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1. 发明授权

US07701183B2 Power circuit and charge pumping circuit 失效
标题翻译：电源电路和电荷泵电路
公开(公告)号：US07701183B2
公开(公告)日：2010-04-20
申请号：US11866739
申请日：2007-10-03
申请人： Chih-Yuan Hsieh , Jiunn-Way Miaw
发明人： Chih-Yuan Hsieh , Jiunn-Way Miaw
IPC分类号： G05F1/40 , G05F3/02
CPC分类号： G05F1/56 , H02M3/07 , H02M2001/0045
摘要： A power circuit and a charge pumping circuit add one control switch of small size to control a power transistor, and save one switch of large area and one capacitor of large area as compared with a conventional power circuit and a conventional charge pumping circuit. The power circuit includes a power processing circuit, a linear voltage-regulating switch, and a capacitor. The linear voltage-regulating switch includes a power transistor and a control switch. The control switch has a first end coupled to a gate of the power transistor and a second end coupled to one of a drain and a source of the power transistor. When the control switch is “on”, the power transistor is “off”. When the control switch is “off”, the voltage on the drain of the power transistor is maintained at a predetermined value by the linear voltage-regulating switch.
摘要翻译：电源电路和电荷泵浦电路加上一个小尺寸的控制开关来控制功率晶体管，与常规电源电路和常规电荷泵浦电路相比，可以节省大面积的一个开关和大面积的一个电容器。电源电路包括功率处理电路，线性电压调节开关和电容器。线性电压调节开关包括功率晶体管和控制开关。控制开关具有耦合到功率晶体管的栅极的第一端和耦合到功率晶体管的漏极和源极之一的第二端。当控制开关为“开”时，功率晶体管为“关”。当控制开关“关闭”时，功率晶体管的漏极上的电压通过线性电压调节开关保持在预定值。

2. 发明申请

US20080143308A1 POWER CIRCUIT AND CHARGE PUMPING CIRCUIT 失效
标题翻译：电源电路和充电泵电路
公开(公告)号：US20080143308A1
公开(公告)日：2008-06-19
申请号：US11866739
申请日：2007-10-03
申请人： Chih-Yuan Hsieh , Jiunn-Way Miaw
发明人： Chih-Yuan Hsieh , Jiunn-Way Miaw
IPC分类号： G05F1/44 , G05F1/10
CPC分类号： G05F1/56 , H02M3/07 , H02M2001/0045
摘要： A power circuit and a charge pumping circuit add one control switch of small size to control a power transistor, and save one switch of large area and one capacitor of large area as compared with a conventional power circuit and a conventional charge pumping circuit. The power circuit includes a power processing circuit, a linear voltage-regulating switch, and a capacitor. The linear voltage-regulating switch includes a power transistor and a control switch. The control switch has a first end coupled to a gate of the power transistor and a second end coupled to one of a drain and a source of the power transistor. When the control switch is “on”, the power transistor is “off”. When the control switch is “off”, the voltage on the drain of the power transistor is maintained at a predetermined value by the linear voltage-regulating switch.
摘要翻译：电源电路和电荷泵浦电路加上一个小尺寸的控制开关来控制功率晶体管，与常规电源电路和常规电荷泵浦电路相比，可以节省大面积的一个开关和大面积的一个电容器。电源电路包括功率处理电路，线性电压调节开关和电容器。线性电压调节开关包括功率晶体管和控制开关。控制开关具有耦合到功率晶体管的栅极的第一端和耦合到功率晶体管的漏极和源极之一的第二端。当控制开关为“开”时，功率晶体管为“关”。当控制开关“关闭”时，功率晶体管的漏极上的电压通过线性电压调节开关保持在预定值。

3. 发明授权

US06614061B2 Electrostatic discharge-protection semiconductor device 失效
公开(公告)号：US06614061B2
公开(公告)日：2003-09-02
申请号：US09782719
申请日：2001-02-13
申请人： Jiunn-Way Miaw
发明人： Jiunn-Way Miaw
IPC分类号： H01L31111
CPC分类号： H01L27/0262
摘要： The present invention provides an electrostatic discharge-protection device located between a pad and a specific voltage point. The electrostatic discharge-protection device has a P-type substrate. Then a first N-type well, a first P-type doped region, and a first N-type doped region, are formed on the P-type substrate, wherein the first P-type doped region and the first N-type doped region are coupled to the specific voltage point, respectively. A second P-type doped region and a second N-type doped region are formed on the first N-type well and are coupled to the pad, respectively. Moreover, a third N-type doped region and a fourth N-type doped region are formed on the P-type substrate. The third N-type doped region is coupled to the pad, and a second N-type well is formed between the third N-type doped region and the fourth N-type doped region.

4. 发明授权

US06757148B2 Electro-static discharge protection device for integrated circuit inputs 失效
标题翻译：用于集成电路输入的静电放电保护装置
公开(公告)号：US06757148B2
公开(公告)日：2004-06-29
申请号：US10123411
申请日：2002-04-17
申请人： Jiunn-Way Miaw
发明人： Jiunn-Way Miaw
IPC分类号： H02H900
CPC分类号： H01L27/0266
摘要： ESD protection device for integrated circuit includes: A MOS transistor is connected between a supply potential and a ground potential for PD and ND ESD modes. A first-level protection device, such as a field oxide device, has an input terminal coupled to the input pad and an output terminal coupled to the ground potential. The output terminal of the first-level protection device is shared with the MOS transistor for saving layout area. The first-level protection device provides passing the ESD current from the input pad into the MOS transistor when the ground potential is floating.
摘要翻译：用于集成电路的ESD保护器件包括：MOS晶体管连接在PD和ND ESD模式的电源电位和地电位之间。诸如场氧化物装置的第一级保护装置具有耦合到输入焊盘的输入端和耦合到地电位的输出端。第一级保护装置的输出端子与MOS晶体管共享以节省布局面积。当地电位浮动时，第一级保护器件将ESD电流从输入焊盘传递到MOS晶体管。

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