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1. 发明申请

US20080038050A1 ROTARY MECHANISMS 审中-公开
标题翻译：旋转机构
公开(公告)号：US20080038050A1
公开(公告)日：2008-02-14
申请号：US11734719
申请日：2007-04-12
申请人： Chien Chen , Hsin Lin , Chia Lin , Wen Wang
发明人： Chien Chen , Hsin Lin , Chia Lin , Wen Wang
IPC分类号： F16D1/12
CPC分类号： F16M11/2064 , E05D3/10 , E05D11/087 , E05Y2900/606 , F16M11/105 , F16M2200/024 , F16M2200/044 , Y10T403/32081
摘要： Rotary mechanisms are provided. A rotary mechanism comprises a first member, a second member rotatable with respect to the first member along a first axis, and a first washer fixed to the first member. The first washer comprises a plurality of protrusions projecting toward the second member. The second washer is fixed to the second member and comprises a plurality of sliding surfaces, a plurality of depressions respectively disposed between the sliding surfaces, and a plurality of openings formed on the sliding surfaces. The protrusions are joined in the openings when the second member rotates to an angle with respect to the first member.
摘要翻译：提供旋转机构。旋转机构包括第一构件，可沿第一轴线相对于第一构件旋转的第二构件和固定到第一构件的第一垫圈。第一垫圈包括朝向第二构件突出的多个突起。第二垫圈固定在第二构件上，并且包括多个滑动表面，分别设置在滑动表面之间的多个凹部和形成在滑动表面上的多个开口。当第二构件相对于第一构件旋转一定角度时，突出部在开口中接合。

2. 发明申请

US20050270850A1 Nonvolatile flash memory and method of operating the same 有权
标题翻译：非易失闪存及其操作方法
公开(公告)号：US20050270850A1
公开(公告)日：2005-12-08
申请号：US10861392
申请日：2004-06-07
申请人： Lee Wang , Daniel Huang , Hsin Lin , Roget Chang
发明人： Lee Wang , Daniel Huang , Hsin Lin , Roget Chang
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C16/0416 , G11C16/3477 , G11C2216/10
摘要： A nonvolatile memory and a method of operating the same are proposed. The nonvolatile memory has single-gate memory cells, wherein a structure of a transistor and a capacitor is embedded in a semiconductor substrate. The transistor comprises a first conducting gate stacked on the surface of a dielectric with doped regions formed at two sides thereof as a source and a drain. The capacitor comprises a doped region, a dielectric stacked thereon, and a second conducting gate. The conducting gates of the capacitor and the transistor are electrically connected together to form a single floating gate of the memory cell. The semiconductor substrate is p-type or n-type. Besides, a back-bias program write-in and related erase and readout operation ways are proposed for the single-gate memory cells.
摘要翻译：提出了一种非易失性存储器及其操作方法。非易失性存储器具有单栅极存储单元，其中晶体管和电容器的结构嵌入在半导体衬底中。晶体管包括堆叠在电介质的表面上的第一导电栅，其两侧形成有掺杂区域作为源极和漏极。电容器包括掺杂区域，堆叠在其上的电介质和第二导电栅极。电容器和晶体管的导通栅极电连接在一起以形成存储单元的单个浮置栅极。半导体衬底是p型或n型。此外，针对单栅极存储器单元提出了背偏置程序写入和相关的擦除和读出操作方式。

3. 发明申请

US20070158733A1 High-speed low-voltage programming and self-convergent high-speed low-voltage erasing schemes for EEPROM 审中-公开
标题翻译：用于EEPROM的高速低压编程和自适应高速低电压擦除方案
公开(公告)号：US20070158733A1
公开(公告)日：2007-07-12
申请号：US11327436
申请日：2006-01-09
申请人： Daniel Huang , Lee Wang , Hsin Lin , Roget Chang
发明人： Daniel Huang , Lee Wang , Hsin Lin , Roget Chang
IPC分类号： H01L29/788
CPC分类号： H01L29/7885 , G11C16/0416 , G11C16/10 , G11C16/14
摘要： The present invention provides a high-speed low-voltage programming scheme and self-convergent high-speed low-voltage erasing schemes for Electrically Erasable Programmable Read-Only Memories (EEPROM). For the N-type Field Effect Transistor (NFET) based NVM programming, an elevated source voltage to the substrate can achieve high efficient Drain-Avalanche-Hot-Electron Injection (DAHEI) into the floating gate resulting in high-speed and low-voltage operations. The self-convergent and low-voltage erasing can be achieved by applying Drain-Avalanche-Hot Hole Injection (DAHHI) with the conditions of restricted maximum drain current and a moderate control gate voltage enough to turn on the NFET. For the p-type FET (PFET) based EEPROM programming, a negative source voltage relative to the substrate can achieve high efficient Drain-Avalanche-Hot-Hole Injection (DAHHI) into the floating gate resulting in high-speed and low voltage operations. The self-convergent and low voltage erasing can be achieved by applying Drain-Avalanche-Hot-Electron Injection (DAHEI) with the conditions of restricted maximum magnitude of drain current and a negative moderate control gate voltage enough to turn on the PFET.
摘要翻译：本发明提供了用于电可擦除可编程只读存储器（EEPROM）的高速低压编程方案和自会聚高速低电压擦除方案。对于基于N型场效应晶体管（NFET）的NVM编程，提高到衬底的源极电压可以实现高效率的漏极 - 雪崩 - 热电子注入（DAHEI）到浮动栅极，从而产生高速和低电压操作。通过应用漏极 - 雪崩 - 热孔注入（DAHHI），可以实现自收敛和低电压擦除，其条件是限制最大漏极电流和适度的控制栅极电压足以导通NFET。对于基于P型FET（PFET）的EEPROM编程，相对于衬底的负电源电压可以实现高效率的漏 - 雪 - 热孔注入（DAHHI）到浮栅中，从而实现高速和低电压操作。通过施加漏极 - 雪崩热电子注入（DAHEI），限制漏极电流的最大值限制和足够的负的中等控制栅极电压来打开PFET，可实现自收敛和低电压擦除。

4. 发明申请

US20060024309A1 Methods of treating type I diabetes by blocking VEGF-mediated activity 有权
标题翻译：通过阻断VEGF介导的活性治疗I型糖尿病的方法
公开(公告)号：US20060024309A1
公开(公告)日：2006-02-02
申请号：US11193746
申请日：2005-07-29
申请人： Jingtai Cao , Li-Hsien Wang , Hsin Lin , Mark Sleeman , Stanley Wiegand
发明人： Jingtai Cao , Li-Hsien Wang , Hsin Lin , Mark Sleeman , Stanley Wiegand
IPC分类号： A61K39/395 , A61K38/28 , A61K48/00
CPC分类号： A61K38/179 , A61K38/28 , A61K48/00 , C12N15/1136 , C12N2310/11 , C12N2310/14 , A61K2300/00
摘要： Methods of treating diabetes in mammals, particularly humans, by blocking or inhibiting VEGF-mediated activity. A preferred inhibitor of VEGF-mediated activity is a VEGF antagonist such as the VEGF fusion protein trap of SEQ ID NO:2 capable of binding and blocking VEGF. The method of the invention may be combined with other therapies, such as with insulin therapy.
摘要翻译：通过阻断或抑制VEGF介导的活性来治疗哺乳动物，特别是人类的糖尿病的方法。 VEGF介导的活性的优选抑制剂是VEGF拮抗剂，例如能够结合和阻断VEGF的SEQ ID NO：2的VEGF融合蛋白捕获物。本发明的方法可以与其它疗法组合，例如用胰岛素治疗。

5. 发明申请

US20120197814A1 CONTENT ENDORSEMENT 审中-公开
标题翻译：内容认可
公开(公告)号：US20120197814A1
公开(公告)日：2012-08-02
申请号：US13015005
申请日：2011-01-27
申请人： Hsin Lin
发明人： Hsin Lin
IPC分类号： G06Q30/00
CPC分类号： G06Q10/10 , G06Q30/02 , G06Q50/01
摘要： A computer-implemented method for content endorsement includes receiving, at a server, postings from posters; receiving, for each posting, a posting fee; receiving endorsements drawn by the postings; receiving, for each endorsement, an endorsement fee; collecting the endorsement fees into a pot; based on the endorsements, defining a subset of postings; and allocating at least a portion of the pot to postings in the subset of postings.
摘要翻译：用于内容认可的计算机实现的方法包括在服务器处接收来自海报的过帐; 收取每张贴子的贴子费用; 接受贴子所签署的背书; 接受每个背书的背书费用; 收取支票费用; 基于认可，定义一个帖子的子集; 以及将所述锅的至少一部分分配给所述过帐子集中的过帐。

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