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1. 发明申请

US20060255392A1 Transistor including metal-insulator transition material and method of manufacturing the same 审中-公开
标题翻译：包括金属 - 绝缘体过渡材料的晶体管及其制造方法
公开(公告)号：US20060255392A1
公开(公告)日：2006-11-16
申请号：US11432620
申请日：2006-05-12
申请人： Choong-Rae Cho , In-Kyeong Yoo , Yang-Kyu Choi , Sung-Il Cho
发明人： Choong-Rae Cho , In-Kyeong Yoo , Yang-Kyu Choi , Sung-Il Cho
IPC分类号： H01L29/94
CPC分类号： H01L49/003
摘要： A transistor including a metal-insulation transition material and a method of manufacturing the same. The transistor including a metal-insulator transition material may include a substrate, a insulation layer formed on the substrate, a source region and a drain region separately formed from each other on the insulation layer, a tunneling barrier layer formed on at least one surface of the source region and the drain region, a metal-insulator transition material layer formed on the tunneling barrier layer and the insulation layer, a dielectric layer stacked on the metal-insulator transition material layer, and a gate electrode layer formed on the dielectric layer.
摘要翻译：一种包括金属绝缘过渡材料的晶体管及其制造方法。包括金属 - 绝缘体转移材料的晶体管可以包括基板，形成在基板上的绝缘层，在绝缘层上彼此分开形成的源极区域和漏极区域，形成在绝缘层的至少一个表面上的隧道势垒层源极区域和漏极区域，形成在隧道势垒层和绝缘层上的金属 - 绝缘体转移材料层，堆叠在金属 - 绝缘体转移材料层上的电介质层和形成在电介质层上的栅极电极层。

2. 发明授权

US08455854B2 Nonvolatile memory device including amorphous alloy metal oxide layer and method of manufacturing the same 有权
标题翻译：包括非晶合金金属氧化物层的非易失性存储器件及其制造方法
公开(公告)号：US08455854B2
公开(公告)日：2013-06-04
申请号：US11704365
申请日：2007-02-09
申请人： Choong-Rae Cho , Sung-Il Cho , In-Kyeong Yoo , Eun-Hong Lee , Chang-Wook Moon
发明人： Choong-Rae Cho , Sung-Il Cho , In-Kyeong Yoo , Eun-Hong Lee , Chang-Wook Moon
IPC分类号： H01L47/00
CPC分类号： H01L27/2409 , H01L21/31691 , H01L29/47 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory device may include a lower electrode, an oxide layer including an amorphous alloy metal oxide disposed on the lower electrode, and a diode structure disposed on the oxide layer.
摘要翻译：非易失性存储器件可以包括下电极，包括设置在下电极上的非晶合金金属氧化物的氧化物层和设置在氧化物层上的二极管结构。

3. 发明授权

US07439566B2 Semiconductor memory device having metal-insulator transition film resistor 有权
标题翻译：具有金属 - 绝缘体转移膜电阻器的半导体存储器件
公开(公告)号：US07439566B2
公开(公告)日：2008-10-21
申请号：US11485340
申请日：2006-07-13
申请人： Jae-Woong Hyun , In-Kyeong Yoo , Yoon-Dong Park , Choong-Rae Cho , Sung-Il Cho
发明人： Jae-Woong Hyun , In-Kyeong Yoo , Yoon-Dong Park , Choong-Rae Cho , Sung-Il Cho
IPC分类号： H01L29/06
CPC分类号： H01L27/108 , H01L27/101 , H01L27/2436 , H01L45/146
摘要： A semiconductor memory device may have a lower leakage current and/or higher reliability, e.g., a longer retention time and/or a shorter refresh time. The device may include a switching device and a capacitor. A source of the switching device may be connected to a first end of a metal-insulator transition film resistor, and at least one electrode of the capacitor may be connected to a second end of the metal-insulator transition film resistor. The metal-insulator transition film resistor may transition between an insulator and a conductor according to a voltage supplied to the first and second ends thereof.
摘要翻译：半导体存储器件可以具有较低的漏电流和/或更高的可靠性，例如较长的保留时间和/或更短的刷新时间。该装置可以包括开关装置和电容器。开关器件的源极可以连接到金属 - 绝缘体转变膜电阻器的第一端，并且电容器的至少一个电极可以连接到金属 - 绝缘体转变膜电阻器的第二端。金属 - 绝缘体转变膜电阻器可以根据提供给其第一和第二端的电压在绝缘体和导体之间转变。

4. 发明申请

US20070257257A1 Nonvolatile memory device including amorphous alloy metal oxide layer and method of manufacturing the same 有权
标题翻译：包括非晶合金金属氧化物层的非易失性存储器件及其制造方法
公开(公告)号：US20070257257A1
公开(公告)日：2007-11-08
申请号：US11704365
申请日：2007-02-09
申请人： Choong-Rae Cho , Sung-Il Cho , In-Kyeong Yoo , Eun-Hong Lee , Chang-Wook Moon
发明人： Choong-Rae Cho , Sung-Il Cho , In-Kyeong Yoo , Eun-Hong Lee , Chang-Wook Moon
IPC分类号： H01L29/86 , H01L21/34 , H01L29/24
CPC分类号： H01L27/2409 , H01L21/31691 , H01L29/47 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory device may include a lower electrode, an oxide layer including an amorphous alloy metal oxide disposed on the lower electrode, and a diode structure disposed on the oxide layer.
摘要翻译：非易失性存储器件可以包括下电极，包括设置在下电极上的非晶合金金属氧化物的氧化物层和设置在氧化物层上的二极管结构。

5. 发明申请

US20070085122A1 Semiconductor memory device having metal-insulator transition film resistor 有权
标题翻译：具有金属 - 绝缘体转移膜电阻器的半导体存储器件
公开(公告)号：US20070085122A1
公开(公告)日：2007-04-19
申请号：US11485340
申请日：2006-07-13
申请人： Jae-Woong Hyun , In-Kyeong Yoo , Yoon-Dong Park , Choong-Rae Cho , Sung-Il Cho
发明人： Jae-Woong Hyun , In-Kyeong Yoo , Yoon-Dong Park , Choong-Rae Cho , Sung-Il Cho
IPC分类号： H01L29/94
CPC分类号： H01L27/108 , H01L27/101 , H01L27/2436 , H01L45/146
摘要： A semiconductor memory device may have a lower leakage current and/or higher reliability, e.g., a longer retention time and/or a shorter refresh time. The device may include a switching device and a capacitor. A source of the switching device may be connected to a first end of a metal-insulator transition film resistor, and at least one electrode of the capacitor may be connected to a second end of the metal-insulator transition film resistor. The metal-insulator transition film resistor may transition between an insulator and a conductor according to a voltage supplied to the first and second ends thereof.
摘要翻译：半导体存储器件可以具有较低的漏电流和/或更高的可靠性，例如较长的保留时间和/或更短的刷新时间。该装置可以包括开关装置和电容器。开关器件的源极可以连接到金属 - 绝缘体转变膜电阻器的第一端，并且电容器的至少一个电极可以连接到金属 - 绝缘体转变膜电阻器的第二端。金属 - 绝缘体转变膜电阻器可以根据提供给其第一和第二端的电压在绝缘体和导体之间转变。

6. 发明授权

US07414295B2 Transistor and method of operating transistor 失效
标题翻译：晶体管及晶体管工作方式
公开(公告)号：US07414295B2
公开(公告)日：2008-08-19
申请号：US11274475
申请日：2005-11-16
申请人： Choong-Rae Cho , In-Kyeong Yoo , Myoung-Jae Lee
发明人： Choong-Rae Cho , In-Kyeong Yoo , Myoung-Jae Lee
IPC分类号： H01L29/8605 , G11C11/00
CPC分类号： H01L29/685
摘要： A transistor in which a physical property of its channel is changed according to an applied voltage, and methods of manufacturing and operating the same are provided. The transistor may include a first conductive layer on a substrate, a phase change layer and a second conductive layer which are sequentially stacked on the first conductive layer, a first current direction limiting unit and a second current direction limiting unit formed on the second conductive layer by being separated within a space, a third conductive layer and a fourth conductive layer formed on the first current direction limiting unit and the second current direction limiting unit, respectively, a word line connected to the third conductive layer, a bit line connected to the fourth conductive layer, and a voltage lowering unit connected to the word line.
摘要翻译：提供其通道的物理特性根据施加的电压而改变的晶体管，并且提供其制造和操作方法。晶体管可以包括基板上的第一导电层，相继层叠在第一导电层上的相变层和第二导电层，形成在第二导电层上的第一电流方向限制单元和第二电流方向限制单元通过在空间内分离，分别形成在第一电流方向限制单元和第二电流方向限制单元上的第三导电层和第四导电层，连接到第三导电层的字线，连接到第三导电层的位线第四导电层和连接到字线的降压单元。

7. 发明申请

US20060108639A1 Transistor, method of manufacturing transistor, and method of operating transistor 失效
公开(公告)号：US20060108639A1
公开(公告)日：2006-05-25
申请号：US11274475
申请日：2005-11-16
申请人： Choong-Rae Cho , In-Kyeong Yoo , Myoung-Jae Lee
发明人： Choong-Rae Cho , In-Kyeong Yoo , Myoung-Jae Lee
IPC分类号： H01L29/94 , H01L29/76
CPC分类号： H01L29/685
摘要： A transistor in which a physical property of its channel is changed according to an applied voltage, and methods of manufacturing and operating the same are provided. The transistor may include a first conductive layer on a substrate, a phase change layer and a second conductive layer which are sequentially stacked on the first conductive layer, a first current direction limiting unit and a second current direction limiting unit formed on the second conductive layer by being separated within a space, a third conductive layer and a fourth conductive layer formed on the first current direction limiting unit and the second current direction limiting unit, respectively, a word line connected to the third conductive layer, a bit line connected to the fourth conductive layer, and a voltage lowering unit connected to the word line.

8. 发明授权

US07638361B2 Method of manufacturing transistor that utilizes current direction limiting units between phase change layer and bit lines and between phase change layer and word lines 失效
标题翻译：制造晶体管的方法，其利用相变层和位线之间以及相变层和字线之间的电流方向限制单元
公开(公告)号：US07638361B2
公开(公告)日：2009-12-29
申请号：US12216742
申请日：2008-07-10
申请人： Choong-Rae Cho , In-Kyeong Yoo , Myoung-Jae Lee
发明人： Choong-Rae Cho , In-Kyeong Yoo , Myoung-Jae Lee
IPC分类号： H01L21/8239
CPC分类号： H01L29/685
摘要： A transistor in which a physical property of its channel is changed according to an applied voltage, and methods of manufacturing and operating the same are provided. The transistor may include a first conductive layer on a substrate, a phase change layer and a second conductive layer which are sequentially stacked on the first conductive layer, a first current direction limiting unit and a second current direction limiting unit formed on the second conductive layer by being separated within a space, a third conductive layer and a fourth conductive layer formed on the first current direction limiting unit and the second current direction limiting unit, respectively, a word line connected to the third conductive layer, a bit line connected to the fourth conductive layer, and a voltage lowering unit connected to the word line.
摘要翻译：提供其通道的物理特性根据施加的电压而改变的晶体管，并且提供其制造和操作方法。晶体管可以包括基板上的第一导电层，相继层叠在第一导电层上的相变层和第二导电层，形成在第二导电层上的第一电流方向限制单元和第二电流方向限制单元通过在空间内分离，分别形成在第一电流方向限制单元和第二电流方向限制单元上的第三导电层和第四导电层，连接到第三导电层的字线，连接到第三导电层的位线第四导电层和连接到字线的降压单元。

9. 发明申请

US20090186444A1 Transistor, method of manufacturing transistor, and method of operating transistor 失效
标题翻译：晶体管，晶体管的制造方法以及晶体管的工作方法
公开(公告)号：US20090186444A1
公开(公告)日：2009-07-23
申请号：US12216742
申请日：2008-07-10
申请人： Choong-Rae Cho , In-Kyeong Yoo , Myoung-Jae Lee
发明人： Choong-Rae Cho , In-Kyeong Yoo , Myoung-Jae Lee
IPC分类号： H01L21/20
CPC分类号： H01L29/685
摘要： A transistor in which a physical property of its channel is changed according to an applied voltage, and methods of manufacturing and operating the same are provided. The transistor may include a first conductive layer on a substrate, a phase change layer and a second conductive layer which are sequentially stacked on the first conductive layer, a first current direction limiting unit and a second current direction limiting unit formed on the second conductive layer by being separated within a space, a third conductive layer and a fourth conductive layer formed on the first current direction limiting unit and the second current direction limiting unit, respectively, a word line connected to the third conductive layer, a bit line connected to the fourth conductive layer, and a voltage lowering unit connected to the word line.
摘要翻译：提供其通道的物理特性根据施加的电压而改变的晶体管，并且提供其制造和操作方法。晶体管可以包括基板上的第一导电层，相继层叠在第一导电层上的相变层和第二导电层，形成在第二导电层上的第一电流方向限制单元和第二电流方向限制单元通过在空间内分离，分别形成在第一电流方向限制单元和第二电流方向限制单元上的第三导电层和第四导电层，连接到第三导电层的字线，连接到第三导电层的位线第四导电层和连接到字线的降压单元。

10. 发明申请

US20080316807A1 Semiconductor memory device having metal-insulator transition film resistor 审中-公开
公开(公告)号：US20080316807A1
公开(公告)日：2008-12-25
申请号：US12230087
申请日：2008-08-22
申请人： Jae-Woong Hyun , In-Kyeong Yoo , Yoon-Dong Park , Choong-Rae Cho , Sung-II Cho
发明人： Jae-Woong Hyun , In-Kyeong Yoo , Yoon-Dong Park , Choong-Rae Cho , Sung-II Cho
IPC分类号： G11C11/00
CPC分类号： H01L27/108 , H01L27/101 , H01L27/2436 , H01L45/146
摘要： A semiconductor memory device may have a lower leakage current and/or higher reliability, e.g., a longer retention time and/or a shorter refresh time. The device may include a switching device and a capacitor. A source of the switching device may be connected to a first end of a metal-insulator transition film resistor, and at least one electrode of the capacitor may be connected to a second end of the metal-insulator transition film resistor. The metal-insulator transition film resistor may transition between an insulator and a conductor according to a voltage supplied to the first and second ends thereof.

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