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1. 发明申请

US20090262054A1 Active matrix display device with dummy data lines 有权
标题翻译：具有虚数据线的主动矩阵显示装置
公开(公告)号：US20090262054A1
公开(公告)日：2009-10-22
申请号：US12386605
申请日：2009-04-20
申请人： Chih-Chieh Hsu , Tsau-Hua Hsieh , Chao-Yi Hung , Chao-Chih Lai
发明人： Chih-Chieh Hsu , Tsau-Hua Hsieh , Chao-Yi Hung , Chao-Chih Lai
IPC分类号： G09G3/36
CPC分类号： G09G3/3648 , G09G3/3607 , G09G3/3614 , G09G2300/0413 , G09G2300/0426 , G09G2320/0247
摘要： An exemplary active matrix display device includes a display panel comprising a plurality of scanning lines extending along a horizontal axis, a plurality of data lines extending along a vertical axis, and a plurality of dummy data lines. Two scanning lines and two data lines define two display pixels; each of the plurality of data lines is connected to at least two adjacent display pixels along the horizontal axis, and the at least two adjacent display pixels are driven by the two scanning lines, respectively. Each of the plurality of dummy data lines is disposed between two random adjacent data lines and is provided with gray scale voltage signals by a driving circuit of the display panel, thereby forming coupling capacitances between each of the plurality of dummy data lines and two pixel electrodes of the two display pixels.
摘要翻译：示例性的有源矩阵显示装置包括：显示面板，包括沿着水平轴延伸的多条扫描线，沿着垂直轴延伸的多条数据线，以及多条虚拟数据线。两条扫描线和两条数据线定义两个显示像素; 多条数据线中的每条数据线都沿着水平轴连接至至少两个相邻的显示像素，并且至少两个相邻的显示像素分别由两条扫描线驱动。多个虚拟数据线中的每一个被配置在两个随机相邻数据线之间，并且由显示面板的驱动电路提供灰度级电压信号，从而在多个虚拟数据线和两个像素电极之间形成耦合电容的两个显示像素。

2. 发明授权

US08368625B2 Active matrix display device with dummy data lines 有权
公开(公告)号：US08368625B2
公开(公告)日：2013-02-05
申请号：US12386605
申请日：2009-04-20
申请人： Chih-Chieh Hsu , Tsau-Hua Hsieh , Chao-Yi Hung , Chao-Chih Lai
发明人： Chih-Chieh Hsu , Tsau-Hua Hsieh , Chao-Yi Hung , Chao-Chih Lai
IPC分类号： G09G3/36
CPC分类号： G09G3/3648 , G09G3/3607 , G09G3/3614 , G09G2300/0413 , G09G2300/0426 , G09G2320/0247
摘要： An exemplary active matrix display device includes a display panel comprising a plurality of scanning lines extending along a horizontal axis, a plurality of data lines extending along a vertical axis, and a plurality of dummy data lines. Two scanning lines and two data lines define two display pixels; each of the plurality of data lines is connected to at least two adjacent display pixels along the horizontal axis, and the at least two adjacent display pixels are driven by the two scanning lines, respectively. Each of the plurality of dummy data lines is disposed between two random adjacent data lines and is provided with gray scale voltage signals by a driving circuit of the display panel, thereby forming coupling capacitances between each of the plurality of dummy data lines and two pixel electrodes of the two display pixels.

3. 发明申请

US20120278751A1 INPUT METHOD AND INPUT MODULE THEREOF 审中-公开
标题翻译：输入方式和输入模块
公开(公告)号：US20120278751A1
公开(公告)日：2012-11-01
申请号：US13458867
申请日：2012-04-27
申请人： Chih-Yu Chen , Chun-Hao Tseng , Chih-Chieh Hsu
发明人： Chih-Yu Chen , Chun-Hao Tseng , Chih-Chieh Hsu
IPC分类号： G06F3/048
CPC分类号： G06F3/04895
摘要： An input method applied to an electronic device which can execute a text editing function is disclosed. The input method includes following steps: triggering a multi-function calling unit to execute an auxiliary input function which provides at least one application module when the text editing function is executed; selecting and executing the application module; and providing an assistance function. When the auxiliary input function is executed, the text editing function continues being executed. According to the disclosure, users can use multi-function operation while information input with a portable electronic device. That is, users do not need to jump out from the window of the input program to the computer operation system to look up for another assistant program, but can edit a document efficiently and smoothly.
摘要翻译：公开了一种应用于可执行文本编辑功能的电子设备的输入方法。输入方法包括以下步骤：触发多功能调用单元执行辅助输入功能，当执行文本编辑功能时，提供至少一个应用模块; 选择和执行应用模块; 并提供辅助功能。当执行辅助输入功能时，文本编辑功能继续执行。根据本公开，用户可以在使用便携式电子设备输入信息的同时使用多功能操作。也就是说，用户不需要从输入程序的窗口跳出到计算机操作系统来查找另一个助理程序，而是可以有效和顺利地编辑文档。

4. 发明申请

US20130168666A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：半导体器件及其形成方法
公开(公告)号：US20130168666A1
公开(公告)日：2013-07-04
申请号：US13433311
申请日：2012-03-29
申请人： Jing-Yi Yan , Chen-Wei Lin , Chih-Chieh Hsu , King-Yuan Ho
发明人： Jing-Yi Yan , Chen-Wei Lin , Chih-Chieh Hsu , King-Yuan Ho
IPC分类号： H01L29/12 , H01L21/336
CPC分类号： H01L27/1225 , H01L27/1251
摘要： A semiconductor device is provided. A first semiconductor layer is disposed on a substrate and has a channel region and two doped regions beside the channel region. A first dielectric layer is disposed on the substrate and covers the first semiconductor layer. A gate is disposed on the first dielectric layer and corresponds to the channel region of the first semiconductor layer. A second dielectric layer is disposed on the first dielectric layer and covers the gate. A second semiconductor layer is disposed on the second dielectric layer and corresponds to the gate. The boundary of the second semiconductor layer does not exceed that of the gate. At least one first conductive plug penetrates through the first and second dielectric layers and contacts one doped region of the first semiconductor layer. At least one contact contacts the second semiconductor layer. A method of forming a semiconductor device is also provided.
摘要翻译：提供一种半导体器件。第一半导体层设置在衬底上，并且在沟道区域旁边具有沟道区和两个掺杂区。第一电介质层设置在衬底上并覆盖第一半导体层。栅极设置在第一介电层上并对应于第一半导体层的沟道区。第二电介质层设置在第一电介质层上并覆盖栅极。第二半导体层设置在第二电介质层上并对应于栅极。第二半导体层的边界不超过栅极的边界。至少一个第一导电插塞穿过第一和第二电介质层并接触第一半导体层的一个掺杂区域。至少一个触点接触第二半导体层。还提供了一种形成半导体器件的方法。

5. 发明申请

US20080308808A1 Thin film transistor array substrate and method for fabricating same 审中-公开
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US20080308808A1
公开(公告)日：2008-12-18
申请号：US12214177
申请日：2008-06-16
申请人： Chih-Chieh Hsu , Shuo-Ting Yan
发明人： Chih-Chieh Hsu , Shuo-Ting Yan
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78696 , H01L27/1214 , H01L29/66765 , H01L29/78618 , H01L29/78669
摘要： An exemplary TFT array substrate includes an insulating substrate, a gate electrode provided on the insulating substrate, a gate insulating layer covering the gate electrode and the insulating layer, an amorphous silicon (a-Si) pattern formed on the gate insulating layer, a heavily doped a-Si pattern formed on the a-Si pattern, a source electrode formed on the gate insulating layer and the heavily doped a-Si pattern and a drain electrode formed on the gate insulating layer and the heavily doped a-Si pattern. The source electrode and the drain electrode are isolated by a slit formed between the source electrode and the drain electrode, and the a-Si pattern includes a high resistivity portion corresponding to the slit whose resistance is higher than a resistance of the a-Si material.
摘要翻译：示例性TFT阵列基板包括绝缘基板，设置在绝缘基板上的栅电极，覆盖栅电极和绝缘层的栅极绝缘层，形成在栅极绝缘层上的非晶硅（a-Si）图案，形成在a-Si图案上的掺杂a-Si图案，形成在栅极绝缘层上的源电极和重掺杂的a-Si图案以及形成在栅极绝缘层和重掺杂a-Si图案上的漏电极。源电极和漏电极由形成在源电极和漏极之间的狭缝隔离，并且a-Si图案包括对应于电阻高于a-Si材料的电阻的狭缝的高电阻率部分。

6. 发明授权

US09165947B2 Semiconductor device, TFT, capacitor and method of manufacturing the same 有权
标题翻译：半导体器件，TFT，电容器及其制造方法
公开(公告)号：US09165947B2
公开(公告)日：2015-10-20
申请号：US13427904
申请日：2012-03-23
申请人： Jing-Yi Yan , Chih-Chieh Hsu , Hsiao-Chiang Yao , Chu-Yin Hung
发明人： Jing-Yi Yan , Chih-Chieh Hsu , Hsiao-Chiang Yao , Chu-Yin Hung
IPC分类号： H01L29/786 , H01L27/12 , H01L21/336
CPC分类号： H01L29/66969 , H01L27/1225 , H01L27/1255 , H01L27/1259 , H01L29/66765 , H01L29/78606 , H01L29/7869
摘要： A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.
摘要翻译：半导体器件包括栅极，第一电极，第一绝缘层，有源层，蚀刻停止层，第二绝缘层，源极，漏极和第二电极。第一绝缘层覆盖栅极和第一电极。有源层和蚀刻停止层分别设置在栅极和第一电极上的第一绝缘层上。第二绝缘层覆盖有源层和蚀刻停止层，并且具有暴露有源层的第一开口和第二开口以及露出蚀刻停止层的第三开口。源极和漏极设置在第二绝缘层上，并且分别通过第一开口和第二开口与有源层接触。第二电极位于第二绝缘层上，并通过第三开口与蚀刻停止层接触。

7. 发明申请

US20130063409A1 PIXEL STRUCTURE, HYBRID DISPLAY APPARATUS, AND DRIVING METHOD 审中-公开
标题翻译：像素结构，混合显示设备和驱动方法
公开(公告)号：US20130063409A1
公开(公告)日：2013-03-14
申请号：US13437941
申请日：2012-04-03
申请人： Yung-Hsiang Chiu , Heng-Yin Chen , Heng-Lin Pan , Chang-An Ho , Chen-Wei Lin , Chih-Chieh Hsu
发明人： Yung-Hsiang Chiu , Heng-Yin Chen , Heng-Lin Pan , Chang-An Ho , Chen-Wei Lin , Chih-Chieh Hsu
IPC分类号： G09G5/00
CPC分类号： G09G3/3233 , G09G3/348 , G09G2300/046 , G09G2300/0814 , G09G2300/0819 , G09G2300/0842
摘要： A pixel structure including a first switch device, an amplifying device, a first display unit, a second switch device, and a second display unit is provided. The first switch device is coupled to a scan line, a data line, and the amplifying device. The amplifying device is coupled to a bias voltage. The first display unit is coupled to the amplifying device and a switching voltage. The second switch device is coupled to the first display unit, the first switch device, and the second display unit. The second display unit is coupled to a common voltage. A hybrid display apparatus and a driving method are also provided.
摘要翻译：提供了包括第一开关装置，放大装置，第一显示单元，第二开关装置和第二显示单元的像素结构。第一开关装置耦合到扫描线，数据线和放大装置。放大装置耦合到偏置电压。第一显示单元耦合到放大装置和开关电压。第二开关装置耦合到第一显示单元，第一开关装置和第二显示单元。第二显示单元耦合到公共电压。还提供了一种混合显示装置和驱动方法。

8. 发明申请

US20130140635A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130140635A1
公开(公告)日：2013-06-06
申请号：US13427904
申请日：2012-03-23
申请人： Jing-Yi Yan , Chih-Chieh Hsu , Hsiao-Chiang Yao , Chu-Yin Hung
发明人： Jing-Yi Yan , Chih-Chieh Hsu , Hsiao-Chiang Yao , Chu-Yin Hung
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66969 , H01L27/1225 , H01L27/1255 , H01L27/1259 , H01L29/66765 , H01L29/78606 , H01L29/7869
摘要： A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.
摘要翻译：半导体器件包括栅极，第一电极，第一绝缘层，有源层，蚀刻停止层，第二绝缘层，源极，漏极和第二电极。第一绝缘层覆盖栅极和第一电极。有源层和蚀刻停止层分别设置在栅极和第一电极上的第一绝缘层上。第二绝缘层覆盖有源层和蚀刻停止层，并且具有暴露有源层的第一开口和第二开口以及露出蚀刻停止层的第三开口。源极和漏极设置在第二绝缘层上，并且分别通过第一开口和第二开口与有源层接触。第二电极位于第二绝缘层上，并通过第三开口与蚀刻停止层接触。

9. 发明授权

US06857186B2 Method of manufacturing a piezoelectric print-head 失效
标题翻译：压电打印头的制造方法
公开(公告)号：US06857186B2
公开(公告)日：2005-02-22
申请号：US10249939
申请日：2003-05-21
申请人： Chen-Hua Lin , Wen-Chung Lu , Ming-Hsun Yang , Guey-Chyuan Chen , Chih-Chieh Hsu
发明人： Chen-Hua Lin , Wen-Chung Lu , Ming-Hsun Yang , Guey-Chyuan Chen , Chih-Chieh Hsu
IPC分类号： B41J2/045 , B41J2/055 , B41J2/14 , B41J2/16 , B23P17/00 , B21D53/76
CPC分类号： B41J2/1631 , B41J2/14233 , B41J2/161 , B41J2/1626 , B41J2/1632 , B41J2/1643 , B41J2202/03 , Y10T29/42 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49401
摘要： A method of manufacturing a piezoelectric ink-jet print-head uses a metallic layer and a thick film layer with a slot hole therein instead of a ceramic vibration plate and an ink layer. The piezoelectric layer and the upper electrode layer are formed inside the ink cavity so that overall thickness of the print head is reduced. To form the ink-jet print head, a metallic layer and a lower electrode layer are sequentially formed over a substrate. A patterned piezoelectric layer and an upper electrode layer are sequentially formed over the lower electrode layer. A patterned thick film layer with a slot hole therein is formed over the metallic layer. The thick film layer and the metallic layer together form a cavity that encloses the piezoelectric layer and the upper electrode layer. A nozzle plate having a nozzle thereon is attached to the thick film layer. The nozzle plate, the thick film layer and the metallic layer together form an ink cavity. The hole in the nozzle is continuous with the ink cavity.
摘要翻译：压电喷墨打印头的制造方法使用金属层和具有槽孔的厚膜层而不是陶瓷振动板和油墨层。压电层和上电极层形成在墨腔内部，使得打印头的总体厚度减小。为了形成喷墨打印头，在衬底上顺序形成金属层和下电极层。在下电极层上依次形成图案化的压电层和上电极层。在金属层上形成有在其中具有槽孔的图案化的厚膜层。厚膜层和金属层一起形成包围压电层和上电极层的空腔。其上具有喷嘴的喷嘴板附接到厚膜层。喷嘴板，厚膜层和金属层一起形成油墨腔。喷嘴中的孔与油墨腔连续。

10. 发明授权

US06773094B2 Method of using photolithography and etching for forming a nozzle plate of an inkjet print head 失效
标题翻译：使用光刻和蚀刻来形成喷墨打印头的喷嘴板的方法
公开(公告)号：US06773094B2
公开(公告)日：2004-08-10
申请号：US10348630
申请日：2003-01-22
申请人： Kung Linliu , Ming-Hsun Yang , Arnold Chang-mou Yang , Guey-Chyuan Chen , Chih-Chieh Hsu
发明人： Kung Linliu , Ming-Hsun Yang , Arnold Chang-mou Yang , Guey-Chyuan Chen , Chih-Chieh Hsu
IPC分类号： B41J204
CPC分类号： B41J2/1628 , B41J2/162 , B41J2/1631 , Y10T29/49401
摘要： A method of forming a nozzle plate of an inkjet print head. A silicon chip is provided with an activated device and a first film is formed on the silicon chip, with a first opening corresponding to the activated device. Then, a second film is formed on the first film. Next, a photoresist layer is formed on the second film, such that the photoresist layer has a second opening corresponding to the first opening. Next, the second film under the second opening of the photoresist layer is etched to form a via in the second film passing through the first opening.
摘要翻译：一种形成喷墨打印头的喷嘴板的方法。硅芯片设置有激活的器件，并且第一膜形成在硅芯片上，具有对应于激活器件的第一开口。然后，在第一膜上形成第二膜。接下来，在第二膜上形成光致抗蚀剂层，使得光致抗蚀剂层具有对应于第一开口的第二开口。接下来，蚀刻在光致抗蚀剂层的第二开口下方的第二膜，以在通过第一开口的第二膜中形成通孔。

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