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1. 发明申请

US20130328167A1 SELF-ALIGNED METAL-INSULATOR-METAL (MIM) CAPACITOR 审中-公开
标题翻译：自对准金属绝缘子 - 金属（MIM）电容器
公开(公告)号：US20130328167A1
公开(公告)日：2013-12-12
申请号：US13489940
申请日：2012-06-06
申请人： Chih-Chao Yang , Daniel C. Edelstein , Baozhen Li , Keith Kwong Hon Wong
发明人： Chih-Chao Yang , Daniel C. Edelstein , Baozhen Li , Keith Kwong Hon Wong
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L28/75 , H01L23/5223 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： A metal-insulator-metal (MIM) capacitor structure integrated within a back-end-of-the-line (BEOL) structure is provided. The MIM capacitor structure includes a lower electrode, i.e., a first conductive material, embedded within a dielectric material of the BEOL structure, a dielectric material liner having a dielectric constant of equal to, or greater than, silicon dioxide located atop the lower electrode, and an upper electrode, i.e., a second conductive material, positioned between vertical portions of the dielectric material liner and atop a horizontal connecting portion of the dielectric material liner. In accordance with the present disclosure, the vertical portions of the dielectric material liner do not extend onto an upper surface of the dielectric material that includes the lower electrode.
摘要翻译：提供集成在后端（BEOL）结构中的金属 - 绝缘体 - 金属（MIM）电容器结构。 MIM电容器结构包括嵌入在BEOL结构的电介质材料中的下电极，即第一导电材料，具有等于或大于位于下电极顶部的二氧化硅的介电常数的介电材料衬垫，以及位于电介质材料衬垫的垂直部分之间并且位于介电材料衬里的水平连接部分顶部的上电极，即第二导电材料。根据本公开，电介质材料衬垫的垂直部分不延伸到包括下电极的电介质材料的上表面上。

2. 发明申请

US20110003473A1 STRUCTURE FOR METAL CAP APPLICATIONS 有权
标题翻译：金属盖应用结构
公开(公告)号：US20110003473A1
公开(公告)日：2011-01-06
申请号：US12881806
申请日：2010-09-14
申请人： Chih-Chao Yang , Daniel C. Edelstein , Keith Kwong Hon Wong , Haining Yang
发明人： Chih-Chao Yang , Daniel C. Edelstein , Keith Kwong Hon Wong , Haining Yang
IPC分类号： H01L21/768
CPC分类号： H01L21/76885 , H01L21/76826 , H01L21/76834 , H01L21/7684 , H01L21/76849
摘要： An interconnect structure is provided in which the conductive features embedded within a dielectric material are capped with a metallic capping layer, yet no metallic residue is present on the surface of the dielectric material in the final structure. The inventive interconnect structure has improved dielectric breakdown strength as compared to prior art interconnect structures. Moreover, the inventive interconnect structure has better reliability and technology extendibility for the semiconductor industry. The inventive interconnect structure includes a dielectric material having at least one metallic capped conductive feature embedded therein, wherein a top portion of said at least one metallic capped conductive feature extends above an upper surface of the dielectric material. A dielectric capping layer is located on the dielectric material and it encapsulates the top portion of said at least one metallic capped conductive feature that extends above the upper surface of dielectric material.
摘要翻译：提供了一种互连结构，其中嵌入电介质材料内的导电特征被金属覆盖层封盖，但在最终结构中绝缘材料表面上没有金属残留物。与现有技术的互连结构相比，本发明的互连结构具有改善的介电击穿强度。此外，本发明的互连结构对于半导体工业具有更好的可靠性和技术可扩展性。本发明的互连结构包括具有嵌入其中的至少一个金属封盖的导电特征的电介质材料，其中所述至少一个金属封端的导电特征的顶部在电介质材料的上表面上方延伸。电介质覆盖层位于电介质材料上，并且封装在电介质材料的上表面上方延伸的所述至少一个金属封盖导电特征的顶部。

3. 发明申请

US20090148677A1 HIGH ASPECT RATIO ELECTROPLATED METAL FEATURE AND METHOD 失效
标题翻译：高比例电镀金属特征及方法
公开(公告)号：US20090148677A1
公开(公告)日：2009-06-11
申请号：US11953359
申请日：2007-12-10
申请人： Daniel C. Edelstein , Keith Kwong Hon Wong , Chih-Chao Yang , Haining S. Yang
发明人： Daniel C. Edelstein , Keith Kwong Hon Wong , Chih-Chao Yang , Haining S. Yang
IPC分类号： C25D5/02 , B32B3/00
CPC分类号： C25D5/02 , Y10T428/24331 , Y10T428/24917
摘要： Disclosed are embodiments of an improved high aspect ratio electroplated metal structure (e.g., a copper or copper alloy interconnect, such as a back end of the line (BEOL) or middle of the line (MOL) contact) in which the electroplated metal fill material is free from seams and/or voids. Also, disclosed are embodiments of a method of forming such an electroplated metal structure by lining a high aspect ratio opening (e.g., a high aspect ratio via or trench) with a metal-plating seed layer and, then, forming a protective layer over the portion of the metal-plating seed layer adjacent to the opening sidewalls so that subsequent electroplating occurs only from the bottom surface of the opening up.
摘要翻译：公开了改进的高宽比电镀金属结构（例如，铜或铜合金互连，例如线的后端（BEOL）或线的中间（MOL）接触）的实施例，其中电镀金属填充材料没有接缝和/或空隙。此外，公开了通过用金属电镀种子层衬里高纵横比开口（例如，高纵横比通孔或沟槽）形成这种电镀金属结构的方法的实施例，然后在其上形成保护层金属电镀种子层的一部分与开口侧壁相邻，使得随后的电镀仅从开口的底表面发生。

4. 发明授权

US08133810B2 Structure for metal cap applications 有权
标题翻译：金属盖应用结构
公开(公告)号：US08133810B2
公开(公告)日：2012-03-13
申请号：US12881806
申请日：2010-09-14
申请人： Chih-Chao Yang , Daniel C. Edelstein , Keith Kwong Hon Wong , Haining Yang
发明人： Chih-Chao Yang , Daniel C. Edelstein , Keith Kwong Hon Wong , Haining Yang
IPC分类号： H01L21/44
CPC分类号： H01L21/76885 , H01L21/76826 , H01L21/76834 , H01L21/7684 , H01L21/76849
摘要： An interconnect structure is provided in which the conductive features embedded within a dielectric material are capped with a metallic capping layer, yet no metallic residue is present on the surface of the dielectric material in the final structure. The inventive interconnect structure has improved dielectric breakdown strength as compared to prior art interconnect structures. Moreover, the inventive interconnect structure has better reliability and technology extendibility for the semiconductor industry. The inventive interconnect structure includes a dielectric material having at least one metallic capped conductive feature embedded therein, wherein a top portion of said at least one metallic capped conductive feature extends above an upper surface of the dielectric material. A dielectric capping layer is located on the dielectric material and it encapsulates the top portion of said at least one metallic capped conductive feature that extends above the upper surface of dielectric material.
摘要翻译：提供了一种互连结构，其中嵌入电介质材料内的导电特征被金属覆盖层封盖，但在最终结构中绝缘材料表面上没有金属残留物。与现有技术的互连结构相比，本发明的互连结构具有改善的介电击穿强度。此外，本发明的互连结构对于半导体工业具有更好的可靠性和技术可扩展性。本发明的互连结构包括具有嵌入其中的至少一个金属封盖的导电特征的电介质材料，其中所述至少一个金属封端的导电特征的顶部在电介质材料的上表面上方延伸。电介质覆盖层位于电介质材料上，并且封装在电介质材料的上表面上方延伸的所述至少一个金属封盖导电特征的顶部。

5. 发明授权

US07951714B2 High aspect ratio electroplated metal feature and method 有权
标题翻译：高宽比电镀金属特点及方法
公开(公告)号：US07951714B2
公开(公告)日：2011-05-31
申请号：US12706108
申请日：2010-02-16
申请人： Daniel C. Edelstein , Keith Kwong Hon Wong , Chih-Chao Yang , Haining S. Yang
发明人： Daniel C. Edelstein , Keith Kwong Hon Wong , Chih-Chao Yang , Haining S. Yang
IPC分类号： H01L21/44
CPC分类号： C25D5/02 , Y10T428/24331 , Y10T428/24917
摘要： Disclosed are embodiments of an improved high aspect ratio electroplated metal structure (e.g., a copper or copper alloy interconnect, such as a back end of the line (BEOL) or middle of the line (MOL) contact) in which the electroplated metal fill material is free from seams and/or voids. Also, disclosed are embodiments of a method of forming such an electroplated metal structure by lining a high aspect ratio opening (e.g., a high aspect ratio via or trench) with a metal-plating seed layer and, then, forming a protective layer over the portion of the metal-plating seed layer adjacent to the opening sidewalls so that subsequent electroplating occurs only from the bottom surface of the opening up.
摘要翻译：公开了改进的高宽比电镀金属结构（例如，铜或铜合金互连，例如线的后端（BEOL）或线的中间（MOL）接触）的实施例，其中电镀金属填充材料没有接缝和/或空隙。此外，公开了通过用金属电镀种子层衬里高纵横比开口（例如，高纵横比通孔或沟槽）形成这种电镀金属结构的方法的实施例，然后在其上形成保护层金属电镀种子层的一部分与开口侧壁相邻，使得随后的电镀仅从开口的底表面发生。

6. 发明申请

US20100143649A1 HIGH ASPECT RATIO ELECTROPLATED METAL FEATURE AND METHOD 有权
标题翻译：高比例电镀金属特征及方法
公开(公告)号：US20100143649A1
公开(公告)日：2010-06-10
申请号：US12706108
申请日：2010-02-16
申请人： Daniel C. Edelstein , Keith Kwong Hon Wong , Chih-Chao Yang , Haining S. Yang
发明人： Daniel C. Edelstein , Keith Kwong Hon Wong , Chih-Chao Yang , Haining S. Yang
IPC分类号： B32B3/10
CPC分类号： C25D5/02 , Y10T428/24331 , Y10T428/24917
摘要： Disclosed are embodiments of an improved high aspect ratio electroplated metal structure (e.g., a copper or copper alloy interconnect, such as a back end of the line (BEOL) or middle of the line (MOL) contact) in which the electroplated metal fill material is free from seams and/or voids. Also, disclosed are embodiments of a method of forming such an electroplated metal structure by lining a high aspect ratio opening (e.g., a high aspect ratio via or trench) with a metal-plating seed layer and, then, forming a protective layer over the portion of the metal-plating seed layer adjacent to the opening sidewalls so that subsequent electroplating occurs only from the bottom surface of the opening up.
摘要翻译：公开了改进的高宽比电镀金属结构（例如，铜或铜合金互连，例如线的后端（BEOL）或线的中间（MOL）接触）的实施例，其中电镀金属填充材料没有接缝和/或空隙。此外，公开了通过用金属电镀种子层衬里高纵横比开口（例如，高纵横比通孔或沟槽）形成这种电镀金属结构的方法的实施例，然后在其上形成保护层金属电镀种子层的一部分与开口侧壁相邻，使得随后的电镀仅从开口的底表面发生。

7. 发明申请

US20080197499A1 STRUCTURE FOR METAL CAP APPLICATIONS 审中-公开
标题翻译：金属盖应用结构
公开(公告)号：US20080197499A1
公开(公告)日：2008-08-21
申请号：US11675296
申请日：2007-02-15
申请人： Chih-Chao Yang , Daniel C. Edelstein , Keith Kwong Hon Wong , Haining Yang
发明人： Chih-Chao Yang , Daniel C. Edelstein , Keith Kwong Hon Wong , Haining Yang
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L21/7684 , H01L21/76826 , H01L21/76834 , H01L21/76849 , H01L21/76885
摘要： An interconnect structure is provided in which the conductive features embedded within a dielectric material are capped with a metallic capping layer, yet no metallic residue is present on the surface of the dielectric material in the final structure. The inventive interconnect structure has improved dielectric breakdown strength as compared to prior art interconnect structures. Moreover, the inventive interconnect structure has better reliability and technology extendibility for the semiconductor industry. The inventive interconnect structure includes a dielectric material having at least one metallic capped conductive feature embedded therein, wherein a top portion of said at least one metallic capped conductive feature extends above an upper surface of the dielectric material. A dielectric capping layer is located on the dielectric material and it encapsulates the top portion of said at least one metallic capped conductive feature that extends above the upper surface of dielectric material.
摘要翻译：提供了一种互连结构，其中嵌入电介质材料内的导电特征被金属覆盖层封盖，但在最终结构中绝缘材料表面上没有金属残留物。与现有技术的互连结构相比，本发明的互连结构具有改善的介电击穿强度。此外，本发明的互连结构对于半导体工业具有更好的可靠性和技术可扩展性。本发明的互连结构包括具有嵌入其中的至少一个金属封盖的导电特征的电介质材料，其中所述至少一个金属封端的导电特征的顶部在电介质材料的上表面上方延伸。电介质覆盖层位于电介质材料上，并且封装在电介质材料的上表面上方延伸的所述至少一个金属封盖导电特征的顶部。

8. 发明授权

US07727890B2 High aspect ratio electroplated metal feature and method 失效
标题翻译：高宽比电镀金属特点及方法
公开(公告)号：US07727890B2
公开(公告)日：2010-06-01
申请号：US11953359
申请日：2007-12-10
申请人： Daniel C. Edelstein , Keith Kwong Hon Wong , Chih-Chao Yang , Haining S. Yang
发明人： Daniel C. Edelstein , Keith Kwong Hon Wong , Chih-Chao Yang , Haining S. Yang
IPC分类号： H01L21/44
CPC分类号： C25D5/02 , Y10T428/24331 , Y10T428/24917
摘要： Disclosed are embodiments of an improved high aspect ratio electroplated metal structure (e.g., a copper or copper alloy interconnect, such as a back end of the line (BEOL) or middle of the line (MOL) contact) in which the electroplated metal fill material is free from seams and/or voids. Also, disclosed are embodiments of a method of forming such an electroplated metal structure by lining a high aspect ratio opening (e.g., a high aspect ratio via or trench) with a metal-plating seed layer and, then, forming a protective layer over the portion of the metal-plating seed layer adjacent to the opening sidewalls so that subsequent electroplating occurs only from the bottom surface of the opening up.
摘要翻译：公开了改进的高宽比电镀金属结构（例如，铜或铜合金互连，例如线的后端（BEOL）或线的中间（MOL）接触）的实施例，其中电镀金属填充材料没有接缝和/或空隙。此外，公开了通过用金属电镀种子层衬里高纵横比开口（例如，高纵横比通孔或沟槽）形成这种电镀金属结构的方法的实施例，然后在其上形成保护层金属电镀种子层的一部分与开口侧壁相邻，使得随后的电镀仅从开口的底表面发生。

9. 发明申请

US20120261793A1 ELECTRICAL FUSE AND METHOD OF MAKING THE SAME 有权
标题翻译：电保险丝及其制造方法
公开(公告)号：US20120261793A1
公开(公告)日：2012-10-18
申请号：US13085568
申请日：2011-04-13
申请人： Chih-Chao Yang , Stephen M. Gates , Baozhen Li , Daniel C. Edelstein
发明人： Chih-Chao Yang , Stephen M. Gates , Baozhen Li , Daniel C. Edelstein
IPC分类号： H01L23/525 , H01L21/768
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： An improved electrical-fuse (e-fuse) device including a dielectric layer having a first top surface, two conductive features embedded in the dielectric layer and a fuse element. Each conductive feature has a second top surface and a metal cap directly on the second top surface. Each metal cap has a third top surface that is above the first top surface of the dielectric layer. The fuse element is on the third top surface of each metal cap and on the first top surface of the dielectric layer. A method of forming the e-fuse device is also provided.
摘要翻译：一种改进的电熔丝（e-fuse）装置，包括具有第一顶表面的电介质层，嵌入介质层中的两个导电特征和熔丝元件。每个导电特征具有第二顶表面和直接在第二顶表面上的金属帽。每个金属盖具有在介电层的第一顶表面之上的第三顶表面。熔丝元件位于每个金属盖的第三顶表面上，并位于介质层的第一顶表面上。还提供了形成电熔丝装置的方法。

10. 发明授权

US09245794B2 Formation of alloy liner by reaction of diffusion barrier and seed layer for interconnect application 有权
标题翻译：通过扩散阻挡层和种子层的反应形成合金衬里，用于互连应用
公开(公告)号：US09245794B2
公开(公告)日：2016-01-26
申请号：US13614492
申请日：2012-09-13
申请人： Chih-Chao Yang , Daniel C. Edelstein , Takeshi Nogami
发明人： Chih-Chao Yang , Daniel C. Edelstein , Takeshi Nogami
IPC分类号： H05K1/09 , H01L21/768 , H01L23/532
CPC分类号： H01L21/76846 , H01L21/76844 , H01L21/76858 , H01L21/76867 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , Y10T29/49117 , Y10T29/49155 , Y10T29/49165 , H01L2924/00
摘要： An interconnect structure including an alloy liner positioned directly between a diffusion barrier and a Cu alloy seed layer as well as methods for forming such an interconnect structure are provided. The alloy liner of the present invention is formed by thermally reacting a previously deposited diffusion barrier metal alloy layer with an overlying Cu alloy seed layer. During the thermal reaction, the metal alloys from the both the diffusion barrier and the Cu alloys seed layer react forming a metal alloy reaction product between the diffusion barrier and the Cu seed layer.
摘要翻译：提供了包括直接位于扩散阻挡层和Cu合金种子层之间的合金衬垫的互连结构以及用于形成这种互连结构的方法。本发明的合金衬垫通过使预先沉积的扩散阻挡金属合金层与覆盖的Cu合金种子层热反应形成。在热反应期间，来自扩散阻挡层和Cu合金种子层的金属合金在扩散阻挡层和Cu籽晶层之间反应形成金属合金反应产物。

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