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    • 7. 发明授权
    • Method of forming a metal fuse on semiconductor devices
    • 在半导体器件上形成金属熔断器的方法
    • US06835642B2
    • 2004-12-28
    • US10323350
    • 2002-12-18
    • Chao-Hsiang YangChun-Ming Su
    • Chao-Hsiang YangChun-Ming Su
    • H01L2144
    • H01L23/5258H01L2924/0002H01L2924/00
    • A method of forming a metal fuse in a semiconductor device. In one embodiment, a specific additional mask is applied to form the metal fuse to reduce the thickness of the fuse. The method also includes forming a fuse window opening that is very shallow in the semiconductor device. The shallower opening allows for better control and removal of the remaining passivation left over the fuse during a fuse burning laser process. The thinner fuse and the thinner remaining passivation reduce the amount of laser energy required to vaporize the oxide and to cut the fuse. The location of the fuse also greatly enlarges the laser energy window that can be utilized to make laser repairs. The larger energy window results in a higher laser repair success ratio even if some deviation in the fabrication process occurs.
    • 一种在半导体器件中形成金属熔丝的方法。 在一个实施例中,施加特定的附加掩模以形成金属熔丝以减小熔丝的厚度。 该方法还包括在半导体器件中形成非常浅的保险丝窗口。 较浅的开口允许在保险丝燃烧激光过程期间更好地控制和去除留在熔丝上的剩余钝化物。 更薄的保险丝和更薄的剩余钝化减少了蒸发氧化物和切断保险丝所需的激光能量。 保险丝的位置也大大增加了可用于激光修复的激光能量窗。 即使制造过程中出现某些偏差,较大的能量窗也会导致更高的激光修复成功率。