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1. 发明授权

US5913147A Method for fabricating copper-aluminum metallization 失效
标题翻译：铜铝金属化方法
公开(公告)号：US5913147A
公开(公告)日：1999-06-15
申请号：US786004
申请日：1997-01-21
申请人： Valery Dubin , Chiu Ting
发明人： Valery Dubin , Chiu Ting
IPC分类号： H01L21/288 , H01L21/768 , H01L23/532 , H01L21/44
CPC分类号： H01L23/53233 , H01L21/288 , H01L21/76877 , H01L23/53238 , H01L2924/0002
摘要： A method for fabricating copper-aluminum metallization utilizing the technique of electroless copper deposition is described. The method provides a self-encapsulated copper-aluminum metallization structure.
摘要翻译：描述了利用无电铜沉积技术制造铜 - 铝金属化的方法。该方法提供了一种自封装的铜 - 铝金属化结构。

2. 发明授权

US5972192A Pulse electroplating copper or copper alloys 失效
标题翻译：脉冲电镀铜或铜合金
公开(公告)号：US5972192A
公开(公告)日：1999-10-26
申请号：US898089
申请日：1997-07-23
申请人： Valery Dubin , Chiu Ting , Robin W. Cheung
发明人： Valery Dubin , Chiu Ting , Robin W. Cheung
IPC分类号： C25D3/38 , C25D5/18 , C25D7/12 , H01L21/288 , H01L21/445
CPC分类号： H01L21/2885 , C25D3/38 , C25D5/18 , C25D7/123
摘要： High aspect ratio openings in excess of 3, such as trenches, via holes or contact holes, in a dielectric layer are voidlessly filled employing a pulse or forward-reverse pulse electroplating technique to deposit copper or a copper-base alloy. A leveling agent is incorporated in the electroplating composition to ensure that the opening is filled substantially sequentially from the bottom upwardly.
摘要翻译：使用脉冲或正向反向脉冲电镀技术无孔地填充电介质层中超过3的高纵横比开口，如沟槽，通孔或接触孔，以沉积铜或铜基合金。在电镀组合物中加入流平剂以确保开口基本上从底部向上填充。

3. 发明授权

US06271591B1 Copper-aluminum metallization 有权
标题翻译：铜铝金属化
公开(公告)号：US06271591B1
公开(公告)日：2001-08-07
申请号：US09312937
申请日：1999-05-17
申请人： Valery Dubin , Chiu Ting
发明人： Valery Dubin , Chiu Ting
IPC分类号： H01L2348
CPC分类号： H01L23/53233 , H01L21/288 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating copper-aluminum metallization utilizing the technique of electroless copper deposition is described. The method provides a self-encapsulated copper-aluminum metallization structure.
摘要翻译：描述了利用无电铜沉积技术制造铜 - 铝金属化的方法。该方法提供了一种自封装的铜 - 铝金属化结构。

4. 发明授权

US5969422A Plated copper interconnect structure 失效
标题翻译：镀铜互连结构
公开(公告)号：US5969422A
公开(公告)日：1999-10-19
申请号：US857129
申请日：1997-05-15
申请人： Chiu Ting , Valery Dubin
发明人： Chiu Ting , Valery Dubin
IPC分类号： H01L21/768 , H01L23/532 , H01L29/45
CPC分类号： H01L21/76874 , H01L21/76843 , H01L21/76846 , H01L21/76873 , H01L23/53233 , H01L23/53238 , H01L2924/0002
摘要： A high conductivity interconnect structure is formed by electroplating or electroless plating of Cu or a Cu-base alloy on a seed layer comprising an alloy of a catalytically active metal, such as Cu, and a refractory metal, such as Ta. The seed layer also functions as a barrier/adhesion layer for the subsequently plated Cu or Cu-base alloy. Another embodiment comprises initially depositing a refractory metal barrier layer before depositing the seed layer.
摘要翻译：通过在包含催化活性金属如Cu的合金和诸如Ta的难熔金属的种子层上电镀或化学镀Cu或Cu基合金来形成高导电性互连结构。种子层还用作随后镀覆的Cu或Cu基合金的阻挡/粘合层。另一个实施方案包括在沉积种子层之前首先沉积难熔金属阻挡层。

5. 发明申请

US20070051306A1 Spatially-arranged chemical processing station 审中-公开
标题翻译：空间化学处理站
公开(公告)号：US20070051306A1
公开(公告)日：2007-03-08
申请号：US11217750
申请日：2005-09-01
申请人： Igor Ivanov , Chiu Ting , Jonathan Zhang
发明人： Igor Ivanov , Chiu Ting , Jonathan Zhang
IPC分类号： B05C13/02 , B05B15/12 , B05B3/00 , B05C5/00
CPC分类号： H01L21/67173 , H01L21/67017 , H01L21/67178 , H01L21/67769
摘要： The present invention discloses a station, e.g., for IC fabrication with a flexible configuration. It consists of an array of processing chambers, which are grouped into processing modules and arranged in a two-dimensional fashion, in vertical levels and horizontal rows, and is capable of operating independent of each other. Each processing chamber can perform electroless deposition and other related processing steps sequentially on a wafer with more than one processing fluid without having to remove it from the chamber. The system is served by a single common industrial robot, which may have a random to access to all the working chambers and cells of the storage unit for transporting wafers between the wafer cassettes and inlet/outlets ports of any of the chemical processing chambers. The station occupies a service-room floor space and a clean-room floor space. The processing modules and the main chemical management unit connected to the local chemical supply unit occupy a service-room floor space, while the robot and the wafer storage cassettes are located in a clean room. Thus, in distinction to the known cluster-tool machines, the station of the invention makes it possible to transfer part of the units from the expensive clean-room area to less-expensive service area.
摘要翻译：本发明公开了一种站，例如用于具有柔性配置的IC制造。它由一系列处理室组成，它们分组成处理模块，并以垂直水平和水平行的二维方式布置，并且能够彼此独立运行。每个处理室可以在具有多于一种处理流体的晶片上顺序地进行无电沉积和其它相关处理步骤，而不必将其从室中移除。该系统由单个通用工业机器人服务，其可以随机访问存储单元的所有工作室和单元，以在晶片盒之间传送晶片和任何化学处理室的入口/出口端口。车站占用服务室的空间和洁净室的空间。连接到本地化学品供应单元的处理模块和主要化学品管理单元占用服务室的空间，而机器人和晶片存储盒位于洁净室中。因此，与已知的集群工具机器不同，本发明的工作站使得可以将部分单元从昂贵的清洁室区域转移到不太昂贵的服务区域。

6. 发明授权

US06939403B2 Spatially-arranged chemical processing station 有权
标题翻译：空间化学处理站
公开(公告)号：US06939403B2
公开(公告)日：2005-09-06
申请号：US10299069
申请日：2002-11-19
申请人： Igor Ivanov , Chiu Ting , Jonathan Weiguo Zhang , Arthur Kolics
发明人： Igor Ivanov , Chiu Ting , Jonathan Weiguo Zhang , Arthur Kolics
IPC分类号： H01L21/00 , H01L21/677 , B05C11/02
CPC分类号： H01L21/67173 , H01L21/67017 , H01L21/67178 , H01L21/67769
摘要： The present invention discloses a station, e.g., for IC fabrication with a flexible configuration. It consists of an array of processing chambers, which are grouped into processing modules and arranged in a two-dimensional fashion, in vertical levels and horizontal rows, and is capable of operating independent of each other. Each processing chamber can perform electroless deposition and other related processing steps sequentially on a wafer with more than one processing fluid without having to remove it from the chamber. The system is served by a single common industrial robot, which may have random access to all the working chambers and cells of the storage unit for transporting wafers between the wafer cassettes and inlet/outlets ports of any of the chemical processing chambers. The station occupies a service-room floor space and a clean-room floor space. The processing modules and the main chemical management unit connected to the local chemical supply unit occupy a service-room floor space, while the robot and the wafer storage cassettes are located in a clean room. Thus, in distinction to the known cluster-tool machines, the station of the invention makes it possible to transfer part of the units from the expensive clean-room area to less-expensive service area.
摘要翻译：本发明公开了一种站，例如用于具有柔性配置的IC制造。它由一系列处理室组成，它们分组成处理模块，并以垂直水平和水平行的二维方式布置，并且能够彼此独立运行。每个处理室可以在具有多于一种处理流体的晶片上顺序地进行无电沉积和其它相关处理步骤，而不必将其从室中移除。该系统由单个通用工业机器人服务，其可以随机访问存储单元的所有工作室和单元，用于在晶片盒之间传送晶片和任何化学处理室的入口/出口端口。车站占用服务室的空间和洁净室的空间。连接到本地化学品供应单元的处理模块和主要化学品管理单元占用服务室的空间，而机器人和晶片存储盒位于洁净室中。因此，与已知的集群工具机器不同，本发明的工作站使得可以将部分单元从昂贵的清洁室区域转移到不太昂贵的服务区域。

7. 发明授权

US06794288B1 Method for electroless deposition of phosphorus-containing metal films onto copper with palladium-free activation 有权
标题翻译：使用无钯活化将含磷金属膜无电沉积到铜上的方法
公开(公告)号：US06794288B1
公开(公告)日：2004-09-21
申请号：US10345134
申请日：2003-05-05
申请人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor C. Ivanov
发明人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor C. Ivanov
IPC分类号： H01L2144
CPC分类号： H01L21/76849 , C23C18/1608 , C23C18/1834 , C23C18/50 , H01L21/288 , H01L21/7685 , H01L21/76855 , H01L21/76874
摘要： The method for selective deposition of Co—W—P system films onto copper with palladium-free activation consists of creating hydrogen-rich complexes on the metal surface prior to deposition. More specifically, the method consists of creating the aforementioned complexes on the copper surfaces prior to electroless deposition of a Co—W—P system films. This is achieved by contacting the copper surface with reducing agents for a short period of time and under an elevated temperature. Such reducing agents comprise a hypophosphorous-acid-based or borane-based reducing agents such as dimethylamine borane. Hypophosphorous acid is preferred since it is more compatible with the electroless deposition solution.
摘要翻译： Co-W-P系膜在铜上选择性沉积无钯活化的方法包括在沉积前在金属表面上产生富含氢的配合物。更具体地，该方法包括在Co-W-P系膜的无电沉积之前在铜表面上产生上述配合物。这是通过使铜表面与还原剂在短时间内和在高温下接触而实现的。这种还原剂包括次磷酸或基于硼烷的还原剂如二甲胺硼烷。次磷酸是优选的，因为它与无电解沉积溶液更相容。

8. 发明申请

US20060076244A1 Barrier enhancement process for copper interconnects 审中-公开
标题翻译：铜互连的屏障增强过程
公开(公告)号：US20060076244A1
公开(公告)日：2006-04-13
申请号：US11289998
申请日：2005-11-30
申请人： Chiu Ting , Igor Ivanov
发明人： Chiu Ting , Igor Ivanov
IPC分类号： C25D7/12 , C25D5/10 , C25D17/00
CPC分类号： H01L21/76843 , H01L21/288 , H01L21/76846 , H01L21/76868 , H01L21/76873 , H01L21/76874 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A damascene process for introducing copper into metallization layers in microelectronic structures includes a step of forming an enhancement layer of a metal alloy, such as a copper alloy or Co—W—P, over the barrier layer, using PVD, CVD or electrochemical deposition prior to electrochemically depositing copper metallization. The enhancement layer has a thickness from 10 Å to 100 Å and conformally covers the discontinuities, seams and grain boundary defects in the barrier layer. The enhancement layer provides a conductive surface onto which a metal layer, such as copper metallization, may be applied with electrochemical deposition. Alternatively, a seed layer may be deposited over the enhancement layer prior to copper metallization.
摘要翻译：用于在微电子结构中将铜引入金属化层的镶嵌工艺包括在电化学上之前使用PVD，CVD或电化学沉积在阻挡层上形成诸如铜合金或Co-WP的金属合金增强层的步骤沉积铜金属化。增强层具有从10到100埃的厚度，并且保形地覆盖阻挡层中的不连续性，接缝和晶界缺陷。增强层提供导电表面，在其上可以用电化学沉积施加金属层，例如铜金属化。或者，在铜金属化之前，种子层可以沉积在增强层上。

9. 发明授权

US06911067B2 Solution composition and method for electroless deposition of coatings free of alkali metals 有权
标题翻译：用于无碱沉积不含碱金属的涂层的溶液组成和方法
公开(公告)号：US06911067B2
公开(公告)日：2005-06-28
申请号：US10339260
申请日：2003-01-10
申请人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor C. Ivanov
发明人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor C. Ivanov
IPC分类号： C23C18/50 , C23C18/52
CPC分类号： C23C18/50
摘要： An electroless deposition solution of the invention for forming an alkali-metal-free coating on a substrate comprises a first-metal ion source for producing first-metal ions, a pH adjuster in the form of a hydroxide for adjusting the pH of the solution, a reducing agent, which reduces the first-metal ions into the first metal on the substrate, a complexing agent for keeping the first-metal ions in the solution, and a source of ions of a second element for generation of second-metal ions that improve the corrosion resistance of the aforementioned coating. The method of the invention consists of the following steps: preparing hydroxides of a metal such as Ni and Co by means of a complexing reaction, in which solutions of hydroxides of Ni and Co are obtained by displacing hydroxyl ions OH− beyond the external boundary of ligands of mono- or polydental complexants; preparing a complex composition based on a tungsten oxide WO3 or a phosphorous tungstic acid, such as H3[P(W3O10)4], as well as on the use of tungsten compounds for improving anti-corrosive properties of the deposited films; mixing the aforementioned solutions of salts of Co, Ni, or W and maintaining under a temperatures within the range of 20° C. to 100° C.; and carrying out deposition from the obtained mixed solution.
摘要翻译：本发明的用于在基材上形成无碱金属的涂层的无电沉积溶液包括用于产生第一金属离子的第一金属离子源，用于调节溶液pH的氢氧化物形式的pH调节剂，还原剂，其将第一金属离子还原成基底上的第一金属，用于将第一金属离子保持在溶液中的络合剂和用于产生第二金属离子的第二元素的离子源，提高上述涂层的耐腐蚀性。本发明的方法包括以下步骤：通过络合反应制备金属如Ni和Co的氢氧化物，其中通过置换羟基离子得到Ni和Co的氢氧化物溶液， SUP>超出单齿或多齿配位体配体的外界; 制备基于氧化钨WO 3或磷钨酸的复合组合物，例如H 3 [P（W 3 N）O _{10），以及使用钨化合物改善沉积膜的抗腐蚀性能; 将上述Co，Ni或W的盐溶液混合并保持在20℃至100℃的温度范围内。并从所得混合溶液中进行沉积。}

10. 发明授权

US06902605B2 Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper 有权
标题翻译：用于沉积钴的无活化无电解液和用于在铜上沉积钴覆盖/钝化层的方法
公开(公告)号：US06902605B2
公开(公告)日：2005-06-07
申请号：US10379692
申请日：2003-03-06
申请人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor Ivanov
发明人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor Ivanov
IPC分类号： C23C18/36 , C23C18/50 , C23C18/34 , B05D1/18
CPC分类号： H01L21/288 , C23C18/36 , C23C18/50 , H01L21/76849
摘要： The present invention relates to compositions and a method for electroless formation of alkaline-metal-free coatings on the basis of cobalt and composition of cobalt with tungsten and phosphorus, which have high resistance to oxidation and stability of electrical characteristics, when the Co—Cu system layer is used in IC chips. The composition of the electroless solution contains more than one reducing agents, one of which can catalyze the initial electroless deposition layer of cobalt on copper (called initiator), while the other maintains deposition of cobalt on the aforementioned initial layer as the process is continued. Small amount (100-5000 ppm) of elements from the initiator also builds into the electroless film, which is expected to further improve the barrier properties of the resultant film compared to the deposition bath without initiator. Such coating may find application in semiconductor manufacturing where properties of deposited films and controllability of the composition and physical and chemical characteristics of the deposited films may be critically important.
摘要翻译：本发明涉及组合物和无碱形成无碱金属的涂层的方法，其中钴和钴与钨和磷的组成具有很高的耐氧化性和电特性的稳定性，当Co-Cu 系统层用于IC芯片。无电溶液的组成包含多于一种还原剂，其中之一可以催化铜上的钴的初始无电沉积层（称为引发剂），而另一种还原剂继续在上述初始层上沉积钴。来自引发剂的少量（100-5000ppm）元素也构成化学镀膜，预期与无引发剂的沉积浴相比，可以进一步提高所得膜的阻隔性能。这种涂层可以应用于半导体制造中，其中沉积膜的性质和组成的可控性以及沉积膜的物理和化学特性可能是至关重要的。

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