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    • 3. 发明申请
    • Optically Pumped Semiconductor Device
    • 光泵浦半导体器件
    • US20080080582A1
    • 2008-04-03
    • US11579196
    • 2005-04-11
    • Christian KarnutschNorbert LinderWolfgang Schmid
    • Christian KarnutschNorbert LinderWolfgang Schmid
    • H01S5/183H01S5/026
    • H01S5/18305H01S5/026H01S5/041H01S5/141H01S5/18313H01S5/18327H01S5/18388H01S5/32341
    • A semiconductor device comprising an optically pumped vertical emitter having an active vertical emitter layer (3), and a pump radiation source, which is used to generate a pump radiation field which propagates in the lateral direction and optically pumps the vertical emitter layer (3) in a pump region, the wavelength of the pump radiation field being smaller than the wavelength of the radiation field (12) generated by the vertical emitter. The pump radiation source has an active pump layer (2), which is arranged downstream of the vertical emitter layer (3) in the vertical direction and which at least partly overlaps the vertical emitter layer as seen in the vertical direction, the active pump layer (2) being arranged in such a way that the pump radiation field generated during operation has a higher power than a parasitic laterally propagating radiation field generated by the vertical emitter layer (3) or that the generation of a parasitic laterally propagating radiation field by the vertical emitter layer (3) is suppressed.
    • 一种半导体器件,包括具有有源垂直发射极层(3)的光泵浦垂直发射器和用于产生在横向方向上传播并泵浦垂直发射极层(3)的泵浦辐射场的泵浦辐射源, 在泵浦区域中,泵浦辐射场的波长小于由垂直发射器产生的辐射场(12)的波长。 泵浦辐射源具有主动泵浦层(2),其在垂直方向上布置在垂直发射极层(3)的下游,并且在垂直方向上至少部分地与垂直发射极层重叠,主动泵浦层 (2)被布置成使得在操作期间产生的泵浦辐射场具有比由垂直发射极层(3)产生的寄生横向传播辐射场更高的功率,或者由所产生的寄生横向传播辐射场 垂直发射极层(3)被抑制。
    • 4. 发明授权
    • Optically pumped semiconductor device
    • 光泵浦半导体器件
    • US07778300B2
    • 2010-08-17
    • US11579196
    • 2005-04-11
    • Christian KarnutschNorbert LinderWolfgang Schmid
    • Christian KarnutschNorbert LinderWolfgang Schmid
    • H01S5/00
    • H01S5/18305H01S5/026H01S5/041H01S5/141H01S5/18313H01S5/18327H01S5/18388H01S5/32341
    • A semiconductor device comprising an optically pumped vertical emitter having an active vertical emitter layer (3), and a pump radiation source, which is used to generate a pump radiation field which propagates in the lateral direction and optically pumps the vertical emitter layer (3) in a pump region, the wavelength of the pump radiation field being smaller than the wavelength of the radiation field (12) generated by the vertical emitter. The pump radiation source has an active pump layer (2), which is arranged downstream of the vertical emitter layer (3) in the vertical direction and which at least partly overlaps the vertical emitter layer as seen in the vertical direction, the active pump layer (2) being arranged in such a way that the pump radiation field generated during operation has a higher power than a parasitic laterally propagating radiation field generated by the vertical emitter layer (3) or that the generation of a parasitic laterally propagating radiation field by the vertical emitter layer (3) is suppressed.
    • 一种半导体器件,包括具有有源垂直发射极层(3)的光泵浦垂直发射器和用于产生在横向方向上传播并泵浦垂直发射极层(3)的泵浦辐射场的泵浦辐射源, 在泵浦区域中,泵浦辐射场的波长小于由垂直发射器产生的辐射场(12)的波长。 泵浦辐射源具有主动泵浦层(2),其在垂直方向上布置在垂直发射极层(3)的下游,并且在垂直方向上至少部分地与垂直发射极层重叠,主动泵浦层 (2)被布置成使得在操作期间产生的泵浦辐射场具有比由垂直发射极层(3)产生的寄生横向传播辐射场更高的功率,或者由所产生的寄生横向传播辐射场 垂直发射极层(3)被抑制。