专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5943569A Method for making improved capacitors on dynamic random access memory having increased capacitance, longer refresh times, and improved yields 失效
标题翻译：用于在动态随机存取存储器中制造改进的电容器的方法，其具有增加的电容，更长的刷新次数和提高的
公开(公告)号：US5943569A
公开(公告)日：1999-08-24
申请号：US880854
申请日：1997-06-23
申请人： Cheng-Yeh Shih , Yuan-Chang Huang , Chue-San Yoo , Wen-Chan Lin
发明人： Cheng-Yeh Shih , Yuan-Chang Huang , Chue-San Yoo , Wen-Chan Lin
IPC分类号： H01L21/02 , H01L21/8242
CPC分类号： H01L27/1085 , H01L27/10852 , H01L28/60
摘要： A method for making improved capacitor bottom electrodes (capacitor nodes) having longer refresh cycle times and increased capacitance for DRAM cells has been achieved. The method involves using a polysilicon high-temperature film (HTF) instead of the conventional doped polysilicon to form the node capacitors. After forming the DRAM pass transistors (FETs) and depositing an insulating layer, node contact openings are etched in the insulator to the drain of the FET. The capacitor bottom electrodes are formed by depositing a polysilicon HTF at a temperature of at least 650.degree. C. using a reactant gas mixture of H.sub.2 /SiH.sub.4 /PH.sub.3, which results in a longer refresh cycle time and increased capacitance. This results in a significantly improved final die yield. After forming an interelectrode dielectric layer on the bottom electrodes, another doped polysilicon layer is deposited to form the top electrodes to complete the DRAM cells.
摘要翻译：已经实现了具有更长的刷新周期时间和DRAM单元的增加的电容的改进的电容器底部电极（电容器节点）的方法。该方法包括使用多晶硅高温膜（HTF）代替常规的掺杂多晶硅以形成节点电容器。在形成DRAM通过晶体管（FET）和沉积绝缘层之后，将节点接触开口在绝缘体中蚀刻到FET的漏极。通过使用H 2 / SiH 4 / PH 3的反应气体混合物在至少650℃的温度下沉积多晶硅HTF来形成电容器底部电极，这导致更长的刷新周期时间和增加的电容。这导致最终模具产量显着提高。在底部电极上形成电极间电介质层之后，沉积另一个掺杂多晶硅层以形成顶部电极以完成DRAM单元。

IPRDB

热门服务

关于我们

友情链接

联系方式