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    • 1. 发明申请
    • GATED-VARACTORS
    • 浇口式变送器
    • US20110204969A1
    • 2011-08-25
    • US12708603
    • 2010-02-19
    • Chia-Chung CHENChewn-Pu JouChin Wei KuoSally Liu
    • Chia-Chung CHENChewn-Pu JouChin Wei KuoSally Liu
    • H01G7/00H01L21/329H01L29/93
    • H01L29/93H01L29/7391H01L29/94
    • Various embodiments of the invention provide a varactor structure that, depends on configurations, can provide a C-V characteristic based on one or a combination of a reverse bias junction capacitor, a channel capacitor, and an oxide capacitor. The junction capacitor is formed by reverse biasing the P+ source region and the N-well. The channel capacitance is formed between the P+ source region and the N+ drain region, and the oxide capacitor is formed in the gate oxide area. Depending on biasing one or a combination of the gate voltage VG, the source voltage VS, and the drain voltage VD, embodiments can utilize one or a combination of the above capacitors. Other embodiments using the varactors in a Voltage-Controlled Oscillator (VCO) are also disclosed.
    • 本发明的各种实施例提供了一种变容二极管结构,其取决于配置,可以提供基于反向偏置结电容器,沟道电容器和氧化物电容器中的一个或其组合的C-V特性。 结电容器通过反向偏置P +源极区域和N阱来形成。 在P +源极区域和N +漏极区域之间形成沟道电容,并且在栅极氧化物区域形成氧化物电容器。 取决于偏压栅极电压VG,源极电压VS和漏极电压VD的一个或组合,实施例可以利用上述电容器中的一个或组合。 还公开了在压控振荡器(VCO)中使用变容二极管的其它实施例。