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1. 发明授权

US07986384B2 LCD panel with light-shielding structure and image display system using same 有权
标题翻译：液晶面板采用遮光结构和图像显示系统使用相同
公开(公告)号：US07986384B2
公开(公告)日：2011-07-26
申请号：US12357238
申请日：2009-01-21
申请人： Chieh-Wen Lin , Kuan-Chih Chen , Kuo-Chao Chen
发明人： Chieh-Wen Lin , Kuan-Chih Chen , Kuo-Chao Chen
IPC分类号： G02F1/1333
CPC分类号： H01L29/78633 , G02F1/136209 , G02F2001/136231 , H01L27/124 , H01L27/1255
摘要： A display panel is used with an image display system. The display panel includes a light-transmissive substrate, a gate insulating layer, a gate conductor, a first light-shielding structure, a channel layer and a second light-shielding structure. The gate insulating layer is formed over the light-transmissive substrate. The gate conductor and the first light-shielding structure are made of the same material, formed over the gate insulating layer, and electrically isolated from each other. The first light-shielding structure has a hollow portion. The channel layer and the second light-shielding structure made of the same material and formed over the light-transmissive substrate but under the gate insulating layer. The second light-shielding structure is disposed under the hollow portion of the first light-shielding structure.
摘要翻译：显示面板与图像显示系统一起使用。显示面板包括透光基板，栅极绝缘层，栅极导体，第一遮光结构，沟道层和第二遮光结构。栅极绝缘层形成在透光基板上。栅导体和第一遮光结构由形成在栅极绝缘层上并彼此电隔离的相同材料制成。第一遮光结构具有中空部分。沟道层和第二遮光结构由相同的材料制成并形成在透光基片上但栅极绝缘层下方。第二遮光结构设置在第一遮光结构的中空部分的下方。

2. 发明申请

US20090185118A1 LCD PANEL WITH LIGHT-SHIELDING STRUCTURE AND IMAGE DISPLAY SYSTEM USING SAME 有权
标题翻译：具有遮光结构的LCD面板和使用相同的图像显示系统
公开(公告)号：US20090185118A1
公开(公告)日：2009-07-23
申请号：US12357238
申请日：2009-01-21
申请人： Chieh-Wen Lin , Kuan-Chih Chen , Kuo-Chao Chen
发明人： Chieh-Wen Lin , Kuan-Chih Chen , Kuo-Chao Chen
IPC分类号： G02F1/1333 , H01L27/12
CPC分类号： H01L29/78633 , G02F1/136209 , G02F2001/136231 , H01L27/124 , H01L27/1255
摘要： A display panel is used with an image display system. The display panel includes a light-transmissive substrate, a gate insulating layer, a gate conductor, a first light-shielding structure, a channel layer and a second light-shielding structure. The gate insulating layer is formed over the light-transmissive substrate. The gate conductor and the first light-shielding structure are made of the same material, formed over the gate insulating layer, and electrically isolated from each other. The first light-shielding structure has a hollow portion. The channel layer and the second light-shielding structure made of the same material and formed over the light-transmissive substrate but under the gate insulating layer. The second light-shielding structure is disposed under the hollow portion of the first light-shielding structure.
摘要翻译：显示面板与图像显示系统一起使用。显示面板包括透光基板，栅极绝缘层，栅极导体，第一遮光结构，沟道层和第二遮光结构。栅极绝缘层形成在透光基板上。栅导体和第一遮光结构由形成在栅极绝缘层上并彼此电隔离的相同材料制成。第一遮光结构具有中空部分。沟道层和第二遮光结构由相同的材料制成并形成在透光基片上但栅极绝缘层下方。第二遮光结构设置在第一遮光结构的中空部分的下方。

3. 发明申请

US20100271349A1 THIN FILM TRANSISTOR DEVICES FOR OLED DISPLAYS AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：用于OLED显示器的薄膜晶体管器件及其制造方法
公开(公告)号：US20100271349A1
公开(公告)日：2010-10-28
申请号：US12715316
申请日：2010-03-01
申请人： Yu-Chung Liu , Te-Yu Lee , Te-Chang Wan , Kuo-Chao Chen , Mei-Ling Chang
发明人： Yu-Chung Liu , Te-Yu Lee , Te-Chang Wan , Kuo-Chao Chen , Mei-Ling Chang
IPC分类号： G09G5/00 , H01L33/16
CPC分类号： H01L27/1251 , G09G3/3225 , H01L27/1229 , H01L27/3262
摘要： A system for displaying images. The system includes a thin film transistor (TFT) device including a first gate layer disposed on a first region of a substrate and covered by a first insulating layer. A first polysilicon active layer is disposed on the first insulating layer and a second polysilicon layer is disposed on a second region of the substrate. A second insulating layer covers both of the first and second polysilicon gate layers. Second and third gate layers are respectively disposed on the second insulating layer above the first and second polysilicon active layers. A method for fabricating a system for displaying images including the TFT device is also disclosed.
摘要翻译：用于显示图像的系统。该系统包括薄膜晶体管（TFT）器件，其包括设置在衬底的第一区域上并被第一绝缘层覆盖的第一栅极层。第一多晶硅有源层设置在第一绝缘层上，第二多晶硅层设置在衬底的第二区域上。第二绝缘层覆盖第一和第二多晶硅栅极层。第二和第三栅极层分别设置在第一和第二多晶硅有源层上方的第二绝缘层上。还公开了一种用于制造用于显示包括TFT器件的图像的系统的方法。

4. 发明授权

US08183064B2 Thin film transistor devices for OLED displays and method for fabricating the same 有权
标题翻译：用于OLED显示器的薄膜晶体管器件及其制造方法
公开(公告)号：US08183064B2
公开(公告)日：2012-05-22
申请号：US12715316
申请日：2010-03-01
申请人： Yu-Chung Liu , Te-Yu Lee , Te-Chang Wan , Kuo-Chao Chen , Mei-Ling Chang
发明人： Yu-Chung Liu , Te-Yu Lee , Te-Chang Wan , Kuo-Chao Chen , Mei-Ling Chang
IPC分类号： H01L21/00 , H01L29/04 , H01L31/036 , G09G5/00
CPC分类号： H01L27/1251 , G09G3/3225 , H01L27/1229 , H01L27/3262
摘要： A system for displaying images. The system includes a thin film transistor (TFT) device including a first gate layer disposed on a first region of a substrate and covered by a first insulating layer. A first polysilicon active layer is disposed on the first insulating layer and a second polysilicon layer is disposed on a second region of the substrate. A second insulating layer covers both of the first and second polysilicon gate layers. Second and third gate layers are respectively disposed on the second insulating layer above the first and second polysilicon active layers. A method for fabricating a system for displaying images including the TFT device is also disclosed.
摘要翻译：用于显示图像的系统。该系统包括薄膜晶体管（TFT）器件，其包括设置在衬底的第一区域上并被第一绝缘层覆盖的第一栅极层。第一多晶硅有源层设置在第一绝缘层上，第二多晶硅层设置在衬底的第二区域上。第二绝缘层覆盖第一和第二多晶硅栅极层。第二和第三栅极层分别设置在第一和第二多晶硅有源层上方的第二绝缘层上。还公开了一种用于制造用于显示包括TFT器件的图像的系统的方法。

5. 发明授权

US08158985B2 Thin film transistor devices with different electrical characteristics and method for fabricating the same 有权
标题翻译：具有不同电特性的薄膜晶体管器件及其制造方法
公开(公告)号：US08158985B2
公开(公告)日：2012-04-17
申请号：US12651998
申请日：2010-01-04
申请人： Yu-Chung Liu , Te-Yu Lee , Te-Chang Wan , Kuo-Chao Chen , Mei-Ling Chang
发明人： Yu-Chung Liu , Te-Yu Lee , Te-Chang Wan , Kuo-Chao Chen , Mei-Ling Chang
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L27/1251 , H01L27/1229 , H01L27/1248
摘要： A system for displaying images. The system includes a thin film transistor (TFT) device including a first insulating layer covering a first region and a second region of a substrate. A first polysilicon active layer is disposed in the first region and between the substrate and the first insulating layer. A second polysilicon active layer is disposed on the first insulating layer in the second region. A polysilicon gate layer is disposed above the first polysilicon active layer. A second insulating layer covers the polysilicon gate layer and the second polysilicon active layer. A metal gate layer is disposed above the second polysilicon active layer. A method for fabricating the system for displaying images including the TFT device is also disclosed.
摘要翻译：用于显示图像的系统。该系统包括薄膜晶体管（TFT）器件，其包括覆盖衬底的第一区域和第二区域的第一绝缘层。第一多晶硅有源层设置在第一区域中以及衬底和第一绝缘层之间。第二多晶硅有源层设置在第二区域中的第一绝缘层上。多晶硅栅极层设置在第一多晶硅有源层上方。第二绝缘层覆盖多晶硅栅极层和第二多晶硅活性层。金属栅极层设置在第二多晶硅有源层上方。还公开了一种用于制造用于显示包括TFT器件的图像的系统的方法。

6. 发明申请

US20100181574A1 THIN FILM TRANSISTOR DEVICES WITH DIFFERENT ELECTRICAL CHARACTERISTICS AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：具有不同电气特性的薄膜晶体管器件及其制造方法
公开(公告)号：US20100181574A1
公开(公告)日：2010-07-22
申请号：US12651998
申请日：2010-01-04
申请人： Yu-Chung Liu , Te-Yu Lee , Te-Chang Wan , Kuo-Chao Chen , Mei-Ling Chang
发明人： Yu-Chung Liu , Te-Yu Lee , Te-Chang Wan , Kuo-Chao Chen , Mei-Ling Chang
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L27/1251 , H01L27/1229 , H01L27/1248
摘要： A system for displaying images. The system includes a thin film transistor (TFT) device including a first insulating layer covering a first region and a second region of a substrate. A first polysilicon active layer is disposed in the first region and between the substrate and the first insulating layer. A second polysilicon active layer is disposed on the first insulating layer in the second region. A polysilicon gate layer is disposed above the first polysilicon active layer. A second insulating layer covers the polysilicon gate layer and the second polysilicon active layer. A metal gate layer is disposed above the second polysilicon active layer. A method for fabricating the system for displaying images including the TFT device is also disclosed.
摘要翻译：用于显示图像的系统。该系统包括薄膜晶体管（TFT）器件，其包括覆盖衬底的第一区域和第二区域的第一绝缘层。第一多晶硅有源层设置在第一区域中以及衬底和第一绝缘层之间。第二多晶硅有源层设置在第二区域中的第一绝缘层上。多晶硅栅极层设置在第一多晶硅有源层上方。第二绝缘层覆盖多晶硅栅极层和第二多晶硅活性层。金属栅极层设置在第二多晶硅有源层上方。还公开了一种用于制造用于显示包括TFT器件的图像的系统的方法。

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