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1. 发明授权

US08932936B2 Method of forming a FinFET device 有权
标题翻译：形成FinFET器件的方法
公开(公告)号：US08932936B2
公开(公告)日：2015-01-13
申请号：US13449118
申请日：2012-04-17
申请人： Chia-Chu Liu , Kuei-Shun Chen , Chih-Hsiung Peng , Chi-Kang Chang , Chiang Mu-Chi , Sheng-Yu Chang , Hua Feng Chen , Chao-Cheng Chen , Ryan Chia-Jen Chen
发明人： Chia-Chu Liu , Kuei-Shun Chen , Chih-Hsiung Peng , Chi-Kang Chang , Chiang Mu-Chi , Sheng-Yu Chang , Hua Feng Chen , Chao-Cheng Chen , Ryan Chia-Jen Chen
IPC分类号： H01L21/00
CPC分类号： H01L21/3086 , H01L21/76224
摘要： A method for fabricating a device is disclosed. An exemplary method includes providing a substrate and forming a plurality of fins over the substrate. The method further includes forming a first opening in the substrate in a first longitudinal direction. The method further includes forming a second opening in the substrate in a second longitudinal direction. The first and second longitudinal directions are different. The method further includes depositing a filling material in the first and second openings.
摘要翻译：公开了一种制造装置的方法。一种示例性的方法包括提供衬底并在衬底上形成多个鳍。该方法还包括在第一纵向方向上在基板中形成第一开口。该方法还包括在第二纵向方向上在基板中形成第二开口。第一和第二纵向是不同的。该方法还包括在第一和第二开口中沉积填充材料。

2. 发明申请

US20130273711A1 METHOD OF FORMING A FINFET DEVICE 有权
标题翻译：形成FINFET器件的方法
公开(公告)号：US20130273711A1
公开(公告)日：2013-10-17
申请号：US13449118
申请日：2012-04-17
申请人： Chia-Chu Liu , Kuei-Shun Chen , Chih-Hsiung Peng , Chi-Kang Chang , Chiang Mu-Chi , Sheng-Yu Chang , Hua Feng Chen , Chao-Cheng Chen , Ryan Chia-Jen Chen
发明人： Chia-Chu Liu , Kuei-Shun Chen , Chih-Hsiung Peng , Chi-Kang Chang , Chiang Mu-Chi , Sheng-Yu Chang , Hua Feng Chen , Chao-Cheng Chen , Ryan Chia-Jen Chen
IPC分类号： H01L21/762
CPC分类号： H01L21/3086 , H01L21/76224
摘要： A method for fabricating a device is disclosed. An exemplary method includes providing a substrate and forming a plurality of fins over the substrate. The method further includes forming a first opening in the substrate in a first longitudinal direction. The method further includes forming a second opening in the substrate in a second longitudinal direction. The first and second longitudinal directions are different. The method further includes depositing a filling material in the first and second openings.
摘要翻译：公开了一种制造装置的方法。一种示例性的方法包括提供衬底并在衬底上形成多个鳍。该方法还包括在第一纵向方向上在基板中形成第一开口。该方法还包括在第二纵向方向上在基板中形成第二开口。第一和第二纵向是不同的。该方法还包括在第一和第二开口中沉积填充材料。

3. 发明授权

US08735994B2 Electrical-free dummy gate 有权
标题翻译：无电气虚拟门
公开(公告)号：US08735994B2
公开(公告)日：2014-05-27
申请号：US13431072
申请日：2012-03-27
申请人： Chia-Chu Liu , Kuei Shun Chen , Chiang Mu-Chi
发明人： Chia-Chu Liu , Kuei Shun Chen , Chiang Mu-Chi
IPC分类号： H01L27/088
CPC分类号： H01L21/28123 , H01L29/42372 , H01L29/78
摘要： The present disclosure provides a semiconductor device. The semiconductor device includes an electrical-free dummy gate formed over a substrate. The dummy gate has an elongate shape and is oriented along a first direction. The semiconductor device includes a first functional gate formed over the substrate. The first functional gate has an elongate shape and is oriented along the first direction. The first functional gate is separated from the dummy gate in a second direction perpendicular to the first direction. A first conductive contact is formed on the first functional gate. The semiconductor device includes a second functional gate formed over the substrate. The second functional gate has an elongate shape and is oriented along the first direction. The second functional gate is aligned with and physically separated from the dummy gate in the first direction. A second conductive contact is formed on the second functional gate.
摘要翻译：本发明提供一种半导体器件。半导体器件包括形成在衬底上的无电虚拟栅极。虚拟门具有细长形状并且沿着第一方向定向。半导体器件包括形成在衬底上的第一功能栅极。第一功能门具有细长形状并且沿着第一方向定向。第一功能门在垂直于第一方向的第二方向上与虚拟栅极分离。在第一功能栅极上形成第一导电接触。半导体器件包括形成在衬底上的第二功能栅极。第二功能门具有细长形状并且沿着第一方向定向。第二功能门与第一方向上的虚拟栅极对准并在物理上分离。在第二功能栅极上形成第二导电接触。

4. 发明申请

US20130256809A1 ELECTRICAL-FREE DUMMY GATE 有权
标题翻译：电动门
公开(公告)号：US20130256809A1
公开(公告)日：2013-10-03
申请号：US13431072
申请日：2012-03-27
申请人： Chia-Chu Liu , Kuei Shun Chen , Chiang Mu-Chi
发明人： Chia-Chu Liu , Kuei Shun Chen , Chiang Mu-Chi
IPC分类号： H01L29/423 , H01L27/088 , H01L21/283
CPC分类号： H01L21/28123 , H01L29/42372 , H01L29/78
摘要： The present disclosure provides a semiconductor device. The semiconductor device includes an electrical-free dummy gate formed over a substrate. The dummy gate has an elongate shape and is oriented along a first direction. The semiconductor device includes a first functional gate formed over the substrate. The first functional gate has an elongate shape and is oriented along the first direction. The first functional gate is separated from the dummy gate in a second direction perpendicular to the first direction. A first conductive contact is formed on the first functional gate. The semiconductor device includes a second functional gate formed over the substrate. The second functional gate has an elongate shape and is oriented along the first direction. The second functional gate is aligned with and physically separated from the dummy gate in the first direction. A second conductive contact is formed on the second functional gate.
摘要翻译：本发明提供一种半导体器件。半导体器件包括形成在衬底上的无电虚拟栅极。虚拟门具有细长形状并且沿着第一方向定向。半导体器件包括形成在衬底上的第一功能栅极。第一功能门具有细长形状并且沿着第一方向定向。第一功能门在垂直于第一方向的第二方向上与虚拟栅极分离。在第一功能栅极上形成第一导电接触。半导体器件包括形成在衬底上的第二功能栅极。第二功能门具有细长形状并且沿着第一方向定向。第二功能门与第一方向上的虚拟栅极对准并在物理上分离。在第二功能栅极上形成第二导电接触。

5. 发明申请

US20140065832A1 ENHANCED FINFET PROCESS OVERLAY MARK 有权
标题翻译：加强FINFET工艺标准
公开(公告)号：US20140065832A1
公开(公告)日：2014-03-06
申请号：US13602697
申请日：2012-09-04
申请人： Chi-Wen Hsieh , Chi-Kang Chang , Chia-Chu Liu , Meng-Wei Chen , Kuei-Shun Chen
发明人： Chi-Wen Hsieh , Chi-Kang Chang , Chia-Chu Liu , Meng-Wei Chen , Kuei-Shun Chen
IPC分类号： H01L21/308 , H01L23/544
CPC分类号： H01L23/544 , G03F7/70633 , G03F7/70683 , H01L27/0883 , H01L27/0886 , H01L2223/54426 , H01L2924/0002 , H01L2924/00
摘要： An overlay mark suitable for use in manufacturing nonplanar circuit devices and a method for forming the overlay mark are disclosed. An exemplary embodiment includes receiving a substrate having an active device region and an overlay region. One or more dielectric layers and a hard mask are formed on the substrate. The hard mask is patterned to form a hard mask layer feature configured to define an overlay mark fin. Spacers are formed on the patterned hard mask layer. The spacers further define the overlay mark fin and an active device fin. The overlay mark fin is cut to form a fin line-end used to define a reference location for overlay metrology. The dielectric layers and the substrate are etched to further define the overlay mark fin.
摘要翻译：公开了适用于制造非平面电路器件的重叠标记和形成覆盖标记的方法。示例性实施例包括接收具有有源器件区域和覆盖区域的衬底。在基板上形成一个或多个电介质层和硬掩模。图案化硬掩模以形成被配置为限定覆盖标记鳍的硬掩模层特征。间隔物形成在图案化的硬掩模层上。垫片进一步限定重叠标记鳍片和有源器件鳍片。覆盖标记鳍被切割以形成用于定义覆盖度量的参考位置的鳍线端。蚀刻电介质层和衬底以进一步限定覆盖标记鳍。

6. 发明授权

US08822343B2 Enhanced FinFET process overlay mark 有权
标题翻译：增强型FinFET工艺叠加标记
公开(公告)号：US08822343B2
公开(公告)日：2014-09-02
申请号：US13602697
申请日：2012-09-04
申请人： Chi-Wen Hsieh , Chi-Kang Chang , Chia-Chu Liu , Meng-Wei Chen , Kuei-Shun Chen
发明人： Chi-Wen Hsieh , Chi-Kang Chang , Chia-Chu Liu , Meng-Wei Chen , Kuei-Shun Chen
IPC分类号： H01L21/308
CPC分类号： H01L23/544 , G03F7/70633 , G03F7/70683 , H01L27/0883 , H01L27/0886 , H01L2223/54426 , H01L2924/0002 , H01L2924/00
摘要： An overlay mark suitable for use in manufacturing nonplanar circuit devices and a method for forming the overlay mark are disclosed. An exemplary embodiment includes receiving a substrate having an active device region and an overlay region. One or more dielectric layers and a hard mask are formed on the substrate. The hard mask is patterned to form a hard mask layer feature configured to define an overlay mark fin. Spacers are formed on the patterned hard mask layer. The spacers further define the overlay mark fin and an active device fin. The overlay mark fin is cut to form a fin line-end used to define a reference location for overlay metrology. The dielectric layers and the substrate are etched to further define the overlay mark fin.
摘要翻译：公开了适用于制造非平面电路器件的重叠标记和形成覆盖标记的方法。示例性实施例包括接收具有有源器件区域和覆盖区域的衬底。在基板上形成一个或多个电介质层和硬掩模。图案化硬掩模以形成被配置为限定覆盖标记鳍的硬掩模层特征。间隔物形成在图案化的硬掩模层上。垫片进一步限定重叠标记鳍片和有源器件鳍片。覆盖标记鳍被切割以形成用于定义覆盖度量的参考位置的鳍线端。蚀刻电介质层和衬底以进一步限定覆盖标记鳍。

7. 发明授权

US08877598B2 Method of lithography process with an under isolation material layer 有权
标题翻译：具有隔离材料层的光刻工艺方法
公开(公告)号：US08877598B2
公开(公告)日：2014-11-04
申请号：US13486050
申请日：2012-06-01
申请人： Chung-Ming Wang , Yu Lun Liu , Chia-Chu Liu , Ya Hui Chang , Kuei-Shun Chen
发明人： Chung-Ming Wang , Yu Lun Liu , Chia-Chu Liu , Ya Hui Chang , Kuei-Shun Chen
IPC分类号： H01L21/336 , H01L21/4763 , H01L29/786 , H01L27/12
CPC分类号： H01L29/78606 , H01L21/02118 , H01L21/02282 , H01L21/0271 , H01L21/2652 , H01L21/31144 , H01L27/1292 , H01L29/6659
摘要： A method of forming a integrated circuit pattern. The method includes forming gate stacks on a substrate, two adjacent gate stacks of the gate stacks being spaced away by a dimension G; forming a nitrogen-containing layer on the gate stacks and the substrate; forming a dielectric material layer on the nitrogen-containing layer, the dielectric material layer having a thickness T substantially less than G/2; coating a photoresist layer on the dielectric material layer; and patterning the photoresist layer by a lithography process.
摘要翻译：一种形成集成电路图案的方法。该方法包括在衬底上形成栅极堆叠，门堆叠的两个相邻栅堆叠被尺寸G间隔开; 在栅叠层和衬底上形成含氮层; 在所述含氮层上形成介电材料层，所述电介质材料层的厚度T大致小于G / 2; 在介电材料层上涂覆光致抗蚀剂层; 并通过光刻工艺图案化光致抗蚀剂层。

8. 发明授权

US08732626B2 System and method of circuit layout for multiple cells 有权
标题翻译：多个单元电路布局的系统和方法
公开(公告)号：US08732626B2
公开(公告)日：2014-05-20
申请号：US13343980
申请日：2012-01-05
申请人： Chia-Chu Liu , Kuei Shun Chen
发明人： Chia-Chu Liu , Kuei Shun Chen
IPC分类号： G06F17/50
CPC分类号： G06F17/5072 , G06F17/5068
摘要： A method and system check a double patterning layout in abutting cells and switch the pattern in one of the cells if the edge patterns in each cell are in the same mask. The method includes receiving layout data having patterns in abutting cells, changing a designated mask in one cell if the edge patterns are in the same mask, adjusting cell edge spacings at a shared edge according to a minimum spacing rule and a G1-rule, and outputting a presentation of the layout data.
摘要翻译：一种方法和系统检查邻接单元格中的双重图案化布局，并且如果每个单元格中的边缘图案处于相同的掩码中，则在其中一个单元格中切换图案。该方法包括接收具有邻接单元格的布局数据，如果边缘图案在相同的掩码中，则改变一个单元中的指定掩码，根据最小间距规则和G1规则调整共享边缘处的单元边缘间距，以及输出布局数据的呈现。

9. 发明申请

US20140065554A1 Method and Apparatus for Developing Process 有权
标题翻译：开发过程的方法和装置
公开(公告)号：US20140065554A1
公开(公告)日：2014-03-06
申请号：US13602445
申请日：2012-09-04
申请人： Yu-Lun Liu , Chia-Chu Liu , Kuei-Shun Chen , Chung-Ming Wang , Ying-Hao Su
发明人： Yu-Lun Liu , Chia-Chu Liu , Kuei-Shun Chen , Chung-Ming Wang , Ying-Hao Su
IPC分类号： G03F7/20 , G03B27/32
CPC分类号： G03F7/322
摘要： The present disclosure involves a method of fabricating a semiconductor device. The method includes providing a substrate having a material layer formed thereon; depositing a photoresist layer on the material layer, the photoresist layer having a vertical dimension; exposing a region of the photoresist layer to radiation, the exposed region having a horizontal dimension, wherein a first ratio of the vertical dimension to the horizontal dimension exceeds a predetermined ratio; and developing the photoresist layer to remove the exposed region at least in part through applying a developer solution containing a first chemical and a second chemical, wherein: the first chemical is configured to dissolve the exposed region of the photoresist layer through a chemical reaction; the second chemical is configured to enhance flow of the first chemical that comes into contact with the photoresist layer; and an optimized second ratio exists between the first chemical and the second chemical.
摘要翻译：本公开涉及制造半导体器件的方法。该方法包括提供其上形成有材料层的基板; 在所述材料层上沉积光致抗蚀剂层，所述光致抗蚀剂层具有垂直尺寸; 将所述光致抗蚀剂层的区域暴露于辐射，所述暴露区域具有水平尺寸，其中所述垂直尺寸与所述水平尺寸的第一比例超过预定比率; 并且通过施加包含第一化学品和第二化学品的显影剂溶液，至少部分地显影所述光致抗蚀剂层以去除所述暴露区域，其中：所述第一化学品被配置为通过化学反应溶解所述光致抗蚀剂层的暴露区域; 第二化学品被配置为增强与光致抗蚀剂层接触的第一化学品的流动; 并且在第一化学品和第二化学品之间存在优化的第二比例。

10. 发明申请

US20130323898A1 METHOD OF LITHOGRAPHY PROCESS WITH AN UNDER ISOLATION MATERIAL LAYER 有权
标题翻译：具有隔离材料层的沉积工艺的方法
公开(公告)号：US20130323898A1
公开(公告)日：2013-12-05
申请号：US13486050
申请日：2012-06-01
申请人： Chung-Ming Wang , Yu Lun Liu , Chia-Chu Liu , Ya Hui Chang , Kuei-Shun Chen
发明人： Chung-Ming Wang , Yu Lun Liu , Chia-Chu Liu , Ya Hui Chang , Kuei-Shun Chen
IPC分类号： H01L21/28 , H01L21/336
CPC分类号： H01L29/78606 , H01L21/02118 , H01L21/02282 , H01L21/0271 , H01L21/2652 , H01L21/31144 , H01L27/1292 , H01L29/6659
摘要： A method of forming a integrated circuit pattern. The method includes forming gate stacks on a substrate, two adjacent gate stacks of the gate stacks being spaced away by a dimension G; forming a nitrogen-containing layer on the gate stacks and the substrate; forming a dielectric material layer on the nitrogen-containing layer, the dielectric material layer having a thickness T substantially less than G/2; coating a photoresist layer on the dielectric material layer; and patterning the photoresist layer by a lithography process.
摘要翻译：一种形成集成电路图案的方法。该方法包括在衬底上形成栅极堆叠，门堆叠的两个相邻栅堆叠被尺寸G间隔开; 在栅叠层和衬底上形成含氮层; 在所述含氮层上形成介电材料层，所述电介质材料层的厚度T大致小于G / 2; 在介电材料层上涂覆光致抗蚀剂层; 并通过光刻工艺图案化光致抗蚀剂层。

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