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1. 发明申请

US20070262355A1 Pixel with asymmetric transfer gate channel doping 有权
标题翻译：具有不对称传输栅极通道掺杂的像素
公开(公告)号：US20070262355A1
公开(公告)日：2007-11-15
申请号：US11707848
申请日：2007-02-16
申请人： Chintamani Palsule , Changhoon Choi , Fredrick LaMaster , John Stanback , Thomas Dungan , Thomas Joy , Homayoon Haddad
发明人： Chintamani Palsule , Changhoon Choi , Fredrick LaMaster , John Stanback , Thomas Dungan , Thomas Joy , Homayoon Haddad
IPC分类号： H01L27/148
CPC分类号： H01L27/14643 , H01L27/14601 , H01L29/66659 , H01L31/035281
摘要： A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion region of the second conductivity type, a transfer region between the photodetector and the floating diffusion, a gate positioned above the transfer region and partially overlapping the photodetector, and a pinning layer of the first conductivity type extending at least across the photodetector from the gate. A channel implant of the first conductivity type extending from between a midpoint of the transfer gate and the floating diffusion to at least across the photodiode and having a dopant concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than the floating diffusion, and wherein a peak dopant concentration of the channel implant is at a level and at a depth below the surface such that a partially-buried channel is formed in the transfer region between the photodiode and floating diffusion when the transfer gate is energized.
摘要翻译：包括具有第一导电类型并具有表面的衬底的像素，与第一导电类型相反的第二导电类型的光电检测器，第二导电类型的浮动扩散区域，光电检测器和浮动扩散区之间的传输区域位于所述转印区域上方并且部分地与所述光电检测器重叠的栅极以及至少从所述栅极延伸穿过所述光电检测器的所述第一导电类型的钉扎层。第一导电类型的沟道植入物从传输栅极的中点和浮动扩散延伸到至少跨越光电二极管并具有掺杂剂浓度，使得传输区域的掺杂剂浓度在接近光电检测器处比浮置扩散，并且其中沟道注入的峰值掺杂剂浓度处于表面以下的水平和深度，使得当传输栅极通电时，在光电二极管和浮动扩散之间的传输区域中形成部分埋置的沟道。

2. 发明授权

US07834383B2 Pixel with asymmetric transfer gate channel doping 有权
标题翻译：具有不对称传输栅极通道掺杂的像素
公开(公告)号：US07834383B2
公开(公告)日：2010-11-16
申请号：US12481056
申请日：2009-06-09
申请人： Chintamani P. Palsule , Changhoon Choi , Fredrick P. LaMaster , John H. Stanback , Thomas E. Dungan , Thomas Joy , Homayoon Haddad
发明人： Chintamani P. Palsule , Changhoon Choi , Fredrick P. LaMaster , John H. Stanback , Thomas E. Dungan , Thomas Joy , Homayoon Haddad
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14643 , H01L27/14601 , H01L29/66659 , H01L31/035281
摘要： A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion region of the second conductivity type, a transfer region between the photodetector and the floating diffusion, a gate positioned above the transfer region and partially overlapping the photodetector, and a pinning layer of the first conductivity type extending at least across the photodetector from the gate. A channel implant of the first conductivity type extending from between a midpoint of the transfer gate and the floating diffusion to at least across the photodiode and having a dopant concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than the floating diffusion, and wherein a peak dopant concentration of the channel implant is at a level and at a depth below the surface such that a partially-buried channel is formed in the transfer region between the photodiode and floating diffusion when the transfer gate is energized.
摘要翻译：包括具有第一导电类型并具有表面的衬底的像素，与第一导电类型相反的第二导电类型的光电检测器，第二导电类型的浮动扩散区域，光电检测器和浮动扩散区之间的传输区域位于所述转印区域上方并且部分地与所述光电检测器重叠的栅极以及至少从所述栅极延伸穿过所述光电检测器的所述第一导电类型的钉扎层。第一导电类型的沟道植入物从传输栅极的中点和浮动扩散延伸到至少跨越光电二极管并具有掺杂剂浓度，使得传输区域的掺杂剂浓度在接近光电检测器处比浮置扩散，并且其中沟道注入的峰值掺杂剂浓度处于表面以下的水平和深度，使得当传输栅极通电时，在光电二极管和浮动扩散之间的传输区域中形成部分埋置的沟道。

3. 发明申请

US20090250734A1 PIXEL WITH ASYMMETRIC TRANSFER GATE CHANNEL DOPING 有权
标题翻译：具有不对称传输门控通道的像素
公开(公告)号：US20090250734A1
公开(公告)日：2009-10-08
申请号：US12481056
申请日：2009-06-09
申请人： CHINTAMANI P. PALSULE , Changhoon Choi , Fredrick P. LaMaster , John H. Stanback , Thomas E. Dungan , Thomas Joy , Homayoon Haddad
发明人： CHINTAMANI P. PALSULE , Changhoon Choi , Fredrick P. LaMaster , John H. Stanback , Thomas E. Dungan , Thomas Joy , Homayoon Haddad
IPC分类号： H01L31/06
CPC分类号： H01L27/14643 , H01L27/14601 , H01L29/66659 , H01L31/035281
摘要： A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion region of the second conductivity type, a transfer region between the photodetector and the floating diffusion, a gate positioned above the transfer region and partially overlapping the photodetector, and a pinning layer of the first conductivity type extending at least across the photodetector from the gate. A channel implant of the first conductivity type extending from between a midpoint of the transfer gate and the floating diffusion to at least across the photodiode and having a dopant concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than the floating diffusion, and wherein a peak dopant concentration of the channel implant is at a level and at a depth below the surface such that a partially-buried channel is formed in the transfer region between the photodiode and floating diffusion when the transfer gate is energized.
摘要翻译：包括具有第一导电类型并具有表面的衬底的像素，与第一导电类型相反的第二导电类型的光电检测器，第二导电类型的浮动扩散区域，光电检测器和浮动扩散区之间的传输区域位于所述转印区域上方并且部分地与所述光电检测器重叠的栅极以及至少从所述栅极延伸穿过所述光电检测器的所述第一导电类型的钉扎层。第一导电类型的沟道植入物从传输栅极的中点和浮动扩散延伸到至少跨越光电二极管并具有掺杂剂浓度，使得传输区域的掺杂剂浓度在接近光电检测器处比浮置扩散，并且其中沟道注入的峰值掺杂剂浓度处于表面以下的水平和深度，使得当传输栅极通电时，在光电二极管和浮动扩散之间的传输区域中形成部分埋置的沟道。

4. 发明授权

US07557397B2 Pixel with asymmetric transfer gate channel doping 有权
标题翻译：具有不对称传输栅极通道掺杂的像素
公开(公告)号：US07557397B2
公开(公告)日：2009-07-07
申请号：US11707848
申请日：2007-02-16
申请人： Chintamani P. Palsule , Changhoon Choi , Fredrick P. LaMaster , John H. Stanback , Thomas E. Dungan , Thomas Joy , Homayoon Haddad
发明人： Chintamani P. Palsule , Changhoon Choi , Fredrick P. LaMaster , John H. Stanback , Thomas E. Dungan , Thomas Joy , Homayoon Haddad
IPC分类号： H01L31/06 , H01L21/00
CPC分类号： H01L27/14643 , H01L27/14601 , H01L29/66659 , H01L31/035281
摘要： A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion region of the second conductivity type, a transfer region between the photodetector and the floating diffusion, a gate positioned above the transfer region and partially overlapping the photodetector, and a pinning layer of the first conductivity type extending at least across the photodetector from the gate. A channel implant of the first conductivity type extending from between a midpoint of the transfer gate and the floating diffusion to at least across the photodiode and having a dopant concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than the floating diffusion, and wherein a peak dopant concentration of the channel implant is at a level and at a depth below the surface such that a partially-buried channel is formed in the transfer region between the photodiode and floating diffusion when the transfer gate is energized.
摘要翻译：包括具有第一导电类型并具有表面的衬底的像素，与第一导电类型相反的第二导电类型的光电检测器，第二导电类型的浮动扩散区域，光电检测器和浮动扩散区之间的传输区域位于所述转印区域上方并且部分地与所述光电检测器重叠的栅极以及至少从所述栅极延伸穿过所述光电检测器的所述第一导电类型的钉扎层。第一导电类型的沟道植入物从传输栅极的中点和浮动扩散延伸到至少跨越光电二极管并具有掺杂剂浓度，使得传输区域的掺杂剂浓度在接近光电检测器处比浮置扩散，并且其中沟道注入的峰值掺杂剂浓度处于表面以下的水平和深度，使得当传输栅极通电时，在光电二极管和浮动扩散之间的传输区域中形成部分埋置的沟道。

5. 发明申请

US20090017229A1 Processing System Platen having a Variable Thermal Conductivity Profile 审中-公开
标题翻译：具有可变导热曲线的加工系统压板
公开(公告)号：US20090017229A1
公开(公告)日：2009-01-15
申请号：US12143489
申请日：2008-06-20
申请人： Vikram Singh , Richard S. Muka , Timothy J. Miller , Changhoon Choi
发明人： Vikram Singh , Richard S. Muka , Timothy J. Miller , Changhoon Choi
IPC分类号： H05H1/22 , C23C16/00
CPC分类号： H01L21/2236
摘要： A platen for a processing system includes a first and a second thermal region that are separated by at least one boundary. A first fluid conduit is positioned in the first thermal region. A second fluid conduit is positioned in the second thermal region. A fluid reservoir having a first output is coupled to the first fluid conduit and a second output that is coupled to the second fluid conduit. The fluid reservoir provides fluid to the first fluid conduit with first fluid conditions that provides a first thermal conductivity to the first thermal region and provides fluid to the second fluid conduit with second fluid conditions that provides a second thermal conductivity to the second thermal region so that a predetermined thermal conductivity profile is achieved in the platen.
摘要翻译：用于处理系统的压板包括由至少一个边界分开的第一和第二热区域。第一流体管道定位在第一热区域中。第二流体管道定位在第二热区域中。具有第一输出的流体储存器联接到第一流体导管和耦合到第二流体导管的第二输出端。所述流体储存器用第一流体条件向第一流体管道提供流体，所述第一流体条件向第一热区域提供第一热导率，并且向第二流体管道提供流体，其具有向第二热区域提供第二热导率的第二流体条件，在压板中实现预定的导热率分布。

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