会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明授权
    • Substrate-free light emitting diode
    • 无基板发光二极管
    • US07973330B2
    • 2011-07-05
    • US12510255
    • 2009-07-27
    • Chien-Cheng YangZhi-Cheng HsiaoGen-Wen Hsieh
    • Chien-Cheng YangZhi-Cheng HsiaoGen-Wen Hsieh
    • H01L33/00
    • H01L33/0079
    • A substrate-free light emitting diode (LED) including an epitaxy layer, a conductive supporting layer, and a first contact pad is provided. The epitaxy layer includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer. The light emitting layer is disposed on the first type doped semiconductor layer, and a portion of the first type doped semiconductor layer is exposed. The second type doped semiconductor layer and the conductive supporting layer are sequentially disposed on the second type doped semiconductor layer. The first contact pad is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The first contact pad and the conductive supporting layer serving as an electrode are disposed on the same side of the epitaxy layer to avoid the light shielding effects of the electrode to improve the front light emitting efficiency of the LED.
    • 提供了包括外延层,导电支撑层和第一接触焊盘的无基板的发光二极管(LED)。 外延层包括第一掺杂半导体层,发光层和第二掺杂半导体层。 发光层设置在第一掺杂半导体层上,第一掺杂半导体层的一部分露出。 第二类掺杂半导体层和导电支撑层依次设置在第二掺杂半导体层上。 第一接触焊盘设置在暴露的第一型掺杂半导体层上并与其电连接。 用作电极的第一接触焊盘和导电支撑层设置在外延层的同一侧,以避免电极的遮光效应,以提高LED的前发光效率。
    • 7. 发明申请
    • SUBSTRATE-FREE LIGHT EMITTING DIODE
    • 无基板发光二极管
    • US20090283750A1
    • 2009-11-19
    • US12510255
    • 2009-07-27
    • Chien-Cheng YangZhi-Cheng HsiaoGen-Wen Hsieh
    • Chien-Cheng YangZhi-Cheng HsiaoGen-Wen Hsieh
    • H01L33/00
    • H01L33/0079
    • A substrate-free light emitting diode (LED) including an epitaxy layer, a conductive supporting layer, and a first contact pad is provided. The epitaxy layer includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer. The light emitting layer is disposed on the first type doped semiconductor layer, and a portion of the first type doped semiconductor layer is exposed. The second type doped semiconductor layer and the conductive supporting layer are sequentially disposed on the second type doped semiconductor layer. The first contact pad is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The first contact pad and the conductive supporting layer serving as an electrode are disposed on the same side of the epitaxy layer to avoid the light shielding effects of the electrode to improve the front light emitting efficiency of the LED.
    • 提供了包括外延层,导电支撑层和第一接触焊盘的无基板的发光二极管(LED)。 外延层包括第一掺杂半导体层,发光层和第二掺杂半导体层。 发光层设置在第一掺杂半导体层上,第一掺杂半导体层的一部分露出。 第二类掺杂半导体层和导电支撑层依次设置在第二掺杂半导体层上。 第一接触焊盘设置在暴露的第一型掺杂半导体层上并与其电连接。 用作电极的第一接触焊盘和导电支撑层设置在外延层的同一侧,以避免电极的遮光效应,以提高LED的前发光效率。
    • 10. 发明授权
    • Fabrication method of substrate-free light emitting diode
    • 无基板发光二极管的制造方法
    • US07682855B2
    • 2010-03-23
    • US11461436
    • 2006-07-31
    • Chien-Cheng YangZhi-Cheng HsiaoGen-Wen Hsieh
    • Chien-Cheng YangZhi-Cheng HsiaoGen-Wen Hsieh
    • H01L21/00
    • H01L33/0079
    • A substrate-free light emitting diode (LED) including an epitaxy layer, a conductive supporting layer, and a first contact pad is provided. The epitaxy layer includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer. The light emitting layer is disposed on the first type doped semiconductor layer, and a portion of the first type doped semiconductor layer is exposed. The second type doped semiconductor layer and the conductive supporting layer are sequentially disposed on the second type doped semiconductor layer. The first contact pad is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The first contact pad and the conductive supporting layer serving as an electrode are disposed on the same side of the epitaxy layer to avoid the light shielding effects of the electrode to improve the front light emitting efficiency of the LED.
    • 提供了包括外延层,导电支撑层和第一接触焊盘的无基板的发光二极管(LED)。 外延层包括第一掺杂半导体层,发光层和第二掺杂半导体层。 发光层设置在第一掺杂半导体层上,第一掺杂半导体层的一部分露出。 第二类掺杂半导体层和导电支撑层依次设置在第二掺杂半导体层上。 第一接触焊盘设置在暴露的第一型掺杂半导体层上并与其电连接。 用作电极的第一接触焊盘和导电支撑层设置在外延层的同一侧,以避免电极的遮光效应,以提高LED的前发光效率。