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1. 发明授权

US08350260B2 Transistor structure 有权
标题翻译：晶体管结构
公开(公告)号：US08350260B2
公开(公告)日：2013-01-08
申请号：US13013828
申请日：2011-01-26
申请人： Chia-Chun Yeh , Henry Wang , Yao-Chou Tsai , Sung-Hui Huang
发明人： Chia-Chun Yeh , Henry Wang , Yao-Chou Tsai , Sung-Hui Huang
IPC分类号： H01L51/10
CPC分类号： H01L51/0096 , H01L27/283 , H01L27/286
摘要： A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-type transparent oxide semiconductor comprising a first portion and a second portion so that the patterned N-type transparent oxide semiconductor and the first portion and the second portion of the patterned p-type organic polymer semiconductor form heterojunctions therebetween respectively, wherein the first portion of the patterned p-type organic polymer semiconductor is used as an emitter, and the second portion of the patterned p-type organic polymer semiconductor is used as a collector.
摘要翻译：晶体管结构包括形成在作为基底的衬底上的图案化的N型透明氧化物半导体和形成在图案化的N型透明氧化物半导体上的图案化的p型有机聚合物半导体，其包括第一部分和第二部分，图案化的N型透明氧化物半导体，并且图案化的p型有机聚合物半导体的第一部分和第二部分分别在其间形成异质结，其中图案化的p型有机聚合物半导体的第一部分用作发射极，图案化p型有机聚合物半导体的第二部分用作集电体。

2. 发明授权

US08395095B2 Electrothermal transfer device and electrothermal transfer method 有权
标题翻译：电热转移装置和电热转移方法
公开(公告)号：US08395095B2
公开(公告)日：2013-03-12
申请号：US13090773
申请日：2011-04-20
申请人： Chia-Chun Yeh , Yao-Chou Tsai , Henry Wang , Sung-Hui Huang
发明人： Chia-Chun Yeh , Yao-Chou Tsai , Henry Wang , Sung-Hui Huang
IPC分类号： H05B3/02 , H05B1/00
CPC分类号： B41J2/0057 , B41M5/38221
摘要： An electrothermal transfer device includes a substrate, a plurality of electrothermal components and a heating circuit. The electrothermal components are disposed on a surface of the substrate and arranged in a pattern. The heating circuit is electrically connected to the electrothermal components. In an electrothermal transfer method, at first, a transfer substrate is disposed on a workpiece substrate. Then, the electrothermal transfer device is disposed on the transfer substrate so that the electrothermal components contact with the transfer substrate. Thereafter, the heating circuit is used to heat the electrothermal transfer components so that the transfer substrate is heated to be transferred to the workpiece substrate. The electrothermal transfer device and the electrothermal transfer method can reduce cost.
摘要翻译：电热转印装置包括基板，多个电热部件和加热电路。电热部件设置在基板的表面上并且以图案布置。加热电路电连接到电热部件。在电热转印方法中，首先将转印基板设置在工件基板上。然后，将电热转印装置设置在转印基板上，使得电热部件与转印基板接触。此后，加热电路用于加热电热转印组分，使得转印衬底被加热以转移到工件衬底。电热转移装置和电热转移方法可以降低成本。

3. 发明申请

US20120168428A1 ELECTROTHERMAL TRANSFER DEVICE AND ELECTROTHERMAL TRANSFER METHOD 有权
标题翻译：电热转印装置和电热转印方法
公开(公告)号：US20120168428A1
公开(公告)日：2012-07-05
申请号：US13090773
申请日：2011-04-20
申请人： Chia-Chun Yeh , Yao-Chou Tsai , Henry Wang , Sung-Hui Huang
发明人： Chia-Chun Yeh , Yao-Chou Tsai , Henry Wang , Sung-Hui Huang
IPC分类号： H05B3/02
CPC分类号： B41J2/0057 , B41M5/38221
摘要： An electrothermal transfer device includes a substrate, a plurality of electrothermal components and a heating circuit. The electrothermal components are disposed on a surface of the substrate and arranged in a pattern. The heating circuit is electrically connected to the electrothermal components. In an electrothermal transfer method, at first, a transfer substrate is disposed on a workpiece substrate. Then, the electrothermal transfer device is disposed on the transfer substrate so that the electrothermal components contact with the transfer substrate. Thereafter, the heating circuit is used to heat the electrothermal transfer components so that the transfer substrate is heated to be transferred to the workpiece substrate. The electrothermal transfer device and the electrothermal transfer method can reduce cost.
摘要翻译：电热转印装置包括基板，多个电热部件和加热电路。电热部件设置在基板的表面上并且以图案布置。加热电路电连接到电热部件。在电热转印方法中，首先将转印基板设置在工件基板上。然后，将电热转印装置设置在转印基板上，使得电热部件与转印基板接触。此后，加热电路用于加热电热转印组分，使得转印衬底被加热以转移到工件衬底。电热转移装置和电热转移方法可以降低成本。

4. 发明申请

US20120250135A1 Color Display and Method for Manufacturing Color Display 有权
标题翻译：彩色显示器和制造彩色显示器的方法
公开(公告)号：US20120250135A1
公开(公告)日：2012-10-04
申请号：US13335400
申请日：2011-12-22
申请人： Chia-Chun Yeh , Yao-Chou Tsai , Henry Wang , Ted-Hong Shinn
发明人： Chia-Chun Yeh , Yao-Chou Tsai , Henry Wang , Ted-Hong Shinn
IPC分类号： G02F1/153 , H01J9/26
CPC分类号： G02B5/201 , G02F1/133516 , G02F1/157
摘要： A method for manufacturing a color display provides a bottom substrate, injects a liquid display media onto the bottom substrate, and disposes a sealing substrate on the liquid display media, such that the liquid display media is contained between the sealing substrate and the bottom substrate. The method also aligns an image device corresponding to the bottom substrate and transfers a color coating onto the sealing substrate by a laser device through a laser thermal transfer process to form a color filter layer on the sealing substrate.
摘要翻译：制造彩色显示器的方法提供底部基板，将液体显示介质注入到底部基板上，并将密封基板设置在液体显示介质上，使得液体显示介质容纳在密封基板和底部基板之间。该方法还对准与底部基板对应的图像装置，并通过激光热转印工艺通过激光装置将彩色涂层转移到密封基板上，以在密封基板上形成滤色器层。

5. 发明授权

US08724208B2 Color display and method for manufacturing color display 有权
标题翻译：彩色显示器和制造彩色显示的方法
公开(公告)号：US08724208B2
公开(公告)日：2014-05-13
申请号：US13335400
申请日：2011-12-22
申请人： Chia-Chun Yeh , Yao-Chou Tsai , Henry Wang , Ted-Hong Shinn
发明人： Chia-Chun Yeh , Yao-Chou Tsai , Henry Wang , Ted-Hong Shinn
IPC分类号： G02F1/15
CPC分类号： G02B5/201 , G02F1/133516 , G02F1/157
摘要： A method for manufacturing a color display provides a bottom substrate, injects a liquid display media onto the bottom substrate, and disposes a sealing substrate on the liquid display media, such that the liquid display media is contained between the sealing substrate and the bottom substrate. The method also aligns an image device corresponding to the bottom substrate and transfers a color coating onto the sealing substrate by a laser device through a laser thermal transfer process to form a color filter layer on the sealing substrate.
摘要翻译：制造彩色显示器的方法提供底部基板，将液体显示介质注入到底部基板上，并将密封基板设置在液体显示介质上，使得液体显示介质容纳在密封基板和底部基板之间。该方法还对准与底部基板对应的图像装置，并通过激光热转印工艺通过激光装置将彩色涂层转移到密封基板上，以在密封基板上形成滤色器层。

6. 发明授权

US08748222B2 Method for forming oxide thin film transistor 有权
标题翻译：氧化物薄膜晶体管的形成方法
公开(公告)号：US08748222B2
公开(公告)日：2014-06-10
申请号：US12774562
申请日：2010-05-05
申请人： Ted-Hong Shinn , Henry Wang , Fang-An Shu , Yao-Chou Tsai
发明人： Ted-Hong Shinn , Henry Wang , Fang-An Shu , Yao-Chou Tsai
IPC分类号： H01L21/00 , H01L29/786 , H01L29/10 , H01L21/34
CPC分类号： H01L29/78693 , H01L21/34 , H01L29/1083 , H01L29/78609
摘要： A method for manufacturing oxide thin film transistors includes steps of: forming a gate, a drain electrode, a source electrode, and an oxide semiconductor layer respectively. The oxide semiconductor layer is formed on the gate electrode; the drain electrode and the source electrode are formed at two opposite sides of the oxide semiconductor layer. The method further includes a step of depositing a dielectric layer of silicon oxide, and a reacting gas for depositing the silicon oxide includes silane and nitrous oxide. A flow rate of nitrous oxide is in a range from 10 to 200 standard cubic centimeters per minute (SCCM). Oxide thin film transistors manufactured by above method has advantages of low leakage, high mobility, and other integrated circuit member can be directly formed on the thin film transistor array substrate of a display device.
摘要翻译：制造氧化物薄膜晶体管的方法包括以下步骤：分别形成栅极，漏极，源电极和氧化物半导体层。氧化物半导体层形成在栅电极上; 漏电极和源电极形成在氧化物半导体层的两个相对侧。该方法还包括沉积氧化硅的介电层的步骤，并且用于沉积氧化硅的反应气体包括硅烷和一氧化二氮。一氧化二氮的流量在10至200标准立方厘米每分钟（SCCM）的范围内。通过上述方法制造的氧化物薄膜晶体管具有漏电流低，迁移率高的优点，其他集成电路元件可以直接形成在显示器件的薄膜晶体管阵列基板上。

7. 发明授权

US08389310B2 Method for manufacturing oxide thin film transistor and method for manufacturing display device 有权
标题翻译：制造氧化物薄膜晶体管的方法及显示装置的制造方法
公开(公告)号：US08389310B2
公开(公告)日：2013-03-05
申请号：US12699063
申请日：2010-02-03
申请人： Ted-Hong Shinn , Henry Wang , Fang-An Shu , Yao-Chou Tsai
发明人： Ted-Hong Shinn , Henry Wang , Fang-An Shu , Yao-Chou Tsai
IPC分类号： H01L21/00 , H01L51/40
CPC分类号： H01L21/02631 , H01L21/02554 , H01L21/02565 , H01L21/02617 , H01L29/66969 , H01L29/7869
摘要： A method for manufacturing an oxide thin film transistor includes the steps of forming an oxide semiconductor active layer by a deposition process. In the deposition process, a total flow rate of a gas is more than 100 standard cubic centimeters per minute and an electric power is in a range from 1.5 kilowatts to 10 kilowatts. The oxide thin film transistor manufactured by the above methods has advantages of low leakage currents, high electron mobility, and excellent temperature stability. The present invention also provides a method for manufacturing a display device. The display quality of the display device can be improved.
摘要翻译：制造氧化物薄膜晶体管的方法包括通过沉积工艺形成氧化物半导体活性层的步骤。在沉积过程中，气体的总流量大于100标准立方厘米每分钟，电功率在1.5千瓦至10千瓦的范围内。通过上述方法制造的氧化物薄膜晶体管具有低漏电流，高电子迁移率和优异的温度稳定性的优点。本发明还提供一种显示装置的制造方法。可以提高显示装置的显示质量。

8. 发明授权

US09165955B2 Array substrate and method for manufacturing the same 有权
标题翻译：阵列基板及其制造方法
公开(公告)号：US09165955B2
公开(公告)日：2015-10-20
申请号：US13530098
申请日：2012-06-21
申请人： Wei-Chou Lan , Ted-Hong Shinn , Henry Wang , Chia-Chun Yeh
发明人： Wei-Chou Lan , Ted-Hong Shinn , Henry Wang , Chia-Chun Yeh
IPC分类号： H01L33/08 , H01L27/12
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/47635 , H01L27/1218 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/24 , H01L29/4908 , H01L29/51 , H01L29/66969 , H01L29/78603 , H01L29/78606
摘要： Disclosed herein is a method for manufacturing an array substrate. The method includes forming a source electrode and a drain electrode on a substrate. A semiconductor layer, an organic insulating layer, and a gate electrode layer are sequentially formed to cover the substrate, the source electrode, and the drain electrode. A patterned photoresist layer is formed on the gate electrode layer. The exposed portion of the gate electrode layer, and a portion of the organic insulative layer and a portion of the semiconductor layer thereunder are removed to form a gate electrode. An organic passivation layer is formed on the gate electrode, the source electrode, and the drain electrode. The organic passivation layer has a contact window to expose a portion of the drain electrode. A pixel electrode is formed on the organic passivation layer and the exposed portion of the drain electrode.
摘要翻译：这里公开了一种阵列基板的制造方法。该方法包括在基板上形成源电极和漏电极。依次形成半导体层，有机绝缘层和栅电极层，以覆盖基板，源电极和漏电极。在栅电极层上形成图案化的光致抗蚀剂层。除去栅电极层的露出部分，有机绝缘层的一部分及其下面的半导体层的一部分，形成栅电极。在栅电极，源电极和漏电极上形成有机钝化层。有机钝化层具有暴露漏电极的一部分的接触窗口。在有机钝化层和漏电极的露出部分上形成像素电极。

9. 发明授权

US08797635B2 Color electrophoretic display 有权
标题翻译：彩色电泳显示
公开(公告)号：US08797635B2
公开(公告)日：2014-08-05
申请号：US13414694
申请日：2012-03-07
申请人： Chia-Chun Yeh , Chi-Sheng Jiang , Henry Wang , Ted-Hong Shinn
发明人： Chia-Chun Yeh , Chi-Sheng Jiang , Henry Wang , Ted-Hong Shinn
IPC分类号： G02B26/00
CPC分类号： G02F1/167 , G02F2001/1676 , G02F2201/50
摘要： A color electrophoretic display includes a substrate, a segment electrode circuit layer, a transparent electrode layer, an electrophoretic display medium layer, and a colored polymer film. The segment electrode circuit layer is disposed on the substrate and is configured to display a letter and/or a pattern. The transparent electrode layer is disposed opposing the segment electrode circuit layer, and the electrophoretic display medium layer is disposed between the segment electrode circuit layer and the transparent electrode layer. The electrophoretic display medium layer is controlled by an electric field that is produced and varied by the segment electrode circuit layer and the transparent electrode layer to change brightness. The color polymer film is disposed on the transparent electrode layer to produce color. The colored polymer film includes a polymer layer and pigment particles distributed in the polymer layer.
摘要翻译：彩色电泳显示器包括基板，段电极电路层，透明电极层，电泳显示介质层和着色聚合物膜。分段电极电路层设置在基板上并且被配置为显示字母和/或图案。透明电极层与分段电极电路层相对配置，电泳显示介质层配置在分段电极电路层和透明电极层之间。电泳显示介质层由通过分段电极电路层和透明电极层产生和变化的电场来控制，以改变亮度。彩色聚合物膜设置在透明电极层上以产生颜色。着色聚合物膜包括聚合物层和分布在聚合物层中的颜料颗粒。

10. 发明授权

US09123691B2 Thin-film transistor and method for manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US09123691B2
公开(公告)日：2015-09-01
申请号：US13615640
申请日：2012-09-14
申请人： Henry Wang , Chia-Chun Yeh , Xue-Hung Tsai , Chih-Hsuan Wang , Ted-Hong Shinn
发明人： Henry Wang , Chia-Chun Yeh , Xue-Hung Tsai , Chih-Hsuan Wang , Ted-Hong Shinn
IPC分类号： H01L29/417 , H01L29/10 , H01L29/786
CPC分类号： H01L29/41733 , H01L29/1037 , H01L29/7869
摘要： Disclosed herein is a thin film transistor. The thin film transistor is characterized in having a source interconnect layer and a drain interconnect layer. The source electrode and the drain electrode are respectively disposed above and in contact with the source interconnect layer and the drain interconnect layer. The semiconductor layer is in contact with both the source interconnect layer and the drain interconnect layer, but is not in contact with the source electrode and the drain electrode.
摘要翻译：这里公开了一种薄膜晶体管。薄膜晶体管的特征在于具有源极互连层和漏极互连层。源电极和漏极分别设置在源极互连层和漏极互连层的上方并与之接触。半导体层与源极互连层和漏极互连层两者接触，但不与源极和漏极接触。

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