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1. 发明授权

US08773158B2 Inspection method 有权
标题翻译：检验方法
公开(公告)号：US08773158B2
公开(公告)日：2014-07-08
申请号：US13114039
申请日：2011-05-23
申请人： Chien-Ping Wang , Shih-Chun Yang , Tzung-Te Chen , An-Tse Lee , Sheng-Bang Huang
发明人： Chien-Ping Wang , Shih-Chun Yang , Tzung-Te Chen , An-Tse Lee , Sheng-Bang Huang
IPC分类号： G01R31/26
CPC分类号： G01R31/2635 , G01R31/2642
摘要： An inspection system is provided, which applies a forward or reverse voltage on a light-emitting device and measures a current thereof respectively before and after temperature rise, and determines whether the device fails according to the fact whether a current difference before and after the temperature rise is larger than a failure current determination value. Alternatively, the inspection system adopts a current applying device to apply a forward and reverse current on a light-emitting device and measures a voltage difference thereof respectively before and after temperature rise, and determines whether the device fails according to the fact whether a difference of the voltage differences before and after the temperature rise is larger than a failure voltage determination value. Alternatively, the inspection system adopts a predetermined inspecting step and a rapid inspecting step respectively to determine whether a light-emitting device fails. An inspection method for the inspection system is also provided.
摘要翻译：提供一种检查系统，其在发光装置上施加正向或反向电压并分别在升温之前和之后测量其电流，并且根据事件之前和之后的电流差异来确定装置是否失效上升大于故障电流确定值。或者，检查系统采用电流施加装置，在发光装置上施加正向和反向电流，并且分别在温升之前和之后测量其电压差，并根据事实是否根据温升前后的电压差大于故障电压判定值。或者，检查系统分别采用预定的检查步骤和快速检查步骤来确定发光装置是否发生故障。还提供了检查系统的检查方法。

2. 发明申请

US20120169345A1 INSPECTION METHOD 有权
标题翻译：检查方法
公开(公告)号：US20120169345A1
公开(公告)日：2012-07-05
申请号：US13114039
申请日：2011-05-23
申请人： Chien-Ping Wang , Shih-Chun Yang , Tzung-Te Chen , An-Tse Lee , Sheng-Bang Huang
发明人： Chien-Ping Wang , Shih-Chun Yang , Tzung-Te Chen , An-Tse Lee , Sheng-Bang Huang
IPC分类号： G01R31/44
CPC分类号： G01R31/2635 , G01R31/2642
摘要： An inspection system is provided, which applies a forward or reverse voltage on a light-emitting device and measures a current thereof respectively before and after temperature rise, and determines whether the device fails according to the fact whether a current difference before and after the temperature rise is larger than a failure current determination value. Alternatively, the inspection system adopts a current applying device to apply a forward and reverse current on a light-emitting device and measures a voltage difference thereof respectively before and after temperature rise, and determines whether the device fails according to the fact whether a difference of the voltage differences before and after the temperature rise is larger than a failure voltage determination value. Alternatively, the inspection system adopts a predetermined inspecting step and a rapid inspecting step respectively to determine whether a light-emitting device fails. An inspection method for the inspection system is also provided.
摘要翻译：提供一种检查系统，其在发光装置上施加正向或反向电压并分别在升温之前和之后测量其电流，并且根据事件之前和之后的电流差异来确定装置是否失效上升大于故障电流确定值。或者，检查系统采用电流施加装置，在发光装置上施加正向和反向电流，并且分别在温升之前和之后测量其电压差，并根据事实是否根据温升前后的电压差大于故障电压判定值。或者，检查系统分别采用预定的检查步骤和快速检查步骤来确定发光装置是否发生故障。还提供了检查系统的检查方法。

3. 发明授权

US09557368B2 Method of measuring thermal electric characteristics of semiconductor device 有权
标题翻译：测量半导体器件热电特性的方法
公开(公告)号：US09557368B2
公开(公告)日：2017-01-31
申请号：US13587498
申请日：2012-08-16
申请人： Chien-Ping Wang , Tzung-Te Chen , Pei-Ting Chou
发明人： Chien-Ping Wang , Tzung-Te Chen , Pei-Ting Chou
IPC分类号： G01R31/00 , G01R31/26 , G01R31/44
CPC分类号： G01R31/2635 , G01R31/44
摘要： The present disclosure relates to a method for measuring thermal electric characteristics of a semiconductor device, including the steps of: providing at least one current to the LED device over a time interval; recording a voltage transient response of the LED device, wherein the voltage transient response has a plurality of time segments different in gradient; computing a voltage difference from one of the plurality of time segments in the voltage transient response; and determining whether the LED device is defective based on the voltage difference, wherein the voltage difference is thermal dependent. The present disclosure also provides a testing method for defining a plurality of time segments.
摘要翻译：本公开涉及一种用于测量半导体器件的热电特性的方法，包括以下步骤：在一段时间间隔内向LED器件提供至少一个电流; 记录所述LED装置的电压瞬变响应，其中所述电压瞬变响应具有不同梯度的多个时间段; 在所述电压瞬态响应中计算所述多个时间段中的一个时间段的电压差; 以及基于所述电压差来确定所述LED器件是否有故障，其中所述电压差是热依赖的。本公开还提供了一种用于定义多个时间段的测试方法。

4. 发明授权

US09110125B2 Method and apparatus for detecting relationship between thermal and electrical properties of semiconductor device 有权
标题翻译：用于检测半导体器件的热和电特性之间关系的方法和装置
公开(公告)号：US09110125B2
公开(公告)日：2015-08-18
申请号：US13628058
申请日：2012-09-27
申请人： Chien-Ping Wang , Tzung-Te Chen , Pei-Ting Chou , Chun-Fan Dai , Yi-Ping Peng
发明人： Chien-Ping Wang , Tzung-Te Chen , Pei-Ting Chou , Chun-Fan Dai , Yi-Ping Peng
IPC分类号： G01R31/02 , G01R31/26 , G01R31/28 , G01R31/30
CPC分类号： G01R31/2635 , G01R31/2855 , G01R31/3004
摘要： A method for detecting a semiconductor device property is provided. First, a semiconductor device is provided. Thereafter, a detecting current is applied and the semiconductor device is heated, and temperatures and voltages of the semiconductor device are measured, so as to establish a relationship between the temperatures and the voltages of the semiconductor device. Accordingly, a temperature sensitive parameter (TSP) is calculated. An apparatus for detecting a semiconductor device property is also provided.
摘要翻译：提供了一种用于检测半导体器件特性的方法。首先，提供半导体器件。此后，施加检测电流并加热半导体器件，并测量半导体器件的温度和电压，以便建立半导体器件的温度和电压之间的关系。因此，计算温度敏感参数（TSP）。还提供了一种用于检测半导体器件特性的装置。

5. 发明申请

US20140049283A1 METHOD AND APPARATUS FOR DETECTING SEMICONDUCTOR DEVICE PROPERTY 有权
标题翻译：用于检测半导体器件属性的方法和装置
公开(公告)号：US20140049283A1
公开(公告)日：2014-02-20
申请号：US13628058
申请日：2012-09-27
申请人： Chien-Ping Wang , Tzung-Te Chen , Pei-Ting Chou , Chun-Fan Dai , Yi-Ping Peng
发明人： Chien-Ping Wang , Tzung-Te Chen , Pei-Ting Chou , Chun-Fan Dai , Yi-Ping Peng
IPC分类号： G01R31/26
CPC分类号： G01R31/2635 , G01R31/2855 , G01R31/3004
摘要： A method for detecting a semiconductor device property is provided. First, a semiconductor device is provided. Thereafter, a detecting current is applied and the semiconductor device is heated, and temperatures and voltages of the semiconductor device are measured, so as to establish a relationship between the temperatures and the voltages of the semiconductor device. Accordingly, a temperature sensitive parameter (TSP) is calculated. An apparatus for detecting a semiconductor device property is also provided.
摘要翻译：提供了一种用于检测半导体器件特性的方法。首先，提供半导体器件。此后，施加检测电流并加热半导体器件，并测量半导体器件的温度和电压，以便建立半导体器件的温度和电压之间的关系。因此，计算温度敏感参数（TSP）。还提供了一种用于检测半导体器件特性的装置。

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