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1. 发明授权

US08110738B2 Protective layer for large-scale production of thin-film solar cells 有权
标题翻译：用于大规模生产薄膜太阳能电池的保护层
公开(公告)号：US08110738B2
公开(公告)日：2012-02-07
申请号：US12379427
申请日：2009-02-20
申请人： Chris Schmidt , John Corson
发明人： Chris Schmidt , John Corson
IPC分类号： H01L31/00
CPC分类号： H01L31/022425 , H01L31/022466 , H01L31/0392 , H01L31/03928 , H01L31/056 , Y02E10/52 , Y02E10/541
摘要： A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 μm, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.
摘要翻译：太阳能电池包括基板，位于基板的第一表面上的保护层，位于基板的第二表面上的第一电极，位于第一电极上方的至少一个p型半导体吸收层，n型半导体层位于p型半导体吸收体层上方，第二电极位于n型半导体层的上方。 p型半导体吸收层包括基于铜铟硒（CIS）的合金材料，第二电极是透明和导电的。保护层的波长为2μm时的发射率大于0.25，与含有硒的气体的反应性低于衬底的反应性，并且与第一电极的组成，厚度，密度，发射率，电导率或应力状态。保护层的发射率曲线可以是均匀的或不均匀的。

2. 发明申请

US20110318868A1 Protective Layer for Large-Scale Production of Thin-Film Solar Cells 有权
标题翻译：薄膜太阳能电池大规模生产保护层
公开(公告)号：US20110318868A1
公开(公告)日：2011-12-29
申请号：US13230305
申请日：2011-09-12
申请人： Chris Schmidt , John Corson
发明人： Chris Schmidt , John Corson
IPC分类号： H01L31/0264
CPC分类号： H01L31/022425 , H01L31/022466 , H01L31/0392 , H01L31/03928 , H01L31/056 , Y02E10/52 , Y02E10/541
摘要： A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 μm, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.
摘要翻译：太阳能电池包括基板，位于基板的第一表面上的保护层，位于基板的第二表面上的第一电极，位于第一电极上方的至少一个p型半导体吸收层，n型半导体层位于p型半导体吸收体层上方，第二电极位于n型半导体层的上方。 p型半导体吸收层包括基于铜铟硒（CIS）的合金材料，第二电极是透明和导电的。保护层的波长为2μm时的发射率大于0.25，与含有硒的气体的反应性低于衬底的反应性，并且与第一电极的组成，厚度，密度，发射率，电导率或应力状态。保护层的发射率曲线可以是均匀的或不均匀的。

3. 发明授权

US08389321B2 Protective layer for large-scale production of thin-film solar cells 有权
标题翻译：用于大规模生产薄膜太阳能电池的保护层
公开(公告)号：US08389321B2
公开(公告)日：2013-03-05
申请号：US13230305
申请日：2011-09-12
申请人： Chris Schmidt , John Corson
发明人： Chris Schmidt , John Corson
IPC分类号： H01L21/00
CPC分类号： H01L31/022425 , H01L31/022466 , H01L31/0392 , H01L31/03928 , H01L31/056 , Y02E10/52 , Y02E10/541
摘要： A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 μm, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.
摘要翻译：太阳能电池包括基板，位于基板的第一表面上的保护层，位于基板的第二表面上的第一电极，位于第一电极上方的至少一个p型半导体吸收层，n型半导体层位于p型半导体吸收体层上方，第二电极位于n型半导体层的上方。 p型半导体吸收层包括基于铜铟硒（CIS）的合金材料，第二电极是透明和导电的。保护层的波长为2μm时的发射率大于0.25，与含有硒的气体的反应性低于衬底的反应性，并且与第一电极的组成，厚度，密度，发射率，电导率或应力状态。保护层的发射率曲线可以是均匀的或不均匀的。

4. 发明申请

US20100212733A1 Protective layer for large-scale production of thin-film solar cells 有权
公开(公告)号：US20100212733A1
公开(公告)日：2010-08-26
申请号：US12379428
申请日：2009-02-20
申请人： Chris Schmidt , John Corson
发明人： Chris Schmidt , John Corson
IPC分类号： H01L31/0216 , H01L21/04
CPC分类号： H01L31/03923 , H01L31/0322 , H01L31/18 , H01L31/1864 , H01L31/206 , Y02E10/541 , Y02P70/521
摘要： A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 μm, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

5. 发明授权

US08115095B2 Protective layer for large-scale production of thin-film solar cells 有权
公开(公告)号：US08115095B2
公开(公告)日：2012-02-14
申请号：US12379428
申请日：2009-02-20
申请人： Chris Schmidt , John Corson
发明人： Chris Schmidt , John Corson
IPC分类号： H01L31/00
CPC分类号： H01L31/03923 , H01L31/0322 , H01L31/18 , H01L31/1864 , H01L31/206 , Y02E10/541 , Y02P70/521
摘要： A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 μm, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

6. 发明申请

US20100212732A1 Protective layer for large-scale production of thin-film solar cells 有权
标题翻译：用于大规模生产薄膜太阳能电池的保护层
公开(公告)号：US20100212732A1
公开(公告)日：2010-08-26
申请号：US12379427
申请日：2009-02-20
申请人： Chris Schmidt , John Corson
发明人： Chris Schmidt , John Corson
IPC分类号： H01L31/0264 , H01L21/04 , H01L21/70
CPC分类号： H01L31/022425 , H01L31/022466 , H01L31/0392 , H01L31/03928 , H01L31/056 , Y02E10/52 , Y02E10/541
摘要： A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 μm, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.
摘要翻译：太阳能电池包括基板，位于基板的第一表面上的保护层，位于基板的第二表面上的第一电极，位于第一电极上方的至少一个p型半导体吸收层，n型半导体层位于p型半导体吸收体层上方，第二电极位于n型半导体层的上方。 p型半导体吸收层包括基于铜铟硒（CIS）的合金材料，第二电极是透明和导电的。保护层的波长为2μm时的发射率大于0.25，与含有硒的气体的反应性低于衬底的反应性，并且与第一电极的组成，厚度，密度，发射率，电导率或应力状态。保护层的发射率曲线可以是均匀的或不均匀的。

7. 发明申请

US20060055308A1 Plasma display filter with a dielectric/metallic layer stack of at least eleven layers 审中-公开
标题翻译：具有至少11层的介电/金属层叠的等离子显示滤光片
公开(公告)号：US20060055308A1
公开(公告)日：2006-03-16
申请号：US10943509
申请日：2004-09-16
申请人： Bruce Lairson , Stanley Louie , Chris Schmidt , Erik Gaderlund
发明人： Bruce Lairson , Stanley Louie , Chris Schmidt , Erik Gaderlund
IPC分类号： H01J1/62 , H01J63/04 , H01J17/49
CPC分类号： H01J11/44 , G02B5/284 , G02B5/285 , H01J11/10 , H05K9/0096
摘要： A plasma display filter includes five metallic layers, such as silver alloy layers, having a combined thickness that exceeds 50 nm. The metallic layers form an alternating pattern with dielectric layers, where the layer in the pattern closest to a supporting substrate is the first of the dielectric layers. Layer thicknesses are selected to achieve a low reflected color shift with changes in the viewing angle, relatively neutral transmitted color properties, and desirable shielding characteristics with respect to infrared and electromagnetic radiation.
摘要翻译：等离子体显示器滤光器包括五个金属层，例如银合金层，具有超过50nm的组合厚度。金属层与电介质层形成交替图案，其中图案中最靠近支撑衬底的层是第一介电层。选择层厚度以通过观察角度的变化，相对中性的透射颜色特性以及相对于红外和电磁辐射的期望的屏蔽特性来实现低反射色移。

8. 发明申请

US20100236628A1 Composition and method of forming an insulating layer in a photovoltaic device 审中-公开
标题翻译：在光伏器件中形成绝缘层的组合物和方法
公开(公告)号：US20100236628A1
公开(公告)日：2010-09-23
申请号：US12382498
申请日：2009-03-17
申请人： Chris Schmidt , Bruce Hachtmann
发明人： Chris Schmidt , Bruce Hachtmann
IPC分类号： H01L31/0328 , H01L31/0272 , C23C14/38
CPC分类号： H01L31/072 , C23C14/086 , C23C14/562 , H01L31/0322 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： A solar cell includes a first electrode located over a substrate, at least one p-type semiconductor absorber layer located over the first electrode, the p-type semiconductor absorber layer comprising a copper indium selenide (CIS) based alloy material, an n-type semiconductor layer located over the p-type semiconductor absorber layer, an insulating aluminum zinc oxide layer located over the n-type semiconductor layer, the insulating aluminum zinc oxide having an aluminum content of 100 ppm to 5000 ppm and a second electrode over the insulating aluminum layer, the second electrode being transparent and electrically conductive. The insulating aluminum zinc oxide having an aluminum content of 100 ppm to 5000 ppm, may be deposited by pulsed DC, non-pulsed DC, or AC sputtering from an aluminum doped zinc oxide having an aluminum content of 100 ppm to 5000 ppm.
摘要翻译：太阳能电池包括位于基板上的第一电极，位于第一电极上方的至少一个p型半导体吸收体层，包含铜铟硒（CIS）基合金材料的p型半导体吸收层，n型位于p型半导体吸收体层上的半导体层，位于n型半导体层上方的绝缘铝氧化锌层，铝含量为100ppm〜5000ppm的绝缘铝氧化锌和绝缘铝上的第二电极层，第二电极是透明和导电的。铝含量为100ppm至5000ppm的绝缘铝氧化锌可以通过脉冲DC，非脉冲DC或AC溅射从铝含量为100ppm至5000ppm的铝掺杂氧化锌中沉积。

9. 发明申请

US20110318941A1 Composition and Method of Forming an Insulating Layer in a Photovoltaic Device 审中-公开
标题翻译：在光伏器件中形成绝缘层的组成和方法
公开(公告)号：US20110318941A1
公开(公告)日：2011-12-29
申请号：US13223826
申请日：2011-09-01
申请人： Chris Schmidt , Bruce Hachtmann
发明人： Chris Schmidt , Bruce Hachtmann
IPC分类号： H01L21/314 , C09D5/25
CPC分类号： H01L31/072 , C23C14/086 , C23C14/562 , H01L31/0322 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： A solar cell includes a first electrode located over a substrate, at least one p-type semiconductor absorber layer located over the first electrode, the p-type semiconductor absorber layer comprising a copper indium selenide (CIS) based alloy material, an n-type semiconductor layer located over the p-type semiconductor absorber layer, an insulating aluminum zinc oxide layer located over the n-type semiconductor layer, the insulating aluminum zinc oxide having an aluminum content of 100 ppm to 5000 ppm and a second electrode over the insulating aluminum layer, the second electrode being transparent and electrically conductive. The insulating aluminum zinc oxide having an aluminum content of 100 ppm to 5000 ppm, may be deposited by pulsed DC, non-pulsed DC, or AC sputtering from an aluminum doped zinc oxide having an aluminum content of 100 ppm to 5000 ppm.
摘要翻译：太阳能电池包括位于基板上的第一电极，位于第一电极上方的至少一个p型半导体吸收体层，包含铜铟硒（CIS）基合金材料的p型半导体吸收层，n型位于p型半导体吸收体层上的半导体层，位于n型半导体层上方的绝缘铝氧化锌层，铝含量为100ppm〜5000ppm的绝缘铝氧化锌和绝缘铝上的第二电极层，第二电极是透明和导电的。铝含量为100ppm至5000ppm的绝缘铝氧化锌可以通过脉冲DC，非脉冲DC或AC溅射从铝含量为100ppm至5000ppm的铝掺杂氧化锌中沉积。

10. 发明授权

US5682416A Method and apparatus communication handover in a communication system 失效
标题翻译：通信系统中的方法和设备通信切换
公开(公告)号：US5682416A
公开(公告)日：1997-10-28
申请号：US437765
申请日：1995-05-09
申请人： Chris Schmidt , Michael D. Kotzin , Barry J. Menich , Eugene J. Bruckert
发明人： Chris Schmidt , Michael D. Kotzin , Barry J. Menich , Eugene J. Bruckert
IPC分类号： H04B7/26 , H04W36/12 , H04W36/18 , H04M11/00 , H04B15/00 , H04Q7/00
CPC分类号： H04W36/12 , H04W36/18
摘要： A method of communication handover from a first communication entity (33) to a second communication entity (43) in a communication system (10) where a communication unit (80), communicating with a transceiver (23) associated with the second communication entity, is linked to the first communication entity. The invention provides for establishing a communication link between the communication unit and the second communication entity while maintaining a communication link between the communication unit and the first communication entitiy. Then, communications are substantially simultaneously transfered to the second communication entity while terminated from the first communication entity.
摘要翻译：一种在通信系统（10）中从第一通信实体（33）到第二通信实体（43）的通信切换的方法，其中通信单元（80）与与第二通信实体相关联的收发器（23）通信，被链接到第一通信实体。本发明提供在通信单元和第二通信实体之间建立通信链路，同时保持通信单元与第一通信业务之间的通信链路。然后，当从第一通信实体终止时，通信基本上同时传送到第二通信实体。

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