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1. 发明授权

US08305734B2 Insulating encapsulation structure for solid chip electrolytic capacitor 有权
标题翻译：固体电解电容绝缘封装结构
公开(公告)号：US08305734B2
公开(公告)日：2012-11-06
申请号：US12907158
申请日：2010-10-19
申请人： Chi-Hao Chiu , Ming-Tsung Chen , Chiao-Yinms Yang
发明人： Chi-Hao Chiu , Ming-Tsung Chen , Chiao-Yinms Yang
IPC分类号： H01G9/08
CPC分类号： H01G9/15 , H01G9/08
摘要： An insulating encapsulation structure is applied to a chip type solid electrolytic capacitor that includes an aluminum metallic body having an aluminum core layer. An upper oxide film and a lower oxide film respectively having fine holes on their surfaces are respectively formed on the top and the bottom of the aluminum core layer. On side surfaces of the metallic body is a plurality of cut burrs. The upper oxide film and the lower oxide film of the metallic body are respectively separated by a separating layer to form an anode and a cathode. The insulating encapsulation structure includes an insulating cover layer enclosing an outer surface of the metallic body to cover the cut burrs. Thereby, the required chemical conversion process is reduced along with current leakage, the overall manufacturing cost is lowered, and the mechanical strength for the edge of the metallic body is reinforced.
摘要翻译：绝缘封装结构被应用于包括具有铝芯层的铝金属体的芯片型固体电解电容器。在铝芯层的顶部和底部分别形成表面上分别具有细孔的上氧化膜和低氧化膜。金属体的侧面是多个切割毛刺。金属体的上部氧化物膜和下部氧化物膜分别通过分离层分离以形成阳极和阴极。绝缘封装结构包括封闭金属体的外表面以覆盖切割毛刺的绝缘覆盖层。因此，随着电流泄漏，所需的化学转化过程减少，整体制造成本降低，并且增强了金属体边缘的机械强度。

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