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1. 发明申请

US20100133495A1 PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME 审中-公开
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20100133495A1
公开(公告)日：2010-06-03
申请号：US12552826
申请日：2009-09-02
申请人： Chien-Min Lee , Ming-Jeng Huang , Jen-Chi Chuang , Jia-Yo Lin , Min-Chih Wang
发明人： Chien-Min Lee , Ming-Jeng Huang , Jen-Chi Chuang , Jia-Yo Lin , Min-Chih Wang
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A phase change memory device is provided, including a substrate, a first dielectric layer disposed over the substrate, a first electrode disposed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer, covering the first electrode, a heating electrode disposed in the second dielectric layer, contacting the first electrode, a phase change material layer disposed over the second dielectric layer, contacting the heating electrode, and a second electrode disposed over the phase change material layer. In one embodiment, the heating electrode includes a first portion contacting the first electrode and a second portion contacting the phase change material layer, and the second portion of the heating electrode includes metal silicides and the first portion of the heating electrode includes no metal silicides.
摘要翻译：提供一种相变存储器件，包括：衬底，设置在衬底上的第一电介质层，设置在第一电介质层中的第一电极，形成在第一电介质层上的第二电介质层，覆盖第一电极;加热电极设置在所述第二电介质层中，与所述第一电极接触，设置在所述第二电介质层上方的与所述加热电极接触的相变材料层和设置在所述相变材料层上的第二电极。在一个实施例中，加热电极包括接触第一电极的第一部分和与相变材料层接触的第二部分，加热电极的第二部分包括金属硅化物，加热电极的第一部分不包括金属硅化物。

2. 发明申请

US20110312150A1 PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME 审中-公开
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20110312150A1
公开(公告)日：2011-12-22
申请号：US13219568
申请日：2011-08-26
申请人： Chien-Min Lee , Ming-Jeng Huang , Jen-Chi Chuang , Jia-Yo Lin , Min-Chih Wang
发明人： Chien-Min Lee , Ming-Jeng Huang , Jen-Chi Chuang , Jia-Yo Lin , Min-Chih Wang
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A phase change memory device is provided, including a substrate, a first dielectric layer disposed over the substrate, a first electrode disposed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer, covering the first electrode, a heating electrode disposed in the second dielectric layer, contacting the first electrode, a phase change material layer disposed over the second dielectric layer, contacting the heating electrode, and a second electrode disposed over the phase change material layer. In one embodiment, the heating electrode includes a first portion contacting the first electrode and a second portion contacting the phase change material layer, and the second portion of the heating electrode includes metal silicides and the first portion of the heating electrode includes no metal silicides.
摘要翻译：提供一种相变存储器件，包括：衬底，设置在衬底上的第一电介质层，设置在第一电介质层中的第一电极，形成在第一电介质层上的第二电介质层，覆盖第一电极;加热电极设置在所述第二电介质层中，与所述第一电极接触，设置在所述第二电介质层上方的与所述加热电极接触的相变材料层和设置在所述相变材料层上的第二电极。在一个实施例中，加热电极包括接触第一电极的第一部分和与相变材料层接触的第二部分，加热电极的第二部分包括金属硅化物，加热电极的第一部分不包括金属硅化物。

3. 发明申请

US20100213432A1 PHASE CHANGE MEMORY DEVICE AND FABRICATION THEREOF 审中-公开
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20100213432A1
公开(公告)日：2010-08-26
申请号：US12468699
申请日：2009-05-19
申请人： Jen-Chi Chuang , Ming-Jeng Huang , Chien-Min Lee , Jia-Yo Lin , Min-Chih Wang
发明人： Jen-Chi Chuang , Ming-Jeng Huang , Chien-Min Lee , Jia-Yo Lin , Min-Chih Wang
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1683
摘要： A method for forming a phase change memory device is disclosed. A substrate with a bottom electrode thereon is provided. A heating electrode and a dielectric layer are formed on the bottom electrode, wherein the heating electrode is surrounded by the dielectric layer. The heating electrode is etched to form recess in the dielectric layer. A phase change material is deposited on the dielectric layer, filling into the recess. The phase change material is polished to remove a portion of the phase change material exceeding the surface of the dielectric layer and a phase change layer is formed confined in the recess of the dielectric layer. A top electrode is formed on the phase change layer and the dielectric layer.
摘要翻译：公开了一种形成相变存储器件的方法。提供具有底部电极的基板。在底部电极上形成加热电极和电介质层，其中加热电极被电介质层包围。蚀刻加热电极以在电介质层中形成凹陷。相变材料沉积在介电层上，填充到凹槽中。抛光相变材料以除去超过介电层表面的一部分相变材料，并将相变层限制在电介质层的凹槽中。在相变层和电介质层上形成顶部电极。

4. 发明授权

US5148325A Vehicular external mirror assembly 失效
标题翻译：车载外镜组件
公开(公告)号：US5148325A
公开(公告)日：1992-09-15
申请号：US805530
申请日：1991-12-11
申请人： Min-Chih Wang
发明人： Min-Chih Wang
IPC分类号： B60R1/062
CPC分类号： B60R1/062
摘要： A vehicular external mirror assembly includes a casing having a mirror unit and a tubular member. A first tube has a twisted oblique elongated slot extending longitudinally between a first open top and a first open bottom end of the first tube. The tubular member is slidably sleeved onto the first tube. A threaded rotatable shaft is mounted in the first tube. An elevating unit includes an annular member threadably engaging the rotatable shaft. The annular member has a radial stud projecting through said elongated slot slidably to engage the same and being connected to the tabular member of the casing. An electrical driving unit connected to a lower end of the rotatable shaft includes a motor and a gear assembly interconnecting the lower end of the rotatable shaft and the motor.
摘要翻译：车辆外部镜组件包括具有镜子单元和管状构件的壳体。第一管具有在第一管的第一开口顶部和第一开放底端之间纵向延伸的扭曲的倾斜细长槽。管状构件可滑动地套在第一管上。螺纹旋转轴安装在第一管中。升降单元包括与可旋转轴螺纹接合的环形构件。环形构件具有径向的突出部，其突出通过所述细长狭槽，其可滑动地与其接合并且连接到壳体的平板状构件。连接到可旋转轴的下端的电驱动单元包括电动机和将可旋转轴的下端与电动机互连的齿轮组件。

5. 发明授权

US07037825B2 Damascene method capable of avoiding copper extrusion 有权
标题翻译：可以避免铜挤压的大马士革方法
公开(公告)号：US07037825B2
公开(公告)日：2006-05-02
申请号：US10711259
申请日：2004-09-06
申请人： Min-Chih Wang
发明人： Min-Chih Wang
IPC分类号： H01L21/4763
CPC分类号： H01L21/76828 , H01L21/76802 , H01L21/76807 , H01L21/76814
摘要： A method for avoiding copper extrusion during a damascene process is disclosed. A semiconductor wafer including a substrate with at least one copper conductive wire on the substrate is provided. A dielectric layer on the copper conductive wire is formed. A damascene structure having an opening exposing a portion of the copper conductive wire is formed using the dielectric layer. A degassing process to make gas escape from the dielectric layer is performed. A barrier layer on portions of the exposed surface of the copper conductive wire and the damascene structure of the dielectric layer is formed. A conductive layer on the barrier layer is formed.
摘要翻译：公开了一种在镶嵌过程中避免铜挤压的方法。提供了包括在基板上具有至少一根铜导线的基板的半导体晶片。形成铜导线上的电介质层。使用电介质层形成具有露出铜导电线的一部分的开口的镶嵌结构。进行使气体从电介质层逸出的脱气处理。形成铜导电线的露出表面的部分上的阻挡层和电介质层的镶嵌结构。形成阻挡层上的导电层。

6. 发明申请

US20060051962A1 DAMASCENE METHOD CAPABLE OF AVOIDING COPPER EXTRUSION 有权
标题翻译：可以避免铜挤压的大理石方法
公开(公告)号：US20060051962A1
公开(公告)日：2006-03-09
申请号：US10711259
申请日：2004-09-06
申请人： Min-Chih Wang
发明人： Min-Chih Wang
IPC分类号： H01L21/44
CPC分类号： H01L21/76828 , H01L21/76802 , H01L21/76807 , H01L21/76814
摘要： A method for avoiding copper extrusion during a damascene process is disclosed. A semiconductor wafer including a substrate with at least one copper conductive wire on the substrate is provided. A dielectric layer on the copper conductive wire is formed. A damascene structure having an opening exposing a portion of the copper conductive wire is formed using the dielectric layer. A degassing process to make gas escape from the dielectric layer is performed. A barrier layer on portions of the exposed surface of the copper conductive wire and the damascene structure of the dielectric layer is formed. A conductive layer on the barrier layer is formed.
摘要翻译：公开了一种在镶嵌过程中避免铜挤压的方法。提供了包括在基板上具有至少一根铜导线的基板的半导体晶片。形成铜导线上的电介质层。使用电介质层形成具有露出铜导电线的一部分的开口的镶嵌结构。进行使气体从电介质层逸出的脱气处理。形成铜导电线的露出表面的部分上的阻挡层和电介质层的镶嵌结构。形成阻挡层上的导电层。

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