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1. 发明申请

US20120090676A1 THIN-FILM SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜太阳能电池及其制造方法
公开(公告)号：US20120090676A1
公开(公告)日：2012-04-19
申请号：US13331100
申请日：2011-12-20
申请人： Chih-Hsiung Lin , Yu-Tsang Chien , Chih-Hsiung Chang , Kun-Chih Lin , Yueh-Hsun Lee
发明人： Chih-Hsiung Lin , Yu-Tsang Chien , Chih-Hsiung Chang , Kun-Chih Lin , Yueh-Hsun Lee
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/022466 , H01L31/075 , H01L31/1884 , Y02E10/548
摘要： A thin-film solar cell and a method for manufacturing the same are presented, in which the dopant concentration turns low in a sloping way. The solar cell includes a substrate, a first contact region, a photoelectric conversion layer, and a second contact region. The first contact region a photoelectric conversion layer, and a second contact region are disposed on the substrate. At least one of the first contact region and the second contact region contains an N-type dopant, and the concentration of the N-type dopant is decreased gradually in a direction towards the photoelectric conversion layer. Through the thin-film solar cell and the method for manufacturing the same, the conversion efficiency of the solar cell is improved, and the thin-film solar cell and the manufacturing method are capable of being integrated with an existing manufacturing process of a solar cell, thereby simplifying the manufacturing process and reducing the cost.
摘要翻译：提出了一种薄膜太阳能电池及其制造方法，其中掺杂剂浓度以倾斜方式变低。太阳能电池包括基板，第一接触区域，光电转换层和第二接触区域。第一接触区域是光电转换层，第二接触区域设置在基板上。第一接触区域和第二接触区域中的至少一个包含N型掺杂剂，并且N型掺杂剂的浓度在朝向光电转换层的方向上逐渐减小。通过薄膜太阳能电池及其制造方法，提高了太阳能电池的转换效率，并且薄膜太阳能电池和制造方法能够与现有的太阳能电池的制造工艺相结合，从而简化制造过程并降低成本。

2. 发明申请

US20120204936A1 COLOR BUILDING-INTEGRATED PHOTOVOLTAIC (BIPV) PANEL 审中-公开
标题翻译：彩色建筑一体化（BIPV）面板
公开(公告)号：US20120204936A1
公开(公告)日：2012-08-16
申请号：US13329099
申请日：2011-12-16
申请人： Chin-Yao Tsai , Yi-Kai Lin , I-Heng Tseng , Chih-Hsiung Chang , Kun-Chih Lin
发明人： Chin-Yao Tsai , Yi-Kai Lin , I-Heng Tseng , Chih-Hsiung Chang , Kun-Chih Lin
IPC分类号： H01L31/052 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/03921 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/0468 , Y02A30/62 , Y02B10/12 , Y02E10/50
摘要： In one aspect of the present invention, a photovoltaic panel includes a substrate, a reflective layer formed on the substrate, a first conductive layer formed on the reflective layer, an active layer formed on the first conductive layer, and a second conductive layer formed on the active layer. The reflective layer has an index of refraction and a thickness such that the reflectance spectrum of the photovoltaic device for light incident on the substrate has a maximum in a selected wavelength range in the visible spectrum.
摘要翻译：在本发明的一个方面中，光伏面板包括基板，形成在基板上的反射层，形成在反射层上的第一导电层，形成在第一导电层上的有源层，以及形成在第一导电层上的第二导电层活动层。反射层具有折射率和厚度，使得入射到基板上的光的光电器件的反射光谱在可见光谱中在选定的波长范围内具有最大值。

3. 发明申请

US20120227782A1 LOW VOLTAGE THIN FILM PHOTOVOLTAIC MODULE 审中-公开
标题翻译：低电压薄膜光伏模块
公开(公告)号：US20120227782A1
公开(公告)日：2012-09-13
申请号：US13046471
申请日：2011-03-11
申请人： Chin-Yao Tsai , Yu-Chun Peng , Po-Han Lin , Yi-Kai Lin , Chen-Liang Liao , Chih-Hsiung Chang , Kun-Chih Lin
发明人： Chin-Yao Tsai , Yu-Chun Peng , Po-Han Lin , Yi-Kai Lin , Chen-Liang Liao , Chih-Hsiung Chang , Kun-Chih Lin
IPC分类号： H01L31/05
CPC分类号： H01L31/05 , H01L31/0201 , H01L31/046 , Y02E10/50
摘要： In one aspect of the present invention, a photovoltaic module includes a plurality of sub-modules. Each sub-module includes a plurality of photovoltaic cells spatially arranged as an array, each cell having first and second conductive layers sandwiching an active layer therebetween. The cells in each sub-module are electrically connected to each other in series. Each sub-module further includes positive and negative electrodes formed on the second conductive layers of the first and last cells, respectively, in a respective sub-module. The positive electrode of each sub-module is electrically connected to each other and the negative electrode of each sub-module is electrically connected to each other such that the plurality of sub-modules is electrically connected in parallel. The plurality of sub-modules is spatially arranged next to each other as an array such that at least one sub-module is spatially separated from its immediately next sub-module by a gap.
摘要翻译：在本发明的一个方面，光伏组件包括多个子模块。每个子模块包括空间上排列成阵列的多个光伏电池，每个电池具有夹在其间的活性层的第一和第二导电层。每个子模块中的单元彼此串联电连接。每个子模块还包括在相应的子模块中分别形成在第一和最后单元的第二导电层上的正极和负极。每个子模块的正电极彼此电连接，并且每个子模块的负电极彼此电连接，使得多个子模块并联电连接。多个子模块在空间上彼此相邻布置为阵列，使得至少一个子模块与其紧邻的下一个子模块在空间上与间隙分离。

4. 发明申请

US20120103413A1 THIN-FILM SOLAR CELL AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：薄膜太阳能电池及其制造方法
公开(公告)号：US20120103413A1
公开(公告)日：2012-05-03
申请号：US13347969
申请日：2012-01-11
申请人： Chin-Yao Tsai , Chih-Wei Chang , Ching-In Wu , Kai-Hsiang Chuang , Chih-Hsiung Chang , Kun-Chih Lin
发明人： Chin-Yao Tsai , Chih-Wei Chang , Ching-In Wu , Kai-Hsiang Chuang , Chih-Hsiung Chang , Kun-Chih Lin
IPC分类号： H01L31/02 , H01L31/18
CPC分类号： H01L31/03767 , C07C211/04 , C07C211/05 , H01L31/048 , H01L31/1864 , Y02E10/50 , Y02P70/521
摘要： A thin-film solar cell includes a body and a polymer layer. The body includes a first electrode layer, a photoelectric conversion layer, and a second electrode layer, and the polymer layer includes a hardening material and an interface material. The photoelectric conversion layer is disposed between the first electrode layer and the second electrode layer, and the polymer layer surrounds the photoelectric conversion layer, in which the interface material is used for bonding to the hardening material and the photoelectric conversion layer respectively. Therefore, the thin-film solar cell may reduce the Staebler-Wronski Effect generated by the photoelectric conversion layer in the photoelectric conversion procedure. Accordingly, the photoelectric conversion efficiency is improved.
摘要翻译：薄膜太阳能电池包括主体和聚合物层。主体包括第一电极层，光电转换层和第二电极层，聚合物层包括硬化材料和界面材料。光电转换层设置在第一电极层和第二电极层之间，聚合物层围绕光电转换层，其中界面材料分别用于与硬化材料和光电转换层接合。因此，薄膜太阳能电池可以减少由光电转换层产生的Staebler-Wronski效应。因此，提高了光电转换效率。

5. 发明授权

US08088990B1 Color building-integrated photovoltaic (BIPV) panel 失效
标题翻译：彩色建筑一体化光伏（BIPV）面板
公开(公告)号：US08088990B1
公开(公告)日：2012-01-03
申请号：US13118110
申请日：2011-05-27
申请人： Chin-Yao Tsai , Yi-Kai Lin , I-Heng Tseng , Chih-Hsiung Chang , Kun-Chih Lin
发明人： Chin-Yao Tsai , Yi-Kai Lin , I-Heng Tseng , Chih-Hsiung Chang , Kun-Chih Lin
IPC分类号： H01L31/042
CPC分类号： H01L31/02167 , H01L31/03921 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/0468 , Y02A30/62 , Y02B10/12 , Y02E10/50
摘要： In one aspect of the present invention, a photovoltaic panel includes a substrate, a reflective layer formed on the substrate, a first conductive layer formed on the reflective layer, an active layer formed on the first conductive layer, and a second conductive layer formed on the active layer. The reflective layer has an index of refraction and a thickness such that the reflectance spectrum of the photovoltaic device for light incident on the substrate has a maximum in a selected wavelength range in the visible spectrum.
摘要翻译：在本发明的一个方面中，光伏面板包括基板，形成在基板上的反射层，形成在反射层上的第一导电层，形成在第一导电层上的有源层，以及形成在第一导电层上的第二导电层活动层。反射层具有折射率和厚度，使得入射到基板上的光的光电器件的反射光谱在可见光谱中在选定的波长范围内具有最大值。

6. 发明申请

US20100012937A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US20100012937A1
公开(公告)日：2010-01-21
申请号：US12269041
申请日：2008-11-12
申请人： Ming-Hsien Lee , Ching-Chieh Shih , An-Thung Cho , Chia-Tien Peng , Kun-Chih Lin
发明人： Ming-Hsien Lee , Ching-Chieh Shih , An-Thung Cho , Chia-Tien Peng , Kun-Chih Lin
IPC分类号： H01L29/04 , H01L31/18
CPC分类号： H01L27/14687 , G02F2001/13312 , G02F2201/58 , G06F3/0412 , G06F3/042 , H01L27/1214 , H01L27/14632
摘要： A method for fabricating a TFT array substrate including the following steps is provided. A substrate having a pixel region and a photosensitive region is provided. A first patterned conductive layer is formed on the substrate, wherein the first patterned conductive layer includes a gate electrode disposed in the pixel region and a first electrode disposed in the photosensitive region, and a photosensitive dielectric layer is formed on the first electrode. A gate insulation layer is formed to cover the gate electrode, the photosensitive dielectric layer and the first electrode. A patterned semiconductor layer is formed on the gate insulation layer above the gate electrode. A source electrode and a drain electrode are formed on the patterned semiconductor layer at two sides of the gate electrode, wherein the gate electrode, the source electrode, and the drain electrode constitute a TFT. A second electrode is formed on the photosensitive dielectric layer.
摘要翻译：提供了一种制造包括以下步骤的TFT阵列基板的方法。提供具有像素区域和感光区域的基板。第一图案化导电层形成在基板上，其中第一图案化导电层包括设置在像素区域中的栅极电极和设置在感光区域中的第一电极，并且在第一电极上形成光敏介电层。形成栅极绝缘层以覆盖栅电极，光敏介电层和第一电极。在栅极电极上方的栅极绝缘层上形成有图案化的半导体层。源电极和漏电极形成在栅电极两侧的图案化半导体层上，其中栅电极，源电极和漏电极构成TFT。在感光介电层上形成第二电极。

7. 发明申请

US20090283850A1 OPTICAL SENSOR AND METHOD OF MAKING THE SAME 有权
标题翻译：光学传感器及其制造方法
公开(公告)号：US20090283850A1
公开(公告)日：2009-11-19
申请号：US12346857
申请日：2008-12-31
申请人： An-Thung Cho , Chia-Tien Peng , Kun-Chih Lin
发明人： An-Thung Cho , Chia-Tien Peng , Kun-Chih Lin
IPC分类号： H01L31/0224 , H01L21/00
CPC分类号： H01L31/0384 , H01L27/14667 , H01L27/14692 , H01L31/03921 , Y02E10/50
摘要： An optical sensor includes a silicon-rich dielectric photosensitive device and a read-out device. The silicon-rich dielectric photosensitive device includes a first electrode, a second electrode, and a photosensitive silicon-rich dielectric layer disposed therebetween. The photosensitive silicon-rich dielectric layer includes a plurality of nanocrystalline silicon crystals therein. The read-out device is electrically connected to the first electrode of the silicon-rich dielectric photosensitive device for reading out opto-electronic signals transmitted from the photo-sensitive silicon-rich dielectric layer.
摘要翻译：光学传感器包括富硅介电光敏器件和读出器件。富含硅的电介质光敏元件包括第一电极，第二电极和位于它们之间的感光性富硅介电层。感光性富硅介电层在其中包含多个纳米晶体硅晶体。读出装置电连接到富硅电介质光敏装置的第一电极，用于读出从感光富硅电介质层传输的光电信号。

8. 发明授权

US07608475B2 Buffer layer for promoting electron mobility and thin film transistor having the same 有权
标题翻译：用于促进电子迁移率的缓冲层和具有该缓冲层的薄膜晶体管
公开(公告)号：US07608475B2
公开(公告)日：2009-10-27
申请号：US11254303
申请日：2005-10-19
申请人： Long-Sheng Liao , Kun-Chih Lin , Chia-Tien Peng
发明人： Long-Sheng Liao , Kun-Chih Lin , Chia-Tien Peng
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L21/2205 , H01L21/268 , H01L29/66757 , H01L29/78603 , H01L29/78675
摘要： A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.
摘要翻译：用于促进电子迁移率的缓冲层。缓冲层包括非晶硅层（a-Si）和含氧化物层。 a-Si具有足够高的密度，通过a-Si缓冲层防止衬底中的颗粒扩散到有源层中。同样，具有导热性的缓冲器为通过受激准分子激光退火（ELA）的无定形有源层重结晶期间的热扩散提供了良好的途径。因此，结晶硅的晶粒尺寸的均匀性提高，TFT的电子迁移率提高。

9. 发明申请

US20060038173A1 Buffer layer for promoting electron mobility and thin film transistor having the same 有权
公开(公告)号：US20060038173A1
公开(公告)日：2006-02-23
申请号：US11254303
申请日：2005-10-19
申请人： Long-Sheng Liao , Kun-Chih Lin , Chia-Tien Peng
发明人： Long-Sheng Liao , Kun-Chih Lin , Chia-Tien Peng
IPC分类号： H01L31/0376
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L21/2205 , H01L21/268 , H01L29/66757 , H01L29/78603 , H01L29/78675
摘要： A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

10. 发明申请

US20120286811A1 CAPACITANCE DIFFERENCE DETECTING METHOD 审中-公开
标题翻译：电容差分检测方法
公开(公告)号：US20120286811A1
公开(公告)日：2012-11-15
申请号：US13556212
申请日：2012-07-24
申请人： Kun-Chih Lin , Wen-Chi Wu
发明人： Kun-Chih Lin , Wen-Chi Wu
IPC分类号： G01R27/26
CPC分类号： H03K17/962 , G01D5/24 , H03K2217/96074 , H03K2217/960745
摘要： A capacitance difference detecting method, comprising: (a) utilizing a voltage control unit to cooperate with a first capacitor to be detected and a second capacitor to be detected to generate a first voltage and a second voltage; and (b) computing a capacitance difference between the first capacitor to be detected and the second capacitor to be detected according to the first voltage, the second voltage and a parameter of the voltage control unit.
摘要翻译：一种电容差检测方法，包括：（a）利用电压控制单元与待检测的第一电容器和待检测的第二电容器协作以产生第一电压和第二电压; 以及（b）根据第一电压，第二电压和电压控制单元的参数来计算要检测的第一电容器与待检测的第二电容器之间的电容差。

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