粘附力时，面具的特征可能会因为水干燥而将相邻的特征拉到一起而崩溃。通过在沉积光致抗蚀剂之前在ARC上沉积气密的氧化物层，粘合力可能会超过毛细管力，并且光致抗蚀剂掩模的特征可能不会崩溃。

9. 发明授权

US07901869B2 Double patterning with a double layer cap on carbonaceous hardmask 有权
标题翻译：在碳质硬掩模上双层图案化
公开(公告)号：US07901869B2
公开(公告)日：2011-03-08
申请号：US11873648
申请日：2007-10-17
申请人： Christopher D. Bencher , Huixiong Dai
发明人： Christopher D. Bencher , Huixiong Dai
IPC分类号： G03F7/26 , C23C16/00
CPC分类号： H01L21/0337 , H01L21/0338
摘要： Methods to etch features in a substrate with a multi-layered double patterning mask. The multi-layered double patterning mask includes a carbonaceous mask layer, a first cap layer on the carbonaceous mask layer and a second cap layer on the first cap layer. After forming the multi-layered mask, a first lithographically defined pattern is etched into the second cap layer. A double pattern that is a composition of the first lithographically defined pattern etched in the second cap layer and a second lithographically defined pattern is then etched into the first cap layer and the carbonaceous mask layer. The double pattern formed in the carbonaceous mask layer is then transferred to a substrate layer and any portion of the multi-layered mask remaining is then removed.
摘要翻译：用多层双图案掩模蚀刻衬底中的特征的方法。多层双层图案掩模包括碳质掩模层，碳质掩模层上的第一盖层和第一盖层上的第二盖层。在形成多层掩模之后，将第一光刻定义的图案蚀刻到第二盖层中。然后将作为在第二盖层中蚀刻的第一光刻定义图案和第二光刻定义图案的组合物的双重图案蚀刻到第一盖层和碳质掩模层中。然后将形成在碳质掩模层中的双重图案转移到基底层，然后除去剩余的多层掩模的任何部分。

10. 发明申请

US20150056800A1 Self-aligned interconnects formed using substractive techniques 有权
标题翻译：使用减法技术形成的自对准互连
公开(公告)号：US20150056800A1
公开(公告)日：2015-02-26
申请号：US13987667
申请日：2013-08-20
申请人： Bencherki Mebarki , Huixiong Dai , Yongmei Chen , He Ren , Mehul Naik
发明人： Bencherki Mebarki , Huixiong Dai , Yongmei Chen , He Ren , Mehul Naik
IPC分类号： H01L21/768
CPC分类号： H01L21/76897 , H01L21/32139 , H01L21/76885 , H01L23/53257 , H01L23/53276 , H01L2924/0002 , H01L2924/00
摘要： A method of forming an interconnect structure for semiconductor or MEMS structures at a 10 nm Node (16 nm HPCD) down to 5 nm Node (7 nm HPCD), or lower, where the conductive contacts of the interconnect structure are fabricated using solely subtractive techniques applied to conformal layers of conductive materials.
摘要翻译：在10nm节点（16nm HPCD）下至5nm节点（7nm HPCD）或更低的半导体或MEMS结构处形成互连结构的方法，其中互连结构的导电触点仅使用减法技术应用于导电材料的保形层。

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