专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110162582A1 DEPOSITION OF ACTIVE FILMS 有权
标题翻译：活性膜的沉积
公开(公告)号：US20110162582A1
公开(公告)日：2011-07-07
申请号：US12680239
申请日：2008-09-16
申请人： Christoph Ellert , Werner Wieland , Daniele Zorzi , Abed al hay Taha
发明人： Christoph Ellert , Werner Wieland , Daniele Zorzi , Abed al hay Taha
IPC分类号： C23C16/509 , C23C16/455
CPC分类号： H01J37/32541 , H01J37/32091
摘要： A plasma reactor (1) for treating a substrate (40), comprises at least two electrodes (20, 30) arranged within the reactor (1) defining an internal process space (13) there between, whereas the two electrodes (20, 30) are located opposed to each other and parallel with respect to a first surface (20a) of the electrodes (20, 30). Further it comprises a gas inlet (11) and a gas outlet (12) for transporting gas in and out of the plasma reactor (1), a radiofrequency generator (21) connected to at least one of the electrodes (20, 30). At least one of the electrodes (20, 30) has a corrective layer having a non planar shape along a surface (20a) facing the internal process space (13) which has in a first cross section along a radius of the electrode (20) a profile comprising three consecutive and adjacent segments, namely a first, a second and a third segment, where the third segment is adjacent to an edge of the electrode (20) and whereas medium gradient in the first segment is less than a medium gradient in the second segment and a medium gradient in the second segment is larger than a medium gradient in the third segment. An electrode (20) shaped in the above described manner provides for uniform plasma intensity along the surface of the substrate (40) and therefore provides for a treating which is homogenous and features uniform thickness. This invention further allows a compact construction of the vacuum treatment apparatus (1).
摘要翻译：一种用于处理衬底（40）的等离子体反应器（1），包括布置在所述反应器（1）内的至少两个电极（20,30），其在其间限定内部处理空间（13），而所述两个电极（20,30））相对于彼此相对并且相对于电极（20,30）的第一表面（20a）平行。此外，它包括用于输入和输出等离子体反应器（1）中的气体的气体入口（11）和气体出口（12），连接到至少一个电极（20,30）的射频发生器（21）。电极（20,30）中的至少一个具有沿着面向内部处理空间（13）的表面（20a）的非平面形状的校正层，该处理空间沿着电极（20）的半径具有第一横截面，包括三个连续且相邻的段，即第一段，第二和第三段的轮廓，其中第三段与电极（20）的边缘相邻，而第一段中的中等梯度小于中等梯度第二段中的第二段和中等梯度大于第三段中的中等梯度。以上述方式成形的电极（20）提供沿衬底（40）表面的均匀等离子体强度，因此提供均匀且具有均匀厚度的处理。本发明还允许真空处理装置（1）的紧凑结构。

2. 发明授权

US08689734B2 Deposition of active films 有权
标题翻译：沉积活性膜
公开(公告)号：US08689734B2
公开(公告)日：2014-04-08
申请号：US12680239
申请日：2008-09-16
申请人： Christoph Ellert , Werner Wieland , Daniele Zorzi , Abed al hay Taha
发明人： Christoph Ellert , Werner Wieland , Daniele Zorzi , Abed al hay Taha
IPC分类号： C23C16/509 , C23C16/455
CPC分类号： H01J37/32541 , H01J37/32091
摘要： A plasma reactor (1) for treating a substrate (40), comprises at least two electrodes (20, 30) arranged within the reactor (1) defining an internal process space (13) there between, whereas the two electrodes (20, 30) are located opposed to each other and parallel with respect to a first surface (20a) of the electrodes (20, 30). Further it comprises a gas inlet (11) and a gas outlet (12) for transporting gas in and out of the plasma reactor (1), a radiofrequency generator (21) connected to at least one of the electrodes (20, 30). At least one of the electrodes (20, 30) has a corrective layer having a non planar shape along a surface (20a) facing the internal process space (13) which has in a first cross section along a radius of the electrode (20) a profile comprising three consecutive and adjacent segments, namely a first, a second and a third segment, where the third segment is adjacent to an edge of the electrode (20) and whereas medium gradient in the first segment is less than a medium gradient in the second segment and a medium gradient in the second segment is larger than a medium gradient in the third segment. An electrode (20) shaped in the above described manner provides for uniform plasma intensity along the surface of the substrate (40) and therefore provides for a treating which is homogenous and features uniform thickness. This invention further allows a compact construction of the vacuum treatment apparatus (1).
摘要翻译：一种用于处理衬底（40）的等离子体反应器（1），包括布置在所述反应器（1）内的至少两个电极（20,30），其在其间限定内部处理空间（13），而所述两个电极（20,30））相对于彼此相对并且相对于电极（20,30）的第一表面（20a）平行。此外，它包括用于输入和输出等离子体反应器（1）中的气体的气体入口（11）和气体出口（12），连接到至少一个电极（20,30）的射频发生器（21）。电极（20,30）中的至少一个具有沿着面向内部处理空间（13）的表面（20a）的非平面形状的校正层，该处理空间沿着电极（20）的半径具有第一横截面，包括三个连续且相邻的段，即第一段，第二和第三段的轮廓，其中第三段与电极（20）的边缘相邻，而第一段中的中等梯度小于中等梯度第二段中的第二段和中等梯度大于第三段中的中等梯度。以上述方式成形的电极（20）提供沿衬底（40）表面的均匀等离子体强度，因此提供均匀且具有均匀厚度的处理。本发明还允许真空处理装置（1）的紧凑结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式