专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08470683B2 Method and electronic device for a simplified integration of high precision thinfilm resistors 有权
标题翻译：方法和电子设备，用于简化高精度薄膜电阻的集成
公开(公告)号：US08470683B2
公开(公告)日：2013-06-25
申请号：US13032426
申请日：2011-02-22
申请人： Christoph Dirnecker , Wolfgang Ploss
发明人： Christoph Dirnecker , Wolfgang Ploss
IPC分类号： H01L29/86 , H01L21/02
CPC分类号： H01L28/20 , H01L21/76816 , H01L23/5228 , H01L27/016 , H01L28/24 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a method of manufacturing an integrated circuit. An electrically resistive layer of a material for serving as a thin film resistor (TFR) is deposited. A first electrically insulating layer is deposited on the electrically resistive layer of the TFR. An electrically conductive layer of an electrically conductive material is deposited. An area is left without the conductive layer and the area overlaps the electrically resistive layer of the TFR. A second electrically insulating layer is deposited on top of the conductive layer. A first VIA opening is etched through the second insulating layer, the area without the conductive layer adjacent to the electrically conductive layer and through the first insulating layer down to the electrically resistive layer of the TFR. A conductive material is deposited in the first VIA opening so as to electrically connect the conductive layer and the electrically resistive layer of the TFR.
摘要翻译：本发明涉及一种制造集成电路的方法。沉积用作薄膜电阻器（TFR）的材料的电阻层。第一电绝缘层沉积在TFR的电阻层上。沉积导电材料的导电层。没有导电层而没有区域与TFR的电阻层重叠。第二电绝缘层沉积在导电层的顶部上。通过第二绝缘层蚀刻第一VIA开口，没有导电层的区域与导电层相邻并且通过第一绝缘层直到TFR的电阻层。在第一VIA开口中沉积导电材料，以电连接TFR的导电层和电阻层。

2. 发明申请

US20110204482A1 Method and Electronic Device for a Simplified Integration of High Precision Thinfilm Resistors 有权
标题翻译：用于简化高精度薄膜电阻器集成的方法和电子设备
公开(公告)号：US20110204482A1
公开(公告)日：2011-08-25
申请号：US13032426
申请日：2011-02-22
申请人： Christoph Dirnecker , Wolfgang Ploss
发明人： Christoph Dirnecker , Wolfgang Ploss
IPC分类号： H01L29/86 , H01L21/02
CPC分类号： H01L28/20 , H01L21/76816 , H01L23/5228 , H01L27/016 , H01L28/24 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a method of manufacturing an integrated circuit. An electrically resistive layer of a material for serving as a thin film resistor (TFR) is deposited. A first electrically insulating layer is deposited on the electrically resistive layer of the TFR. An electrically conductive layer of an electrically conductive material is deposited. An area is left without the conductive layer and the area overlaps the electrically resistive layer of the TFR. A second electrically insulating layer is deposited on top of the conductive layer. A first VIA opening is etched through the second insulating layer, the area without the conductive layer adjacent to the electrically conductive layer and through the first insulating layer down to the electrically resistive layer of the TFR. A conductive material is deposited in the first VIA opening so as to electrically connect the conductive layer and the electrically resistive layer of the TFR.
摘要翻译：本发明涉及一种制造集成电路的方法。沉积用作薄膜电阻器（TFR）的材料的电阻层。第一电绝缘层沉积在TFR的电阻层上。沉积导电材料的导电层。没有导电层而没有区域与TFR的电阻层重叠。第二电绝缘层沉积在导电层的顶部上。通过第二绝缘层蚀刻第一VIA开口，没有导电层的区域与导电层相邻并且通过第一绝缘层直到TFR的电阻层。在第一VIA开口中沉积导电材料，以电连接TFR的导电层和电阻层。

3. 发明授权

US08330223B2 Bipolar transistor 有权
标题翻译：双极晶体管
公开(公告)号：US08330223B2
公开(公告)日：2012-12-11
申请号：US12874403
申请日：2010-09-02
申请人： Klaus Schimpf , Manfred Schiekofer , Carl David Willis , Michael Waitschull , Wolfgang Ploss
发明人： Klaus Schimpf , Manfred Schiekofer , Carl David Willis , Michael Waitschull , Wolfgang Ploss
IPC分类号： H01L27/12
CPC分类号： H01L29/737 , H01L21/76232 , H01L29/0649 , H01L29/66242
摘要： A bipolar transistor has a collector having a base layer provided thereon and a shallow trench isolation structure formed therein. A base poly layer is provided on the shallow trench isolation structure. The shallow trench isolation structure defines a step such that a surface of the collector projects from the shallow trench isolation structure adjacent the collector.
摘要翻译：双极晶体管具有设置在其上的基极层和在其中形成的浅沟槽隔离结构的集电极。在浅沟槽隔离结构上设置基底多层。浅沟槽隔离结构限定了一个步骤，使得集电器的表面从邻近收集器的浅沟槽隔离结构突出。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式