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1. 发明授权

US07638370B2 Method for producing multi-gate field-effect transistor with fin structure having drain-extended MOS field-effect transistor 有权
标题翻译：具有漏极扩展MOS场效应晶体管的鳍结构的多栅极场效应晶体管的制造方法
公开(公告)号：US07638370B2
公开(公告)日：2009-12-29
申请号：US11800984
申请日：2007-05-08
申请人： Harald Gossner , Thomas Schulz , Christian Russ , Gerhard Knoblinger
发明人： Harald Gossner , Thomas Schulz , Christian Russ , Gerhard Knoblinger
IPC分类号： H01L29/78 , H01L21/332
CPC分类号： H01L29/78624 , H01L21/26586 , H01L21/84 , H01L27/0262 , H01L27/1203 , H01L29/66393 , H01L29/7436 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： In a method for producing an electronic component, a first doped connection region and a second doped connection region are formed on or above a substrate; a body region is formed between the first doped connection region and the second doped connection region; at least two gate regions separate from one another are formed on or above the body region; at least one partial region of the body region is doped by means of introducing dopant atoms, wherein the dopant atoms are introduced into the at least one partial region of the body region through at least one intermediate region formed between the at least two separate gate regions.
摘要翻译：在电子部件的制造方法中，在基板上或上方形成第一掺杂连接区域和第二掺杂连接区域，在所述第一掺杂连接区域和所述第二掺杂连接区域之间形成体区; 在身体区域上或上方形成彼此分离的至少两个栅极区域; 通过引入掺杂剂原子来掺杂体区的至少一个部分区域，其中通过形成在至少两个分开的栅极区域之间的至少一个中间区域将掺杂剂原子引入到体区的至少一个部分区域中。

2. 发明授权

US08072061B2 Semiconductor device with cooling element 有权
标题翻译：带冷却元件的半导体器件
公开(公告)号：US08072061B2
公开(公告)日：2011-12-06
申请号：US12720700
申请日：2010-03-10
申请人： Harald Gossner , Christian Russ , Thomas Schulz , Jens Schneider
发明人： Harald Gossner , Christian Russ , Thomas Schulz , Jens Schneider
IPC分类号： H01L23/34
CPC分类号： H01L29/785 , H01L23/367 , H01L27/0248 , H01L29/66795 , H01L2924/0002 , H01L2924/00
摘要： Some embodiments discussed herein include a semiconductor having a source region, a drain region and an array of fins operatively coupled to a gate region controlling current flow through the fins between the source region and the drain region. The semiconductor also has at least one cooling element formed at least in part of a material having a heat capacity equal to or larger than the heat capacity of the material of the source region, drain region and array of fins, the cooling elements being in close vicinity to fins of the array of fins electrically isolated from the fins of the array, the source region and the drain region.
摘要翻译：本文讨论的一些实施例包括具有源极区域，漏极区域和翅片阵列的半导体，其可操作地耦合到栅极区域，以控制流过源极区域和漏极区域之间的鳍片的电流。所述半导体还具有至少一部分形成有至少部分热容量等于或大于所述源极区域，漏极区域和散热片阵列的热容量的冷却元件的冷却元件，所述冷却元件处于闭合状态靠近与阵列的鳍片，源极区域和漏极区域电隔离的翅片阵列的翅片。

3. 发明授权

US07678632B2 MuGFET with increased thermal mass 有权
标题翻译： MuGFET具有增加的热质量
公开(公告)号：US07678632B2
公开(公告)日：2010-03-16
申请号：US11561170
申请日：2006-11-17
申请人： Harald Gossner , Christian Russ , Jens Schneider , Thomas Schulz
发明人： Harald Gossner , Christian Russ , Jens Schneider , Thomas Schulz
IPC分类号： H01L21/336
CPC分类号： H01L29/785 , H01L23/367 , H01L27/0248 , H01L29/66795 , H01L2924/0002 , H01L2924/00
摘要： Some embodiments discussed herein include a semiconductor having a source region, a drain region and an array of fins operatively coupled to a gate region controlling current flow through the fins between the source region and the drain region. The semiconductor also has at least one cooling element formed at least in part of a material having a heat capacity equal to or larger than the heat capacity of the material of the source region, drain region and array of fins, the cooling elements being in close vicinity to fins of the array of fins electrically isolated from the fins of the array, the source region and the drain region. Other embodiments are also disclosed.
摘要翻译：本文讨论的一些实施例包括具有源极区域，漏极区域和翅片阵列的半导体，其可操作地耦合到栅极区域，以控制流过源极区域和漏极区域之间的鳍片的电流。所述半导体还具有至少一部分形成有至少部分热容量等于或大于所述源极区域，漏极区域和散热片阵列的热容量的冷却元件的冷却元件，所述冷却元件处于闭合状态靠近与阵列的鳍片，源极区域和漏极区域电隔离的翅片阵列的翅片。还公开了其他实施例。

4. 发明申请

US20080111163A1 FIELD EFFECT TRANSISTOR WITH A FIN STRUCTURE 有权
标题翻译：具有结构的场效应晶体管
公开(公告)号：US20080111163A1
公开(公告)日：2008-05-15
申请号：US11559656
申请日：2006-11-14
申请人： Christian Russ , Harald Gossner , Thomas Schulz
发明人： Christian Russ , Harald Gossner , Thomas Schulz
IPC分类号： H01L21/336 , H01L29/78 , H01L29/812 , H01L21/338 , H01L21/44
CPC分类号： H01L29/785 , H01L29/458 , H01L29/66795 , H01L29/7854 , H01L29/78621
摘要： A field effect transistor with a fin structure having a first and a second source/drain region; a body region formed within the fin structure and between the first and the second source/drain region; a metallically conductive region formed within a part of the first source/drain region, the metallically conductive region being adjacent to the body region or to a lightly doped region disposed between the body region and the first source/drain region; and a current ballasting region formed within a part of the second source/drain region.
摘要翻译：一种具有鳍结构的场效应晶体管，具有第一和第二源极/漏极区域; 形成在所述鳍结构内并且在所述第一和第二源极/漏极区之间的体区; 形成在所述第一源极/漏极区域的一部分内的金属导电区域，所述金属导电区域邻近所述体区域或者设置在所述体区域和所述第一源极/漏极区域之间的轻掺杂区域; 以及形成在第二源极/漏极区域的一部分内的电流镇流区域。

5. 发明申请

US20100062573A1 METHOD FOR PRODUCING AN ELECTRONIC COMPONENT, METHOD FOR PRODUCING A THYRISTOR, METHOD FOR PRODUCING A DRAIN-EXTENDED MOS FILED-EFFECT TRANSISTOR, ELECTRONIC COMPONENT, DRAIN-EXTENDED MOS FIELD-EFFECT TRANSISTOR, ELECTRONIC COMPONENT ARRANGEMENT 有权
标题翻译：用于制造电子元件的方法，用于制造电容器的方法，用于产生漏极扩展MOS填充效应晶体管的方法，电子元件，漏极扩展的MOS场效应晶体管，电子元件布置
公开(公告)号：US20100062573A1
公开(公告)日：2010-03-11
申请号：US12620930
申请日：2009-11-18
申请人： Harald Gossner , Thomas Schulz , Christian Russ , Gerhard Knoblinger
发明人： Harald Gossner , Thomas Schulz , Christian Russ , Gerhard Knoblinger
IPC分类号： H01L21/332
CPC分类号： H01L29/78624 , H01L21/26586 , H01L21/84 , H01L27/0262 , H01L27/1203 , H01L29/66393 , H01L29/7436 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： In a method for producing an electronic component, a first doped connection region and a second doped connection region are formed on or above a substrate; a body region is formed between the first doped connection region and the second doped connection region; at least two gate regions separate from one another are formed on or above the body region; at least one partial region of the body region is doped by means of introducing dopant atoms, wherein the dopant atoms are introduced into the at least one partial region of the body region through at least one intermediate region formed between the at least two separate gate regions.
摘要翻译：在电子部件的制造方法中，在基板上或上方形成第一掺杂连接区域和第二掺杂连接区域，在所述第一掺杂连接区域和所述第二掺杂连接区域之间形成体区; 在身体区域上或上方形成彼此分离的至少两个栅极区域; 通过引入掺杂剂原子来掺杂体区的至少一个部分区域，其中通过形成在至少两个分开的栅极区域之间的至少一个中间区域将掺杂剂原子引入到体区的至少一个部分区域中。

6. 发明申请

US20080116515A1 MUGFET WITH INCREASED THERMAL MASS 有权
标题翻译： MUGFET具有增加的热质量
公开(公告)号：US20080116515A1
公开(公告)日：2008-05-22
申请号：US11561170
申请日：2006-11-17
申请人： Harald Gossner , Christian Russ , Jens Schneider , Thomas Schulz
发明人： Harald Gossner , Christian Russ , Jens Schneider , Thomas Schulz
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/785 , H01L23/367 , H01L27/0248 , H01L29/66795 , H01L2924/0002 , H01L2924/00
摘要： Some embodiments discussed herein include a semiconductor having a source region, a drain region and an array of fins operatively coupled to a gate region controlling current flow through the fins between the source region and the drain region. The semiconductor also has at least one cooling element formed at least in part of a material having a heat capacity equal to or larger than the heat capacity of the material of the source region, drain region and array of fins, the cooling elements being in close vicinity to fins of the array of fins electrically isolated from the fins of the array, the source region and the drain region. Other embodiments are also disclosed
摘要翻译：本文讨论的一些实施例包括具有源极区域，漏极区域和翅片阵列的半导体，其可操作地耦合到栅极区域，以控制流过源极区域和漏极区域之间的鳍片的电流。所述半导体还具有至少一部分形成有至少部分热容量等于或大于所述源极区域，漏极区域和散热片阵列的热容量的冷却元件的冷却元件，所述冷却元件处于闭合状态靠近与阵列的鳍片，源极区域和漏极区域电隔离的翅片阵列的翅片。还公开了其他实施例

7. 发明申请

US20080067587A1 Method for producing an electronic component, method for producing a thyristor, method for producing a drain-extended MOS filed-effect transistor, electronic component, drain-extended MOS field-effect transistor, electronic component arrangement 有权
标题翻译：电子元件的制造方法，晶闸管的制造方法，漏极扩展MOS场效应晶体管的制造方法，电子元件，漏极扩展MOS场效应晶体管，电子元件配置
公开(公告)号：US20080067587A1
公开(公告)日：2008-03-20
申请号：US11800984
申请日：2007-05-08
申请人： Harald Gossner , Thomas Schulz , Christian Russ , Gerhard Knoblinger
发明人： Harald Gossner , Thomas Schulz , Christian Russ , Gerhard Knoblinger
IPC分类号： H01L29/78 , H01L21/332 , H01L21/336
CPC分类号： H01L29/78624 , H01L21/26586 , H01L21/84 , H01L27/0262 , H01L27/1203 , H01L29/66393 , H01L29/7436 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： In a method for producing an electronic component, a first doped connection region and a second doped connection region are formed on or above a substrate; a body region is formed between the first doped connection region and the second doped connection region; at least two gate regions separate from one another are formed on or above the body region; at least one partial region of the body region is doped by means of introducing dopant atoms, wherein the dopant atoms are introduced into the at least one partial region of the body region through at least one intermediate region formed between the at least two separate gate regions.
摘要翻译：在电子部件的制造方法中，在基板上或上方形成第一掺杂连接区域和第二掺杂连接区域，在所述第一掺杂连接区域和所述第二掺杂连接区域之间形成体区; 在身体区域上或上方形成彼此分离的至少两个栅极区域; 通过引入掺杂剂原子来掺杂体区的至少一个部分区域，其中通过形成在至少两个分开的栅极区域之间的至少一个中间区域将掺杂剂原子引入到体区的至少一个部分区域中。

8. 发明授权

US08450156B2 Method for producing a thyristor 有权
标题翻译：晶闸管的制造方法
公开(公告)号：US08450156B2
公开(公告)日：2013-05-28
申请号：US13481969
申请日：2012-05-29
申请人： Harald Gossner , Thomas Schulz , Christian Russ , Gerhard Knoblinger
发明人： Harald Gossner , Thomas Schulz , Christian Russ , Gerhard Knoblinger
IPC分类号： H01L21/332
CPC分类号： H01L29/78624 , H01L21/26586 , H01L21/84 , H01L27/0262 , H01L27/1203 , H01L29/66393 , H01L29/7436 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： In a method for producing a thyristor, first and second connection regions are formed on or above a substrate; the first connection region is doped with dopant atoms of a first conductivity type and the second connection region is doped with dopant atoms of a second conductivity type; first and second body regions are formed between the connection regions, wherein the first body region is formed between the first connection region and second body region, and the second body region is formed between the first body region and second connection region; the first body region is doped with dopant atoms of the second conductivity type and the second body region is doped with dopant atoms of the first conductivity type, wherein the dopant atoms are in each case introduced into the respective body region using a Vt implantation method; a gate region is formed on or above the body regions.
摘要翻译：在晶闸管的制造方法中，在基板上或上方形成有第一和第二连接区域，第一连接区域掺杂有第一导电类型的掺杂剂原子，并且第二连接区域掺杂有第二导电类型的掺杂剂原子; 第一和第二体区域形成在连接区域之间，其中第一体区形成在第一连接区域和第二体区域之间，第二体区域形成在第一体区域和第二连接区域之间; 所述第一体区掺杂有所述第二导电类型的掺杂剂原子，并且所述第二体区掺杂有所述第一导电类型的掺杂剂原子，其中所述掺杂剂原子在每种情况下使用Vt注入方法引入相应的体区; 在身体区域上或上方形成栅极区域。

9. 发明申请

US20120252172A1 Method for producing a thyristor 有权
标题翻译：晶闸管的制造方法
公开(公告)号：US20120252172A1
公开(公告)日：2012-10-04
申请号：US13481969
申请日：2012-05-29
申请人： Harald Gossner , Thomas Schulz , Christian Russ , Gerhard Knoblinger
发明人： Harald Gossner , Thomas Schulz , Christian Russ , Gerhard Knoblinger
IPC分类号： H01L21/332
CPC分类号： H01L29/78624 , H01L21/26586 , H01L21/84 , H01L27/0262 , H01L27/1203 , H01L29/66393 , H01L29/7436 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： In a method for producing a thyristor, first and second connection regions are formed on or above a substrate; the first connection region is doped with dopant atoms of a first conductivity type and the second connection region is doped with dopant atoms of a second conductivity type; first and second body regions are formed between the connection regions, wherein the first body region is formed between the first connection region and second body region, and the second body region is formed between the first body region and second connection region; the first body region is doped with dopant atoms of the second conductivity type and the second body region is doped with dopant atoms of the first conductivity type, wherein the dopant atoms are in each case introduced into the respective body region using a Vt implantation method; a gate region is formed on or above the body regions.
摘要翻译：在晶闸管的制造方法中，在基板上或上方形成有第一和第二连接区域，第一连接区域掺杂有第一导电类型的掺杂剂原子，并且第二连接区域掺杂有第二导电类型的掺杂剂原子; 第一和第二体区域形成在连接区域之间，其中第一体区形成在第一连接区域和第二体区域之间，第二体区域形成在第一体区域和第二连接区域之间; 所述第一体区掺杂有所述第二导电类型的掺杂剂原子，并且所述第二体区掺杂有所述第一导电类型的掺杂剂原子，其中所述掺杂剂原子在每种情况下都使用Vt注入法引入所述体区; 在身体区域上或上方形成栅极区域。

10. 发明授权

US08236624B2 Method for producing a thyristor 有权
标题翻译：晶闸管的制造方法
公开(公告)号：US08236624B2
公开(公告)日：2012-08-07
申请号：US12620930
申请日：2009-11-18
申请人： Harald Gossner , Thomas Schulz , Christian Russ , Gerhard Knoblinger
发明人： Harald Gossner , Thomas Schulz , Christian Russ , Gerhard Knoblinger
IPC分类号： H01L21/332
CPC分类号： H01L29/78624 , H01L21/26586 , H01L21/84 , H01L27/0262 , H01L27/1203 , H01L29/66393 , H01L29/7436 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： In a method for producing an electronic component, a first doped connection region and a second doped connection region are formed on or above a substrate; a body region is formed between the first doped connection region and the second doped connection region; at least two gate regions separate from one another are formed on or above the body region; at least one partial region of the body region is doped by means of introducing dopant atoms, wherein the dopant atoms are introduced into the at least one partial region of the body region through at least one intermediate region formed between the at least two separate gate regions.
摘要翻译：在电子部件的制造方法中，在基板上或上方形成第一掺杂连接区域和第二掺杂连接区域，在所述第一掺杂连接区域和所述第二掺杂连接区域之间形成体区; 在身体区域上或上方形成彼此分离的至少两个栅极区域; 通过引入掺杂剂原子来掺杂体区的至少一个部分区域，其中通过形成在至少两个分开的栅极区域之间的至少一个中间区域将掺杂剂原子引入到体区的至少一个部分区域中。

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