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1. 发明授权

US06496428B2 Semiconductor memory 失效
标题翻译：半导体存储器
公开(公告)号：US06496428B2
公开(公告)日：2002-12-17
申请号：US09964642
申请日：2001-09-28
申请人： Chikai Ohno , Hirokazu Yamazaki , Hideaki Suzuki
发明人： Chikai Ohno , Hirokazu Yamazaki , Hideaki Suzuki
IPC分类号： G11C700
CPC分类号： G11C29/789 , G11C29/84 , G11C29/846
摘要： A redundancy information region having memory cells for retaining relief information indicating the locations of defective memory cells is arranged closer to at least one of a word driver or a plate driver than a memory cell region and a redundancy memory cell region. Since the memory cells of the redundancy information region start operation earlier, a relief/no-relief judgment can be made earlier, allowing reduction in access time. Besides, in memory cell operations, the defective memory cells are deselected in accordance with address information held in a redundancy address region. Redundancy memory cells for relieving the defective memory cells are selected in accordance with the relief information held in a redundancy flag region. Since the redundancy memory cells are selected without using the address information, it is possible to reduce the time that elapses before the redundancy memory cells are selected after the selection of word lines.
摘要翻译：具有用于保存指示有缺陷存储单元的位置的释放信息的存储单元的冗余信息区被布置成比存储单元区域和冗余存储单元区域更靠近字驱动器或板驱动器中的至少一个。由于冗余信息区域的存储单元早期开始操作，因此可以更早地进行缓解/不缓解判断，从而允许访问时间减少。此外，在存储单元操作中，根据保存在冗余地址区域中的地址信息来取消选择不良存储单元。根据保存在冗余标志区域中的补救信息来选择用于解除有缺陷的存储器单元的冗余存储单元。由于在不使用地址信息的情况下选择冗余存储单元，所以可以在选择字线之后减少冗余存储单元之前经过的时间。

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