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1. 发明授权

US09127356B2 Sputtering target with reverse erosion profile surface and sputtering system and method using the same 有权
标题翻译：具有反侵蚀曲面和溅射系统的溅射靶及其使用方法
公开(公告)号：US09127356B2
公开(公告)日：2015-09-08
申请号：US13212217
申请日：2011-08-18
申请人： Chia-Liang Chueh , Kuo-Chou Chen , Ren-Dou Lee , Hsien-Liang Meng , Chun-Wei Lin
发明人： Chia-Liang Chueh , Kuo-Chou Chen , Ren-Dou Lee , Hsien-Liang Meng , Chun-Wei Lin
IPC分类号： C23C14/35 , C23C14/34 , H01J37/34
CPC分类号： C23C14/35 , C23C14/3407 , H01J37/3405 , H01J37/3423 , H01J37/3482
摘要： A sputtering target is provided that includes a planar backing plate and a target material formed over the planar backing plate and including an uneven sputtering surface including thick portions and thin portions and configured in conjunction with a sputtering apparatus such as a magnetron sputtering tool with a fixed magnet arrangement. The uneven surface is designed in conjunction with the magnetic fields that will be produced by the magnet arrangement such that the thicker target portions are positioned at locations where target erosion occurs at a high rate. Also provided is the magnetron sputtering system and a method for utilizing the target with uneven sputtering surface such that the thickness across the target to become more uniform in time as the target is used.
摘要翻译：提供了一种溅射靶，其包括平面背板和形成在平面背板上的目标材料，并且包括具有厚部分和薄部分的不均匀溅射表面，并且与诸如具有固定的磁控溅射工具的溅射装置磁铁排列。不平坦表面与由磁体布置产生的磁场结合设计，使得较厚的目标部分位于高速率发生目标侵蚀的位置。还提供了磁控管溅射系统以及利用不均匀溅射表面的靶的方法，使得目标物上的厚度随着靶物的时间变得更加均匀。

2. 发明授权

US06531415B1 Silicon nitride furnace tube low temperature cycle purge for attenuated particle formation 有权
标题翻译：氮化硅炉管低温循环吹扫用于减弱颗粒形成
公开(公告)号：US06531415B1
公开(公告)日：2003-03-11
申请号：US10060482
申请日：2002-01-30
申请人： Wan-Cheng Yang , Ren-Dou Lee
发明人： Wan-Cheng Yang , Ren-Dou Lee
IPC分类号： H01L2131
CPC分类号： C23C16/4408 , C23C16/345 , H01L21/3185
摘要： A method for forming upon a substrate employed within a microelectronics fabrication a silicon nitride dielectric layer with attenuated defects and inhomogeneities. There is provided one or more substrates. There is then provided a reactor tube which is part of an apparatus suitable for providing various gases at elevated temperatures. There is then purged the reactor tube with an inert gas in a low temperature cycle purge (LTCP) step at a temperature below deposition temperature. There is then placed the substrate(s) within a reactor tube. There is then deposited a silicon nitride dielectric layer upon the substrate(s), employing silane and ammonia gases employing a low pressure chemical vapor deposition (LPCVD) method. There is then purged the reaction tube at a temperature below the deposition temperature, followed by removal of the substrate carrier with attenuated formation of particulates and inhomogeneities within and about the silicon nitride layer and reaction tube.
摘要翻译：一种用于在微电子制造中使用的衬底上形成具有减弱的缺陷和不均匀性的氮化硅介电层的方法。提供一个或多个基底。然后提供反应器管，其是适于在升高的温度下提供各种气体的装置的一部分。然后在低于沉积温度的温度下，在低温循环清洗（LTCP）步骤中用惰性气体吹扫反应器管。然后将基底放置在反应器管内。然后使用采用低压化学气相沉积（LPCVD）方法的硅烷和氨气体在衬底上沉积氮化硅介电层。然后在低于沉积温度的温度下吹扫反应管，随后在氮化硅层和反应管内和周围减少微粒形成和不均匀性去除衬底载体。

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