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1. 发明授权

US07084955B2 Lithographic apparatus 有权
公开(公告)号：US07084955B2
公开(公告)日：2006-08-01
申请号：US10803104
申请日：2004-03-18
申请人： Cheng-Qun Gui , Henricus Van Buel , Maurits Van Der Schaar , Arie Den Boef
发明人： Cheng-Qun Gui , Henricus Van Buel , Maurits Van Der Schaar , Arie Den Boef
IPC分类号： G03B27/54 , G03B27/42 , G03B27/32 , G01B11/00
CPC分类号： G03F7/70691 , G03F7/70216 , G03F9/7084
摘要： A lithographic projection apparatus is provided with an optical system built into the wafer table for producing an image of a wafer mark that is provided on the back side of the wafer. The image is located at the plane of the front side of the wafer and can be viewed by an alignment system from the front side of the wafer. Simultaneous alignment between marks on the back and front of the wafer and a mask can be performed using a pre-existing alignment system.

2. 发明申请

US20060103033A1 Marker structure and method for controlling alignment of layers of a multi-layered substrate 有权
公开(公告)号：US20060103033A1
公开(公告)日：2006-05-18
申请号：US10986179
申请日：2004-11-12
申请人： Richard Johannes Van Haren , Arie Den Boef , Jacobus Burghoorn , Maurits Van Der Schaar , Bartolomeus Rijpers
发明人： Richard Johannes Van Haren , Arie Den Boef , Jacobus Burghoorn , Maurits Van Der Schaar , Bartolomeus Rijpers
IPC分类号： H01L23/544
CPC分类号： H01L23/544 , G03F7/70633 , G03F9/7049 , G03F9/7065 , G03F9/7076 , G03F9/7092 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： The invention includes a lithographic system having a first source for generating radiation with a first wavelength and an alignment system with a second source for generating radiation with a second wavelength. The second wavelength is larger than the first wavelength. A marker structure is provided having a first layer and a second layer. The second layer is present either directly or indirectly on top of said first layer. The first layer has a first periodic structure and the second layer has a second periodic structure. At least one of the periodic structures has a plurality of features in at least one direction with a dimension smaller than 400 nm. Additionally, a combination of the first and second periodic structure forms a diffractive structure arranged to be illuminated by radiation with the second wavelength.

3. 发明申请

US20070003840A1 Focus determination method, device manufacturing method, and mask 有权
标题翻译：聚焦确定方法，设备制造方法和面罩
公开(公告)号：US20070003840A1
公开(公告)日：2007-01-04
申请号：US11170747
申请日：2005-06-30
申请人： Maurits Van Der Schaar , Arie Den Boef , Mircea Dusa , Antoine Marie Kiers
发明人： Maurits Van Der Schaar , Arie Den Boef , Mircea Dusa , Antoine Marie Kiers
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F7/70641 , G03F7/70683
摘要： One or more focus settings for use in a device manufacturing method is determined by printing a plurality of target markers at different focus settings and using a scatterometer, e.g. off-line, to measure a property of the target markers that is indicative of focus.
摘要翻译：通过在不同焦点设置下打印多个目标标记并使用散射仪，例如，用于在设备制造方法中使用的一个或多个焦点设置来确定。离线，以测量指示焦点的目标标记的属性。

4. 发明申请

US20070222960A1 Lithographic apparatus and device manufacturing method with reduced scribe lane usage for substrate measurement 有权
标题翻译：平版印刷设备和器件制造方法，具有减少基片测量的划线通道用途
公开(公告)号：US20070222960A1
公开(公告)日：2007-09-27
申请号：US11384836
申请日：2006-03-21
申请人： Maurits Van Der Schaar , Arie Den Boef , Richard Johannes Van Haren , Everhardus Mos
发明人： Maurits Van Der Schaar , Arie Den Boef , Richard Johannes Van Haren , Everhardus Mos
IPC分类号： G03B27/54
CPC分类号： G03F7/70433 , G03F7/70625 , G03F7/70633 , G03F9/7049 , G03F9/7076 , G03F9/708 , G03F9/7084
摘要： In a device manufacturing method and lithographic apparatus wherein a pattern is transferred from a patterning device onto a substrate, a measurement target is provided on the substrate in a process enabling execution of a substrate measurement using radiation of a first wavelength. Subsequently the measurement target is transformed in a grid of conducting material, the grid having grid openings which are smaller than the first wavelength. The space in the scribe lane where the measurement target was, is now shielded and may be used again in further layers or processing steps of the substrate.
摘要翻译：在其中将图案从图案形成装置转印到基板上的装置制造方法和光刻设备中，在能够使用第一波长的辐射执行基板测量的处理中，在基板上提供测量目标。随后，将测量目标变换为导电材料的栅格，栅格具有比第一波长小的栅格开口。测量目标的划线中的空间现在被屏蔽，并且可以再次用于基板的更多层或处理步骤。

5. 发明申请

US20060139592A1 Latent overlay metrology 审中-公开
标题翻译：潜在重叠度量
公开(公告)号：US20060139592A1
公开(公告)日：2006-06-29
申请号：US11269881
申请日：2005-11-09
申请人： Arie Den Boef , Jacobus Burghoorn , Mircea Dusa , Antoine Kiers , Maurits Van Der Schaar
发明人： Arie Den Boef , Jacobus Burghoorn , Mircea Dusa , Antoine Kiers , Maurits Van Der Schaar
IPC分类号： G03B27/42
CPC分类号： G03F9/708 , G03F7/70633 , G03F7/70675 , G03F7/70991 , G03F9/7084
摘要： An apparatus and method for improved latent overlay metrology is disclosed. In an embodiment, a scatterometer and an overexposed overlay target are used to obtain more robust overlay measurement. Overlay metrology and exposure may be done in parallel.
摘要翻译：公开了一种用于改进潜重叠计量的装置和方法。在一个实施例中，使用散射仪和曝光过度的覆盖目标来获得更坚固的覆盖测量。叠加计量和曝光可以并行进行。

6. 发明授权

US07064807B2 Lithographic apparatus 有权
标题翻译：平版印刷设备
公开(公告)号：US07064807B2
公开(公告)日：2006-06-20
申请号：US10840360
申请日：2004-05-07
申请人： Cheng-Qun Gui , Henricus Wilhelmus Maria Van Buel , Maurits Van Der Schaar , Arie Jeffrey Den Boef
发明人： Cheng-Qun Gui , Henricus Wilhelmus Maria Van Buel , Maurits Van Der Schaar , Arie Jeffrey Den Boef
IPC分类号： G03B27/54 , G03B27/42 , G03B27/32 , G01B11/00
CPC分类号： G03F7/70691 , G03F7/70216 , G03F9/7084
摘要： A lithographic projection apparatus is provided with an optical system built into the wafer table for producing an image of a wafer mark that is provided on the back side of the wafer. The image is located at the plane of the front side of the wafer and can be viewed by an alignment system from the front side of the wafer. Simultaneous alignment between marks on the back and front of the wafer and a mask can be performed using a pre-existing alignment system.
摘要翻译：光刻投影装置设置有内置在晶片台中的光学系统，用于产生设置在晶片背面的晶片标记的图像。图像位于晶片正面的平面上，并且可以通过对准系统从晶片的正面观察。可以使用预先存在的对准系统来执行晶片背面和前面的标记与掩模之间的同时对准。

7. 发明授权

US06768539B2 Lithographic apparatus 有权
标题翻译：平版印刷设备
公开(公告)号：US06768539B2
公开(公告)日：2004-07-27
申请号：US10043271
申请日：2002-01-14
申请人： Cheng-Qun Gui , Henricus Wilheimus Maria Van Buel , Maurits Van Der Schaar , Arie Jeffrey Den Boef
发明人： Cheng-Qun Gui , Henricus Wilheimus Maria Van Buel , Maurits Van Der Schaar , Arie Jeffrey Den Boef
IPC分类号： G03B2742
CPC分类号： G03F7/70691 , G03F7/70216 , G03F9/7084
摘要： A lithographic projection apparatus is provided with an optical system built into the wafer table for producing an image of a wafer mark that is provided on the back side of the wafer. The image is located at the plane of the front side of the wafer and can be viewed by an alignment system from the front side of the wafer. Simultaneous alignment between marks on the back and front of the wafer and a mask can be performed using a pre-existing alignment system
摘要翻译：光刻投影装置设置有内置在晶片台中的光学系统，用于产生设置在晶片背面的晶片标记的图像。图像位于晶片正面的平面上，并且可以通过对准系统从晶片的正面观察。可以使用预先存在的对准系统来执行晶片背面和前面的标记与掩模之间的同时对准

8. 发明授权

US08248579B2 Lithographic apparatus, device manufacturing method and device for correcting overlay errors between overlapping patterns 有权
标题翻译：平版印刷设备，装置制造方法和用于校正重叠图案之间的重叠误差的装置
公开(公告)号：US08248579B2
公开(公告)日：2012-08-21
申请号：US11948801
申请日：2007-11-30
申请人： Everhardus Cornelis Mos , Maurits Van Der Schaar , Hubertus Johannes Gertrudus Simons
发明人： Everhardus Cornelis Mos , Maurits Van Der Schaar , Hubertus Johannes Gertrudus Simons
IPC分类号： G03B27/68
CPC分类号： G03F7/70725 , G03F7/70258 , G03F7/70358 , G03F7/70458 , G03F7/70525 , G03F7/70633 , G03F7/70783
摘要： A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region.
摘要翻译：光刻设备包括配置成调节辐射束的照明系统，图案形成装置的支撑件，用于衬底的衬底台，投影系统和控制系统。图案形成装置能够在其横截面中赋予辐射束图案以形成图案化的辐射束。投影系统被配置为沿着扫描路径将图案化的辐射束作为图像投影到基板的目标部分上。扫描路径由光刻设备的曝光场的扫描方向上的轨迹限定。控制系统耦合到支撑件，基板台和投影系统，用于分别控制支撑件，基板台和投影系统的作用。控制系统被配置为通过在该区域中的图像的时间调整来校正沿着扫描路径的区域中的图像的局部失真。

9. 发明申请

US20120044470A1 Substrate for Use in Metrology, Metrology Method and Device Manufacturing Method 审中-公开
标题翻译：用于计量，计量方法和设备制造方法的基板
公开(公告)号：US20120044470A1
公开(公告)日：2012-02-23
申请号：US13190998
申请日：2011-07-26
申请人： Hendrik Jan Hidde SMILDE , Maurits Van Der Schaar , Kaustuve Bhattacharyya
发明人： Hendrik Jan Hidde SMILDE , Maurits Van Der Schaar , Kaustuve Bhattacharyya
IPC分类号： G03B27/42 , G01N21/00
CPC分类号： G03F7/70683 , G03F1/44 , G03F7/70633
摘要： A pattern from a patterning device is applied to a substrate. The applied pattern includes device functional areas and metrology target areas. Each metrology target area comprises a plurality of individual grating portions, which are used for diffraction based overlay measurements or other diffraction based measurements. The gratings are of the small target type, which is small than an illumination spot used in the metrology. Each grating has an aspect ratio substantially greater than 1, meaning that a length in a direction perpendicular to the grating lines which is substantially greater than a width of the grating. Total target area can be reduced without loss of performance in the diffraction based metrology. A composite target can comprise a plurality of individual grating portions of different overlay biases. Using integer aspect ratios such as 2:1 or 4:1, grating portions of different directions can be packed efficiently into rectangular composite target areas.
摘要翻译：将来自图案形成装置的图案应用于基板。应用模式包括设备功能区域和计量目标区域。每个测量目标区域包括多个单独的光栅部分，其用于基于衍射的覆盖测量或其他基于衍射的测量。光栅是小目标类型，小于计量中使用的照明点。每个光栅具有基本上大于1的长宽比，这意味着在垂直于光栅线的方向上的长度大致大于光栅的宽度。可以减少总目标面积，而不会在基于衍射的计量学中失去性能。复合目标可以包括不同覆盖偏移的多个单独光栅部分。使用诸如2：1或4：1的整数长宽比，可以将不同方向的光栅部分有效地包装到矩形复合目标区域中。

10. 发明申请

US20120038929A1 Method and Apparatus for Angular-Resolved Spectroscopic Lithography Characterization 有权
标题翻译：用于角度分辨光谱光刻特征的方法和装置
公开(公告)号：US20120038929A1
公开(公告)日：2012-02-16
申请号：US13249566
申请日：2011-09-30
申请人： Arie Jeffrey Maria Den Boef , Arno Jan Bleeker , Youri Johannes Laurentius Maria Van Dommelen , Mircea Dusa , Antoine Gaston Marie Kiers , Paul Frank Luehrmann , Henricus Petrus Maria Pellemans , Maurits Van Der Schaar , Cedric Desire Grouwstra , Markus Gerardus Martinus Van Kraaij
发明人： Arie Jeffrey Maria Den Boef , Arno Jan Bleeker , Youri Johannes Laurentius Maria Van Dommelen , Mircea Dusa , Antoine Gaston Marie Kiers , Paul Frank Luehrmann , Henricus Petrus Maria Pellemans , Maurits Van Der Schaar , Cedric Desire Grouwstra , Markus Gerardus Martinus Van Kraaij
IPC分类号： G01J3/45
CPC分类号： G01N21/8806 , G03F7/70341 , G03F7/70633 , G03F7/7065 , G03F9/7034
摘要： An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
摘要翻译：通过在高数值孔径透镜的光瞳平面中测量作为辐射的结果的角度分辨光谱从衬底反射来确定衬底的性质的装置和方法。该属性可以是角度和波长相关的，并且可以包括TM和TE偏振辐射的强度及其相对相位差。

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