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1. 发明申请

US20120208040A1 STRUCTURE OF MULTILAYER CERAMIC DEVICE 失效
标题翻译：多层陶瓷器件的结构
公开(公告)号：US20120208040A1
公开(公告)日：2012-08-16
申请号：US13024470
申请日：2011-02-10
申请人： Ching-Hohn LIEN , Hong-Zong Xu
发明人： Ching-Hohn LIEN , Hong-Zong Xu
IPC分类号： B32B15/02
CPC分类号： H01G4/005 , H01G4/30 , Y10T428/12056
摘要： A multilayer ceramic device comprises a laminated ceramic body having opposite end surfaces, a pair of conductive electrodes each respectively attached to one end surface of the laminated ceramic body and a plurality of alternately staggered internal electrodes within the laminated ceramic body configured in an alternating manner and each electrically connected to the corresponding conductive electrodes respectively; each conductive electrodes of the multilayer ceramic device is further covered with a solder paste layer so that the multilayer ceramic device is thus made without any plating step and no need of treating waste liquid nickel or waste liquid tin as well as no problem of environmental pollution caused by plating solution, thereby lowering manufacturing costs and reducing processing time.
摘要翻译：多层陶瓷器件包括具有相对端面的层叠陶瓷体，分别安装在层叠陶瓷体的一个端面上的一对导电电极和层叠陶瓷体内的多个交错交错的内部电极，其以交替的方式配置和各自电连接到相应的导电电极; 多层陶瓷器件的每个导电电极进一步用焊膏层覆盖，使得多层陶瓷器件因此不经任何电镀步骤而制成，并且不需要处理废液镍或废液锡，并且没有引起环境污染的问题通过电镀液，降低制造成本，缩短加工时间。

2. 发明申请

US20130011963A1 PROCESS FOR PRODUCING ZINC OXIDE VARISTOR 审中-公开
标题翻译：生产氧化锌溶液的方法
公开(公告)号：US20130011963A1
公开(公告)日：2013-01-10
申请号：US13614298
申请日：2012-09-13
申请人： Ching-Hohn LIEN , Jie-An ZHU , Zhi-Xian XU , Hong-Zong XU , Ting-Yi FANG , Xing-Xiang HUANG
发明人： Ching-Hohn LIEN , Jie-An ZHU , Zhi-Xian XU , Hong-Zong XU , Ting-Yi FANG , Xing-Xiang HUANG
IPC分类号： H01L21/02
CPC分类号： C04B35/6261 , C01G9/02 , C01P2002/50 , C01P2002/52 , C01P2002/72 , C04B35/453 , C04B35/62645 , C04B35/64 , C04B2235/3203 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3232 , C04B2235/3239 , C04B2235/3241 , C04B2235/3244 , C04B2235/3251 , C04B2235/3258 , C04B2235/3267 , C04B2235/3272 , C04B2235/3274 , C04B2235/3275 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3291 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/3409 , C04B2235/3418 , C04B2235/36 , C04B2235/42 , C04B2235/5454 , H01C7/112
摘要： A process for producing zinc oxide varistors possessed a property of breakdown voltage (V1mA) ranging from 230 to 1,730 V/mm is to perform the doping of zinc oxide and the sintering of zinc oxide grains with a high-impedance sintered powder through two independent procedures, so that the doped zinc oxide and the high-impedance sintered powder are well mixed in a predetermined ratio and then used to make the zinc oxide varistors through conventional technology by low-temperature sintering (lower than 900° C.); the resultant zinc oxide varistors may use pure silver as inner electrode and particularly possess breakdown voltage ranging from 230 to 1,730 V/mm.
摘要翻译：具有230〜1730V / mm的击穿电压（V1mA）的氧化锌变阻器的制造方法是通过两个独立的程序进行氧化锌的掺杂和氧化锌粒子与高阻抗烧结粉末的烧结，使得掺杂的氧化锌和高阻抗烧结粉末以预定比例充分混合，然后通过低温烧结（低于900℃）的常规技术制造氧化锌变阻器; 所得到的氧化锌变阻器可以使用纯银作为内部电极，特别是具有230至1730V / mm的击穿电压。

3. 发明申请

US20120135563A1 PROCESS FOR PRODUCING MULTILAYER CHIP ZINC OXIDE VARISTOR CONTAINING PURE SILVER INTERNAL ELECTRODES AND FIRING AT ULTRALOW TEMPERATURE 审中-公开
标题翻译：生产含有纯银内电极的多层芯片氧化锌磁体的方法和超导温度
公开(公告)号：US20120135563A1
公开(公告)日：2012-05-31
申请号：US13298458
申请日：2011-11-17
申请人： Ching-Hohn LIEN , Jie-An ZHU
发明人： Ching-Hohn LIEN , Jie-An ZHU
IPC分类号： H01L21/02
CPC分类号： H01C7/112 , H01C7/18
摘要： A low-temperature firing process is available for cost saving to produce a multilayer chip ZnO varistor containing pure silver (Ag) formed as internal electrodes and calcined at ultralow firing temperature of 850-900° C., which process comprises: a) individually preparing ZnO grains in advance doped with doping ions for promotion of semi-conductivity of ZnO grains if calcined; b) individually preparing a desired high-impedance sintering material to be fired as grain boundaries to encapsulate ZnO grains; c) mixing the doped ZnO grains of Step a) with the high-impedance sintering material of Step b) in a predetermined ratio to form a mixture and proceeding with an initial sintering to have the mixture sintered and ground as composite ZnO ceramic powders, and d) processing the sintered mixture of Step c) to make multilayer chip ZnO varistors containing pure silver (Ag) internal electrodes but sintered at ultralow firing temperature of 850-900° C.
摘要翻译：低成本焙烧工艺可以节约成本，生产出一种含有形成内部电极的纯银（Ag）的多层芯片ZnO压敏电阻，并在850-900℃的超低烧结温度下煅烧，该方法包括：a）单独制备预先掺杂掺杂离子的ZnO晶粒，如果煅烧，则促进ZnO晶粒的半导电性; b）单独制备待烧结的期望的高阻抗烧结材料作为晶界以包封ZnO颗粒; c）将步骤a）的掺杂ZnO晶粒与步骤b）的高阻抗烧结材料以预定比例混合，形成混合物，并进行初始烧结，将混合物烧结并研磨为复合ZnO陶瓷粉末; d）加工步骤c）的烧结混合物以制备含有纯银（Ag）内部电极但在850-900℃的超低烧结温度下烧结的多层片状ZnO压敏电阻

4. 发明申请

US20130133183A1 PROCESS FOR PRODUCING ZINC OXIDE VARISTOR HAVING HIGH POTENTIAL GRADIENT AND HIGH NON-LINEARITY COEFFICIENT 审中-公开
标题翻译：生产具有高潜能梯度和高非线性系数的氧化锌系列的方法
公开(公告)号：US20130133183A1
公开(公告)日：2013-05-30
申请号：US13609508
申请日：2012-09-11
申请人： Ching-Hohn LIEN , Jie-An ZHU
发明人： Ching-Hohn LIEN , Jie-An ZHU
IPC分类号： H01C7/02
CPC分类号： C04B35/453 , C01G9/02 , C01P2002/54 , C04B35/624 , C04B35/62805 , C04B35/62807 , C04B35/6281 , C04B35/62813 , C04B35/62815 , C04B35/62818 , C04B35/62821 , C04B35/62823 , C04B35/62826 , C04B2235/3203 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3232 , C04B2235/3239 , C04B2235/3241 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3262 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/3409 , C04B2235/3418 , C04B2235/44 , C04B2235/442 , C04B2235/443 , C04B2235/449 , C04B2235/85 , H01C7/112 , H01C17/06546 , Y10T29/49085
摘要： A process for producing zinc oxide varistor is disclosed to allow that one step of having zinc oxide grains doped with non-equivalent ions and sufficiently semiconductorized and the other one step of preparing sintered powders having property of high-impedance are prepared by two separate procedures respectively, resulted in that the zinc oxide varistor produced by the process features both a high potential gradient and a high non-linearity coefficient; and more particularly the disclosed process is suited for producing a specific zinc oxide varistor whose potential gradient ranges from 2,000 to 9000 V/mm as well as non-linearity coefficient (α) ranges from 21.5 to 55.
摘要翻译：公开了一种生产氧化锌压敏电阻的方法，可以分别通过两个独立的程序制备具有掺杂有非等效离子并充分半导体化的氧化锌晶粒和制备具有高阻抗特性的烧结粉末的另一步骤导致由该工艺生产的氧化锌压敏电阻具有高电位梯度和高非线性系数; 更具体地说，所公开的方法适用于制造其电位梯度为2,000至9000V / mm的特定氧化锌变阻器以及非线性系数（α）为21.5至55。

5. 发明申请

US20120057265A1 ZINC-OXIDE SURGE ARRESTER FOR HIGH-TEMPERATURE OPERATION 有权
标题翻译：用于高温操作的氧化锌冲击回收器
公开(公告)号：US20120057265A1
公开(公告)日：2012-03-08
申请号：US13023624
申请日：2011-02-09
申请人： Ching-Hohn LIEN , Jie-An Zhu , Zhi-Xian Xu , Xing-Xiang Huang , Ting-Yi Fang
发明人： Ching-Hohn LIEN , Jie-An Zhu , Zhi-Xian Xu , Xing-Xiang Huang , Ting-Yi Fang
IPC分类号： H02H1/00
CPC分类号： H01C7/112 , H01C7/10 , H01C7/12
摘要： A ZnO surge arrester for high-temperature operation is characterized in that a grain boundary layer between ZnO grains thereof contains a BaTiO3-based positive temperature coefficient thermistor material, which takes 10-85 mol % in the overall grain boundary layer, and when operating temperature raises, the positive temperature coefficient thermistor material in the grain boundary layer has its resistance sharply increasing with the raising temperature, so as to compensate or partially compensate decrease in resistance of components in the grain boundary layer caused by the raising temperature, thereby making the resistance of the grain boundary layer in the ZnO surge arrester more independent of temperature. The ZnO surge arrester thus is suitable for operation where a maximum operating temperature is higher than 125° C., or even higher than 150° C.
摘要翻译：用于高温操作的ZnO避雷器的特征在于，其ZnO晶粒之间的晶界层包含基于BaTiO 3的正温度系数热敏电阻材料，其在整个晶界层中占据10-85mol％，并且当工作温度升温时，晶界层中的正温度系数热敏电阻材料的电阻随着升温而急剧上升，从而补偿或部分补偿由升温引起的晶界层中的组分的电阻降低，从而使电阻的ZnO避雷器中的晶界层更加独立于温度。因此，ZnO避雷器适用于最高工作温度高于125℃或甚至高于150℃的操作。

6. 发明申请

US20110276488A1 METHOD OF CREDIT CARD TRANSACTION AUTHORIZATION USING VOIPOW TECHNIQUE 审中-公开
标题翻译：信用卡交易授权使用VOIPOW技术的方法
公开(公告)号：US20110276488A1
公开(公告)日：2011-11-10
申请号：US13094971
申请日：2011-04-27
申请人： Ching-Hohn LIEN
发明人： Ching-Hohn LIEN
IPC分类号： G06Q20/00 , G06Q30/00
CPC分类号： G06Q20/00 , G06Q20/40
摘要： A method of credit card transaction authorization using VoIPoW phone is provided to efficiently and economically perform authorization by both recognizing a credit card and identifying a holder of the credit card, which key feature of the method is that the VoIPoW phone is independent of environmental barriers, time as well as space limitations and communication costs, and a real-time intercommunication between a card holder and a relevant card issuing bank through VoIPoW phone can be performed to effectively preclude credit card fraud.
摘要翻译：提供使用VoIPoW电话的信用卡交易授权的方法，通过识别信用卡和识别信用卡的持有者来有效和经济地执行授权，该方法的关键特征是VoIPoW电话独立于环境屏障，时间以及空间限制和通信成本，并且可以执行通过VoIPoW电话的持卡人和相关的发卡银行之间的实时互通，以有效地排除信用卡欺诈。

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