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1. 发明申请

US20130082305A1 STRUCTURE OF A HIGH ELECTRON MOBILITY TRANSISTOR AND A FABRICATION METHOD THEREOF 有权
标题翻译：高电子晶体管的结构及其制造方法
公开(公告)号：US20130082305A1
公开(公告)日：2013-04-04
申请号：US13339055
申请日：2011-12-28
申请人： Cheng-Guan YUAN , Shih-Ming Joseph Liu
发明人： Cheng-Guan YUAN , Shih-Ming Joseph Liu
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/42316 , H01L29/66462 , H01L29/7783
摘要： An improved structure of the high electron mobility transistor (HEMT) and a fabrication method thereof are disclosed. The improved HEMT structure comprises a substrate, a channel layer, a spacing layer, a carrier supply layer, a Schottky layer, a first etch stop layer, a first n type doped layer formed by AlxGa1-xAs, and a second n type doped layer. The fabrication method comprises steps of: etching a gate, a drain, and a source recess by using a multiple selective etching process. Below the gate, the drain, and the source recess is the Schottky layer. A gate electrode is deposited in the gate recess to form Schottky contact. A drain electrode and a source electrode are deposited to form ohmic contacts in the drain recess and the source recess respectively, and on the second n type doped layer surrounding the drain recess and the source recess respectively.
摘要翻译：公开了高电子迁移率晶体管（HEMT）的改进结构及其制造方法。改进的HEMT结构包括衬底，沟道层，间隔层，载流子供应层，肖特基层，第一蚀刻停止层，由Al x Ga 1-x As形成的第一n型掺杂层和第二n型掺杂层。该制造方法包括以下步骤：通过使用多重选择性蚀刻工艺蚀刻栅极，漏极和源极凹陷。在栅极下方，漏极和源极凹槽是肖特基层。栅电极沉积在栅极凹槽中以形成肖特基接触。沉积漏电极和源极以分别在漏极凹部和源极凹槽中以及在漏极凹部和源极凹槽周围的第二n型掺杂层上形成欧姆接触。

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