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1. 发明申请

US20070042536A1 Thin film transistor and method for manufacturing the same 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20070042536A1
公开(公告)日：2007-02-22
申请号：US11372123
申请日：2006-03-10
申请人： Chi-Wen Chen , Jen-Chien Peng , Yun-Sheng Chen
发明人： Chi-Wen Chen , Jen-Chien Peng , Yun-Sheng Chen
IPC分类号： H01L21/84
CPC分类号： H01L29/78621 , H01L29/66765 , H01L29/78624
摘要： A method for manufacturing a thin film transistor of the invention comprises steps of: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming a polysilicon layer on the gate insulating layer; forming an etching-stop layer on the polysilicon layer and corresponding to the gate electrode; forming a heavily doped polysilicon layer on the etching-stop layer and the polysilicon layer, the heavily doped polysilicon layer exposing a part of the etching-stop layer; and forming a source electrode and a drain electrode on the heavily doped polysilicon layer, and the source and drain electrode relatively positioned above the two sides of the gate electrode.
摘要翻译：本发明的薄膜晶体管的制造方法包括以下步骤：在基板上形成栅电极; 在栅电极上形成栅极绝缘层; 在所述栅极绝缘层上形成多晶硅层; 在所述多晶硅层上形成对应于所述栅电极的蚀刻停止层; 在所述蚀刻停止层和所述多晶硅层上形成重掺杂多晶硅层，所述重掺杂多晶硅层暴露所述蚀刻停止层的一部分; 并且在重掺杂多晶硅层上形成源电极和漏电极，并且源电极和漏电极相对位于栅极两侧的上方。

2. 发明授权

US07701007B2 Thin film transistor with source and drain separately formed from amorphus silicon region 有权
标题翻译：源极和漏极的薄膜晶体管分别由非晶硅区域形成
公开(公告)号：US07701007B2
公开(公告)日：2010-04-20
申请号：US11393742
申请日：2006-03-31
申请人： Chi-Wen Chen , Ting-Chang Chang , Po-Tsun Liu , Kuo-Yu Huang , Jen-Chien Peng
发明人： Chi-Wen Chen , Ting-Chang Chang , Po-Tsun Liu , Kuo-Yu Huang , Jen-Chien Peng
IPC分类号： H01L27/12
CPC分类号： H01L29/66765 , H01L27/124 , H01L27/1248
摘要： A Thin Film Transistor comprises a gate electrode formed on a substrate; a gate insulation layer covering the gate electrode; an amorphous silicon (a-Si) region disposed on the gate insulation layer and above the gate electrode; a doped a-Si region formed on the a-Si region; the source and drain metal regions separately formed on the doped a-Si region and above the gate electrode, and isolated from the a-Si region; a passivation layer formed on the gate insulation layer and covering the source, drain and data-line (DL) metal regions; and a conductive layer formed on the passivation layer. The passivation layer has a first, second and third vias for respectively exposing the partial surfaces of the source, drain and DL metal regions. The first, second and third vias are filled with the conductive layer, so that the DL and source metal regions are connected via the conductive layer.
摘要翻译：薄膜晶体管包括形成在基板上的栅电极; 覆盖栅电极的栅极绝缘层; 设置在栅极绝缘层上和栅电极上方的非晶硅（a-Si）区; 形成在a-Si区上的掺杂a-Si区; 源极和漏极金属区域分别形成在掺杂的a-Si区域和栅电极上方，并与a-Si区域隔离; 形成在所述栅极绝缘层上并覆盖所述源极，漏极和数据线（DL）金属区域的钝化层; 以及形成在钝化层上的导电层。钝化层具有用于分别暴露源极，漏极和DL金属区域的部分表面的第一，第二和第三通孔。第一，第二和第三通孔填充有导电层，使得DL和源极金属区域经由导电层连接。

3. 发明申请

US20070052020A1 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20070052020A1
公开(公告)日：2007-03-08
申请号：US11393742
申请日：2006-03-31
申请人： Chi-Wen Chen , Ting-Chang Chang , Po-Tsun Liu , Kuo-Yu Huang , Jen-Chien Peng
发明人： Chi-Wen Chen , Ting-Chang Chang , Po-Tsun Liu , Kuo-Yu Huang , Jen-Chien Peng
IPC分类号： H01L27/12
CPC分类号： H01L29/66765 , H01L27/124 , H01L27/1248
摘要： A Thin Film Transistor comprises a gate electrode formed on a substrate; a gate insulation layer covering the gate electrode; an amorphous silicon (a-Si) region disposed on the gate insulation layer and above the gate electrode; a doped a-Si region formed on the a-Si region; the source and drain metal regions separately formed on the doped a-Si region and above the gate electrode, and isolated from the a-Si region; a passivation layer formed on the gate insulation layer and covering the source, drain and data-line (DL) metal regions; and a conductive layer formed on the passivation layer. The passivation layer has a first, second and third vias for respectively exposing the partial surfaces of the source, drain and DL metal regions. The first, second and third vias are filled with the conductive layer, so that the DL and source metal regions are connected via the conductive layer.
摘要翻译：薄膜晶体管包括形成在基板上的栅电极; 覆盖栅电极的栅极绝缘层; 设置在栅极绝缘层上和栅电极上方的非晶硅（a-Si）区; 形成在a-Si区上的掺杂a-Si区; 源极和漏极金属区域分别形成在掺杂的a-Si区域和栅电极上方，并与a-Si区域隔离; 形成在所述栅极绝缘层上并覆盖所述源极，漏极和数据线（DL）金属区域的钝化层; 以及形成在钝化层上的导电层。钝化层具有用于分别暴露源极，漏极和DL金属区域的部分表面的第一，第二和第三通孔。第一，第二和第三通孔填充有导电层，使得DL和源极金属区域经由导电层连接。

4. 发明授权

US07816174B2 Control element of an organic electro-luminescent display and manufacturing process thereof 有权
标题翻译：有机电致发光显示器的控制元件及其制造方法
公开(公告)号：US07816174B2
公开(公告)日：2010-10-19
申请号：US12543059
申请日：2009-08-18
申请人： Jen-Chien Peng , Meng-Hsiang Chang
发明人： Jen-Chien Peng , Meng-Hsiang Chang
IPC分类号： H01L51/40
CPC分类号： H01L27/124 , H01L27/1255 , H01L27/3244
摘要： A control element of an organic electro-luminescent display includes a first transistor, a second transistor and a capacitor. The first gate electrode of the first transistor is electrically connected to a scan line, and the first source/drain electrode of the first transistor is electrically connected to a data line. The second gate electrode of the second transistor is electrically connected to the second source/drain electrode of the first transistor. The third source/drain electrode of the second transistor is electrically connected to a working voltage, and the fourth source/drain electrode of the second transistor is electrically connected to a light emitting diode. One end of the capacitor is electrically connected to the second gate electrode. The material of the dielectric layer of the capacitor is different from the material of the gate dielectric of one of the first transistor and the second transistor.
摘要翻译：有机电致发光显示器的控制元件包括第一晶体管，第二晶体管和电容器。第一晶体管的第一栅极与扫描线电连接，第一晶体管的第一源极/漏极电连接到数据线。第二晶体管的第二栅极电连接到第一晶体管的第二源/漏电极。第二晶体管的第三源极/漏极电连接到工作电压，第二晶体管的第四源极/漏极电连接到发光二极管。电容器的一端电连接到第二栅电极。电容器的电介质层的材料与第一晶体管和第二晶体管之一的栅极电介质的材料不同。

5. 发明申请

US20090305476A1 Control Element of an Organic Electro-Luminescent Display and Manufacturing Process Thereof 有权
标题翻译：有机电致发光显示器及其制造方法的控制元件
公开(公告)号：US20090305476A1
公开(公告)日：2009-12-10
申请号：US12543059
申请日：2009-08-18
申请人： Jen-Chien Peng , Meng-Hsiang Chang
发明人： Jen-Chien Peng , Meng-Hsiang Chang
IPC分类号： H01L21/8234
CPC分类号： H01L27/124 , H01L27/1255 , H01L27/3244
摘要： A control element of an organic electro-luminescent display includes a first transistor, a second transistor and a capacitor. The first gate electrode of the first transistor is electrically connected to a scan line, and the first source/drain electrode of the first transistor is electrically connected to a data line. The second gate electrode of the second transistor is electrically connected to the second source/drain electrode of the first transistor. The third source/drain electrode of the second transistor is electrically connected to a working voltage, and the fourth source/drain electrode of the second transistor is electrically connected to a light emitting diode. One end of the capacitor is electrically connected to the second gate electrode. The material of the dielectric layer of the capacitor is different from the material of the gate dielectric of one of the first transistor and the second transistor.
摘要翻译：有机电致发光显示器的控制元件包括第一晶体管，第二晶体管和电容器。第一晶体管的第一栅电极电连接到扫描线，并且第一晶体管的第一源极/漏极电连接到数据线。第二晶体管的第二栅极电连接到第一晶体管的第二源/漏电极。第二晶体管的第三源极/漏极电连接到工作电压，第二晶体管的第四源极/漏极电连接到发光二极管。电容器的一端电连接到第二栅电极。电容器的电介质层的材料与第一晶体管和第二晶体管之一的栅极电介质的材料不同。

6. 发明授权

US07595503B2 Control element of an organic electro-luminescent display and manufacturing process thereof 有权
标题翻译：有机电致发光显示器的控制元件及其制造方法
公开(公告)号：US07595503B2
公开(公告)日：2009-09-29
申请号：US11406727
申请日：2006-04-19
申请人： Jen-Chien Peng , Meng-Hsiang Chang
发明人： Jen-Chien Peng , Meng-Hsiang Chang
IPC分类号： H01L35/24
CPC分类号： H01L27/124 , H01L27/1255 , H01L27/3244
摘要： A control element of an organic electro-luminescent display includes a first transistor, a second transistor and a capacitor. The first gate electrode of the first transistor is electrically connected to a scan line, and the first source/drain electrode of the first transistor is electrically connected to a data line. The second gate electrode of the second transistor is electrically connected to the second source/drain electrode of the first transistor. The third source/drain electrode of the second transistor is electrically connected to a working voltage, and the fourth source/drain electrode of the second transistor is electrically connected to a light emitting diode. One end of the capacitor is electrically connected to the second gate electrode. The material of the dielectric layer of the capacitor is different from the material of the gate dielectric of one of the first transistor and the second transistor.
摘要翻译：有机电致发光显示器的控制元件包括第一晶体管，第二晶体管和电容器。第一晶体管的第一栅极与扫描线电连接，第一晶体管的第一源极/漏极电连接到数据线。第二晶体管的第二栅极电连接到第一晶体管的第二源/漏电极。第二晶体管的第三源极/漏极电连接到工作电压，第二晶体管的第四源极/漏极电连接到发光二极管。电容器的一端电连接到第二栅电极。电容器的电介质层的材料与第一晶体管和第二晶体管之一的栅极电介质的材料不同。

7. 发明申请

US20070099322A1 Control element of an organic electro-luminescent display and manufacturing process thereof 有权
标题翻译：有机电致发光显示器的控制元件及其制造方法
公开(公告)号：US20070099322A1
公开(公告)日：2007-05-03
申请号：US11406727
申请日：2006-04-19
申请人： Jen-Chien Peng , Meng-Hsiang Chang
发明人： Jen-Chien Peng , Meng-Hsiang Chang
IPC分类号： H01L21/00
CPC分类号： H01L27/124 , H01L27/1255 , H01L27/3244
摘要： A control element of an organic electro-luminescent display includes a first transistor, a second transistor and a capacitor. The first gate electrode of the first transistor is electrically connected to a scan line, and the first source/drain electrode of the first transistor is electrically connected to a data line. The second gate electrode of the second transistor is electrically connected to the second source/drain electrode of the first transistor. The third source/drain electrode of the second transistor is electrically connected to a working voltage, and the fourth source/drain electrode of the second transistor is electrically connected to a light emitting diode. One end of the capacitor is electrically connected to the second gate electrode. The material of the dielectric layer of the capacitor is different from the material of the gate dielectric of one of the first transistor and the second transistor.
摘要翻译：有机电致发光显示器的控制元件包括第一晶体管，第二晶体管和电容器。第一晶体管的第一栅极与扫描线电连接，第一晶体管的第一源极/漏极电连接到数据线。第二晶体管的第二栅极电连接到第一晶体管的第二源/漏电极。第二晶体管的第三源极/漏极电连接到工作电压，第二晶体管的第四源极/漏极电连接到发光二极管。电容器的一端电连接到第二栅电极。电容器的电介质层的材料与第一晶体管和第二晶体管之一的栅极电介质的材料不同。

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