会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF
    • 薄膜晶体管及其制造方法
    • US20090230400A1
    • 2009-09-17
    • US12198081
    • 2008-08-25
    • Chia-Wen ChangJiun-Jia HuangTzu-Heng ChangTan-Fu LeiSzu-Fen Chen
    • Chia-Wen ChangJiun-Jia HuangTzu-Heng ChangTan-Fu LeiSzu-Fen Chen
    • H01L21/336H01L29/786
    • H01L29/78696H01L29/66757H01L29/66787H01L29/785
    • A method for fabricating a thin film transistor is described. The method includes: providing a substrate; forming a sacrificial layer on the substrate; forming a polysilicon pattern layer on the substrate to surround the sacrificial layer; forming a gate insulation layer to cover at least the polysilicon pattern layer; forming a gate pattern on the gate insulation layer above the polysilicon pattern layer; forming a source region, a drain region, and an active region in the polysilicon pattern layer, wherein the active region is between the source region and the drain region; forming a passivation layer to cover the gate pattern and a portion of the gate insulation layer; forming a source conductive layer and a drain conductive layer on the passivation layer, wherein the source conductive layer and the drain conductive layer are electrically connected to the source region and the drain region of the polysilicon pattern layer respectively.
    • 对薄膜晶体管的制造方法进行说明。 该方法包括:提供衬底; 在所述基板上形成牺牲层; 在所述衬底上形成多晶硅图案层以围绕所述牺牲层; 形成栅绝缘层以至少覆盖所述多晶硅图案层; 在多晶硅图案层上方的栅极绝缘层上形成栅极图案; 在所述多晶硅图案层中形成源极区,漏极区和有源区,其中所述有源区在所述源极区和所述漏极区之间; 形成钝化层以覆盖所述栅极图案和所述栅极绝缘层的一部分; 在所述钝化层上形成源极导电层和漏极导电层,其中所述源极导电层和所述漏极导电层分别电连接到所述多晶硅图案层的源极区域和所述漏极区域。