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    • 5. 发明申请
    • Circuit arrangement
    • 电路布置
    • US20050237684A1
    • 2005-10-27
    • US10526278
    • 2003-10-01
    • Christian BlockHolger FluhrAndreas PrzadkaHeinz Ragossnig
    • Christian BlockHolger FluhrAndreas PrzadkaHeinz Ragossnig
    • H02H9/06H04B1/18H04B1/48H02H9/04
    • H04B1/48H02H9/06H04B1/18
    • A circuit arrangement is described having a terminal (1) for a high-frequency signal, having at least two additional signal leads (21a, 21b, 21c, 22a, 22b), having a switching unit (3) for connecting the terminal (1) to a signal lead (21a, 21b, 21c, 22a, 22b), having a primary protection device (41) against electrostatic discharges, which is connected between the terminal (1) and the switching unit (3), the protection device (41) containing a first voltage limitation element (51), which diverts voltage pulses that exceed a switching voltage of 200 V to a reference potential (7). The use of a gallium arsenide double diode makes it possible to attain the advantage of a low insertion loss coupled with a low switching voltage.
    • 描述了具有用于高频信号的端子(1)的电路装置,其具有至少两个附加信号引线(21a,21b,21c,22a,22b),其具有开关单元(3),用于 将端子(1)连接到具有抵抗静电放电的主保护装置(41)的信号引线(21a,21b,21c,22a,22b),所述主保护装置连接在端子(1)和 开关单元(3),所述保护装置(41)包含第一电压限制元件(51),其将超过200V的开关电压的电压脉冲转换为参考电位(7)。 使用砷化镓双重二极管可以实现与低开关电压相结合的低插入损耗的优点。
    • 10. 发明授权
    • Electrical multilayer component with reduced parasitic capacitance
    • 降低寄生电容的电气多层组件
    • US08058965B2
    • 2011-11-15
    • US11993273
    • 2006-06-19
    • Christian BlockHolger FlührAlois KleeweinGünter PudmichHeinz Ragossnig
    • Christian BlockHolger FlührAlois KleeweinGünter PudmichHeinz Ragossnig
    • H01C7/10
    • H01G4/30H01C1/148H01C7/1006H01C7/18H01G4/12H01G4/232
    • An electrical multi-layer component includes a body having a stack of ceramic layers, with a top and a bottom. First and second connection surfaces are on the bottom of the body. Electrode surfaces are in metallization layers among the ceramic layers. Via contacts are between metallization layers. At least one of the via contacts is connected electrically to an electrode surface or to a connection surface. An electrode surface connected to one of the connection surfaces, through a corresponding via contact, is a first electrode structure or a second electrode structure. At least one of the first or second electrode structures includes a via contact that has a blind end. A shortest distance between the first and second electrode structures is a vertical distance from the blind end to: (i) a metallization layer above or below the blind end, or (ii) a blind end of another electrode structure.
    • 电气多层部件包括具有顶部和底部的具有陶瓷层的堆叠的主体。 第一和第二连接表面位于主体的底部。 电极表面位于陶瓷层之间的金属化层中。 通过触点位于金属化层之间。 通孔触点中的至少一个电连接到电极表面或连接表面。 通过相应的通孔接点连接到一个连接表面的电极表面是第一电极结构或第二电极结构。 第一或第二电极结构中的至少一个包括具有盲端的通孔接触。 第一和第二电极结构之间的最短距离是从盲端到(i)在盲端上方或下方的金属化层的垂直距离,或(ii)另一电极结构的盲端。