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    • 1. 发明授权
    • Image sensor with noise reduction and diminishment of residual images
    • 图像传感器具有降噪和减少残留图像
    • US5243177A
    • 1993-09-07
    • US912996
    • 1992-07-14
    • Hiroshi FujimagariChikaho IkedaJunji Okada
    • Hiroshi FujimagariChikaho IkedaJunji Okada
    • H01L21/205H01L27/146H01L31/10H04N1/028
    • H01L27/14643
    • An image sensor capable of reading with high sensitivity at high speed, in which each light-receiving element consists of two photodiodes PD1 and PD2, which comprise a transparent substrate 1, a metal electrode 2, photoelectric transducing layers 3a and 3b, transparent electrodes 4a and 4b and an insulating layer 5, which layers are formed in superposition and patterned to provide PD1 and PD2 that are interconnected in such a way that the relationship of polarities of one photodiode is reverse to that of the other photodiode. The transparent electrode 4a of photodiode PD1 is connected to a common electrode wiring 7 (typically made of aluminum) via a contact hole 6a formed in the insulating layer 5, whereas the transparent electrode 4b of photodiode PD2 is connected to a lead wiring 8 (typically made of aluminum) via a contact hole 6b also formed in the insulating layer 5. The metal electrode 2 inter-connecting the photodiodes PD1 and PD2 is so specified in position that it is located only in an area that is capable of light reception.
    • 一种能够高灵敏度读取的图像传感器,其中每个光接收元件由包括透明基板1,金属电极2,光电转换层3a和3b的两个光电二极管PD1和PD2组成,透明电极4a 4b和绝缘层5,这些层叠加形成并图案化以提供PD1和PD2,PD1和PD2以这样的方式相互连接,使得一个光电二极管的极性与另一个光电二极管的极性相反。 光电二极管PD1的透明电极4a通过形成在绝缘层5中的接触孔6a连接到公共电极布线7(通常由铝制成),而光电二极管PD2的透明电极4b连接到引线布线8 通过也形成在绝缘层5中的接触孔6b,将光电二极管PD1和PD2相互连接的金属电极2的位置确定为仅位于能够接收光的区域。
    • 3. 发明授权
    • Image sensor having dual shift registers and a plurality of capacitors
    • 具有双移位寄存器和多个电容器的图像传感器
    • US5235174A
    • 1993-08-10
    • US751769
    • 1991-08-29
    • Chikaho IkedaHiroshi Fujimagari
    • Chikaho IkedaHiroshi Fujimagari
    • H04N1/028H01L27/146
    • H04N5/3692H01L27/14643H04N5/363
    • An image sensor having a linear array of a plurality of photodetecting element groups each including a plurality of photodetecting elements each consisting of first and second photo diodes connected in series and oppositely in polarity, in which read pulses are applied sequentially to the second photo diodes of the photodetecting elements of each photodetecting element group by a matrix drive system, and image signals are read by a read circuit connected to the first photo diodes of the photodetecting elements. In the image sensor, first capacitor portions are connected to the second photo diodes of the photodetecting elements. A first shift register is connected to the first capacitor portions for each photodetecting element group. The first shift register sequentially applies drive pulses to the photodetecting element groups. Second capacitor portions are connected to the second photo diodes of the photodetecting elements. A second shift register is connected to the second capacitor portions in a matrix fashion. The second shift register sequentially applies read pulses to the respective photodetecting elements. A leak unit is coupled with the second photo diodes of the photodetecting elements.
    • 一种具有多个光电元件组的线阵列的图像传感器,每个光电检测元件组包括多个光电元件,每个光电检测元件由串联连接并且相反极性的第一和第二光电二极管组成,其中读脉冲依次施加到第二光电二极管的第二光电二极管 通过矩阵驱动系统的每个光电检测元件组的光电检测元件和图像信号由连接到受光元件的第一光电二极管的读取电路读取。 在图像传感器中,第一电容器部分连接到受光元件的第二光电二极管。 第一移位寄存器连接到每个受光元件组的第一电容器部分。 第一移位寄存器顺序地向光电检测元件组施加驱动脉冲。 第二电容器部分连接到受光元件的第二光电二极管。 第二移位寄存器以矩阵方式连接到第二电容器部分。 第二移位寄存器依次对各个受光元件施加读取脉冲。 泄漏单元与受光元件的第二光电二极管耦合。
    • 6. 发明授权
    • Image sensor
    • 图像传感器
    • US5308969A
    • 1994-05-03
    • US957003
    • 1992-10-06
    • Junji OkadaHiroshi Fujimagari
    • Junji OkadaHiroshi Fujimagari
    • H01L27/146H01L31/10H01L31/108H01L31/20H04N1/028H01J40/14
    • H01L27/14643H01L31/108H01L31/202Y02E10/50
    • An image sensor is provided with a plurality of photodiodes each having a better forward-current responsiveness and a smaller dark current in the reverse direction. Each of the photodiodes includes a two-layered photoelectric conversion layer made of non-doped hydrogenated amorphous silicon. One of these two layers, which has an interface that prevents electrons from escaping when photogenerated electric charge is stored, is deposited at a lower temperature than the other. The photodiodes are arranged in rows on a transparent electrode. The photodiodes operate in pairs, each pair corresponding to one picture element and having a first photodiode connected to a second photodiode in series, with opposite polarity. All the first photodiodes are connected to a detecting circuit and all the second photodiodes are connected to a pulse generating circuit.
    • 图像传感器设置有多个光电二极管,每个光电二极管在相反方向上具有更好的正向电流响应性和较小的暗电流。 每个光电二极管包括由非掺杂氢化非晶硅制成的双层光电转换层。 当存储光生电荷时,具有防止电子逸出的这两个层中的一个沉积在比另一层更低的温度下。 光电二极管在透明电极上排列成行。 光电二极管成对地工作,每一对对应于一个像素并具有相反极性的串联连接到第二光电二极管的第一光电二极管。 所有第一光电二极管连接到检测电路,所有第二光电二极管连接到脉冲发生电路。