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    • 3. 发明申请
    • APPARATUSES FOR MANAGING AND ACCESSING FLASH MEMORY MODULE
    • 用于管理和访问闪存模块的设备
    • US20110289255A1
    • 2011-11-24
    • US13113376
    • 2011-05-23
    • Chi-Lung WANGChia-Hsin CHENChien-Cheng LIN
    • Chi-Lung WANGChia-Hsin CHENChien-Cheng LIN
    • G06F12/10G06F12/00
    • G06F12/0246G06F12/10G06F2212/7201
    • A method for maintaining address mapping for a flash memory module is disclosed including: recording a first set of addresses corresponding to a first set of sequential logical addresses in a first section of a first addressing block; recording a second set of addresses corresponding to a second set of sequential logical addresses in a second section of the first addressing block; recording a third set of addresses corresponding to a third set of sequential logical addresses in a first section of a second addressing block; and recording a fourth set of addresses corresponding to a fourth set of sequential logical addresses in a second section of the second addressing block; wherein the second set of logical addresses is successive to the first set of logical addresses, and the third set of logical addresses is successive to the second set of logical addresses.
    • 公开了一种用于维护闪存模块的地址映射的方法,包括:在第一寻址块的第一部分中记录对应于第一组顺序逻辑地址的第一组地址; 在第一寻址块的第二部分中记录对应于第二组顺序逻辑地址的第二组地址; 在第二寻址块的第一部分中记录对应于第三组顺序逻辑地址的第三组地址; 以及在所述第二寻址块的第二部分中记录与第四组顺序逻辑地址对应的第四组地址; 其中所述第二组逻辑地址连续到所述第一组逻辑地址,并且所述第三组逻辑地址连续到所述第二组逻辑地址。
    • 7. 发明申请
    • MEMORY MODULE AND METHOD FOR PERFORMING WEAR-LEVELING OF MEMORY MODULE
    • 用于执行存储器模块磨损的存储器模块和方法
    • US20090287875A1
    • 2009-11-19
    • US12121108
    • 2008-05-15
    • Chien-Cheng LIN
    • Chien-Cheng LIN
    • G06F12/02
    • G06F12/0246
    • The invention comprises a memory module capable of wear-leveling. In one embodiment, the memory module comprises a flash memory and a controller. The flash memory comprises a plurality of management units, wherein each of the management units comprises a plurality of blocks. The controller receives new data with a logical address managed by a first management unit selected from the management units, pops a first spare block from a spare area of the first management unit, determines whether an erase count of the first spare block is greater than a first threshold value, searches a second management unit selected from the management units for a replacing block with an erase count lower than a second threshold value when the erase count of the first spare block is greater than the first threshold value, and directs the first management unit and the second management unit to exchange the first spare block with the replacing block.
    • 本发明包括能够磨损平整的存储器模块。 在一个实施例中,存储器模块包括闪速存储器和控制器。 闪速存储器包括多个管理单元,其中每个管理单元包括多个块。 控制器接收具有由从管理单元选择的第一管理单元管理的逻辑地址的新数据,从第一管理单元的备用区弹出第一备用块,确定第一备用块的擦除次数是否大于 当所述第一备用块的擦除次数大于所述第一阈值时,搜索从所述管理单元中选择的替换块的擦除次数小于第二阈值的第二管理单元,并且指示所述第一管理 单元和第二管理单元与替换块交换第一备用块。